Neutron transmutation doping in semiconductors: proceedings of the Second International Conference on Transmutation Doping in Semiconductors held at the University of Missouri, Columbia, Missouri, April 23 - 26, 1978
Gespeichert in:
| Weitere Verfasser: | |
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| Format: | Elektronisch Tagungsbericht E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Springer US
1979
|
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second conference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly international in scope |
| Beschreibung: | 1 Online-Ressource (X, 372 p) |
| ISBN: | 9781468482492 9781468482515 |
| DOI: | 10.1007/978-1-4684-8249-2 |
Internformat
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV042412172 | ||
| 003 | DE-604 | ||
| 005 | 20230103 | ||
| 006 | a |||| 10||| | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 150316s1979 |||| o||u| ||||||eng d | ||
| 020 | |a 9781468482492 |c Online |9 978-1-4684-8249-2 | ||
| 020 | |a 9781468482515 |c Print |9 978-1-4684-8251-5 | ||
| 024 | 7 | |a 10.1007/978-1-4684-8249-2 |2 doi | |
| 035 | |a (OCoLC)863977974 | ||
| 035 | |a (DE-599)BVBBV042412172 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-83 | ||
| 082 | 0 | |a 537.622 |2 23 | |
| 084 | |a UP 3250 |0 (DE-625)146380: |2 rvk | ||
| 084 | |a PHY 000 |2 stub | ||
| 100 | 1 | |a Meese, Jon M. |0 (DE-588)1158799373 |4 edt | |
| 245 | 1 | 0 | |a Neutron transmutation doping in semiconductors |b proceedings of the Second International Conference on Transmutation Doping in Semiconductors held at the University of Missouri, Columbia, Missouri, April 23 - 26, 1978 |c edited by Jon M. Meese |
| 264 | 1 | |a Boston, MA |b Springer US |c 1979 | |
| 300 | |a 1 Online-Ressource (X, 372 p) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 500 | |a This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second conference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly international in scope | ||
| 650 | 4 | |a Physics | |
| 650 | 4 | |a Computer engineering | |
| 650 | 4 | |a Semiconductors | |
| 650 | 4 | |a Electrical Engineering | |
| 650 | 0 | 7 | |a Neutronenstrahlung |0 (DE-588)4221352-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Neutronenbestrahlung |0 (DE-588)4258816-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |2 gnd |9 rswk-swf |
| 655 | 7 | |8 1\p |0 (DE-588)1071861417 |a Konferenzschrift |y 1978 |z Columbia, Missouri |2 gnd-content | |
| 689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | 1 | |a Neutronenstrahlung |0 (DE-588)4221352-6 |D s |
| 689 | 0 | |8 2\p |5 DE-604 | |
| 689 | 1 | 0 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |D s |
| 689 | 1 | |8 3\p |5 DE-604 | |
| 689 | 2 | 0 | |a Neutronenbestrahlung |0 (DE-588)4258816-9 |D s |
| 689 | 2 | |8 4\p |5 DE-604 | |
| 689 | 3 | 0 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 3 | |8 5\p |5 DE-604 | |
| 711 | 2 | |a International Conference on Transmutation Doping in Semiconductors |n 2 |d 1978 |c Columbia, Mo. |j Sonstige |0 (DE-588)807836-1 |4 oth | |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |z 0-306-40155-X |
| 856 | 4 | 0 | |u https://doi.org/10.1007/978-1-4684-8249-2 |x Verlag |3 Volltext |
| 912 | |a ZDB-2-PHA |a ZDB-2-BAE | ||
| 940 | 1 | |q ZDB-2-PHA_Archive | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-027847665 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 2\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 3\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 4\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 5\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
Datensatz im Suchindex
| _version_ | 1804153074591203328 |
|---|---|
| any_adam_object | |
| author2 | Meese, Jon M. |
| author2_role | edt |
| author2_variant | j m m jm jmm |
| author_GND | (DE-588)1158799373 |
| author_facet | Meese, Jon M. |
| building | Verbundindex |
| bvnumber | BV042412172 |
| classification_rvk | UP 3250 |
| classification_tum | PHY 000 |
| collection | ZDB-2-PHA ZDB-2-BAE |
| ctrlnum | (OCoLC)863977974 (DE-599)BVBBV042412172 |
| dewey-full | 537.622 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.622 |
| dewey-search | 537.622 |
| dewey-sort | 3537.622 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| doi_str_mv | 10.1007/978-1-4684-8249-2 |
