Hydrogen in semiconductors: bulk and surface properties : proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 27-31 August 1990
Gespeichert in:
| Körperschaft: | |
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| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Amsterdam, the Netherlands
North Holland
1991
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| Schlagworte: | |
| Online-Zugang: | FAW01 Volltext |
| Beschreibung: | "Reprinted from Physica B, volume 170"--Page [iv] Includes bibliographical references and indexes Hydrogen on semiconductor surfaces has been an area of considerable activity over the last two decades. Structural, thermal, and dynamical properties of hydrogen chemisorbed on crystalline silicon and other semiconductors have been studied in great detail. These properties serve as a reference for related, but more complex systems such as hydrogen at multiple vacancies in crystalline semiconductors or at microvoids in amorphous samples. Interesting from a surface physics point of view is the fact that hydrogen as a monovalent element is an ideal terminator for unsaturated bonds on surfaces and therefore tends to have a large influence on surface reconstruction. A related phenomenon with large technological impact (for example in low cost solar cells) is the passivation of grain boundaries in microcrystalline semiconductors. Finally, hydrogenated semiconductor surfaces always appear as a boundary layer during low-energy hydrogenation of bulk semiconductors, so that a complete description of hydrogen uptake or desorption necessarily has to take these surfaces into account. This collection of invited and contributed papers has been carefully balanced to deal with amorphous and crystalline semiconductors and surfaces and presents basic and experimental work (basic and applied) as well as theory. The resulting volume presents a summary of the state-of-the-art in the field of hydrogen in semiconductors and will hopefully stimulate future work in this area |
| Beschreibung: | 1 Online-Ressource (xvii, 581 pages) |
| ISBN: | 0444598839 0444891382 9780444598837 9780444891389 |
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| 245 | 1 | 0 | |a Hydrogen in semiconductors |b bulk and surface properties : proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 27-31 August 1990 |c editors, M. Stutzmann, J. Chevallier |
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| 500 | |a Hydrogen on semiconductor surfaces has been an area of considerable activity over the last two decades. Structural, thermal, and dynamical properties of hydrogen chemisorbed on crystalline silicon and other semiconductors have been studied in great detail. These properties serve as a reference for related, but more complex systems such as hydrogen at multiple vacancies in crystalline semiconductors or at microvoids in amorphous samples. Interesting from a surface physics point of view is the fact that hydrogen as a monovalent element is an ideal terminator for unsaturated bonds on surfaces and therefore tends to have a large influence on surface reconstruction. A related phenomenon with large technological impact (for example in low cost solar cells) is the passivation of grain boundaries in microcrystalline semiconductors. Finally, hydrogenated semiconductor surfaces always appear as a boundary layer during low-energy hydrogenation of bulk semiconductors, so that a complete description of hydrogen uptake or desorption necessarily has to take these surfaces into account. This collection of invited and contributed papers has been carefully balanced to deal with amorphous and crystalline semiconductors and surfaces and presents basic and experimental work (basic and applied) as well as theory. The resulting volume presents a summary of the state-of-the-art in the field of hydrogen in semiconductors and will hopefully stimulate future work in this area | ||
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| spelling | Trieste ICTP-IUPAP Semiconductor Symposium < 1990> Verfasser aut Hydrogen in semiconductors bulk and surface properties : proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 27-31 August 1990 editors, M. Stutzmann, J. Chevallier Amsterdam, the Netherlands North Holland 1991 1 Online-Ressource (xvii, 581 pages) txt rdacontent c rdamedia cr rdacarrier "Reprinted from Physica B, volume 170"--Page [iv] Includes bibliographical references and indexes Hydrogen on semiconductor surfaces has been an area of considerable activity over the last two decades. Structural, thermal, and dynamical properties of hydrogen chemisorbed on crystalline silicon and other semiconductors have been studied in great detail. These properties serve as a reference for related, but more complex systems such as hydrogen at multiple vacancies in crystalline semiconductors or at microvoids in