Dilute nitride semiconductors:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Amsterdam
Elsevier
2005
|
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | Includes bibliographical references and index * This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. * It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas * Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 æm and 1.55 æm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics * This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. * It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas * Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community |
| Beschreibung: | 1 Online-Ressource (xvii, 630 p.) |
| ISBN: | 9780080445021 0080445020 9780080455990 0080455999 |
Internformat
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV042317070 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 150129s2005 |||| o||u| ||||||eng d | ||
| 020 | |a 9780080445021 |9 978-0-08-044502-1 | ||
| 020 | |a 0080445020 |9 0-08-044502-0 | ||
| 020 | |a 9780080455990 |c electronic bk. |9 978-0-08-045599-0 | ||
| 020 | |a 0080455999 |c electronic bk. |9 0-08-045599-9 | ||
| 035 | |a (ZDB-33-EBS)ocn162568024 | ||
| 035 | |a (OCoLC)162568024 | ||
| 035 | |a (DE-599)BVBBV042317070 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-1046 | ||
| 082 | 0 | |a 621.38152 |2 22 | |
| 100 | 1 | |a Henini, Mohamed |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Dilute nitride semiconductors |c M. Henini |
| 264 | 1 | |a Amsterdam |b Elsevier |c 2005 | |
| 300 | |a 1 Online-Ressource (xvii, 630 p.) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 500 | |a Includes bibliographical references and index | ||
| 500 | |a * This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. * It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas * Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 æm and 1.55 æm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. | ||
| 500 | |a The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. | ||
| 500 | |a Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics * This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. * It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas * Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community | ||
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Solid State |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Semiconductors |2 bisacsh | |
| 650 | 7 | |a Nitrides |2 fast | |
| 650 | 7 | |a Semiconductors / Materials |2 fast | |
| 650 | 4 | |a Semiconductors |x Materials | |
| 650 | 4 | |a Nitrides | |
| 650 | 0 | 7 | |a Epitaxie |0 (DE-588)4152545-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Nitride |0 (DE-588)4171929-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Galliumnitrid |0 (DE-588)4375592-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Elektronenstruktur |0 (DE-588)4129531-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |D s |
| 689 | 0 | 1 | |a Nitride |0 (DE-588)4171929-3 |D s |
| 689 | 0 | 2 | |a Epitaxie |0 (DE-588)4152545-0 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 689 | 1 | 0 | |a Nitride |0 (DE-588)4171929-3 |D s |
| 689 | 1 | 1 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 1 | 2 | |a Epitaxie |0 (DE-588)4152545-0 |D s |
| 689 | 1 | |8 2\p |5 DE-604 | |
| 689 | 2 | 0 | |a Galliumnitrid |0 (DE-588)4375592-6 |D s |
| 689 | 2 | 1 | |a Elektronenstruktur |0 (DE-588)4129531-6 |D s |
| 689 | 2 | |8 3\p |5 DE-604 | |
| 856 | 4 | 0 | |u http://www.sciencedirect.com/science/book/9780080445021 |x Verlag |3 Volltext |
| 912 | |a ZDB-33-ESD |a ZDB-33-EBS | ||
| 940 | 1 | |q FAW_PDA_ESD | |
| 940 | 1 | |q FLA_PDA_ESD | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-027754061 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 2\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 883 | 1 | |8 3\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
Datensatz im Suchindex
| _version_ | 1804152913103159296 |
|---|---|
| any_adam_object | |
| author | Henini, Mohamed |
| author_facet | Henini, Mohamed |
| author_role | aut |
| author_sort | Henini, Mohamed |
| author_variant | m h mh |
| building | Verbundindex |
| bvnumber | BV042317070 |
| collection | ZDB-33-ESD ZDB-33-EBS |
| ctrlnum | (ZDB-33-EBS)ocn162568024 (OCoLC)162568024 (DE-599)BVBBV042317070 |
| dewey-full | 621.38152 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.38152 |
| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>04983nmm a2200721zc 4500</leader><controlfield tag="001">BV042317070</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">150129s2005 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780080445021</subfield><subfield code="9">978-0-08-044502-1</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0080445020</subfield><subfield code="9">0-08-044502-0</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780080455990</subfield><subfield code="c">electronic bk.</subfield><subfield code="9">978-0-08-045599-0</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0080455999</subfield><subfield code="c">electronic bk.</subfield><subfield code="9">0-08-045599-9</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-33-EBS)ocn162568024</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)162568024</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV042317070</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-1046</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.38152</subfield><subfield code="2">22</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Henini, Mohamed</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Dilute nitride semiconductors</subfield><subfield code="c">M. Henini</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Amsterdam</subfield><subfield code="b">Elsevier</subfield><subfield code="c">2005</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (xvii, 630 p.)