| format | Electronic Conference Proceeding eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>04068nmm a2200685zc 4500</leader><controlfield tag="001">BV042412172</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20230103 </controlfield><controlfield tag="006">a |||| 10||| </controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">150316s1979 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781468482492</subfield><subfield code="c">Online</subfield><subfield code="9">978-1-4684-8249-2</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781468482515</subfield><subfield code="c">Print</subfield><subfield code="9">978-1-4684-8251-5</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/978-1-4684-8249-2</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)863977974</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV042412172</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">537.622</subfield><subfield code="2">23</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3250</subfield><subfield code="0">(DE-625)146380:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 000</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Meese, Jon M.</subfield><subfield code="0">(DE-588)1158799373</subfield><subfield code="4">edt</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Neutron transmutation doping in semiconductors</subfield><subfield code="b">proceedings of the Second International Conference on Transmutation Doping in Semiconductors held at the University of Missouri, Columbia, Missouri, April 23 - 26, 1978</subfield><subfield code="c">edited by Jon M. Meese</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Boston, MA</subfield><subfield code="b">Springer US</subfield><subfield code="c">1979</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (X, 372 p)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second conference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly international in scope</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Physics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Computer engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrical Engineering</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Neutronenstrahlung</subfield><subfield code="0">(DE-588)4221352-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Neutronenbestrahlung</subfield><subfield code="0">(DE-588)4258816-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="8">1\p</subfield><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1978</subfield><subfield code="z">Columbia, Missouri</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Neutronenstrahlung</subfield><subfield code="0">(DE-588)4221352-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">2\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="8">3\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Neutronenbestrahlung</subfield><subfield code="0">(DE-588)4258816-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="8">4\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="3" ind2="0"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="3" ind2=" "><subfield code="8">5\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="711" ind1="2" ind2=" "><subfield code="a">International Conference on Transmutation Doping in Semiconductors</subfield><subfield code="n">2</subfield><subfield code="d">1978</subfield><subfield code="c">Columbia, Mo.</subfield><subfield code="j">Sonstige</subfield><subfield code="0">(DE-588)807836-1</subfield><subfield code="4">oth</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe</subfield><subfield code="z">0-306-40155-X</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/978-1-4684-8249-2</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-PHA</subfield><subfield code="a">ZDB-2-BAE</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">ZDB-2-PHA_Archive</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-027847665</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">3\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">4\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">5\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
| genre | 1\p (DE-588)1071861417 Konferenzschrift 1978 Columbia, Missouri gnd-content |
| genre_facet | Konferenzschrift 1978 Columbia, Missouri |
| id | DE-604.BV042412172 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T01:20:50Z |
| institution | BVB |
| institution_GND | (DE-588)807836-1 |
| isbn | 9781468482492 9781468482515 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027847665 |
| oclc_num | 863977974 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-83 |
| physical | 1 Online-Ressource (X, 372 p) |
| psigel | ZDB-2-PHA ZDB-2-BAE ZDB-2-PHA_Archive |
| publishDate | 1979 |
| publishDateSearch | 1979 |
| publishDateSort | 1979 |
| publisher | Springer US |
| record_format | marc |
