Optoelectronic devices: III-nitrides
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
Amsterdam
Elsevier
2004
|
Schlagworte: | |
Online-Zugang: | Volltext |
Beschreibung: | Includes bibliographical references and index Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides |
Beschreibung: | 1 Online-Ressource (xv, 575 p.) |
ISBN: | 9780080444260 0080444261 |
Internformat
MARC
LEADER | 00000nmm a2200000zc 4500 | ||
---|---|---|---|
001 | BV042317008 | ||
003 | DE-604 | ||
005 | 00000000000000.0 | ||
007 | cr|uuu---uuuuu | ||
008 | 150129s2004 |||| o||u| ||||||eng d | ||
020 | |a 9780080444260 |9 978-0-08-044426-0 | ||
020 | |a 0080444261 |9 0-08-044426-1 | ||
035 | |a (OCoLC)162130034 | ||
035 | |a (DE-599)BVBBV042317008 | ||
040 | |a DE-604 |b ger |e aacr | ||
041 | 0 | |a eng | |
049 | |a DE-1046 | ||
082 | 0 | |a 621.38152 |2 22 | |
100 | 1 | |a Razeghi, M. |e Verfasser |4 aut | |
245 | 1 | 0 | |a Optoelectronic devices |b III-nitrides |c M. Razeghi, M. Henini |
264 | 1 | |a Amsterdam |b Elsevier |c 2004 | |
300 | |a 1 Online-Ressource (xv, 575 p.) | ||
336 | |b txt |2 rdacontent | ||
337 | |b c |2 rdamedia | ||
338 | |b cr |2 rdacarrier | ||
500 | |a Includes bibliographical references and index | ||
500 | |a Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides | ||
650 | 7 | |a Nitrides |2 fast | |
650 | 7 | |a Optoelectronic devices |2 fast | |
650 | 4 | |a Optoelectronic devices | |
650 | 4 | |a Nitrides | |
650 | 0 | 7 | |a Integrierte Optoelektronik |0 (DE-588)4223876-6 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Wide-bandgap Halbleiter |0 (DE-588)4273153-7 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Optoelektronisches Bauelement |0 (DE-588)4043689-5 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a Optoelektronisches Bauelement |0 (DE-588)4043689-5 |D s |
689 | 0 | 1 | |a Integrierte Optoelektronik |0 (DE-588)4223876-6 |D s |
689 | 0 | 2 | |a Wide-bandgap Halbleiter |0 (DE-588)4273153-7 |D s |
689 | 0 | |8 1\p |5 DE-604 | |
700 | 1 | |a Henini, Mohamed |e Sonstige |4 oth | |
856 | 4 | 0 | |u http://www.sciencedirect.com/science/book/9780080444260 |x Verlag |3 Volltext |
912 | |a ZDB-33-ESD |a ZDB-33-EBS | ||
940 | 1 | |q FAW_PDA_ESD | |
940 | 1 | |q FLA_PDA_ESD | |
999 | |a oai:aleph.bib-bvb.de:BVB01-027753999 | ||
883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk |
Datensatz im Suchindex
_version_ | 1804152912985718784 |
---|---|
any_adam_object | |
author | Razeghi, M. |
author_facet | Razeghi, M. |
author_role | aut |
author_sort | Razeghi, M. |
author_variant | m r mr |
building | Verbundindex |
bvnumber | BV042317008 |
collection | ZDB-33-ESD ZDB-33-EBS |
ctrlnum | (OCoLC)162130034 (DE-599)BVBBV042317008 |
dewey-full | 621.38152 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.38152 |
dewey-search | 621.38152 |
dewey-sort | 3621.38152 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Electronic eBook |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02565nmm a2200505zc 4500</leader><controlfield tag="001">BV042317008</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">150129s2004 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780080444260</subfield><subfield code="9">978-0-08-044426-0</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0080444261</subfield><subfield code="9">0-08-044426-1</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)162130034</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV042317008</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-1046</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.38152</subfield><subfield code="2">22</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Razeghi, M.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Optoelectronic devices</subfield><subfield code="b">III-nitrides</subfield><subfield code="c">M. Razeghi, M. Henini</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Amsterdam</subfield><subfield code="b">Elsevier</subfield><subfield code="c">2004</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (xv, 575 p.)