Ion Implantation in Semiconductors: Science and Technology
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Springer US
1975
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| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook |
| Beschreibung: | 1 Online-Ressource (XV, 742 p) |
| ISBN: | 9781468421514 9781468421538 |
| DOI: | 10.1007/978-1-4684-2151-4 |
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| 500 | |a The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook | ||
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| discipline | Physik |
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| spelling | Namba, Susumu Verfasser aut Ion Implantation in Semiconductors Science and Technology edited by Susumu Namba Boston, MA Springer US 1975 1 Online-Ressource (XV, 742 p) txt rdacontent c rdamedia cr rdacarrier The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook Physics Solid State Physics Spectroscopy and Microscopy Ionenimplantation (DE-588)4027606-5 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf 1\p (DE-588)1071861417 Konferenzschrift gnd-content Halbleiter (DE-588)4022993-2 s Ionenimplantation (DE-588)4027606-5 s 2\p DE-604 https://doi.org/10.1007/978-1-4684-2151-4 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Namba, Susumu Ion Implantation in Semiconductors Science and Technology Physics Solid State Physics Spectroscopy and Microscopy Ionenimplantation (DE-588)4027606-5 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4027606-5 (DE-588)4022993-2 (DE-588)1071861417 |
| title | Ion Implantation in Semiconductors Science and Technology |
| title_auth | Ion Implantation in Semiconductors Science and Technology |
| title_exact_search | Ion Implantation in Semiconductors Science and Technology |
| title_full | Ion Implantation in Semiconductors Science and Technology edited by Susumu Namba |
| title_fullStr | Ion Implantation in Semiconductors Science and Technology edited by Susumu Namba |
| title_full_unstemmed | Ion Implantation in Semiconductors Science and Technology edited by Susumu Namba |
| title_short | Ion Implantation in Semiconductors |
| title_sort | ion implantation in semiconductors science and technology |
| title_sub | Science and Technology |
| topic | Physics Solid State Physics Spectroscopy and Microscopy Ionenimplantation (DE-588)4027606-5 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Physics Solid State Physics Spectroscopy and Microscopy Ionenimplantation Halbleiter Konferenzschrift |
| url | https://doi.org/10.1007/978-1-4684-2151-4 |
| work_keys_str_mv | AT nambasusumu ionimplantationinsemiconductorsscienceandtechnology |