Point defects in solids: semiconductors and molecular crystals ; volume 2
Saved in:
| Main Author: | |
|---|---|
| Other Authors: | |
| Format: | Electronic eBook |
| Language: | English |
| Published: |
New York ; London
Plenum Press
1975
|
| Subjects: | |
| Online Access: | Volltext |
| Item Description: | Volume 1 of Point Defects in Solids has as its major emphasis defects in ionic solids. Volume 2 now extends this emphasis to semiconductors. The first four chapters treat in some detail the creation, kinetic behavior, inter actions, and physical properties of both simple and composite defects in a variety of semiconducting systems. Also included, as in Vol. 1, are chapters on special topics, namely phonon-defect interactions and defects in organic crystals. Defect behavior in semiconductors has been a subject of considerable interest since the discovery some twenty-five years ago that fast neutron irradiation profoundly affected the electrical characteristics of germanium and silicon. Present-day interest has been stimulated by such semiconductor applications as solar cell power plants for space stations and satellites and semiconductor particle and y-ray detectors, since in both radiation damage can cause serious deterioration. Of even greater practical concern is the need to understand particle damage in order to capitalize upon the develop ing technique of ion implantation as a means of device fabrication. Although the periodic international conferences on radiation effects in semiconductors have served the valuable function of summarizing the extensive work being done in this field, these proceedings are much too detailed and lack the background discussion needed to make them useful to the novice |
| Physical Description: | 1 Online-Ressource (XVI, 480 Seiten) Illustrationen |
| ISBN: | 9781468409048 |
| DOI: | 10.1007/978-1-4684-0904-8 |
Staff View
MARC
| LEADER | 00000nam a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV042411855 | ||
| 003 | DE-604 | ||
| 005 | 20250618 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 150316s1975 xx a||| o|||| 00||| eng d | ||
| 020 | |a 9781468409048 |c Online |9 978-1-4684-0904-8 | ||
| 024 | 7 | |a 10.1007/978-1-4684-0904-8 |2 doi | |
| 035 | |a (OCoLC)863905673 | ||
| 035 | |a (DE-599)BVBBV042411855 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-83 | ||
| 082 | 0 | |a 530.41 |2 23 | |
| 084 | |a UP 2100 |0 (DE-625)146354: |2 rvk | ||
| 084 | |a PHY 000 |2 stub | ||
| 245 | 1 | 0 | |a Point defects in solids |b semiconductors and molecular crystals ; volume 2 |c edited by James H. Crawford and Lawrence M. Slifkin |
| 264 | 1 | |a New York ; London |b Plenum Press |c 1975 | |
| 300 | |a 1 Online-Ressource (XVI, 480 Seiten) |b Illustrationen | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 500 | |a Volume 1 of Point Defects in Solids has as its major emphasis defects in ionic solids. Volume 2 now extends this emphasis to semiconductors. The first four chapters treat in some detail the creation, kinetic behavior, inter actions, and physical properties of both simple and composite defects in a variety of semiconducting systems. Also included, as in Vol. 1, are chapters on special topics, namely phonon-defect interactions and defects in organic crystals. Defect behavior in semiconductors has been a subject of considerable interest since the discovery some twenty-five years ago that fast neutron irradiation profoundly affected the electrical characteristics of germanium and silicon. Present-day interest has been stimulated by such semiconductor applications as solar cell power plants for space stations and satellites and semiconductor particle and y-ray detectors, since in both radiation damage can cause serious deterioration. Of even greater practical concern is the need to understand particle damage in order to capitalize upon the develop ing technique of ion implantation as a means of device fabrication. Although the periodic international conferences on radiation effects in semiconductors have served the valuable function of summarizing the extensive work being done in this field, these proceedings are much too detailed and lack the background discussion needed to make them useful to the novice | ||
| 650 | 4 | |a Physics | |
| 650 | 4 | |a Condensed Matter Physics | |
