X-Ray absorption spectroscopy of semiconductors:
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2015
|
| Schriftenreihe: | Springer Series in Optical Sciences
190 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XVI, 361 S. Ill., graph. Darst. |
| ISBN: | 3662443619 9783662443613 |
Internformat
MARC
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| 245 | 1 | 0 | |a X-Ray absorption spectroscopy of semiconductors |c Claudia S. Schnohr ... eds |
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| adam_text | CONTENTS
1 INTRODUCTION TO X-RAY ABSORPTION SPECTROSCOPY 1
CLAUDIA S. SCHNOHR AND MARK C. RIDGWAY
1.1 BASIC PRINCIPLE 1
1.1.1 X-RAY ABSORPTION 1
1.1.2 ABSORPTION FINE STRUCTURE 2
1.2 THEORETICAL DESCRIPTION 4
1.2.1 DIPOLE APPROXIMATION 4
1.2.2 QUASI-PARTICLE MODEL 5
1.2.3 MULTIPLE SCATTERING APPROACH 6
1.2.4 XANES 7
1.2.5 EXAFS 8
1.3 EXPERIMENTAL ASPECTS 12
1.3.1 SYNCHROTRON RADIATION 12
1.3.2 EXPERIMENTAL SETUP 13
1.4 DATA ANALYSIS 17
1.4.1 XANES 17
1.4.2 EXAFS 20
1.5 CONCLUSIONS 26
REFERENCES 26
PART I CRYSTALLINE SEMICONDUCTORS
2 BINARY AND TERNARY RANDOM ALLOYS 29
CLAUDIA S. SCHNOHR
2.1 INTRODUCTION 29
2.2 SI|_.
V
GE
X
BINARY ALLOYS 31
2.2.1 FIRST SHELL 31
2.2.2 HIGHER SHELLS 32
2.3 III*V
AND II-VI TERNARY ALLOYS 33
2.3.1 FIRST SHELL 33
VII
HTTP://D-NB.INFO/1053175213
VIII CONTENTS
2.3.2 HIGHER SHELLS 35
2.3.3 BOND ANGLES 38
2.4 FIRST SHELL CALCULATIONS 38
2.4.1 MODELS FOR THE DILUTE LIMIT 38
2.4.2 MODELS FOR THE WHOLE COMPOSITIONAL RANGE 39
2.4.3 CLUSTER AND SUPERCELL CALCULATIONS 42
2.4.4 COMPARISON OF THE DIFFERENT MODELS 42
2.5 MODELLING OF HIGHER SHELLS 43
2.6 CONCLUSIONS 45
REFERENCES 46
3 WIDE BAND GAP MATERIALS 49
MARIA KATSIKINI
3.1 INTRODUCTION 49
3.2 XANES CHARACTERIZATION 54
3.2.1 POLARIZATION DEPENDENT MEASUREMENTS 54
3.2.2 POLYMORPHISM AND MULTIPHASE MATERIALS 59
3.2.3 CORE EXCITON IN DIAMOND 62
3.2.4 ION IMPLANTATION AND DEFECTS 63
3.2.5 NEAR EDGE SPECTRA SIMULATIONS
66
3.3 EXAFS CHARACTERIZATION 68
3.3.1 BINARY COMPOUNDS 68
3.3.2
EFFECT OF TEMPERATURE 69
3.3.3 ALLOYING 70
3.3.4 ION IMPLANTATION 71
3.3.5 EFFECT OF PRESSURE 72
3.4 SUMMARY 74
REFERENCES 74
4 DOPANTS 77
FEDERICO BOSCHERINI
4.1 INTRODUCTION TO X-RAY ABSORPTION FINE STRUCTURE
INVESTIGATIONS OF DOPANTS 77
4.1.1 GENERAL ASPECTS 77
4.1.2 EXPERIMENTAL METHODS 78
4.2 A REVIEW OF XAFS INVESTIGATIONS OF DOPANTS 83
4.2.1 AMORPHOUS SEMICONDUCTORS 83
4.2.2 CRYSTALLINE SILICON: BULK 84
4.2.3 CRYSTALLINE SILICON: ULTRA SHALLOW JUNCTIONS 86
4.2.4 SOLAR GRADE SILICON 89
4.2.5 GALLIUM ARSENIDE 90
4.2.6 ZINC OXIDE 92
4.2.7 OTHER SEMICONDUCTORS 94
REFERENCES 95
CONTENTS IX
5 COMPLEXES AND CLUSTERS 99
GIANLUCA CIATTO
5.1 DEFINITION OF COMPLEXES AND CLUSTERS 99
5.2 MODELING AND DATA ANALYSIS APPROACHES 100
