Neutron Transmutation Doping of Semiconductor Materials: proceedings of the Fourth Neutron Transmutation Doping Conference held, June 1-3, 1982, at the National Bureau of Standards, Gaithersburg, Maryland
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| Format: | Elektronisch Tagungsbericht E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Springer US
1984
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| Online-Zugang: | Volltext |
| Beschreibung: | viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characterization of NTD silicon, and the use of NTD silicon for device applications. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron transmutation doping of nonsilicon semiconductors had begun to accelerate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were presented on NTD of nonsilicon semiconductors, five papers on irradiation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indicate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity |
| Beschreibung: | 1 Online-Ressource |
| ISBN: | 9781461326953 9781461296751 |
| DOI: | 10.1007/978-1-4613-2695-3 |
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| spelling | Neutron Transmutation Doping of Semiconductor Materials proceedings of the Fourth Neutron Transmutation Doping Conference held, June 1-3, 1982, at the National Bureau of Standards, Gaithersburg, Maryland edited by Robert D. Larrabee Boston, MA Springer US 1984 1 Online-Ressource txt rdacontent c rdamedia cr rdacarrier viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characterization of NTD silicon, and the use of NTD silicon for device applications. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron transmutation doping of nonsilicon semiconductors had begun to accelerate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were presented on NTD of nonsilicon semiconductors, five papers on irradiation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indicate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity Physics Computer engineering Semiconductors Electrical Engineering Neutronentransmutationsdotierung (DE-588)4171662-0 gnd rswk-swf 1\p (DE-588)1071861417 Konferenzschrift 1982 Gaithersburg Md. gnd-content Neutronentransmutationsdotierung (DE-588)4171662-0 s 2\p DE-604 Larrabee, Robert D. edt Neutron Transmutation Doping Conference 4 1982 Gaithersburg, Md. Sonstige (DE-588)5182211-8 oth Erscheint auch als Druck-Ausgabe 0-306-41504-6 https://doi.org/10.1007/978-1-4613-2695-3 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Neutron Transmutation Doping of Semiconductor Materials proceedings of the Fourth Neutron Transmutation Doping Conference held, June 1-3, 1982, at the National Bureau of Standards, Gaithersburg, Maryland Physics Computer engineering Semiconductors Electrical Engineering Neutronentransmutationsdotierung (DE-588)4171662-0 gnd |
| subject_GND | (DE-588)4171662-0 (DE-588)1071861417 |
| title | Neutron Transmutation Doping of Semiconductor Materials proceedings of the Fourth Neutron Transmutation Doping Conference held, June 1-3, 1982, at the National Bureau of Standards, Gaithersburg, Maryland |
| title_auth | Neutron Transmutation Doping of Semiconductor Materials proceedings of the Fourth Neutron Transmutation Doping Conference held, June 1-3, 1982, at the National Bureau of Standards, Gaithersburg, Maryland |
| title_exact_search | Neutron Transmutation Doping of Semiconductor Materials proceedings of the Fourth Neutron Transmutation Doping Conference held, June 1-3, 1982, at the National Bureau of Standards, Gaithersburg, Maryland |
| title_full | Neutron Transmutation Doping of Semiconductor Materials proceedings of the Fourth Neutron Transmutation Doping Conference held, June 1-3, 1982, at the National Bureau of Standards, Gaithersburg, Maryland edited by Robert D. Larrabee |
| title_fullStr | Neutron Transmutation Doping of Semiconductor Materials proceedings of the Fourth Neutron Transmutation Doping Conference held, June 1-3, 1982, at the National Bureau of Standards, Gaithersburg, Maryland edited by Robert D. Larrabee |
| title_full_unstemmed | Neutron Transmutation Doping of Semiconductor Materials proceedings of the Fourth Neutron Transmutation Doping Conference held, June 1-3, 1982, at the National Bureau of Standards, Gaithersburg, Maryland edited by Robert D. Larrabee |
| title_short | Neutron Transmutation Doping of Semiconductor Materials |
| title_sort | neutron transmutation doping of semiconductor materials proceedings of the fourth neutron transmutation doping conference held june 1 3 1982 at the national bureau of standards gaithersburg maryland |
| title_sub | proceedings of the Fourth Neutron Transmutation Doping Conference held, June 1-3, 1982, at the National Bureau of Standards, Gaithersburg, Maryland |
| topic | Physics Computer engineering Semiconductors Electrical Engineering Neutronentransmutationsdotierung (DE-588)4171662-0 gnd |
| topic_facet | Physics Computer engineering Semiconductors Electrical Engineering Neutronentransmutationsdotierung Konferenzschrift 1982 Gaithersburg Md. |
| url | https://doi.org/10.1007/978-1-4613-2695-3 |
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