High-k gate dielectrics for CMOS technology:
Gespeichert in:
| Format: | Elektronisch E-Book |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Weinheim
Wiley-VCH
2012
|
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | "A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Topics covered include downscaling limits of current transistor designs, deposition techniques for high-k dielectric materials, electrical characterization of the resulting devices, and an outlook towards future transistor stacking technology. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering."-- |
| Beschreibung: | 1 Online-Ressource |
| ISBN: | 9783527646340 9783527646371 9783527646364 9783527646357 9783527330324 |
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| 500 | |a "A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Topics covered include downscaling limits of current transistor designs, deposition techniques for high-k dielectric materials, electrical characterization of the resulting devices, and an outlook towards future transistor stacking technology. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering."-- | ||
| 505 | 0 | |a High-k Gate Dielectrics for CMOS Technology; Contents; Preface; List of Contributors; Color Plates; Part One Scaling and Challenge of Si-based CMOS; 1 Scaling and Limitation of Si-based CMOS; 1.1 Introduction; 1.2 Scaling and Limitation of CMOS; 1.2.1 Device Scaling and Power Dissipation; 1.2.2 Gate Oxide Tunneling; 1.2.3 Gate Oxide Scaling Trends; 1.2.4 Scaling and Limitation of SiO2 Gate Dielectrics; 1.2.5 Silicon Oxynitrides; 1.3 Toward Alternative Gate Stacks Technology; 1.3.1 Advances and Challenges in Dielectric Development; 1.3.2 Advances and Challenges in Electrode Development | |
| 505 | 0 | |a 1.4 Improvements and Alternative to CMOS Technologies1.4.1 Improvement to CMOS; 1.4.1.1 New Materials; 1.4.1.2 New Structures; 1.5 Potential Technologies Beyond CMOS; 1.6 Conclusions; References; Part Two High-k Deposition and Materials Characterization; 2 Issues in High-k Gate Dielectrics and its Stack Interfaces; 2.1 Introduction; 2.2 High-k Dielectrics; 2.2.1 The Criteria Required for High-k Dielectrics; 2.2.2 The Challenges of High-k Dielectrics; 2.2.2.1 Structural Defects; 2.2.2.2 Channel Mobility Degradation; 2.2.2.3 Threshold Voltage Control; 2.2.2.4 Reliability; 2.3 Metal Gates | |
| 505 | 0 | |a 2.3.1 Basic Requirements for Metal Gates2.3.2 Metal Gate Materials; 2.3.2.1 Pure Metals; 2.3.2.2 Metallic Alloys; 2.3.2.3 Metal Nitrides; 2.3.2.4 Metal Silicides; 2.3.3 Work Function; 2.3.4 Metal Gate Structures; 2.3.5 Metal Gate/High-k Integration; 2.3.6 Process Integration; 2.4 Integration of High-k Gate Dielectrics with Alternative Channel Materials; 2.4.1 High-k/Ge Interface; 2.4.2 High-k/III-V Interface; 2.5 Summary; References; 3 UV Engineering of High-k Thin Films; 3.1 Introduction; 3.2 Gas Discharge Generation of UV (Excimer) Radiation | |
