Point Defects in Solids: Volume 2 Semiconductors and Molecular Crystals
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Springer US
1975
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| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | Volume 1 of Point Defects in Solids has as its major emphasis defects in ionic solids. Volume 2 now extends this emphasis to semiconductors. The first four chapters treat in some detail the creation, kinetic behavior, inter actions, and physical properties of both simple and composite defects in a variety of semiconducting systems. Also included, as in Vol. 1, are chapters on special topics, namely phonon-defect interactions and defects in organic crystals. Defect behavior in semiconductors has been a subject of considerable interest since the discovery some twenty-five years ago that fast neutron irradiation profoundly affected the electrical characteristics of germanium and silicon. Present-day interest has been stimulated by such semiconductor applications as solar cell power plants for space stations and satellites and semiconductor particle and y-ray detectors, since in both radiation damage can cause serious deterioration. Of even greater practical concern is the need to understand particle damage in order to capitalize upon the develop ing technique of ion implantation as a means of device fabrication. Although the periodic international conferences on radiation effects in semiconductors have served the valuable function of summarizing the extensive work being done in this field, these proceedings are much too detailed and lack the background discussion needed to make them useful to the novice |
| Beschreibung: | 1 Online-Ressource (XVI, 480 p.) 25 illus |
| ISBN: | 9781468409048 9781468409062 |
| DOI: | 10.1007/978-1-4684-0904-8 |
Internformat
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV042411855 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 150316s1975 |||| o||u| ||||||eng d | ||
| 020 | |a 9781468409048 |c Online |9 978-1-4684-0904-8 | ||
| 020 | |a 9781468409062 |c Print |9 978-1-4684-0906-2 | ||
| 024 | 7 | |a 10.1007/978-1-4684-0904-8 |2 doi | |
| 035 | |a (OCoLC)863905673 | ||
| 035 | |a (DE-599)BVBBV042411855 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-83 | ||
| 082 | 0 | |a 530.41 |2 23 | |
| 084 | |a PHY 000 |2 stub | ||
| 100 | 1 | |a Crawford, James H. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Point Defects in Solids |b Volume 2 Semiconductors and Molecular Crystals |c edited by James H. Crawford, Lawrence M. Slifkin |
| 264 | 1 | |a Boston, MA |b Springer US |c 1975 | |
| 300 | |a 1 Online-Ressource (XVI, 480 p.) |b 25 illus | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 500 | |a Volume 1 of Point Defects in Solids has as its major emphasis defects in ionic solids. Volume 2 now extends this emphasis to semiconductors. The first four chapters treat in some detail the creation, kinetic behavior, inter actions, and physical properties of both simple and composite defects in a variety of semiconducting systems. Also included, as in Vol. 1, are chapters on special topics, namely phonon-defect interactions and defects in organic crystals. Defect behavior in semiconductors has been a subject of considerable interest since the discovery some twenty-five years ago that fast neutron irradiation profoundly affected the electrical characteristics of germanium and silicon. Present-day interest has been stimulated by such semiconductor applications as solar cell power plants for space stations and satellites and semiconductor particle and y-ray detectors, since in both radiation damage can cause serious deterioration. Of even greater practical concern is the need to understand particle damage in order to capitalize upon the develop ing technique of ion implantation as a means of device fabrication. Although the periodic international conferences on radiation effects in semiconductors have served the valuable function of summarizing the extensive work being done in this field, these proceedings are much too detailed and lack the background discussion needed to make them useful to the novice | ||
| 650 | 4 | |a Physics | |
| 650 | 4 | |a Condensed Matter Physics | |
| 700 | 1 | |a Slifkin, Lawrence M. |e Sonstige |4 oth | |
| 856 | 4 | 0 | |u https://doi.org/10.1007/978-1-4684-0904-8 |x Verlag |3 Volltext |
| 912 | |a ZDB-2-PHA |a ZDB-2-BAE | ||
| 940 | 1 | |q ZDB-2-PHA_Archive | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-027847348 | ||
Datensatz im Suchindex
| _version_ | 1804153073828888576 |
|---|---|
| any_adam_object | |
| author | Crawford, James H. |
| author_facet | Crawford, James H. |
| author_role | aut |
| author_sort | Crawford, James H. |
| author_variant | j h c jh jhc |
| building | Verbundindex |
| bvnumber | BV042411855 |
| classification_tum | PHY 000 |
| collection | ZDB-2-PHA ZDB-2-BAE |
| ctrlnum | (OCoLC)863905673 (DE-599)BVBBV042411855 |
| dewey-full | 530.41 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 530 - Physics |
| dewey-raw | 530.41 |
| dewey-search | 530.41 |
| dewey-sort | 3530.41 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| doi_str_mv | 10.1007/978-1-4684-0904-8 |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02696nmm a2200385zc 4500</leader><controlfield tag="001">BV042411855</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">150316s1975 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781468409048</subfield><subfield code="c">Online</subfield><subfield code="9">978-1-4684-0904-8</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781468409062</subfield><subfield code="c">Print</subfield><subfield code="9">978-1-4684-0906-2</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/978-1-4684-0904-8</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)863905673</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV042411855</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">530.41</subfield><subfield code="2">23</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 000</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Crawford, James H.