C, H, N and O in Si and Characterization and Simulation of Materials and Processes: Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995
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| Corporate Author: | |
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| Format: | Electronic eBook |
| Language: | English |
| Published: |
Oxford
Elsevier Science
1996
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| Series: | European Materials Research Society symposia proceedings
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| Subjects: | |
| Online Access: | FAW01 Volltext |
| Item Description: | 2. Experimental procedure Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which |
| Physical Description: | 1 Online-Ressource (580 pages) |
| ISBN: | 044459633X 9780444596338 |
Staff View
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV042310865 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 150129s1996 |||| o||u| ||||||eng d | ||
| 020 | |a 044459633X |c electronic bk. |9 0-444-59633-X | ||
| 020 | |a 9780444596338 |c electronic bk. |9 978-0-444-59633-8 | ||
| 035 | |a (OCoLC)829460381 | ||
| 035 | |a (DE-599)BVBBV042310865 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-1046 | ||
| 082 | 0 | |a 621.38152011 | |
| 110 | 2 | |a Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors <1995, Strasbourg, France> |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a C, H, N and O in Si and Characterization and Simulation of Materials and Processes |b Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995 |c edited by A. Borghesi [and others] |
| 264 | 1 | |a Oxford |b Elsevier Science |c 1996 | |
| 300 | |a 1 Online-Ressource (580 pages) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a European Materials Research Society symposia proceedings | |
| 500 | |a 2. Experimental procedure | ||
| 500 | |a Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which | ||
| 650 | 7 | |a Conference proceedings |2 fast | |
| 650 | 4 | |a Compound semiconductors | |
| 650 | 4 | |a Compound semiconductors / Congresses | |
| 650 | 4 | |a Compound semiconductors / Industrial applications / Congresses | |
| 650 | 4 | |a Congreses | |
| 650 | 4 | |a Congresses | |
| 650 | 4 | |a Mathematical models | |
| 650 | 4 | |a Nanostructure materials | |
| 650 | 4 | |a Semiconductors / Design and construction / Congresses | |
| 650 | 4 | |a Semiconductors / Mathematical models / Congresses | |
| 650 | 4 | |a Semiconductors / Simulation methods / Congresses | |
| 650 | 4 | |a Silicon crystals | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Semiconductors |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING / Electronics / Solid State |2 bisacsh | |
| 650 | 7 | |a Semiconductors |2 fast | |
| 650 | 7 | |a Semiconductors / Defects |2 fast | |
| 650 | 7 | |a Silicon |2 fast | |
| 650 | 4 | |a Mathematisches Modell | |
| 650 | 4 | |a Semiconductors |v Congresses | |
| 650 | 4 | |a Silicon |v Congresses | |
| 650 | 4 | |a Semiconductors |x Defects |v Congresses | |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |2 gnd-content | |
| 700 | 1 | |a Borghesi, A. |e Sonstige |4 oth | |
| 710 | 2 | |a Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes <1995, Strasbourg, France> |e Sonstige |4 oth | |
| 856 | 4 | 0 | |u http://www.sciencedirect.com/science/book/9780444824134 |x Verlag |3 Volltext |
| 912 | |a ZDB-33-ESD | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-027747857 | ||
| 966 | e | |u http://www.sciencedirect.com/science/book/9780444824134 |l FAW01 |p ZDB-33-ESD |q FAW_PDA_ESD |x Verlag |3 Volltext | |
Record in the Search Index
| _version_ | 1804152900064116736 |
|---|---|
| any_adam_object | |
| author_corporate | Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors <1995, Strasbourg, France> |
| author_corporate_role | aut |
| author_facet | Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors <1995, Strasbourg, France> |
| author_sort | Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors <1995, Strasbourg, France> |
| building | Verbundindex |
| bvnumber | BV042310865 |
| collection | ZDB-33-ESD |
| ctrlnum | (OCoLC)829460381 (DE-599)BVBBV042310865 |
| dewey-full | 621.38152011 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.38152011 |
| dewey-search | 621.38152011 |