| 505 | 0 | |a 3.3 Excimer Lamp Sources Based on Silent Discharges3.4 Predeposition Surface Cleaning for High-k Layers; 3.5 UV Photon Deposition of Ta2O5 Films; 3.6 Photoinduced Deposition of Hf1-xSixOy Layers; 3.7 Summary; References; 4 Atomic Layer Deposition Process of Hf-Based High-k Gate Dielectric Film on Si Substrate; 4.1 Introduction; 4.2 Precursor Effect on the HfO2 Characteristics; 4.2.1 Hafnium Precursor Effect on the HfO2 Dielectric Characteristics; 4.2.1.1 Hafnium Chloride (HfCl4); 4.2.1.2 Tetrakis Dimethylamido Hafnium [HfN(CH3)2]4; 4.2.1.3 Tetrakis Ethylmethylamino Hafnium (Hf[N(C2H5)(CH3)]4) | |
| 505 | 0 | |a 4.2.1.4 tert-Butoxytris[Ethylmethylamido] Hafnium (HfOtBu[NEtMe]3)4.2.1.5 tert-Butoxide Hafnium (Hf[OC4H9]4); 4.2.2 Oxygen Sources and Reactants; 4.2.2.1 H2O versus O3; 4.2.2.2 O3 Concentration; 4.2.2.3 Reactants for In Situ N Incorporation; 4.3 Doped and Mixed High-k; 4.3.1 Zr-Doped HfO2; 4.3.2 Si-Doped HfO2; 4.3.3 Al-Doped HfO2; 4.4 Summary; References; 5 Structural and Electrical Characteristics of Alternative High-k Dielectrics for CMOS Applications; 5.1 Introduction; 5.2 Requirement of High-k Oxide Materials; 5.3 Rare-Earth Oxide as Alternative Gate Dielectrics; 5.4 Structural Characteristics of High-k RE Oxide Films | |
| 650 | 7 | |a SCIENCE / Physics / Electricity |2 bisacsh | |
| 650 | 7 | |a SCIENCE / Physics / Electromagnetism |2 bisacsh | |
| 650 | 7 | |a Dielectrics |2 fast | |
| 650 | 7 | |a Metal oxide semiconductors, Complementary |2 fast | |
| 650 | 4 | |a Dielectrics | |
| 650 | 4 | |a Metal oxide semiconductors, Complementary | |
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| 700 | 1 | |a He, Gang |e Sonstige |0 (DE-588)1025643119 |4 oth | |
| 700 | 1 | |a Sun, Zhaoqi |e Sonstige |4 oth | |
| 856 | 4 | 0 | |u https://onlinelibrary.wiley.com/doi/book/10.1002/9783527646340 |x Verlag |3 Volltext |
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Datensatz im Suchindex
| _version_ | 1804152164971446272 |
|---|---|
| any_adam_object | |
| author_GND | (DE-588)1025643119 |
| building | Verbundindex |
| bvnumber | BV041829426 |
| classification_rvk | ZN 3490 |
| collection | ZDB-35-WIC ZDB-35-WCQ |
| contents | High-k Gate Dielectrics for CMOS Technology; Contents; Preface; List of Contributors; Color Plates; Part One Scaling and Challenge of Si-based CMOS; 1 Scaling and Limitation of Si-based CMOS; 1.1 Introduction; 1.2 Scaling and Limitation of CMOS; 1.2.1 Device Scaling and Power Dissipation; 1.2.2 Gate Oxide Tunneling; 1.2.3 Gate Oxide Scaling Trends; 1.2.4 Scaling and Limitation of SiO2 Gate Dielectrics; 1.2.5 Silicon Oxynitrides; 1.3 Toward Alternative Gate Stacks Technology; 1.3.1 Advances and Challenges in Dielectric Development; 1.3.2 Advances and Challenges in Electrode Development 1.4 Improvements and Alternative to CMOS Technologies1.4.1 Improvement to CMOS; 1.4.1.1 New Materials; 1.4.1.2 New Structures; 1.5 Potential Technologies Beyond CMOS; 1.6 Conclusions; References; Part Two High-k Deposition and Materials Characterization; 2 Issues in High-k Gate Dielectrics and its Stack Interfaces; 2.1 Introduction; 2.2 High-k Dielectrics; 2.2.1 The Criteria