| 650 | 0 | 7 | |a Molekülkristall |0 (DE-588)4133483-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Ionenkristall |0 (DE-588)4162318-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Festkörper |0 (DE-588)4016918-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Gitterbaufehler |0 (DE-588)4125030-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Störstelle |0 (DE-588)4193400-3 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Störstelle |0 (DE-588)4193400-3 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Gitterbaufehler |0 (DE-588)4125030-8 |D s |
| 689 | 1 | 1 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 1 | |5 DE-604 | |
| 689 | 2 | 0 | |a Ionenkristall |0 (DE-588)4162318-6 |D s |
| 689 | 2 | 1 | |a Störstelle |0 (DE-588)4193400-3 |D s |
| 689 | 2 | |5 DE-604 | |
| 689 | 3 | 0 | |a Molekülkristall |0 (DE-588)4133483-8 |D s |
| 689 | 3 | 1 | |a Störstelle |0 (DE-588)4193400-3 |D s |
| 689 | 3 | |5 DE-604 | |
| 689 | 4 | 0 | |a Störstelle |0 (DE-588)4193400-3 |D s |
| 689 | 4 | 1 | |a Festkörper |0 (DE-588)4016918-2 |D s |
| 689 | 4 | |5 DE-604 | |
| 689 | 5 | 0 | |a Gitterbaufehler |0 (DE-588)4125030-8 |D s |
| 689 | 5 | 1 | |a Festkörper |0 (DE-588)4016918-2 |D s |
| 689 | 5 | |5 DE-604 | |
| 700 | 1 | |a Crawford, James H. |4 edt | |
| 700 | 1 | |a Slifkin, Lawrence M. |4 edt | |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |z 0-306-37512-5 |
| 856 | 4 | 0 | |u https://doi.org/10.1007/978-1-4684-0904-8 |x Verlag |3 Volltext |
| 912 | |a ZDB-2-PHA | ||
| 912 | |a ZDB-2-BAE | ||
| 940 | 1 | |q ZDB-2-PHA_Archive | |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-027847348 | |
Record in the Search Index
| _version_ | 1835275835823620096 |
|---|---|
| adam_text | |
| any_adam_object | |
| author | Crawford, James H. |
| author2 | Crawford, James H. Slifkin, Lawrence M. |
| author2_role | edt edt |
| author2_variant | j h c jh jhc l m s lm lms |
| author_facet | Crawford, James H. Crawford, James H. Slifkin, Lawrence M. |
| author_role | aut |
| author_sort | Crawford, James H. |
| author_variant | j h c jh jhc |
| building | Verbundindex |
| bvnumber | BV042411855 |
| classification_rvk | UP 2100 |
| classification_tum | PHY 000 |
| collection | ZDB-2-PHA ZDB-2-BAE |
| ctrlnum | (OCoLC)863905673 (DE-599)BVBBV042411855 |
| dewey-full | 530.41 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 530 - Physics |
| dewey-raw | 530.41 |
| dewey-search | 530.41 |
| dewey-sort | 3530.41 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| doi_str_mv | 10.1007/978-1-4684-0904-8 |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>00000nam a2200000zc 4500</leader><controlfield tag="001">BV042411855</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20250618</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">150316s1975 xx a||| o|||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781468409048</subfield><subfield code="c">Online</subfield><subfield code="9">978-1-4684-0904-8</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/978-1-4684-0904-8</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)863905673</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV042411855</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">530.41</subfield><subfield code="2">23</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 2100</subfield><subfield code="0">(DE-625)146354:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 000</subfield><subfield code="2">stub</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Point defects in solids</subfield><subfield code="b">semiconductors and molecular crystals ; volume 2</subfield><subfield code="c">edited by James H. Crawford and Lawrence M. Slifkin</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New York ; London</subfield><subfield code="b">Plenum Press</subfield><subfield code="c">1975</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (XVI, 480 Seiten)</subfield><subfield code="b">Illustrationen</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Volume 1 of Point Defects in Solids has as its major emphasis defects in ionic solids. Volume 2 now extends this emphasis to semiconductors. The first four chapters treat in some detail the creation, kinetic behavior, inter actions, and physical properties of both simple and composite defects in a variety of semiconducting systems. Also included, as in Vol. 1, are chapters on special topics, namely