| dewey-sort | 3621.38152011 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03380nmm a2200637zc 4500</leader><controlfield tag="001">BV042310865</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">150129s1996 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">044459633X</subfield><subfield code="c">electronic bk.</subfield><subfield code="9">0-444-59633-X</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780444596338</subfield><subfield code="c">electronic bk.</subfield><subfield code="9">978-0-444-59633-8</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)829460381</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV042310865</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-1046</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.38152011</subfield></datafield><datafield tag="110" ind1="2" ind2=" "><subfield code="a">Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors <1995, Strasbourg, France></subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">C, H, N and O in Si and Characterization and Simulation of Materials and Processes</subfield><subfield code="b">Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995</subfield><subfield code="c">edited by A. Borghesi [and others]</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Oxford</subfield><subfield code="b">Elsevier Science</subfield><subfield code="c">1996</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (580 pages)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">European Materials Research Society symposia proceedings</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">2. Experimental procedure</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Conference proceedings</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Compound semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Compound semiconductors / Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Compound semiconductors / Industrial applications / Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Congreses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Mathematical models</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Nanostructure materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors / Design and construction / Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors / Mathematical models / Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors / Simulation methods / Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon crystals</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Semiconductors</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">TECHNOLOGY & ENGINEERING / Electronics / Solid State</subfield><subfield code="2">bisacsh</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconductors</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconductors / Defects</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Silicon</subfield><subfield code="2">fast</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Mathematisches Modell</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Defects</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Borghesi, A.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="710" ind1="2" ind2=" "><subfield code="a">Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes <1995, Strasbourg, France></subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">http://www.sciencedirect.com/science/book/9780444824134</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-33-ESD</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-027747857</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">http://www.sciencedirect.com/science/book/9780444824134</subfield><subfield code="l">FAW01</subfield><subfield code="p">ZDB-33-ESD</subfield><subfield code="q">FAW_PDA_ESD</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| genre | (DE-588)1071861417 Konferenzschrift gnd-content |
| genre_facet | Konferenzschrift |
| id | DE-604.BV042310865 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T01:18:03Z |
| institution | BVB |
| isbn | 044459633X 9780444596338 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027747857 |
| oclc_num | 829460381 |
| open_access_boolean | |
| owner | DE-1046 |
| owner_facet | DE-1046 |
| physical | 1 Online-Ressource (580 pages) |
| psigel | ZDB-33-ESD ZDB-33-ESD FAW_PDA_ESD |
| publishDate | 1996 |
| publishDateSearch | 1996 |
| publishDateSort | 1996 |
| publisher | Elsevier Science |
| record_format | marc |
| series2 | European Materials Research Society symposia proceedings |
| spelling | Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors <1995, Strasbourg, France> Verfasser aut C, H, N and O in Si and Characterization and Simulation of Materials and Processes Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995 edited by A. Borghesi [and others] Oxford Elsevier Science 1996 1 Online-Ressource (580 pages) txt rdacontent c rdamedia cr rdacarrier European Materials Research Society symposia proceedings 2. Experimental procedure Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which Conference proceedings fast Compound semiconductors Compound semiconductors / Congresses Compound semiconductors / Industrial applications / Congresses Congreses Congresses Mathematical models Nanostructure materials Semiconductors / Design and construction / Congresses Semiconductors / Mathematical models / Congresses Semiconductors / Simulation methods / Congresses Silicon crystals TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh Semiconductors fast Semiconductors / Defects fast Silicon fast Mathematisches Modell Semiconductors Congresses Silicon Congresses Semiconductors Defects Congresses (DE-588)1071861417 Konferenzschrift gnd-content Borghesi, A. Sonstige oth Symposium G on Atomic Scale Characterization and Simulation of Materials and Processes <1995, Strasbourg, France> Sonstige oth http://www.sciencedirect.com/science/book/9780444824134 Verlag Volltext |