Required for High-k Dielectrics; 2.2.2 The Challenges of High-k Dielectrics; 2.2.2.1 Structural Defects; 2.2.2.2 Channel Mobility Degradation; 2.2.2.3 Threshold Voltage Control; 2.2.2.4 Reliability; 2.3 Metal Gates 2.3.1 Basic Requirements for Metal Gates2.3.2 Metal Gate Materials; 2.3.2.1 Pure Metals; 2.3.2.2 Metallic Alloys; 2.3.2.3 Metal Nitrides; 2.3.2.4 Metal Silicides; 2.3.3 Work Function; 2.3.4 Metal Gate Structures; 2.3.5 Metal Gate/High-k Integration; 2.3.6 Process Integration; 2.4 Integration of High-k Gate Dielectrics with Alternative Channel Materials; 2.4.1 High-k/Ge Interface; 2.4.2 High-k/III-V Interface; 2.5 Summary; References; 3 UV Engineering of High-k Thin Films; 3.1 Introduction; 3.2 Gas Discharge Generation of UV (Excimer) Radiation 3.3 Excimer Lamp Sources Based on Silent Discharges3.4 Predeposition Surface Cleaning for High-k Layers; 3.5 UV Photon Deposition of Ta2O5 Films; 3.6 Photoinduced Deposition of Hf1-xSixOy Layers; 3.7 Summary; References; 4 Atomic Layer Deposition Process of Hf-Based High-k Gate Dielectric Film on Si Substrate; 4.1 Introduction; 4.2 Precursor Effect on the HfO2 Characteristics; 4.2.1 Hafnium Precursor Effect on the HfO2 Dielectric Characteristics; 4.2.1.1 Hafnium Chloride (HfCl4); 4.2.1.2 Tetrakis Dimethylamido Hafnium [HfN(CH3)2]4; 4.2.1.3 Tetrakis Ethylmethylamino Hafnium (Hf[N(C2H5)(CH3)]4) 4.2.1.4 tert-Butoxytris[Ethylmethylamido] Hafnium (HfOtBu[NEtMe]3)4.2.1.5 tert-Butoxide Hafnium (Hf[OC4H9]4); 4.2.2 Oxygen Sources and Reactants; 4.2.2.1 H2O versus O3; 4.2.2.2 O3 Concentration; 4.2.2.3 Reactants for In Situ N Incorporation; 4.3 Doped and Mixed High-k; 4.3.1 Zr-Doped HfO2; 4.3.2 Si-Doped HfO2; 4.3.3 Al-Doped HfO2; 4.4 Summary; References; 5 Structural and Electrical Characteristics of Alternative High-k Dielectrics for CMOS Applications; 5.1 Introduction; 5.2 Requirement of High-k Oxide Materials; 5.3 Rare-Earth Oxide as Alternative Gate Dielectrics; 5.4 Structural Characteristics of High-k RE Oxide Films |
| ctrlnum | (OCoLC)798536325 (DE-599)BVBBV041829426 |
| dewey-full | 537/.24 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537/.24 |
| dewey-search | 537/.24 |
| dewey-sort | 3537 224 |
| dewey-tens | 530 - Physics |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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| id | DE-604.BV041829426 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T01:06:22Z |
| institution | BVB |
| isbn | 9783527646340 9783527646371 9783527646364 9783527646357 9783527330324 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027274345 |
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| publisher | Wiley-VCH |
| record_format | marc |