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and index</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">* This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. * It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas * Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 æm and 1.55 æm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. </subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. </subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics * This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. * It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas * Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Solid State</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Semiconductors</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Nitrides</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconductors / Materials</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Nitrides</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Epitaxie</subfield><subfield code="0">(DE-588)4152545-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Nitride</subfield><subfield code="0">(DE-588)4171929-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Galliumnitrid</subfield><subfield code="0">(DE-588)4375592-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Elektronenstruktur</subfield><subfield code="0">(DE-588)4129531-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Nitride</subfield><subfield code="0">(DE-588)4171929-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Epitaxie</subfield><subfield code="0">(DE-588)4152545-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Nitride</subfield><subfield code="0">(DE-588)4171929-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="2"><subfield code="a">Epitaxie</subfield><subfield code="0">(DE-588)4152545-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Galliumnitrid</subfield><subfield code="0">(DE-588)4375592-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2="1"><subfield code="a">Elektronenstruktur</subfield><subfield code="0">(DE-588)4129531-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="8">3\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://www.sciencedirect.com/science/book/9780080445021</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-33-ESD</subfield><subfield code="a">ZDB-33-EBS</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">FAW_PDA_ESD</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">FLA_PDA_ESD</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-027754061</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">3\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
| id | DE-604.BV042317070 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T01:18:16Z |
| institution | BVB |
| isbn | 9780080445021 0080445020 9780080455990 0080455999 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027754061 |
| oclc_num | 162568024 |
| open_access_boolean | |
| owner | DE-1046 |
| owner_facet | DE-1046 |
| physical | 1 Online-Ressource (xvii, 630 p.) |
| psigel | ZDB-33-ESD ZDB-33-EBS FAW_PDA_ESD FLA_PDA_ESD |
| publishDate | 2005 |
| publishDateSearch | 2005 |
| publishDateSort | 2005 |
| publisher | Elsevier |
| record_format | marc |
| spelling | Henini, Mohamed Verfasser aut Dilute nitride semiconductors M. Henini Amsterdam Elsevier 2005 1 Online-Ressource (xvii, 630 p.) txt rdacontent c rdamedia cr rdacarrier Includes bibliographical references and index * This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. * It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas * Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 æm and 1.55 æm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics * This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. * It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas * Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Nitrides fast Semiconductors / Materials fast Semiconductors Materials Nitrides Epitaxie (DE-588)4152545-0 gnd rswk-swf Nitride (DE-588)4171929-3 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Elektronenstruktur (DE-588)4129531-6 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 s Nitride (DE-588)4171929-3 s Epitaxie (DE-588)4152545-0 s 1\p DE-604 Halbleiter (DE-588)4022993-2 s 2\p DE-604 Galliumnitrid (DE-588)4375592-6 s Elektronenstruktur (DE-588)4129531-6 s 3\p DE-604 http://www.sciencedirect.com/science/book/9780080445021 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Henini, Mohamed Dilute nitride semiconductors TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Nitrides fast Semiconductors / Materials fast Semiconductors Materials Nitrides Epitaxie (DE-588)4152545-0 gnd Nitride (DE-588)4171929-3 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Galliumnitrid (DE-588)4375592-6 gnd Elektronenstruktur (DE-588)4129531-6 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4152545-0 (DE-588)4171929-3 (DE-588)4150649-2 (DE-588)4375592-6 (DE-588)4129531-6 (DE-588)4022993-2 |
| title | Dilute nitride semiconductors |
| title_auth | Dilute nitride semiconductors |
| title_exact_search | Dilute nitride semiconductors |
| title_full | Dilute nitride semiconductors M. Henini |
| title_fullStr | Dilute nitride semiconductors M. Henini |
| title_full_unstemmed | Dilute nitride semiconductors M. Henini |
| title_short | Dilute nitride semiconductors |
| title_sort | dilute nitride semiconductors |
| topic | TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh Nitrides fast Semiconductors / Materials fast Semiconductors Materials Nitrides Epitaxie (DE-588)4152545-0 gnd Nitride (DE-588)4171929-3 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Galliumnitrid (DE-588)4375592-6 gnd Elektronenstruktur (DE-588)4129531-6 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | TECHNOLOGY & ENGINEERING / Electronics / Solid State TECHNOLOGY & ENGINEERING / Electronics / Semiconductors Nitrides Semiconductors / Materials Semiconductors Materials Epitaxie Nitride Drei-Fünf-Halbleiter Galliumnitrid Elektronenstruktur Halbleiter |
| url | http://www.sciencedirect.com/science/book/9780080445021 |
| work_keys_str_mv | AT heninimohamed dilutenitridesemiconductors |