Ionized physical vapor deposition:
Gespeichert in:
Format: | Elektronisch E-Book |
---|---|
Sprache: | English |
Veröffentlicht: |
San Diego
Academic Press
c2000
|
Schriftenreihe: | Thin films (San Diego, Calif.)
v. 27 |
Schlagworte: | |
Online-Zugang: | Volltext |
Beschreibung: | This volume provides the first comprehensive look at a pivotal new technology in integrated circuit fabrication. For some time researchers have sought alternate processes for interconnecting the millions of transistors on each chip because conventional physical vapor deposition can no longer meet the specifications of today's complex integrated circuits. Out of this research, ionized physical vapor deposition has emerged as a premier technology for the deposition of thin metal films that form the dense interconnect wiring on state-of-the-art microprocessors and memory chips. For the first time, the most recent developments in thin film deposition using ionized physical vapor deposition (I-PVD) are presented in a single coherent source. Readers will find detailed descriptions of relevant plasma source technology, specific deposition systems, and process recipes. The tools and processes covered include DC hollow cathode magnetrons, RF inductively coupled plasmas, and microwave plasmas that are used for depositing technologically important materials such as copper, tantalum, titanium, TiN, and aluminum. In addition, this volume describes the important physical processes that occur in I-PVD in a simple and concise way. The physical descriptions are followed by experimentally-verified numerical models that provide in-depth insight into the design and operation I-PVD tools. Practicing process engineers, research and development scientists, and students will find that this book's integration of tool design, process development, and fundamental physical models make it an indispensable reference. Key Features: The first comprehensive volume on ionized physical vapor deposition Combines tool design, process development, and fundamental physical understanding to form a complete picture of I-PVD Emphasizes practical applications in the area of IC fabrication and interconnect technology Serves as a guide to select the most appropriate technology for any deposition application *This single source saves time and effort by including comprehensive information at one's finger tips *The integration of tool design, process development, and fundamental physics allows the reader to quickly understand all of the issues important to I-PVD *The numerous practical applications assist the working engineer to select and refine thin film processes Includes bibliographical references and indexes |
Beschreibung: | 1 Online-Ressource (xii, 253 p.) |
ISBN: | 9780125330275 0125330278 |
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500 | |a This volume provides the first comprehensive look at a pivotal new technology in integrated circuit fabrication. For some time researchers have sought alternate processes for interconnecting the millions of transistors on each chip because conventional physical vapor deposition can no longer meet the specifications of today's complex integrated circuits. Out of this research, ionized physical vapor deposition has emerged as a premier technology for the deposition of thin metal films that form the dense interconnect wiring on state-of-the-art microprocessors and memory chips. For the first time, the most recent developments in thin film deposition using ionized physical vapor deposition (I-PVD) are presented in a single coherent source. Readers will find detailed descriptions of relevant plasma source technology, specific deposition systems, and process recipes. | ||
500 | |a The tools and processes covered include DC hollow cathode magnetrons, RF inductively coupled plasmas, and microwave plasmas that are used for depositing technologically important materials such as copper, tantalum, titanium, TiN, and aluminum. In addition, this volume describes the important physical processes that occur in I-PVD in a simple and concise way. The physical descriptions are followed by experimentally-verified numerical models that provide in-depth insight into the design and operation I-PVD tools. Practicing process engineers, research and development scientists, and students will find that this book's integration of tool design, process development, and fundamental physical models make it an indispensable reference. | ||
500 | |a Key Features: The first comprehensive volume on ionized physical vapor deposition Combines tool design, process development, and fundamental physical understanding to form a complete picture of I-PVD Emphasizes practical applications in the area of IC fabrication and interconnect technology Serves as a guide to select the most appropriate technology for any deposition application *This single source saves time and effort by including comprehensive information at one's finger tips *The integration of tool design, process development, and fundamental physics allows the reader to quickly understand all of the issues important to I-PVD *The numerous practical applications assist the working engineer to select and refine thin film processes | ||
500 | |a Includes bibliographical references and indexes | ||
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spelling | Ionized physical vapor deposition edited by Jeffrey A. Hopwood San Diego Academic Press c2000 1 Online-Ressource (xii, 253 p.) txt rdacontent c rdamedia cr rdacarrier Thin films (San Diego, Calif.) v. 27 This volume provides the first comprehensive look at a pivotal new technology in integrated circuit fabrication. For some time researchers have sought alternate processes for interconnecting the millions of transistors on each chip because conventional physical vapor deposition can no longer meet the specifications of today's complex integrated circuits. Out of this research, ionized physical vapor deposition has emerged as a premier technology for the deposition of thin metal films that form the dense interconnect wiring on state-of-the-art microprocessors and memory chips. For the first time, the most recent developments in thin film deposition using ionized physical vapor deposition (I-PVD) are presented in a single coherent source. Readers will find detailed descriptions of relevant plasma source technology, specific deposition systems, and process recipes. The tools and processes covered include DC hollow cathode magnetrons, RF inductively coupled plasmas, and microwave plasmas that are used for depositing technologically important materials such as copper, tantalum, titanium, TiN, and aluminum. In addition, this volume describes the important physical processes that occur in I-PVD in a simple and concise way. The physical descriptions are followed by experimentally-verified numerical models that provide in-depth insight into the design and operation I-PVD tools. Practicing process engineers, research and development scientists, and students will find that this book's integration of tool design, process development, and fundamental physical models make it an indispensable reference. Key Features: The first comprehensive volume on ionized physical vapor deposition Combines tool design, process development, and fundamental physical understanding to form a complete picture of I-PVD Emphasizes practical applications in the area of IC fabrication and interconnect technology Serves as a guide to select the most appropriate technology for any deposition application *This single source saves time and effort by including comprehensive information at one's finger tips *The integration of tool design, process development, and fundamental physics allows the reader to quickly understand all of the issues important to I-PVD *The numerous practical applications assist the working engineer to select and refine thin film processes Includes bibliographical references and indexes Thin film devices Design and construction Physical vapor deposition Thin films PVD-Verfahren (DE-588)4115673-0 gnd rswk-swf Electronic books 1\p (DE-588)4143413-4 Aufsatzsammlung gnd-content PVD-Verfahren (DE-588)4115673-0 s 2\p DE-604 Hopwood, Jeffrey A. Sonstige oth http://www.sciencedirect.com/science/book/9780125330275 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Ionized physical vapor deposition Thin film devices Design and construction Physical vapor deposition Thin films PVD-Verfahren (DE-588)4115673-0 gnd |
subject_GND | (DE-588)4115673-0 (DE-588)4143413-4 |
title | Ionized physical vapor deposition |
title_auth | Ionized physical vapor deposition |
title_exact_search | Ionized physical vapor deposition |
title_full | Ionized physical vapor deposition edited by Jeffrey A. Hopwood |
title_fullStr | Ionized physical vapor deposition edited by Jeffrey A. Hopwood |
title_full_unstemmed | Ionized physical vapor deposition edited by Jeffrey A. Hopwood |
title_short | Ionized physical vapor deposition |
title_sort | ionized physical vapor deposition |
topic | Thin film devices Design and construction Physical vapor deposition Thin films PVD-Verfahren (DE-588)4115673-0 gnd |
topic_facet | Thin film devices Design and construction Physical vapor deposition Thin films PVD-Verfahren Aufsatzsammlung |
url | http://www.sciencedirect.com/science/book/9780125330275 |
work_keys_str_mv | AT hopwoodjeffreya ionizedphysicalvapordeposition |