| spelling | High-k gate dielectrics for CMOS technology edited by Gang He and Zhaoqi Sun Weinheim Wiley-VCH 2012 1 Online-Ressource txt rdacontent c rdamedia cr rdacarrier "A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Topics covered include downscaling limits of current transistor designs, deposition techniques for high-k dielectric materials, electrical characterization of the resulting devices, and an outlook towards future transistor stacking technology. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering."-- High-k Gate Dielectrics for CMOS Technology; Contents; Preface; List of Contributors; Color Plates; Part One Scaling and Challenge of Si-based CMOS; 1 Scaling and Limitation of Si-based CMOS; 1.1 Introduction; 1.2 Scaling and Limitation of CMOS; 1.2.1 Device Scaling and Power Dissipation; 1.2.2 Gate Oxide Tunneling; 1.2.3 Gate Oxide Scaling Trends; 1.2.4 Scaling and Limitation of SiO2 Gate Dielectrics; 1.2.5 Silicon Oxynitrides; 1.3 Toward Alternative Gate Stacks Technology; 1.3.1 Advances and Challenges in Dielectric Development; 1.3.2 Advances and Challenges in Electrode Development 1.4 Improvements and Alternative to CMOS Technologies1.4.1 Improvement to CMOS; 1.4.1.1 New Materials; 1.4.1.2 New Structures; 1.5 Potential Technologies Beyond CMOS; 1.6 Conclusions; References; Part Two High-k Deposition and Materials Characterization; 2 Issues in High-k Gate Dielectrics and its Stack Interfaces; 2.1 Introduction; 2.2 High-k Dielectrics; 2.2.1 The Criteria Required for High-k Dielectrics; 2.2.2 The Challenges of High-k Dielectrics; 2.2.2.1 Structural Defects; 2.2.2.2 Channel Mobility Degradation; 2.2.2.3 Threshold Voltage Control; 2.2.2.4 Reliability; 2.3 Metal Gates 2.3.1 Basic Requirements for Metal Gates2.3.2 Metal Gate Materials; 2.3.2.1 Pure Metals; 2.3.2.2 Metallic Alloys; 2.3.2.3 Metal Nitrides; 2.3.2.4 Metal Silicides; 2.3.3 Work Function; 2.3.4 Metal Gate Structures; 2.3.5 Metal Gate/High-k Integration; 2.3.6 Process Integration; 2.4 Integration of High-k Gate Dielectrics with Alternative Channel Materials; 2.4.1 High-k/Ge Interface; 2.4.2 High-k/III-V Interface; 2.5 Summary; References; 3 UV Engineering of High-k Thin Films; 3.1 Introduction; 3.2 Gas Discharge Generation of UV (Excimer) Radiation 3.3 Excimer Lamp Sources Based on Silent Discharges3.4 Predeposition Surface Cleaning for High-k Layers; 3.5 UV Photon Deposition of Ta2O5 Films; 3.6 Photoinduced Deposition of Hf1-xSixOy Layers; 3.7 Summary; References; 4 Atomic Layer Deposition Process of Hf-Based High-k Gate Dielectric Film on Si Substrate; 4.1 Introduction; 4.2 Precursor Effect on the HfO2 Characteristics; 4.2.1 Hafnium Precursor Effect on the HfO2 Dielectric Characteristics; 4.2.1.1 Hafnium Chloride (HfCl4); 4.2.1.2 Tetrakis Dimethylamido Hafnium [HfN(CH3)2]4; 4.2.1.3 Tetrakis Ethylmethylamino Hafnium (Hf[N(C2H5)(CH3)]4) 4.2.1.4 tert-Butoxytris[Ethylmethylamido] Hafnium (HfOtBu[NEtMe]3)4.2.1.5 tert-Butoxide Hafnium (Hf[OC4H9]4); 4.2.2 Oxygen Sources and Reactants; 4.2.2.1 H2O versus O3; 4.2.2.2 O3 Concentration; 4.2.2.3 Reactants for In Situ N Incorporation; 4.3 Doped and Mixed High-k; 4.3.1 Zr-Doped HfO2; 4.3.2 Si-Doped HfO2; 4.3.3 Al-Doped HfO2; 4.4 Summary; References; 5 Structural and Electrical Characteristics of Alternative High-k Dielectrics for CMOS Applications; 5.1 Introduction; 5.2 Requirement of High-k Oxide Materials; 5.3 Rare-Earth Oxide as