5.2.1 CONVENTIONAL XAS ANALYSIS OF COMPLEXES/CLUSTERS. ... 100
5.2.2 VALENCE FORCE FIELD-BASED XAS ANALYSIS
OF COMPLEXES/CLUSTERS 101
5.2.3 DENSITY FUNCTIONAL THEORY-BASED ANALYSIS
OF COMPLEXES/CLUSTERS 102
5.3 COMPLEXES 103
5.3.1 NITROGEN-HYDROGEN COMPLEXES IN DILUTE NITRIDES 103
5.3.2 MANGANESE-HYDROGEN COMPLEXES IN GAMNAS 107
5.3.3 COBALT-OXYGEN VACANCY COMPLEXES IN ZNI_
X
CO
X
O. ... ILL
5.3.4 ERBIUM AT OXYGEN-DECORATED VACANCIES
IN (ER, 0)-DOPED SILICON 115
5.4 CLUSTERING AND ANTICLUSTERING 117
5.4.1 BISMUTH CLUSTERING IN GAASBI EPILAYERS 118
5.4.2 ABSENCE OF CLUSTERING IN GAASSBN AND ZNSSE 121
5.5 SUMMARY 122
REFERENCES 123
6 VIBRATIONAL ANISOTROPY 127
PAOLO FORNASINI
6.1 INTRODUCTION 127
6.2 THEORY 128
6.2.1 AVERAGE DISTANCE 129
6.2.2 PARALLEL MSRD 130
6.2.3 PERPENDICULAR MSRD 131
6.2.4 RELATIVE VIBRATIONAL ANISOTROPY 132
6.3 EXPERIMENTAL RESULTS ON VIBRATIONAL ANISOTROPY 133
6.3.1 THE CASE OF CDTE 133
6.3.2 COMPARISON OF DIAMOND AND ZINBLENDE STRUCTURES .... 135
6.4 TRUE AND APPARENT BOND EXPANSION 139
6.5 NEGATIVE THERMAL EXPANSION CRYSTALS 139
REFERENCES 141
PART II DISORDERED SEMICONDUCTORS
7 AMORPHOUS GROUP IV SEMICONDUCTORS 145
MARK C. RIDGWAY
7.1 INTRODUCTION 145
7.2 STRUCTURE OF AMORPHOUS SEMICONDUCTORS 146
7.3 XAS OF AMORPHOUS SEMICONDUCTORS 147
X CONTENTS
7.4 PREPARATION OF AMORPHOUS GROUP IV SEMICONDUCTOR
SAMPLES FOR XAS 149
7.5 AMORPHOUS GROUP IV SEMICONDUCTORS 149
7.5.1 AMORPHOUS SI (A-SI) 149
7.5.2 AMORPHOUS GE (A-GE) 152
7.5.3 AMORPHOUS SIC (A-SIC) 157
7.5.4 AMORPHOUS SII_JGE
X
(A-SII-^GEJ) 159
7.6 SUMMARY 162
REFERENCES 162
8 AMORPHOUS GROUP 1I1-V SEMICONDUCTORS 165
MARK C. RIDGWAY
8.1 INTRODUCTION 165
8.2 STRUCTURE OF AMORPHOUS GROUP III*V
SEMICONDUCTORS 166
8.3 PREPARATION OF AMORPHOUS GROUP III-V SEMICONDUCTOR
SAMPLES FOR XAS 167
8.4 AMORPHOUS GA-BASED GROUP III-V SEMICONDUCTORS 167
8.4.1 AMORPHOUS GAN (A-GAN) 167
8.4.2 AMORPHOUS GAP (A-GAP) 170
8.4.3 AMORPHOUS GAAS (A-GAAS) 171
8.4.4 AMOIPHOUS GASB (A-GASB) 173
8.5 AMORPHOUS IN-BASED GROUP III-V SEMICONDUCTORS 175
8.5.1 AMORPHOUS INN (A-INN) 175
8.5.2 AMORPHOUS INP (A-INP) 176
8.5.3 AMORPHOUS IN AS (A-INAS) 180
8.5.4 AMORPHOUS LNSB (A-INSB) 182
8.6 SUMMARY 184
REFERENCES 184
9 SEMICONDUCTORS UNDER EXTREME CONDITIONS 187
ANDREA DI CICCO AND ADRIANO FILIPPONI
9.1 INTRODUCTION 187
9.2 EXPERIMENTAL SET-UPS AT SCANNING ENERGY BEAMLINES 190
9.3 EXPERIMENTAL SET-UPS AT ENERGY-DISPERSIVE BEAMLINES 192
9.4 XAS OF AMORPHOUS AND LIQUID SE AT HIGH PRESSURES 193
9.5 THE PHYSICS OF GE AND RELATED SYSTEMS AT HIGH
P AND HIGH T 197
REFERENCES 199
CONTENTS XI
PART M SEMICONDUCTOR NANOSTRUCTURES
10 GROUP IV QUANTUM DOTS AND NANOPARTICLES 203
ALEXANDER V. KOLOBOV
10.1 INTRODUCTION 203
10.2 RAMAN SCATTERING AND ITS PITFALLS 204
10.3 X-RAY ABSORPTION SPECTROSCOPY OF GE QDS