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Includes bibliographical references and index</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Nitrides</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Optoelectronic devices</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Optoelectronic devices</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Nitrides</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Integrierte Optoelektronik</subfield><subfield code="0">(DE-588)4223876-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Wide-bandgap Halbleiter</subfield><subfield code="0">(DE-588)4273153-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Optoelektronisches Bauelement</subfield><subfield code="0">(DE-588)4043689-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Optoelektronisches Bauelement</subfield><subfield code="0">(DE-588)4043689-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Integrierte Optoelektronik</subfield><subfield code="0">(DE-588)4223876-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Wide-bandgap Halbleiter</subfield><subfield code="0">(DE-588)4273153-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Henini, Mohamed</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://www.sciencedirect.com/science/book/9780080444260</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-33-ESD</subfield><subfield code="a">ZDB-33-EBS</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">FAW_PDA_ESD</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">FLA_PDA_ESD</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-027753999</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
id | DE-604.BV042317008 |
illustrated | Not Illustrated |
indexdate | 2024-07-10T01:18:15Z |
institution | BVB |
isbn | 9780080444260 0080444261 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027753999 |
oclc_num | 162130034 |
open_access_boolean | |
owner | DE-1046 |
owner_facet | DE-1046 |
physical | 1 Online-Ressource (xv, 575 p.) |
psigel | ZDB-33-ESD ZDB-33-EBS FAW_PDA_ESD FLA_PDA_ESD |
publishDate | 2004 |
publishDateSearch | 2004 |
publishDateSort | 2004 |
publisher | Elsevier |
record_format | marc |
spelling | Razeghi, M. Verfasser aut Optoelectronic devices III-nitrides M. Razeghi, M. Henini Amsterdam Elsevier 2004 1 Online-Ressource (xv, 575 p.) txt rdacontent c rdamedia cr rdacarrier Includes bibliographical references and index Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides Nitrides fast Optoelectronic devices fast Optoelectronic devices Nitrides Integrierte Optoelektronik (DE-588)4223876-6 gnd rswk-swf Wide-bandgap Halbleiter (DE-588)4273153-7 gnd rswk-swf Optoelektronisches Bauelement (DE-588)4043689-5 gnd rswk-swf Optoelektronisches Bauelement (DE-588)4043689-5 s Integrierte Optoelektronik (DE-588)4223876-6 s Wide-bandgap Halbleiter (DE-588)4273153-7 s 1\p DE-604 Henini, Mohamed Sonstige oth http://www.sciencedirect.com/science/book/9780080444260 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Razeghi, M. Optoelectronic devices III-nitrides Nitrides fast Optoelectronic devices fast Optoelectronic devices Nitrides Integrierte Optoelektronik (DE-588)4223876-6 gnd Wide-bandgap Halbleiter (DE-588)4273153-7 gnd Optoelektronisches Bauelement (DE-588)4043689-5 gnd |
subject_GND | (DE-588)4223876-6 (DE-588)4273153-7 (DE-588)4043689-5 |
title | Optoelectronic devices III-nitrides |
title_auth | Optoelectronic devices III-nitrides |
title_exact_search | Optoelectronic devices III-nitrides |
title_full | Optoelectronic devices III-nitrides M. Razeghi, M. Henini |
title_fullStr | Optoelectronic devices III-nitrides M. Razeghi, M. Henini |
title_full_unstemmed | Optoelectronic devices III-nitrides M. Razeghi, M. Henini |
title_short | Optoelectronic devices |
title_sort | optoelectronic devices iii nitrides |
title_sub | III-nitrides |
topic | Nitrides fast Optoelectronic devices fast Optoelectronic devices Nitrides Integrierte Optoelektronik (DE-588)4223876-6 gnd Wide-bandgap Halbleiter (DE-588)4273153-7 gnd Optoelektronisches Bauelement (DE-588)4043689-5 gnd |
topic_facet | Nitrides Optoelectronic devices Integrierte Optoelektronik Wide-bandgap Halbleiter Optoelektronisches Bauelement |
url | http://www.sciencedirect.com/science/book/9780080444260 |
work_keys_str_mv | AT razeghim optoelectronicdevicesiiinitrides AT heninimohamed optoelectronicdevicesiiinitrides |