Symposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors <1995, Strasbourg, France>. (1996). C, H, N and O in Si and Characterization and Simulation of Materials and Processes: Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995. Elsevier Science.
Chicago Style (17th ed.) CitationSymposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors <1995, Strasbourg, France>. C, H, N and O in Si and Characterization and Simulation of Materials and Processes: Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995. Oxford: Elsevier Science, 1996.
MLA (9th ed.) CitationSymposium N on Carbon, Hydrogen, Nitrogen, and Oxygen in Silicon and Other Elemental Semiconductors <1995, Strasbourg, France>. C, H, N and O in Si and Characterization and Simulation of Materials and Processes: Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring Conference, Held in Strasbourg, France, 22-26 May 1995. Elsevier Science, 1996.