AND NANOCRYSTALS 207
10.3.1 EPITAXIALLY GROWN UNCAPPED GE QDS 208
10.3.2 CAPPED GE QDS 211
10.3.3 GE NANOISLANDS GROWN ON OXIDISED SI SURFACES 215
10.3.4 EMBEDDED GE NANOPARTICLES 217
10.3.5 OTHER-THAN GE QUANTUM DOTS 218
10.4 BEYOND CONVENTIONAL XAFS 218
10.4.1 MULTIPLE SCATTERING ANALYSIS OF
EXAFS
218
10.4.2 DIFFRACTION ANOMALOUS FINE STRUCTURE EXPERIMENTS .... 219
10.4.3 FEMTOMETER PRECISION XAFS 219
10.4.4 SPECTROSCOPY OF EMPTY STATES 219
10.4.5 TIME-RESOLVED STUDIES 220
10.5 SUMMARY AND OUTLOOK 220
REFERENCES 220
11 GROUP IV NANOWIRES 223
XUHUI SUN AND TSUN-KONG SHAM
11.1 INTRODUCTION 223
11.2 SI AND GE NANOWIRES: MORPHOLOGY AND STRUCTURE
VIA TOP-DOWN AND BOTTOM UP STRATEGIES 224
11.3 SOFT X-RAY SPECTROSCOPY: YIELD MEASUREMENTS, XANES,
XES AND XEOL 225
11.3.1 X-RAY ABSORPTION FINE STRUCTURE SPECTROSCOPY 225
11.3.2 SOFT X-RAY ABSORPTION MEASUREMENTS: YIELD
AND DE-EXCITATION SPECTROSCOPY 226
11.3.3 XEOL IN THE TIME DOMAIN 229
11.4 SI AND GE NANOWIRES AND RELATED MATERIALS: X-RAY
SPECTROSCOPY STUDIES 230
11.4.1 SI NANOWIRES 230
11.4.2 GE NANOWIRES AND GE02 NANOWIRES 236
11.4.3 OTHER GROUP IV NANOWIRES (C AND SN02
NANOWIRE) 241
11.5 SUMMARY AND OUTLOOK 242
REFERENCES 244
X
JI CONTENTS
12 GROUP FFL-V AND II-VI QUANTUM DOTS AND NANOPARTICLES 247
ALEXANDER A. GUDA, MIKHAIL A. SOLDATOV
AND ALEXANDER V. SOLDATOV
12.1 PROPERTIES AND APPLICATIONS OF QUANTUM DOTS 247
12.2 SYNTHESIS 250
12.3 METHODS TO STUDY THE QDS 252
12.4 CASE STUDIES 255
12.4.1 GROUP LLL-V QDS AND NANOPARTICLES 255
12.4.2 GROUP II-VI QDS AND NANOPARTICLES 259
REFERENCES 267
13 GROUP III-V AND II-VI NANOWIRES 269
FRANCESCO D ACAPITO
13.1 INTRODUCTION 269
13.2 III-V WIRES 270
13.2.1 GAAS AND INAS 270
13.2.2 GAN AND ALGAN 271
13.3 II-VI WIRES 274
13.3.1 ZNO 274
13.3.2 OTHER II-VI 281
13.4 CONCLUSION 284
REFERENCES 284
PART IV MAGNETIC SEMICONDUCTORS
14 MAGNETIC IONS IN GROUP IV SEMICONDUCTORS 289
ROBERTO GUNNELLA
14.1 INTRODUCTION 289
14.2 THEORETICAL BACKGROUND 290
14.3 EXPERIMENTAL GROWTH TECHNIQUES 293
14.4 SAMPLES CHARACTERIZATION 295
14.5 XANES AND EXAFS OF TM IN IV-GROUP SCS 297
14.5.1 XANES 297
14.5.2 EXAFS 303
14.6 CONCLUSIONS 309
REFERENCES 310
15 MAGNETIC IONS IN GROUP III-V SEMICONDUCTORS 313
KRYSTYNA LAWNICZAK-JABLONSKA
15.1 INTRODUCTION 313
15.2 ORIGIN OF THE MAGNETISM IN SEMICONDUCTORS 314
15.3 LOCATION OF TRANSITION METALS IN THE SEMICONDUCTOR
MATRICES*EXAFS STUDIES 319
CONTENTS XIII
15.3.1 SUBSTITUTIONAL AND INTERSTITIAL POSITIONS
OF THE MAGNETIC IONS 319
15.3.2 FORMATION OF NANOINCLUSIONS 323
15.4 ELECTRONIC STRUCTURE OF MAGNETIC IONS
IN SEMICONDUCTORS*XANES STUDIES 326
15.4.1 SUBSTITUTIONAL AND INTERSTITIAL POSITIONS
OF THE MAGNETIC IONS 326
15.4.2 FORMATION OF NANOINCLUSIONS 329
15.5 MAGNETIC STRUCTURE OF THE MAGNETIC IONS
