Point and Extended Defects in Semiconductors:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Springer US
1989
|
| Schriftenreihe: | NATO ASI Series, Series B: Physics
202 |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together |
| Beschreibung: | 1 Online-Ressource (X, 287 p) |
| ISBN: | 9781468457094 9781468457117 |
| ISSN: | 0258-1221 |
| DOI: | 10.1007/978-1-4684-5709-4 |
Internformat
MARC
| LEADER | 00000nmm a2200000zcb4500 | ||
|---|---|---|---|
| 001 | BV042412082 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 150316s1989 |||| o||u| ||||||eng d | ||
| 020 | |a 9781468457094 |c Online |9 978-1-4684-5709-4 | ||
| 020 | |a 9781468457117 |c Print |9 978-1-4684-5711-7 | ||
| 024 | 7 | |a 10.1007/978-1-4684-5709-4 |2 doi | |
| 035 | |a (OCoLC)864067661 | ||
| 035 | |a (DE-599)BVBBV042412082 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-83 | ||
| 082 | 0 | |a 530.41 |2 23 | |
| 084 | |a PHY 000 |2 stub | ||
| 100 | 1 | |a Benedek, G. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Point and Extended Defects in Semiconductors |c edited by G. Benedek, A. Cavallini, W. Schröter |
| 264 | 1 | |a Boston, MA |b Springer US |c 1989 | |
| 300 | |a 1 Online-Ressource (X, 287 p) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a NATO ASI Series, Series B: Physics |v 202 |x 0258-1221 | |
| 500 | |a The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together | ||
| 650 | 4 | |a Physics | |
| 650 | 4 | |a Solid State Physics | |
| 650 | 4 | |a Spectroscopy and Microscopy | |
| 700 | 1 | |a Cavallini, A. |e Sonstige |4 oth | |
| 700 | 1 | |a Schröter, W. |e Sonstige |4 oth | |
| 856 | 4 | 0 | |u https://doi.org/10.1007/978-1-4684-5709-4 |x Verlag |3 Volltext |
| 912 | |a ZDB-2-PHA |a ZDB-2-BAE | ||
| 940 | 1 | |q ZDB-2-PHA_Archive | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-027847575 | ||
Datensatz im Suchindex
| _version_ | 1804153074333253632 |
|---|---|
| any_adam_object | |
| author | Benedek, G. |
| author_facet | Benedek, G. |
| author_role | aut |
| author_sort | Benedek, G. |
| author_variant | g b gb |
| building | Verbundindex |
| bvnumber | BV042412082 |
| classification_tum | PHY 000 |
| collection | ZDB-2-PHA ZDB-2-BAE |
| ctrlnum | (OCoLC)864067661 (DE-599)BVBBV042412082 |
| dewey-full | 530.41 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 530 - Physics |
| dewey-raw | 530.41 |
| dewey-search | 530.41 |
| dewey-sort | 3530.41 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| doi_str_mv | 10.1007/978-1-4684-5709-4 |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02818nmm a2200421zcb4500</leader><controlfield tag="001">BV042412082</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">150316s1989 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781468457094</subfield><subfield code="c">Online</subfield><subfield code="9">978-1-4684-5709-4</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781468457117</subfield><subfield code="c">Print</subfield><subfield code="9">978-1-4684-5711-7</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/978-1-4684-5709-4</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)864067661</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV042412082</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">530.41</subfield><subfield code="2">23</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 000</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Benedek, G.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Point and Extended Defects in Semiconductors</subfield><subfield code="c">edited by G. Benedek, A. Cavallini, W. Schröter</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Boston, MA</subfield><subfield code="b">Springer US</subfield><subfield code="c">1989</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (X, 287 p)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">NATO ASI Series, Series B: Physics</subfield><subfield code="v">202</subfield><subfield code="x">0258-1221</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Physics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Solid State Physics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Spectroscopy and Microscopy</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Cavallini, A.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Schröter, W.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/978-1-4684-5709-4</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-PHA</subfield><subfield code="a">ZDB-2-BAE</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">ZDB-2-PHA_Archive</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-027847575</subfield></datafield></record></collection> |
| id | DE-604.BV042412082 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T01:20:49Z |
| institution | BVB |
| isbn | 9781468457094 9781468457117 |
| issn | 0258-1221 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027847575 |
| oclc_num | 864067661 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-83 |
| physical | 1 Online-Ressource (X, 287 p) |
| psigel | ZDB-2-PHA ZDB-2-BAE ZDB-2-PHA_Archive |
| publishDate | 1989 |
| publishDateSearch | 1989 |
| publishDateSort | 1989 |
| publisher | Springer US |
| record_format | marc |
| series2 | NATO ASI Series, Series B: Physics |
| spelling | Benedek, G. Verfasser aut Point and Extended Defects in Semiconductors edited by G. Benedek, A. Cavallini, W. Schröter Boston, MA Springer US 1989 1 Online-Ressource (X, 287 p) txt rdacontent c rdamedia cr rdacarrier NATO ASI Series, Series B: Physics 202 0258-1221 The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together Physics Solid State Physics Spectroscopy and Microscopy Cavallini, A. Sonstige oth Schröter, W. Sonstige oth https://doi.org/10.1007/978-1-4684-5709-4 Verlag Volltext |
| spellingShingle | Benedek, G. Point and Extended Defects in Semiconductors Physics Solid State Physics Spectroscopy and Microscopy |
| title | Point and Extended Defects in Semiconductors |
| title_auth | Point and Extended Defects in Semiconductors |
| title_exact_search | Point and Extended Defects in Semiconductors |
| title_full | Point and Extended Defects in Semiconductors edited by G. Benedek, A. Cavallini, W. Schröter |
| title_fullStr | Point and Extended Defects in Semiconductors edited by G. Benedek, A. Cavallini, W. Schröter |
| title_full_unstemmed | Point and Extended Defects in Semiconductors edited by G. Benedek, A. Cavallini, W. Schröter |
| title_short | Point and Extended Defects in Semiconductors |
| title_sort | point and extended defects in semiconductors |
| topic | Physics Solid State Physics Spectroscopy and Microscopy |
| topic_facet | Physics Solid State Physics Spectroscopy and Microscopy |
| url | https://doi.org/10.1007/978-1-4684-5709-4 |
| work_keys_str_mv | AT benedekg pointandextendeddefectsinsemiconductors AT cavallinia pointandextendeddefectsinsemiconductors AT schroterw pointandextendeddefectsinsemiconductors |