Silicon Devices and Process Integration: Deep Submicron and Nano-Scale Technologies
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Springer US
2009
|
| Schlagworte: | |
| Online-Zugang: | BTU01 FHN01 FHR01 Volltext |
| Beschreibung: | Silicon Devices and Process Integration is compiled from industrial and academic lecture notes and reflects years of experience in the development of silicon devices. It is prepared specifically for engineers and scientists in semiconductor research, development and manufacturing. It is also suitable for a one-semester course in electrical engineering and materials science at the upper undergraduate or lower graduate level. The book covers both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Topics covered include: MOS structure, parameter extraction - Short and narrow-channel effects - CMOS mobility enhancement techniques - High-K gate dielectrics, advanced gate stacks - Low-K dielectrics and Cu interconnects - Analog devices and passive components - CMOS and BiCMOS process integration - DRAM, SRAM and NVM cell structures. The book covers state-of-the-art silicon devices and integrated process technologies. It represents a comprehensive discussion of modern silicon devices, their characteristics, and interactions with process parameters |
| Beschreibung: | 1 Online-Ressource |
| ISBN: | 9780387690100 |
| DOI: | 10.1007/978-0-387-69010-0 |
Internformat
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV041889536 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 140603s2009 |||| o||u| ||||||eng d | ||
| 020 | |a 9780387690100 |c Online |9 978-0-387-69010-0 | ||
| 024 | 7 | |a 10.1007/978-0-387-69010-0 |2 doi | |
| 035 | |a (OCoLC)881634312 | ||
| 035 | |a (DE-599)BVBBV041889536 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-634 |a DE-898 |a DE-92 |a DE-83 | ||
| 082 | 0 | |a 621.3815 |2 23 | |
| 100 | 1 | |a El-Kareh, Badih |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Silicon Devices and Process Integration |b Deep Submicron and Nano-Scale Technologies |c by Badih El-Kareh |
| 264 | 1 | |a Boston, MA |b Springer US |c 2009 | |
| 300 | |a 1 Online-Ressource | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 500 | |a Silicon Devices and Process Integration is compiled from industrial and academic lecture notes and reflects years of experience in the development of silicon devices. It is prepared specifically for engineers and scientists in semiconductor research, development and manufacturing. It is also suitable for a one-semester course in electrical engineering and materials science at the upper undergraduate or lower graduate level. The book covers both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Topics covered include: MOS structure, parameter extraction - Short and narrow-channel effects - CMOS mobility enhancement techniques - High-K gate dielectrics, advanced gate stacks - Low-K dielectrics and Cu interconnects - Analog devices and passive components - CMOS and BiCMOS process integration - DRAM, SRAM and NVM cell structures. The book covers state-of-the-art silicon devices and integrated process technologies. It represents a comprehensive discussion of modern silicon devices, their characteristics, and interactions with process parameters | ||
| 505 | 0 | |a Properties of the Silicon Crystal. Valence-bond and energy-band models. Thermal equilibrium statistics. Carrier transport mechanisms. Non-equilibrium conditions and carrier lifetime -- Junctions and Contacts. Ohmic, non-ohmic, and rectifying contacts. PN junctions, homo- and hetero-junctions. Contact und junction characterization, parameter extraction. Varactors -- Junction Field-Effect Transistor, JFET. Structure and mode of operation. Physics of JFET. JFET characterization and parameter extraction. High-voltage applications. Parasitic effects -- Bipolar Junction Transistor, BJT. Structure and mode of operation. Physics of BJT. Heterojunction Bipolar Transistor, HBT. Transistor characterization and parameter extraction. High-voltage applications -- Parasitic effects | |
| 650 | 4 | |a Engineering | |
| 650 | 4 | |a Computer engineering | |
| 650 | 4 | |a Electronics | |
| 650 | 4 | |a Systems engineering | |
| 650 | 4 | |a Materials | |
| 650 | 4 | |a Circuits and Systems | |
| 650 | 4 | |a Electronics and Microelectronics, Instrumentation | |
| 650 | 4 | |a Electrical Engineering | |
| 650 | 4 | |a Materials Science, general | |
| 650 | 4 | |a Ingenieurwissenschaften | |
| 776 | 0 | 8 | |i Erscheint auch als |n Druckausgabe |z 978-0-387-36798-9 |
| 856 | 4 | 0 | |u https://doi.org/10.1007/978-0-387-69010-0 |x Verlag |3 Volltext |
| 912 | |a ZDB-2-ENG | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-027333489 | ||
| 966 | e | |u https://doi.org/10.1007/978-0-387-69010-0 |l BTU01 |p ZDB-2-ENG |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1007/978-0-387-69010-0 |l FHN01 |p ZDB-2-ENG |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1007/978-0-387-69010-0 |l FHR01 |p ZDB-2-ENG |x Verlag |3 Volltext | |
Datensatz im Suchindex
| _version_ | 1804152238456700928 |
|---|---|
| any_adam_object | |
| author | El-Kareh, Badih |
| author_facet | El-Kareh, Badih |
| author_role | aut |
| author_sort | El-Kareh, Badih |
| author_variant | b e k bek |
| building | Verbundindex |
| bvnumber | BV041889536 |
| collection | ZDB-2-ENG |