IN SEMICONDUCTORS*XMCD STUDIES 330
15.6 SUMMARY 335
REFERENCES I 336
16 MAGNETIC IONS IN GROUP 11-VI SEMICONDUCTORS 339
STEVE M. HEALD
16.1 INTRODUCTION 339
16.2 APPLICATION OF XAFS TO MAGNETIC SEMICONDUCTORS 340
16.3 SEARCH FOR DILUTE MAGNETIC SEMICONDUCTORS
IN N-VI SYSTEMS 342
16.3.1 MN DOPING 342
16.3.2 CR DOPED ZNTE 343
16.4 DOPED ZNO 345
16.4.1 CO DOPING 345
16.4.2 DOPING OF ZNO BY OTHER TRANSITION METALS 348
16.5 SUMMARY 350
REFERENCES 350
INDEX 355
|
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| indexdate | 2024-07-10T01:15:35Z |
| institution | BVB |
| isbn | 3662443619 9783662443613 |
| language | English |
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| owner_facet | DE-11 DE-83 |
| physical | XVI, 361 S. Ill., graph. Darst. |
| publishDate | 2015 |
| publishDateSearch | 2015 |
| publishDateSort | 2015 |
| publisher | Springer |
| record_format | marc |
| series | Springer Series in Optical Sciences |
| series2 | Springer Series in Optical Sciences |
| spelling | X-Ray absorption spectroscopy of semiconductors Claudia S. Schnohr ... eds Berlin [u.a.] Springer 2015 XVI, 361 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer Series in Optical Sciences 190 Halbleiter (DE-588)4022993-2 gnd rswk-swf Röntgenabsorptionsspektroskopie (DE-588)4178303-7 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Röntgenabsorptionsspektroskopie (DE-588)4178303-7 s DE-604 Schnohr, Claudia S. edt Erscheint auch als Online-Ausgabe 978-3-662-44362-0 Springer Series in Optical Sciences 190 (DE-604)BV000000237 190 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=027656801&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | X-Ray absorption spectroscopy of semiconductors Springer Series in Optical Sciences Halbleiter (DE-588)4022993-2 gnd Röntgenabsorptionsspektroskopie (DE-588)4178303-7 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4178303-7 |
| title | X-Ray absorption spectroscopy of semiconductors |
| title_auth | X-Ray absorption spectroscopy of semiconductors |
| title_exact_search | X-Ray absorption spectroscopy of semiconductors |
| title_full | X-Ray absorption spectroscopy of semiconductors Claudia S. Schnohr ... eds |
| title_fullStr | X-Ray absorption spectroscopy of semiconductors Claudia S. Schnohr ... eds |
| title_full_unstemmed | X-Ray absorption spectroscopy of semiconductors Claudia S. Schnohr ... eds |
| title_short | X-Ray absorption spectroscopy of semiconductors |
| title_sort | x ray absorption spectroscopy of semiconductors |
| topic | Halbleiter (DE-588)4022993-2 gnd Röntgenabsorptionsspektroskopie (DE-588)4178303-7 gnd |
| topic_facet | Halbleiter Röntgenabsorptionsspektroskopie |
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