phonon-defect interactions and defects in organic crystals. Defect behavior in semiconductors has been a subject of considerable interest since the discovery some twenty-five years ago that fast neutron irradiation profoundly affected the electrical characteristics of germanium and silicon. Present-day interest has been stimulated by such semiconductor applications as solar cell power plants for space stations and satellites and semiconductor particle and y-ray detectors, since in both radiation damage can cause serious deterioration. Of even greater practical concern is the need to understand particle damage in order to capitalize upon the develop ing technique of ion implantation as a means of device fabrication. Although the periodic international conferences on radiation effects in semiconductors have served the valuable function of summarizing the extensive work being done in this field, these proceedings are much too detailed and lack the background discussion needed to make them useful to the novice</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Physics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Condensed Matter Physics</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Molekülkristall</subfield><subfield code="0">(DE-588)4133483-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Ionenkristall</subfield><subfield code="0">(DE-588)4162318-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Festkörper</subfield><subfield code="0">(DE-588)4016918-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Gitterbaufehler</subfield><subfield code="0">(DE-588)4125030-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Störstelle</subfield><subfield code="0">(DE-588)4193400-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Störstelle</subfield><subfield code="0">(DE-588)4193400-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Gitterbaufehler</subfield><subfield code="0">(DE-588)4125030-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Ionenkristall</subfield><subfield code="0">(DE-588)4162318-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2="1"><subfield code="a">Störstelle</subfield><subfield code="0">(DE-588)4193400-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="3" ind2="0"><subfield code="a">Molekülkristall</subfield><subfield code="0">(DE-588)4133483-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="3" ind2="1"><subfield code="a">Störstelle</subfield><subfield code="0">(DE-588)4193400-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="3" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="4" ind2="0"><subfield code="a">Störstelle</subfield><subfield code="0">(DE-588)4193400-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="4" ind2="1"><subfield code="a">Festkörper</subfield><subfield code="0">(DE-588)4016918-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="4" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="5" ind2="0"><subfield code="a">Gitterbaufehler</subfield><subfield code="0">(DE-588)4125030-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="5" ind2="1"><subfield code="a">Festkörper</subfield><subfield code="0">(DE-588)4016918-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="5" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Crawford, James H.</subfield><subfield code="4">edt</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Slifkin, Lawrence M.</subfield><subfield code="4">edt</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe</subfield><subfield code="z">0-306-37512-5</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/978-1-4684-0904-8</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-BAE</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">ZDB-2-PHA_Archive</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-027847348</subfield></datafield></record></collection> |
| id | DE-604.BV042411855 |
| illustrated | Illustrated |
| indexdate | 2025-06-18T14:03:48Z |
| institution | BVB |
| isbn | 9781468409048 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027847348 |
| oclc_num | 863905673 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-83 |
| physical | 1 Online-Ressource (XVI, 480 Seiten) Illustrationen |
| psigel | ZDB-2-PHA ZDB-2-BAE ZDB-2-PHA_Archive |
| publishDate | 1975 |
| publishDateSearch | 1975 |
| publishDateSort | 1975 |
| publisher | Plenum Press |
| record_format | marc |