| spelling | Meese, Jon M. (DE-588)1158799373 edt Neutron transmutation doping in semiconductors proceedings of the Second International Conference on Transmutation Doping in Semiconductors held at the University of Missouri, Columbia, Missouri, April 23 - 26, 1978 edited by Jon M. Meese Boston, MA Springer US 1979 1 Online-Ressource (X, 372 p) txt rdacontent c rdamedia cr rdacarrier This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second conference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly international in scope Physics Computer engineering Semiconductors Electrical Engineering Neutronenstrahlung (DE-588)4221352-6 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Neutronenbestrahlung (DE-588)4258816-9 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf 1\p (DE-588)1071861417 Konferenzschrift 1978 Columbia, Missouri gnd-content Halbleiter (DE-588)4022993-2 s Neutronenstrahlung (DE-588)4221352-6 s 2\p DE-604 Halbleitertechnologie (DE-588)4158814-9 s 3\p DE-604 Neutronenbestrahlung (DE-588)4258816-9 s 4\p DE-604 Silicium (DE-588)4077445-4 s 5\p DE-604 International Conference on Transmutation Doping in Semiconductors 2 1978 Columbia, Mo. Sonstige (DE-588)807836-1 oth Erscheint auch als Druck-Ausgabe 0-306-40155-X https://doi.org/10.1007/978-1-4684-8249-2 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 4\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 5\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Neutron transmutation doping in semiconductors proceedings of the Second International Conference on Transmutation Doping in Semiconductors held at the University of Missouri, Columbia, Missouri, April 23 - 26, 1978 Physics Computer engineering Semiconductors Electrical Engineering Neutronenstrahlung (DE-588)4221352-6 gnd Silicium (DE-588)4077445-4 gnd Neutronenbestrahlung (DE-588)4258816-9 gnd Halbleiter (DE-588)4022993-2 gnd Halbleitertechnologie (DE-588)4158814-9 gnd |
| subject_GND | (DE-588)4221352-6 (DE-588)4077445-4 (DE-588)4258816-9 (DE-588)4022993-2 (DE-588)4158814-9 (DE-588)1071861417 |
| title | Neutron transmutation doping in semiconductors proceedings of the Second International Conference on Transmutation Doping in Semiconductors held at the University of Missouri, Columbia, Missouri, April 23 - 26, 1978 |
| title_auth | Neutron transmutation doping in semiconductors proceedings of the Second International Conference on Transmutation Doping in Semiconductors held at the University of Missouri, Columbia, Missouri, April 23 - 26, 1978 |
| title_exact_search | Neutron transmutation doping in semiconductors proceedings of the Second International Conference on Transmutation Doping in Semiconductors held at the University of Missouri, Columbia, Missouri, April 23 - 26, 1978 |
| title_full | Neutron transmutation doping in semiconductors proceedings of the Second International Conference on Transmutation Doping in Semiconductors held at the University of Missouri, Columbia, Missouri, April 23 - 26, 1978 edited by Jon M. Meese |
| title_fullStr | Neutron transmutation doping in semiconductors proceedings of the Second International Conference on Transmutation Doping in Semiconductors held at the University of Missouri, Columbia, Missouri, April 23 - 26, 1978 edited by Jon M. Meese |
| title_full_unstemmed | Neutron transmutation doping in semiconductors proceedings of the Second International Conference on Transmutation Doping in Semiconductors held at the University of Missouri, Columbia, Missouri, April 23 - 26, 1978 edited by Jon M. Meese |
| title_short | Neutron transmutation doping in semiconductors |
| title_sort | neutron transmutation doping in semiconductors proceedings of the second international conference on transmutation doping in semiconductors held at the university of missouri columbia missouri april 23 26 1978 |
| title_sub | proceedings of the Second International Conference on Transmutation Doping in Semiconductors held at the University of Missouri, Columbia, Missouri, April 23 - 26, 1978 |
| topic | Physics Computer engineering Semiconductors Electrical Engineering Neutronenstrahlung (DE-588)4221352-6 gnd Silicium (DE-588)4077445-4 gnd Neutronenbestrahlung (DE-588)4258816-9 gnd Halbleiter (DE-588)4022993-2 gnd Halbleitertechnologie (DE-588)4158814-9 gnd |
| topic_facet | Physics Computer engineering Semiconductors Electrical Engineering Neutronenstrahlung Silicium Neutronenbestrahlung Halbleiter Halbleitertechnologie Konferenzschrift 1978 Columbia, Missouri |
| url | https://doi.org/10.1007/978-1-4684-8249-2 |
| work_keys_str_mv | AT meesejonm neutrontransmutationdopinginsemiconductorsproceedingsofthesecondinternationalconferenceontransmutationdopinginsemiconductorsheldattheuniversityofmissouricolumbiamissouriapril23261978 AT internationalconferenceontransmutationdopinginsemiconductorscolumbiamo neutrontransmutationdopinginsemiconductorsproceedingsofthesecondinternationalconferenceontransmutationdopinginsemiconductorsheldattheuniversityofmissouricolumbiamissouriapril23261978 |