| spellingShingle | C, H, N and O in Si and Characterization and Simulation of Materials and Processes Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995 Conference proceedings fast Compound semiconductors Compound semiconductors / Congresses Compound semiconductors / Industrial applications / Congresses Congreses Congresses Mathematical models Nanostructure materials Semiconductors / Design and construction / Congresses Semiconductors / Mathematical models / Congresses Semiconductors / Simulation methods / Congresses Silicon crystals TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh Semiconductors fast Semiconductors / Defects fast Silicon fast Mathematisches Modell Semiconductors Congresses Silicon Congresses Semiconductors Defects Congresses |
| subject_GND | (DE-588)1071861417 |
| title | C, H, N and O in Si and Characterization and Simulation of Materials and Processes Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995 |
| title_auth | C, H, N and O in Si and Characterization and Simulation of Materials and Processes Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995 |
| title_exact_search | C, H, N and O in Si and Characterization and Simulation of Materials and Processes Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995 |
| title_full | C, H, N and O in Si and Characterization and Simulation of Materials and Processes Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995 edited by A. Borghesi [and others] |
| title_fullStr | C, H, N and O in Si and Characterization and Simulation of Materials and Processes Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995 edited by A. Borghesi [and others] |
| title_full_unstemmed | C, H, N and O in Si and Characterization and Simulation of Materials and Processes Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995 edited by A. Borghesi [and others] |
| title_short | C, H, N and O in Si and Characterization and Simulation of Materials and Processes |
| title_sort | c h n and o in si and characterization and simulation of materials and processes proceedings of symposium n and symposium g of the 1995 e mrs spring conference held in strasbourg france 22 26 may 1995 |
| title_sub | Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995 |
| topic | Conference proceedings fast Compound semiconductors Compound semiconductors / Congresses Compound semiconductors / Industrial applications / Congresses Congreses Congresses Mathematical models Nanostructure materials Semiconductors / Design and construction / Congresses Semiconductors / Mathematical models / Congresses Semiconductors / Simulation methods / Congresses Silicon crystals TECHNOLOGY & ENGINEERING / Electronics / Semiconductors bisacsh TECHNOLOGY & ENGINEERING / Electronics / Solid State bisacsh Semiconductors fast Semiconductors / Defects fast Silicon fast Mathematisches Modell Semiconductors Congresses Silicon Congresses Semiconductors Defects Congresses |
| topic_facet | Conference proceedings Compound semiconductors Compound semiconductors / Congresses Compound semiconductors / Industrial applications / Congresses Congreses Congresses Mathematical models Nanostructure materials Semiconductors / Design and construction / Congresses Semiconductors / Mathematical models / Congresses Semiconductors / Simulation methods / Congresses Silicon crystals TECHNOLOGY & ENGINEERING / Electronics / Semiconductors TECHNOLOGY & ENGINEERING / Electronics / Solid State Semiconductors Semiconductors / Defects Silicon Mathematisches Modell Semiconductors Congresses Silicon Congresses Semiconductors Defects Congresses Konferenzschrift |
| url | http://www.sciencedirect.com/science/book/9780444824134 |
| work_keys_str_mv | AT symposiumnoncarbonhydrogennitrogenandoxygeninsiliconandotherelementalsemiconductors1995strasbourgfrance chnandoinsiandcharacterizationandsimulationofmaterialsandprocessesproceedingsofsymposiumnandsymposiumgofthe1995emrsspringconferenceheldinstrasbourgfrance2226may1995 AT borghesia chnandoinsiandcharacterizationandsimulationofmaterialsandprocessesproceedingsofsymposiumnandsymposiumgofthe1995emrsspringconferenceheldinstrasbourgfrance2226may1995 AT symposiumgonatomicscalecharacterizationandsimulationofmaterialsandprocesses1995strasbourgfrance chnandoinsiandcharacterizationandsimulationofmaterialsandprocessesproceedingsofsymposiumnandsymposiumgofthe1995emrsspringconferenceheldinstrasbourgfrance2226may1995 |