| contents | Properties of the Silicon Crystal. Valence-bond and energy-band models. Thermal equilibrium statistics. Carrier transport mechanisms. Non-equilibrium conditions and carrier lifetime -- Junctions and Contacts. Ohmic, non-ohmic, and rectifying contacts. PN junctions, homo- and hetero-junctions. Contact und junction characterization, parameter extraction. Varactors -- Junction Field-Effect Transistor, JFET. Structure and mode of operation. Physics of JFET. JFET characterization and parameter extraction. High-voltage applications. Parasitic effects -- Bipolar Junction Transistor, BJT. Structure and mode of operation. Physics of BJT. Heterojunction Bipolar Transistor, HBT. Transistor characterization and parameter extraction. High-voltage applications -- Parasitic effects |
| ctrlnum | (OCoLC)881634312 (DE-599)BVBBV041889536 |
| dewey-full | 621.3815 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815 |
| dewey-search | 621.3815 |
| dewey-sort | 3621.3815 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1007/978-0-387-69010-0 |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03670nmm a2200493zc 4500</leader><controlfield tag="001">BV041889536</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">140603s2009 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780387690100</subfield><subfield code="c">Online</subfield><subfield code="9">978-0-387-69010-0</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/978-0-387-69010-0</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)881634312</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV041889536</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-634</subfield><subfield code="a">DE-898</subfield><subfield code="a">DE-92</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815</subfield><subfield code="2">23</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">El-Kareh, Badih</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Silicon Devices and Process Integration</subfield><subfield code="b">Deep Submicron and Nano-Scale Technologies</subfield><subfield code="c">by Badih El-Kareh</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Boston, MA</subfield><subfield code="b">Springer US</subfield><subfield code="c">2009</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Silicon Devices and Process Integration is compiled from industrial and academic lecture notes and reflects years of experience in the development of silicon devices. It is prepared specifically for engineers and scientists in semiconductor research, development and manufacturing. It is also suitable for a one-semester course in electrical engineering and materials science at the upper undergraduate or lower graduate level. The book covers both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Topics covered include: MOS structure, parameter extraction - Short and narrow-channel effects - CMOS mobility enhancement techniques - High-K gate dielectrics, advanced gate stacks - Low-K dielectrics and Cu interconnects - Analog devices and passive components - CMOS and BiCMOS process integration - DRAM, SRAM and NVM cell structures. The book covers state-of-the-art silicon devices and integrated process technologies. It represents a comprehensive discussion of modern silicon devices, their characteristics, and interactions with process parameters</subfield></datafield><datafield tag="505" ind1="0" ind2=" "><subfield code="a">Properties of the Silicon Crystal. Valence-bond and energy-band models. Thermal equilibrium statistics. Carrier transport mechanisms. Non-equilibrium conditions and carrier lifetime -- Junctions and Contacts. Ohmic, non-ohmic, and rectifying contacts. PN junctions, homo- and hetero-junctions. Contact und junction characterization, parameter extraction. Varactors -- Junction Field-Effect Transistor, JFET. Structure and mode of operation. Physics of JFET. JFET characterization and parameter extraction. High-voltage applications. Parasitic effects -- Bipolar Junction Transistor, BJT. Structure and mode of operation. Physics of BJT. Heterojunction Bipolar Transistor, HBT. Transistor characterization and parameter extraction. High-voltage applications -- Parasitic effects</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Computer engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Systems engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Circuits and Systems</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronics and Microelectronics, Instrumentation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrical Engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Materials Science, general</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ingenieurwissenschaften</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druckausgabe</subfield><subfield code="z">978-0-387-36798-9</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/978-0-387-69010-0</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-ENG</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-027333489</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-0-387-69010-0</subfield><subfield code="l">BTU01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-0-387-69010-0</subfield><subfield code="l">FHN01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-0-387-69010-0</subfield><subfield code="l">FHR01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV041889536 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T01:07:32Z |
| institution | BVB |
