Atomic layer deposition of aluminum oxide on crystalline silicon: fundamental interface properties and application to solar cells
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Aachen
Shaker
2014
|
| Schriftenreihe: | Berichte aus der Physik
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | 189 S. Ill., graph. Darst. |
| ISBN: | 9783844030396 |
Internformat
MARC
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| 100 | 1 | |a Werner, Florian |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Atomic layer deposition of aluminum oxide on crystalline silicon |b fundamental interface properties and application to solar cells |c Florian Werner |
| 264 | 1 | |a Aachen |b Shaker |c 2014 | |
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Datensatz im Suchindex
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|---|---|
| adam_text | CONTENTS
1 INTRODUCTION 1
2 ATOMIC LAYER DEPOSITION (ALD) OF ALUMINUM OXIDE THIN
FILMS 7
2.1 PRINCIPLE OF ATOMIC LAYER DEPOSITION 7
2.2 SEQUENTIAL ATOMIC LAYER DEPOSITION 10
2.2.1 DEPOSITION PARAMETERS AND SAMPLE PREPARATION . . 10
2.2.2 OPTICAL CHARACTERIZATION 13
2.2.3 THERMAL STABILITY OF THE PASSIVATION QUALITY .... 16
2.2.4 SURFACE PASSIVATION ON DIFFERENT SI WAFER SURFACES . 18
2.3 HIGH-THROUGHPUT SPATIAL ATOMIC LAYER DEPOSITION 20
2.3.1 PRINCIPLE OF SPATIAL ALD 20
2.3.2 THERMAL STABILITY OF THE SURFACE PASSIVATION .... 22
2.3.3 SURFACE PASSIVATION ON LARGE AREA 24
3 THEORY AND ANALYSIS 29
3.1 BAND BENDING AT THE C-SI SURFACE 29
3.1.1 ENERGY BANDS AND CHARGE DISTRIBUTION 29
3.1.2 CHARGE CARRIER DENSITIES IN FERMI-DIRAC AND BOLTZ-
MANN STATISTICS 32
3.1.3 SOLUTION OF THE CHARGE NEUTRALITY CONDITION 34
3.1.4 RESPONSE TO GATE VOLTAGE VARIATIONS 36
3.1.5 INTERFACE-TRAPPED CHARGE DENSITY 38
3.2 CAPACITANCE - VOLTAGE ANALYSIS 39
3.2.1 FLAT-BAND VOLTAGE AND CAPACITANCE MODEL 39
3.2.2 EXTRACTION OF THE INTERFACE STATE DENSITY 42
3.3 ADMITTANCE SPECTROSCOPY 47
3.3.1 ANALYSIS OF EQUIVALENT PARALLEL CONDUCTANCE SPECTRA 47
3.3.2 SURFACE POTENTIAL FLUCTUATIONS 51
HTTP://D-NB.INFO/1056885661
3.3.3 MEASUREMENT RANGE AND UNCERTAINTY 54
3.4 CORONA CHARGE ANALYSIS 55
4 MODEL OF THE C-SI/A^OA INTERFACE 61
4.1 STRUCTURAL PROPERTIES OF THE C-SI/ABOA INTERFACE 61
4.2 CHEMICAL COMPOSITION OF THE C-SI/A^OS INTERFACE 64
4.2.1 X-RAY PHOTOELECTRON SPECTROSCOPY 64
4.2.2 DIELECTRIC PERMITTIVITY 71
4.3 ORIGIN OF THE NEGATIVE FIXED CHARGES 74
4.3.1 DEFECT AND CHARGE FORMATION UNDER APPLIED BIAS . . 76
4.3.2 SPATIAL HOMOGENEITY OF THE NEGATIVE FIXED CHARGE
DENSITY 82
5 RECOMBINATION AT THE C-SI/AL
2
0
3
INTERFACE 85
5.1 ROLE OF CHEMICAL AND FIELD-EFFECT PASSIVATION 85
5.2 INTERFACE RECOMBINATION PARAMETERS 89
5.2.1 INTERFACE STATE DENSITY 89
5.2.2 CAPTURE CROSS SECTIONS AND TIME CONSTANTS 92
5.2.3 DEFECT MODEL 95
5.3 NUMERICAL SIMULATIONS OF THE SURFACE RECOMBINATION VELOCITY
100
5.3.1 MODELING THE EFFECTIVE SURFACE RECOMBINATION VELOCITY 100
5.3.2 VARIATION OF SURFACE POTENTIAL 101
5.3.3 SIMPLIFIED MODEL ASSUMING A SINGLE INTERFACE TRAP . 105
6 IMPROVED QUANTITATIVE DESCRIPTION OF AUGER RECOMBINA
TION IN C-SI 109
6.1 REVIEW OF AUGER THEORY AND EARLIER PARAMETERIZATION . . . 109
6.2 LIFETIME MEASUREMENTS OF SILICON SAMPLES OF VARIOUS DOPANT
CONCENTRATIONS 112
6.2.1 SAMPLE SELECTION AND MEASUREMENT TECHNIQUES . . . 112
6.2.2 UNCERTAINTY RANGE OF THE LIFETIME MEASUREMENTS . . 113
6.2.3 EFFECTIVE LIFETIME AS A FUNCTION OF DOPANT CONCEN
TRATION AND INJECTION DENSITY 115
6.3 EXTRACTION OF THE AUGER RECOMBINATION RATE 119
6.3.1 RADIATIVE RECOMBINATION 119
6.3.2 EXTRINSIC RECOMBINATION 120
6.3.3 NEW PARAMETERIZATION OF AUGER RECOMBINATION . . 122
6.4 APPROXIMATION OF INTRINSIC RECOMBINATION IN SENTAURUS
DEVICE 123
7 INVERSION LAYER SOLAR CELLS ON RA-TYPE C-SI 127
7.1 ALUMINUM-DOPED LASER CONTACTS 127
7.2 LATERAL CURRENT TRANSPORT IN THE HOLE INVERSION LAYER ... 129
7.2.1 IL SHEET RESISTANCE IN THE DARK 129
7.2.2 IL SHEET RESISTANCE UNDER ILLUMINATION 134
7.2.3 IL HOLE MOBILITY 137
7.3 EFFICIENCY POTENTIAL OF IL SOLAR CELLS ON N-TYPE SI 141
