C, H, N and O in Si and Characterization and Simulation of Materials and Processes: Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995
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Körperschaft: Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors <1995, Strasbourg, France> (VerfasserIn)
Format: Elektronisch E-Book
Sprache:English
Veröffentlicht: Oxford Elsevier Science 1996
Schriftenreihe:European Materials Research Society symposia proceedings
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Beschreibung:2. Experimental procedure
Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which
Beschreibung:1 Online-Ressource (580 pages)
ISBN:044459633X
9780444596338

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