| isbn | 9780387690100 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027333489 |
| oclc_num | 881634312 |
| open_access_boolean | |
| owner | DE-634 DE-898 DE-BY-UBR DE-92 DE-83 |
| owner_facet | DE-634 DE-898 DE-BY-UBR DE-92 DE-83 |
| physical | 1 Online-Ressource |
| psigel | ZDB-2-ENG |
| publishDate | 2009 |
| publishDateSearch | 2009 |
| publishDateSort | 2009 |
| publisher | Springer US |
| record_format | marc |
| spelling | El-Kareh, Badih Verfasser aut Silicon Devices and Process Integration Deep Submicron and Nano-Scale Technologies by Badih El-Kareh Boston, MA Springer US 2009 1 Online-Ressource txt rdacontent c rdamedia cr rdacarrier Silicon Devices and Process Integration is compiled from industrial and academic lecture notes and reflects years of experience in the development of silicon devices. It is prepared specifically for engineers and scientists in semiconductor research, development and manufacturing. It is also suitable for a one-semester course in electrical engineering and materials science at the upper undergraduate or lower graduate level. The book covers both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Topics covered include: MOS structure, parameter extraction - Short and narrow-channel effects - CMOS mobility enhancement techniques - High-K gate dielectrics, advanced gate stacks - Low-K dielectrics and Cu interconnects - Analog devices and passive components - CMOS and BiCMOS process integration - DRAM, SRAM and NVM cell structures. The book covers state-of-the-art silicon devices and integrated process technologies. It represents a comprehensive discussion of modern silicon devices, their characteristics, and interactions with process parameters Properties of the Silicon Crystal. Valence-bond and energy-band models. Thermal equilibrium statistics. Carrier transport mechanisms. Non-equilibrium conditions and carrier lifetime -- Junctions and Contacts. Ohmic, non-ohmic, and rectifying contacts. PN junctions, homo- and hetero-junctions. Contact und junction characterization, parameter extraction. Varactors -- Junction Field-Effect Transistor, JFET. Structure and mode of operation. Physics of JFET. JFET characterization and parameter extraction. High-voltage applications. Parasitic effects -- Bipolar Junction Transistor, BJT. Structure and mode of operation. Physics of BJT. Heterojunction Bipolar Transistor, HBT. Transistor characterization and parameter extraction. High-voltage applications -- Parasitic effects Engineering Computer engineering Electronics Systems engineering Materials Circuits and Systems Electronics and Microelectronics, Instrumentation Electrical Engineering Materials Science, general Ingenieurwissenschaften Erscheint auch als Druckausgabe 978-0-387-36798-9 https://doi.org/10.1007/978-0-387-69010-0 Verlag Volltext |
| spellingShingle | El-Kareh, Badih Silicon Devices and Process Integration Deep Submicron and Nano-Scale Technologies Properties of the Silicon Crystal. Valence-bond and energy-band models. Thermal equilibrium statistics. Carrier transport mechanisms. Non-equilibrium conditions and carrier lifetime -- Junctions and Contacts. Ohmic, non-ohmic, and rectifying contacts. PN junctions, homo- and hetero-junctions. Contact und junction characterization, parameter extraction. Varactors -- Junction Field-Effect Transistor, JFET. Structure and mode of operation. Physics of JFET. JFET characterization and parameter extraction. High-voltage applications. Parasitic effects -- Bipolar Junction Transistor, BJT. Structure and mode of operation. Physics of BJT. Heterojunction Bipolar Transistor, HBT. Transistor characterization and parameter extraction. High-voltage applications -- Parasitic effects Engineering Computer engineering Electronics Systems engineering Materials Circuits and Systems Electronics and Microelectronics, Instrumentation Electrical Engineering Materials Science, general Ingenieurwissenschaften |
| title | Silicon Devices and Process Integration Deep Submicron and Nano-Scale Technologies |
| title_auth | Silicon Devices and Process Integration Deep Submicron and Nano-Scale Technologies |
| title_exact_search | Silicon Devices and Process Integration Deep Submicron and Nano-Scale Technologies |
| title_full | Silicon Devices and Process Integration Deep Submicron and Nano-Scale Technologies by Badih El-Kareh |
| title_fullStr | Silicon Devices and Process Integration Deep Submicron and Nano-Scale Technologies by Badih El-Kareh |
| title_full_unstemmed | Silicon Devices and Process Integration Deep Submicron and Nano-Scale Technologies by Badih El-Kareh |
| title_short | Silicon Devices and Process Integration |
| title_sort | silicon devices and process integration deep submicron and nano scale technologies |
| title_sub | Deep Submicron and Nano-Scale Technologies |
| topic | Engineering Computer engineering Electronics Systems engineering Materials Circuits and Systems Electronics and Microelectronics, Instrumentation Electrical Engineering Materials Science, general Ingenieurwissenschaften |
| topic_facet | Engineering Computer engineering Electronics Systems engineering Materials Circuits and Systems Electronics and Microelectronics, Instrumentation Electrical Engineering Materials Science, general Ingenieurwissenschaften |
| url | https://doi.org/10.1007/978-0-387-69010-0 |
| work_keys_str_mv | AT elkarehbadih silicondevicesandprocessintegrationdeepsubmicronandnanoscaletechnologies |