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Point Defects in Solids</subfield><subfield code="b">Volume 2 Semiconductors and Molecular Crystals</subfield><subfield code="c">edited by James H. Crawford, Lawrence M. Slifkin</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Boston, MA</subfield><subfield code="b">Springer US</subfield><subfield code="c">1975</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (XVI, 480 p.)</subfield><subfield code="b">25 illus</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Volume 1 of Point Defects in Solids has as its major emphasis defects in ionic solids. Volume 2 now extends this emphasis to semiconductors. The first four chapters treat in some detail the creation, kinetic behavior, inter actions, and physical properties of both simple and composite defects in a variety of semiconducting systems. Also included, as in Vol. 1, are chapters on special topics, namely phonon-defect interactions and defects in organic crystals. Defect behavior in semiconductors has been a subject of considerable interest since the discovery some twenty-five years ago that fast neutron irradiation profoundly affected the electrical characteristics of germanium and silicon. Present-day interest has been stimulated by such semiconductor applications as solar cell power plants for space stations and satellites and semiconductor particle and y-ray detectors, since in both radiation damage can cause serious deterioration. Of even greater practical concern is the need to understand particle damage in order to capitalize upon the develop ing technique of ion implantation as a means of device fabrication. Although the periodic international conferences on radiation effects in semiconductors have served the valuable function of summarizing the extensive work being done in this field, these proceedings are much too detailed and lack the background discussion needed to make them useful to the novice</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Physics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Condensed Matter Physics</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Slifkin, Lawrence M.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/978-1-4684-0904-8</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-PHA</subfield><subfield code="a">ZDB-2-BAE</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">ZDB-2-PHA_Archive</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-027847348</subfield></datafield></record></collection> |
| id | DE-604.BV042411855 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T01:20:49Z |
| institution | BVB |
| isbn | 9781468409048 9781468409062 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027847348 |
| oclc_num | 863905673 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-83 |
| physical | 1 Online-Ressource (XVI, 480 p.) 25 illus |
| psigel | ZDB-2-PHA ZDB-2-BAE ZDB-2-PHA_Archive |
| publishDate | 1975 |
| publishDateSearch | 1975 |
| publishDateSort | 1975 |
| publisher | Springer US |
| record_format | marc |
| spelling | Crawford, James H. Verfasser aut Point Defects in Solids Volume 2 Semiconductors and Molecular Crystals edited by James H. Crawford, Lawrence M. Slifkin Boston, MA Springer US 1975 1 Online-Ressource (XVI, 480 p.) 25 illus txt rdacontent c rdamedia cr rdacarrier Volume 1 of Point Defects in Solids has as its major emphasis defects in ionic solids. Volume 2 now extends this emphasis to semiconductors. The first four chapters treat in some detail the creation, kinetic behavior, inter actions, and physical properties of both simple and composite defects in a variety of semiconducting systems. Also included, as in Vol. 1, are chapters on special topics, namely phonon-defect interactions and defects in organic crystals. Defect behavior in semiconductors has been a subject of considerable interest since the discovery some twenty-five years ago that fast neutron irradiation profoundly affected the electrical characteristics of germanium and silicon. Present-day interest has been stimulated by such semiconductor applications as solar cell power plants for space stations and satellites and semiconductor particle and y-ray detectors, since in both radiation damage can cause serious deterioration. Of even greater practical concern is the need to understand particle damage in order to capitalize upon the develop ing technique of ion implantation as a means of device fabrication. Although the periodic international conferences on radiation effects in semiconductors have served the valuable function of summarizing the extensive work being done in this field, these proceedings are much too detailed and lack the background discussion needed to make them useful to the novice Physics Condensed Matter Physics Slifkin, Lawrence M. Sonstige oth https://doi.org/10.1007/978-1-4684-0904-8 Verlag Volltext |
| spellingShingle | Crawford, James H. Point Defects in Solids Volume 2 Semiconductors and Molecular Crystals Physics Condensed Matter Physics |
| title | Point Defects in Solids Volume 2 Semiconductors and Molecular Crystals |
| title_auth | Point Defects in Solids Volume 2 Semiconductors and Molecular Crystals |
| title_exact_search | Point Defects in Solids Volume 2 Semiconductors and Molecular Crystals |
| title_full | Point Defects in Solids Volume 2 Semiconductors and Molecular Crystals edited by James H. Crawford, Lawrence M. Slifkin |
| title_fullStr | Point Defects in Solids Volume 2 Semiconductors and Molecular Crystals edited by James H. Crawford, Lawrence M. Slifkin |
| title_full_unstemmed | Point Defects in Solids Volume 2 Semiconductors and Molecular Crystals edited by James H. Crawford, Lawrence M. Slifkin |
| title_short | Point Defects in Solids |
| title_sort | point defects in solids volume 2 semiconductors and molecular crystals |
| title_sub | Volume 2 Semiconductors and Molecular Crystals |
| topic | Physics Condensed Matter Physics |
| topic_facet | Physics Condensed Matter Physics |
| url | https://doi.org/10.1007/978-1-4684-0904-8 |
| work_keys_str_mv | AT crawfordjamesh pointdefectsinsolidsvolume2semiconductorsandmolecularcrystals AT slifkinlawrencem pointdefectsinsolidsvolume2semiconductorsandmolecularcrystals |