Reduced thermal processing for ULSI: proceedings of a NATO Advanced Study Institute on Reduced Thermal Processing for ULSI held June 20 - July 1, 1988, in Boca Raton, Florida
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Elektronisch Tagungsbericht E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Springer US
1989
|
| Schriftenreihe: | NATO ASI Series, Series B: Physics
207 |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | As feature dimensions of integrated circuits shrink, the associated geometrical constraints on junction depth impose severe restrictions on the thermal budget for processing such devices. Furthermore, due to the relatively low melting point of the first aluminum metallization level, such restrictions extend to the fabrication of multilevel structures that are now essential in increasing packing density of interconnect lines. The fabrication of ultra large scale integrated (ULSI) devices under thermal budget restrictions requires the reassessment of existing and the development of new microelectronic materials and processes. This book addresses three broad but interrelated areas. The first area focuses on the subject of rapid thermal processing (RTP), a technology that allows minimization of processing time while relaxing the constraints on high temperature. Initially developed to limit dopant redistribution, current applications of RTP are shown here to encompass annealing, oxidation, nitridation, silicidation, glass reflow, and contact sintering. In a second but complementary area, advances in equipment design and performance of rapid thermal processing equipment are presented in conjunction with associated issues of temperature measurement and control. Defect mechanisms are assessed together with the resulting properties of rapidly deposited and processed films. The concept of RTP integration for a full CMOS device process is also examined together with its impact on device characteristics |
| Beschreibung: | 1 Online-Ressource (450p) |
| ISBN: | 9781461305415 9781461278573 |
| DOI: | 10.1007/978-1-4613-0541-5 |
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| 100 | 1 | |a Levy, Roland A. |4 edt | |
| 245 | 1 | 0 | |a Reduced thermal processing for ULSI |b proceedings of a NATO Advanced Study Institute on Reduced Thermal Processing for ULSI held June 20 - July 1, 1988, in Boca Raton, Florida |c edited by Roland A. Levy |
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| 500 | |a As feature dimensions of integrated circuits shrink, the associated geometrical constraints on junction depth impose severe restrictions on the thermal budget for processing such devices. Furthermore, due to the relatively low melting point of the first aluminum metallization level, such restrictions extend to the fabrication of multilevel structures that are now essential in increasing packing density of interconnect lines. The fabrication of ultra large scale integrated (ULSI) devices under thermal budget restrictions requires the reassessment of existing and the development of new microelectronic materials and processes. This book addresses three broad but interrelated areas. The first area focuses on the subject of rapid thermal processing (RTP), a technology that allows minimization of processing time while relaxing the constraints on high temperature. Initially developed to limit dopant redistribution, current applications of RTP are shown here to encompass annealing, oxidation, nitridation, silicidation, glass reflow, and contact sintering. In a second but complementary area, advances in equipment design and performance of rapid thermal processing equipment are presented in conjunction with associated issues of temperature measurement and control. Defect mechanisms are assessed together with the resulting properties of rapidly deposited and processed films. The concept of RTP integration for a full CMOS device process is also examined together with its impact on device characteristics | ||
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Datensatz im Suchindex
| _version_ | 1804153072306356224 |
|---|---|
| any_adam_object | |
| author2 | Levy, Roland A. |
| author2_role | edt |
| author2_variant | r a l ra ral |
| author_facet | Levy, Roland A. |
| building | Verbundindex |
| bvnumber | BV042411216 |
| classification_rvk | UX 2350 ZN 4950 |
| classification_tum | PHY 000 |
| collection | ZDB-2-PHA ZDB-2-BAE |
| ctrlnum | (OCoLC)906698553 (DE-599)BVBBV042411216 |
| dewey-full | 530.41 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 530 - Physics |
| dewey-raw | 530.41 |
| dewey-search | 530.41 |
| dewey-sort | 3530.41 |
| dewey-tens | 530 - Physics |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1007/978-1-4613-0541-5 |
| format | Electronic Conference Proceeding eBook |