| spelling | Point defects in solids semiconductors and molecular crystals ; volume 2 edited by James H. Crawford and Lawrence M. Slifkin New York ; London Plenum Press 1975 1 Online-Ressource (XVI, 480 Seiten) Illustrationen txt rdacontent c rdamedia cr rdacarrier Volume 1 of Point Defects in Solids has as its major emphasis defects in ionic solids. Volume 2 now extends this emphasis to semiconductors. The first four chapters treat in some detail the creation, kinetic behavior, inter actions, and physical properties of both simple and composite defects in a variety of semiconducting systems. Also included, as in Vol. 1, are chapters on special topics, namely phonon-defect interactions and defects in organic crystals. Defect behavior in semiconductors has been a subject of considerable interest since the discovery some twenty-five years ago that fast neutron irradiation profoundly affected the electrical characteristics of germanium and silicon. Present-day interest has been stimulated by such semiconductor applications as solar cell power plants for space stations and satellites and semiconductor particle and y-ray detectors, since in both radiation damage can cause serious deterioration. Of even greater practical concern is the need to understand particle damage in order to capitalize upon the develop ing technique of ion implantation as a means of device fabrication. Although the periodic international conferences on radiation effects in semiconductors have served the valuable function of summarizing the extensive work being done in this field, these proceedings are much too detailed and lack the background discussion needed to make them useful to the novice Physics Condensed Matter Physics Molekülkristall (DE-588)4133483-8 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Ionenkristall (DE-588)4162318-6 gnd rswk-swf Festkörper (DE-588)4016918-2 gnd rswk-swf Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf Störstelle (DE-588)4193400-3 gnd rswk-swf Störstelle (DE-588)4193400-3 s DE-604 Gitterbaufehler (DE-588)4125030-8 s Halbleiter (DE-588)4022993-2 s Ionenkristall (DE-588)4162318-6 s Molekülkristall (DE-588)4133483-8 s Festkörper (DE-588)4016918-2 s Crawford, James H. edt Slifkin, Lawrence M. edt Erscheint auch als Druck-Ausgabe 0-306-37512-5 https://doi.org/10.1007/978-1-4684-0904-8 Verlag Volltext |
| spellingShingle | Crawford, James H. Point defects in solids semiconductors and molecular crystals ; volume 2 Physics Condensed Matter Physics Molekülkristall (DE-588)4133483-8 gnd Halbleiter (DE-588)4022993-2 gnd Ionenkristall (DE-588)4162318-6 gnd Festkörper (DE-588)4016918-2 gnd Gitterbaufehler (DE-588)4125030-8 gnd Störstelle (DE-588)4193400-3 gnd |
| subject_GND | (DE-588)4133483-8 (DE-588)4022993-2 (DE-588)4162318-6 (DE-588)4016918-2 (DE-588)4125030-8 (DE-588)4193400-3 |
| title | Point defects in solids semiconductors and molecular crystals ; volume 2 |
| title_auth | Point defects in solids semiconductors and molecular crystals ; volume 2 |
| title_exact_search | Point defects in solids semiconductors and molecular crystals ; volume 2 |
| title_full | Point defects in solids semiconductors and molecular crystals ; volume 2 edited by James H. Crawford and Lawrence M. Slifkin |
| title_fullStr | Point defects in solids semiconductors and molecular crystals ; volume 2 edited by James H. Crawford and Lawrence M. Slifkin |
| title_full_unstemmed | Point defects in solids semiconductors and molecular crystals ; volume 2 edited by James H. Crawford and Lawrence M. Slifkin |
| title_short | Point defects in solids |
| title_sort | point defects in solids semiconductors and molecular crystals volume 2 |
| title_sub | semiconductors and molecular crystals ; volume 2 |
| topic | Physics Condensed Matter Physics Molekülkristall (DE-588)4133483-8 gnd Halbleiter (DE-588)4022993-2 gnd Ionenkristall (DE-588)4162318-6 gnd Festkörper (DE-588)4016918-2 gnd Gitterbaufehler (DE-588)4125030-8 gnd Störstelle (DE-588)4193400-3 gnd |
| topic_facet | Physics Condensed Matter Physics Molekülkristall Halbleiter Ionenkristall Festkörper Gitterbaufehler Störstelle |
| url | https://doi.org/10.1007/978-1-4684-0904-8 |
| work_keys_str_mv | AT crawfordjamesh pointdefectsinsolidssemiconductorsandmolecularcrystalsvolume2 AT slifkinlawrencem pointdefectsinsolidssemiconductorsandmolecularcrystalsvolume2 |