7.3.1 SURFACE PASSIVATION OF IL EMITTERS 141
7.3.2 SENTAURUS DEVICE SIMULATIONS 143
7.4 EXPERIMENTAL REALIZATION OF IL HOLE EMITTER SOLAR CELLS ON
N-TYPE SILICON 150
7.4.1 SURFACE CHARGE DEPENDENCE OF CURRENT COLLECTION . . 150
7.4.2 REAR EMITTER IL SOLAR CELLS ON N-TYPE SI 151
8 SUMMARY 157
APPENDIX 163
BIBLIOGRAPHY 165
PUBLICATIONS 181
ACKNOWLEDGMENTS 187
CURRICULUM VITAE
189
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| id | DE-604.BV042338413 |
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| indexdate | 2024-07-10T01:18:49Z |
| institution | BVB |
| isbn | 9783844030396 |
| language | English |
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| physical | 189 S. Ill., graph. Darst. |
| publishDate | 2014 |
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| publisher | Shaker |
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| series2 | Berichte aus der Physik |
| spelling | Werner, Florian Verfasser aut Atomic layer deposition of aluminum oxide on crystalline silicon fundamental interface properties and application to solar cells Florian Werner Aachen Shaker 2014 189 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Berichte aus der Physik Zugl.: Hannover, Univ., Diss., 2014 Siliciumhalbleiter (DE-588)4274465-9 gnd rswk-swf Dielektrische Schicht (DE-588)4194257-7 gnd rswk-swf Aluminiumoxide (DE-588)4001590-7 gnd rswk-swf Inversionsschicht (DE-588)4123445-5 gnd rswk-swf Atomlagenabscheidung (DE-588)7712127-2 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Aluminiumoxide (DE-588)4001590-7 s Dielektrische Schicht (DE-588)4194257-7 s Atomlagenabscheidung (DE-588)7712127-2 s Inversionsschicht (DE-588)4123445-5 s Siliciumhalbleiter (DE-588)4274465-9 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=027774994&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Werner, Florian Atomic layer deposition of aluminum oxide on crystalline silicon fundamental interface properties and application to solar cells Siliciumhalbleiter (DE-588)4274465-9 gnd Dielektrische Schicht (DE-588)4194257-7 gnd Aluminiumoxide (DE-588)4001590-7 gnd Inversionsschicht (DE-588)4123445-5 gnd Atomlagenabscheidung (DE-588)7712127-2 gnd |
| subject_GND | (DE-588)4274465-9 (DE-588)4194257-7 (DE-588)4001590-7 (DE-588)4123445-5 (DE-588)7712127-2 (DE-588)4113937-9 |
| title | Atomic layer deposition of aluminum oxide on crystalline silicon fundamental interface properties and application to solar cells |
| title_auth | Atomic layer deposition of aluminum oxide on crystalline silicon fundamental interface properties and application to solar cells |
| title_exact_search | Atomic layer deposition of aluminum oxide on crystalline silicon fundamental interface properties and application to solar cells |
| title_full | Atomic layer deposition of aluminum oxide on crystalline silicon fundamental interface properties and application to solar cells Florian Werner |
| title_fullStr | Atomic layer deposition of aluminum oxide on crystalline silicon fundamental interface properties and application to solar cells Florian Werner |
| title_full_unstemmed | Atomic layer deposition of aluminum oxide on crystalline silicon fundamental interface properties and application to solar cells Florian Werner |
| title_short | Atomic layer deposition of aluminum oxide on crystalline silicon |
| title_sort | atomic layer deposition of aluminum oxide on crystalline silicon fundamental interface properties and application to solar cells |
| title_sub | fundamental interface properties and application to solar cells |
| topic | Siliciumhalbleiter (DE-588)4274465-9 gnd Dielektrische Schicht (DE-588)4194257-7 gnd Aluminiumoxide (DE-588)4001590-7 gnd Inversionsschicht (DE-588)4123445-5 gnd Atomlagenabscheidung (DE-588)7712127-2 gnd |
| topic_facet | Siliciumhalbleiter Dielektrische Schicht Aluminiumoxide Inversionsschicht Atomlagenabscheidung Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=027774994&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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