amorphous samples. Interesting from a surface physics point of view is the fact that hydrogen as a monovalent element is an ideal terminator for unsaturated bonds on surfaces and therefore tends to have a large influence on surface reconstruction. A related phenomenon with large technological impact (for example in low cost solar cells) is the passivation of grain boundaries in microcrystalline semiconductors. Finally, hydrogenated semiconductor surfaces always appear as a boundary layer during low-energy hydrogenation of bulk semiconductors, so that a complete description of hydrogen uptake or desorption necessarily has to take these surfaces into account. This collection of invited and contributed papers has been carefully balanced to deal with amorphous and crystalline semiconductors and surfaces and presents basic and experimental work (basic and applied) as well as theory. The resulting volume presents a summary of the state-of-the-art in the field of hydrogen in semiconductors and will hopefully stimulate future work in this area Conference proceedings fast Triest (1990) swd Semiconducteurs / Congrès Semiconducteurs / Défauts / Congrès Hydrogène / Congrès SCIENCE / Physics / Electricity bisacsh SCIENCE / Physics / Electromagnetism bisacsh Hydrogen fast Semiconductors fast Semiconductors / Defects fast Halbleiter swd Kongress swd Wasserstoff swd Semiconductors Congresses Semiconductors Defects Congresses Hydrogen Congresses Halbleiter (DE-588)4022993-2 gnd rswk-swf Wasserstoff (DE-588)4064784-5 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Halbleiter (DE-588)4022993-2 s Wasserstoff (DE-588)4064784-5 s 1\p DE-604 Stutzmann, M. Sonstige oth Chevallier, J. Sonstige oth http://www.sciencedirect.com/science/book/9780444891389 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Hydrogen in semiconductors bulk and surface properties : proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 27-31 August 1990 Conference proceedings fast Triest (1990) swd Semiconducteurs / Congrès Semiconducteurs / Défauts / Congrès Hydrogène / Congrès SCIENCE / Physics / Electricity bisacsh SCIENCE / Physics / Electromagnetism bisacsh Hydrogen fast Semiconductors fast Semiconductors / Defects fast Halbleiter swd Kongress swd Wasserstoff swd Semiconductors Congresses Semiconductors Defects Congresses Hydrogen Congresses Halbleiter (DE-588)4022993-2 gnd Wasserstoff (DE-588)4064784-5 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4064784-5 (DE-588)1071861417 |
| title | Hydrogen in semiconductors bulk and surface properties : proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 27-31 August 1990 |
| title_auth | Hydrogen in semiconductors bulk and surface properties : proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 27-31 August 1990 |
| title_exact_search | Hydrogen in semiconductors bulk and surface properties : proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 27-31 August 1990 |
| title_full | Hydrogen in semiconductors bulk and surface properties : proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 27-31 August 1990 editors, M. Stutzmann, J. Chevallier |
| title_fullStr | Hydrogen in semiconductors bulk and surface properties : proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 27-31 August 1990 editors, M. Stutzmann, J. Chevallier |
| title_full_unstemmed | Hydrogen in semiconductors bulk and surface properties : proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 27-31 August 1990 editors, M. Stutzmann, J. Chevallier |
| title_short | Hydrogen in semiconductors |
| title_sort | hydrogen in semiconductors bulk and surface properties proceedings of the sixth trieste iupap ictp semiconductor symposium international centre for theoretical physics trieste italy 27 31 august 1990 |
| title_sub | bulk and surface properties : proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 27-31 August 1990 |
| topic | Conference proceedings fast Triest (1990) swd Semiconducteurs / Congrès Semiconducteurs / Défauts / Congrès Hydrogène / Congrès SCIENCE / Physics / Electricity bisacsh SCIENCE / Physics / Electromagnetism bisacsh Hydrogen fast Semiconductors fast Semiconductors / Defects fast Halbleiter swd Kongress swd Wasserstoff swd Semiconductors Congresses Semiconductors Defects Congresses Hydrogen Congresses Halbleiter (DE-588)4022993-2 gnd Wasserstoff (DE-588)4064784-5 gnd |
| topic_facet | Conference proceedings Triest (1990) Semiconducteurs / Congrès Semiconducteurs / Défauts / Congrès Hydrogène / Congrès SCIENCE / Physics / Electricity SCIENCE / Physics / Electromagnetism Hydrogen Semiconductors Semiconductors / Defects Halbleiter Kongress Wasserstoff Semiconductors Congresses Semiconductors Defects Congresses Hydrogen Congresses Konferenzschrift |
| url | http://www.sciencedirect.com/science/book/9780444891389 |
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