Organometallic vapor phase epitaxy: theory and practice
Gespeichert in:
1. Verfasser: | |
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Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
Boston
Academic Press
c1989
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Schlagworte: | |
Online-Zugang: | FAW01 Volltext |
Beschreibung: | Includes bibliographies and index Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport |
Beschreibung: | 1 Online-Ressource (xviii, 398 p.) |
ISBN: | 0126738408 9780126738407 |
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500 | |a Includes bibliographies and index | ||
500 | |a Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport | ||
650 | 4 | |a Épitaxie | |
650 | 4 | |a Composés semiconducteurs | |
650 | 7 | |a Metallorganische Verbindungen |2 swd | |
650 | 7 | |a Gasphasenepitaxie |2 swd | |
650 | 7 | |a Compound semiconductors |2 fast | |
650 | 7 | |a Metal organic chemical vapor deposition |2 fast | |
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Datensatz im Suchindex
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any_adam_object | |
author | Stringfellow, G. B., (Gerald B.) |
author_facet | Stringfellow, G. B., (Gerald B.) |
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author_sort | Stringfellow, G. B., (Gerald B.) |
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building | Verbundindex |
bvnumber | BV042312506 |
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dewey-full | 537.6/22 |
dewey-hundreds | 500 - Natural sciences and mathematics |
dewey-ones | 537 - Electricity and electronics |
dewey-raw | 537.6/22 |
dewey-search | 537.6/22 |
dewey-sort | 3537.6 222 |
dewey-tens | 530 - Physics |
discipline | Physik |
format | Electronic eBook |
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id | DE-604.BV042312506 |
illustrated | Not Illustrated |
indexdate | 2024-07-10T01:18:06Z |
institution | BVB |
isbn | 0126738408 9780126738407 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027749497 |
oclc_num | 838125855 |
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owner | DE-1046 |
owner_facet | DE-1046 |
physical | 1 Online-Ressource (xviii, 398 p.) |
psigel | ZDB-33-ESD ZDB-33-ESD FAW_PDA_ESD |
publishDate | 1989 |
publishDateSearch | 1989 |
publishDateSort | 1989 |
publisher | Academic Press |
record_format | marc |
spelling | Stringfellow, G. B., (Gerald B.) Verfasser aut Organometallic vapor phase epitaxy theory and practice Gerald B. Stringfellow Boston Academic Press c1989 1 Online-Ressource (xviii, 398 p.) txt rdacontent c rdamedia cr rdacarrier Includes bibliographies and index Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport Épitaxie Composés semiconducteurs Metallorganische Verbindungen swd Gasphasenepitaxie swd Compound semiconductors fast Metal organic chemical vapor deposition fast Compound semiconductors Metal organic chemical vapor deposition Gasphasenepitaxie (DE-588)4156040-1 gnd rswk-swf Metallorganische Verbindungen (DE-588)4038906-6 gnd rswk-swf Metallorganische Verbindungen (DE-588)4038906-6 s Gasphasenepitaxie (DE-588)4156040-1 s 1\p DE-604 http://www.sciencedirect.com/science/book/9780126738407 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Stringfellow, G. B., (Gerald B.) Organometallic vapor phase epitaxy theory and practice Épitaxie Composés semiconducteurs Metallorganische Verbindungen swd Gasphasenepitaxie swd Compound semiconductors fast Metal organic chemical vapor deposition fast Compound semiconductors Metal organic chemical vapor deposition Gasphasenepitaxie (DE-588)4156040-1 gnd Metallorganische Verbindungen (DE-588)4038906-6 gnd |
subject_GND | (DE-588)4156040-1 (DE-588)4038906-6 |
title | Organometallic vapor phase epitaxy theory and practice |
title_auth | Organometallic vapor phase epitaxy theory and practice |
title_exact_search | Organometallic vapor phase epitaxy theory and practice |
title_full | Organometallic vapor phase epitaxy theory and practice Gerald B. Stringfellow |
title_fullStr | Organometallic vapor phase epitaxy theory and practice Gerald B. Stringfellow |
title_full_unstemmed | Organometallic vapor phase epitaxy theory and practice Gerald B. Stringfellow |
title_short | Organometallic vapor phase epitaxy |
title_sort | organometallic vapor phase epitaxy theory and practice |
title_sub | theory and practice |
topic | Épitaxie Composés semiconducteurs Metallorganische Verbindungen swd Gasphasenepitaxie swd Compound semiconductors fast Metal organic chemical vapor deposition fast Compound semiconductors Metal organic chemical vapor deposition Gasphasenepitaxie (DE-588)4156040-1 gnd Metallorganische Verbindungen (DE-588)4038906-6 gnd |
topic_facet | Épitaxie Composés semiconducteurs Metallorganische Verbindungen Gasphasenepitaxie Compound semiconductors Metal organic chemical vapor deposition |
url | http://www.sciencedirect.com/science/book/9780126738407 |
work_keys_str_mv | AT stringfellowgbgeraldb organometallicvaporphaseepitaxytheoryandpractice |