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| spelling | Levy, Roland A. edt Reduced thermal processing for ULSI proceedings of a NATO Advanced Study Institute on Reduced Thermal Processing for ULSI held June 20 - July 1, 1988, in Boca Raton, Florida edited by Roland A. Levy Boston, MA Springer US 1989 1 Online-Ressource (450p) txt rdacontent c rdamedia cr rdacarrier NATO ASI Series, Series B: Physics 207 As feature dimensions of integrated circuits shrink, the associated geometrical constraints on junction depth impose severe restrictions on the thermal budget for processing such devices. Furthermore, due to the relatively low melting point of the first aluminum metallization level, such restrictions extend to the fabrication of multilevel structures that are now essential in increasing packing density of interconnect lines. The fabrication of ultra large scale integrated (ULSI) devices under thermal budget restrictions requires the reassessment of existing and the development of new microelectronic materials and processes. This book addresses three broad but interrelated areas. The first area focuses on the subject of rapid thermal processing (RTP), a technology that allows minimization of processing time while relaxing the constraints on high temperature. Initially developed to limit dopant redistribution, current applications of RTP are shown here to encompass annealing, oxidation, nitridation, silicidation, glass reflow, and contact sintering. In a second but complementary area, advances in equipment design and performance of rapid thermal processing equipment are presented in conjunction with associated issues of temperature measurement and control. Defect mechanisms are assessed together with the resulting properties of rapidly deposited and processed films. The concept of RTP integration for a full CMOS device process is also examined together with its impact on device characteristics Physics Crystallography Solid State Physics Spectroscopy and Microscopy Condensed Matter Physics ULSI (DE-588)4226286-0 gnd rswk-swf Thermische Belastung (DE-588)4059816-0 gnd rswk-swf Wärmebehandlung (DE-588)4064180-6 gnd rswk-swf 1\p (DE-588)1071861417 Konferenzschrift 1988 Boca Raton Fla. gnd-content ULSI (DE-588)4226286-0 s Thermische Belastung (DE-588)4059816-0 s 2\p DE-604 Wärmebehandlung (DE-588)4064180-6 s 3\p DE-604 Advanced Study Institute on Reduced Thermal Processing for ULSI 1988 Boca Raton, Fla. Sonstige (DE-588)5013870-4 oth Erscheint auch als Druck-Ausgabe 0-306-43382-6 https://doi.org/10.1007/978-1-4613-0541-5 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Reduced thermal processing for ULSI proceedings of a NATO Advanced Study Institute on Reduced Thermal Processing for ULSI held June 20 - July 1, 1988, in Boca Raton, Florida Physics Crystallography Solid State Physics Spectroscopy and Microscopy Condensed Matter Physics ULSI (DE-588)4226286-0 gnd Thermische Belastung (DE-588)4059816-0 gnd Wärmebehandlung (DE-588)4064180-6 gnd |
| subject_GND | (DE-588)4226286-0 (DE-588)4059816-0 (DE-588)4064180-6 (DE-588)1071861417 |
| title | Reduced thermal processing for ULSI proceedings of a NATO Advanced Study Institute on Reduced Thermal Processing for ULSI held June 20 - July 1, 1988, in Boca Raton, Florida |
| title_auth | Reduced thermal processing for ULSI proceedings of a NATO Advanced Study Institute on Reduced Thermal Processing for ULSI held June 20 - July 1, 1988, in Boca Raton, Florida |
| title_exact_search | Reduced thermal processing for ULSI proceedings of a NATO Advanced Study Institute on Reduced Thermal Processing for ULSI held June 20 - July 1, 1988, in Boca Raton, Florida |
| title_full | Reduced thermal processing for ULSI proceedings of a NATO Advanced Study Institute on Reduced Thermal Processing for ULSI held June 20 - July 1, 1988, in Boca Raton, Florida edited by Roland A. Levy |
| title_fullStr | Reduced thermal processing for ULSI proceedings of a NATO Advanced Study Institute on Reduced Thermal Processing for ULSI held June 20 - July 1, 1988, in Boca Raton, Florida edited by Roland A. Levy |
| title_full_unstemmed | Reduced thermal processing for ULSI proceedings of a NATO Advanced Study Institute on Reduced Thermal Processing for ULSI held June 20 - July 1, 1988, in Boca Raton, Florida edited by Roland A. Levy |
| title_short | Reduced thermal processing for ULSI |
| title_sort | reduced thermal processing for ulsi proceedings of a nato advanced study institute on reduced thermal processing for ulsi held june 20 july 1 1988 in boca raton florida |
| title_sub | proceedings of a NATO Advanced Study Institute on Reduced Thermal Processing for ULSI held June 20 - July 1, 1988, in Boca Raton, Florida |
| topic | Physics Crystallography Solid State Physics Spectroscopy and Microscopy Condensed Matter Physics ULSI (DE-588)4226286-0 gnd Thermische Belastung (DE-588)4059816-0 gnd Wärmebehandlung (DE-588)4064180-6 gnd |
| topic_facet | Physics Crystallography Solid State Physics Spectroscopy and Microscopy Condensed Matter Physics ULSI Thermische Belastung Wärmebehandlung Konferenzschrift 1988 Boca Raton Fla. |
| url | https://doi.org/10.1007/978-1-4613-0541-5 |
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