Alternative Gate Dielectrics; 5.4 Structural Characteristics of High-k RE Oxide Films SCIENCE / Physics / Electricity bisacsh SCIENCE / Physics / Electromagnetism bisacsh Dielectrics fast Metal oxide semiconductors, Complementary fast Dielectrics Metal oxide semiconductors, Complementary CMOS (DE-588)4010319-5 gnd rswk-swf High-k-Dielektrikum (DE-588)7602833-1 gnd rswk-swf Gate-Oxid (DE-588)4269383-4 gnd rswk-swf High-k-Dielektrikum (DE-588)7602833-1 s CMOS (DE-588)4010319-5 s Gate-Oxid (DE-588)4269383-4 s DE-604 He, Gang Sonstige (DE-588)1025643119 oth Sun, Zhaoqi Sonstige oth https://onlinelibrary.wiley.com/doi/book/10.1002/9783527646340 Verlag Volltext |
| spellingShingle | High-k gate dielectrics for CMOS technology High-k Gate Dielectrics for CMOS Technology; Contents; Preface; List of Contributors; Color Plates; Part One Scaling and Challenge of Si-based CMOS; 1 Scaling and Limitation of Si-based CMOS; 1.1 Introduction; 1.2 Scaling and Limitation of CMOS; 1.2.1 Device Scaling and Power Dissipation; 1.2.2 Gate Oxide Tunneling; 1.2.3 Gate Oxide Scaling Trends; 1.2.4 Scaling and Limitation of SiO2 Gate Dielectrics; 1.2.5 Silicon Oxynitrides; 1.3 Toward Alternative Gate Stacks Technology; 1.3.1 Advances and Challenges in Dielectric Development; 1.3.2 Advances and Challenges in Electrode Development 1.4 Improvements and Alternative to CMOS Technologies1.4.1 Improvement to CMOS; 1.4.1.1 New Materials; 1.4.1.2 New Structures; 1.5 Potential Technologies Beyond CMOS; 1.6 Conclusions; References; Part Two High-k Deposition and Materials Characterization; 2 Issues in High-k Gate Dielectrics and its Stack Interfaces; 2.1 Introduction; 2.2 High-k Dielectrics; 2.2.1 The Criteria Required for High-k Dielectrics; 2.2.2 The Challenges of High-k Dielectrics; 2.2.2.1 Structural Defects; 2.2.2.2 Channel Mobility Degradation; 2.2.2.3 Threshold Voltage Control; 2.2.2.4 Reliability; 2.3 Metal Gates 2.3.1 Basic Requirements for Metal Gates2.3.2 Metal Gate Materials; 2.3.2.1 Pure Metals; 2.3.2.2 Metallic Alloys; 2.3.2.3 Metal Nitrides; 2.3.2.4 Metal Silicides; 2.3.3 Work Function; 2.3.4 Metal Gate Structures; 2.3.5 Metal Gate/High-k Integration; 2.3.6 Process Integration; 2.4 Integration of High-k Gate Dielectrics with Alternative Channel Materials; 2.4.1 High-k/Ge Interface; 2.4.2 High-k/III-V Interface; 2.5 Summary; References; 3 UV Engineering of High-k Thin Films; 3.1 Introduction; 3.2 Gas Discharge Generation of UV (Excimer) Radiation 3.3 Excimer Lamp Sources Based on Silent Discharges3.4 Predeposition Surface Cleaning for High-k Layers; 3.5 UV Photon Deposition of Ta2O5 Films; 3.6 Photoinduced Deposition of Hf1-xSixOy Layers; 3.7 Summary; References; 4 Atomic Layer Deposition Process of Hf-Based High-k Gate Dielectric Film on Si Substrate; 4.1 Introduction; 4.2 Precursor Effect on the HfO2 Characteristics; 4.2.1 Hafnium Precursor Effect on the HfO2 Dielectric Characteristics; 4.2.1.1 Hafnium Chloride (HfCl4); 4.2.1.2 Tetrakis Dimethylamido Hafnium [HfN(CH3)2]4; 4.2.1.3 Tetrakis Ethylmethylamino Hafnium (Hf[N(C2H5)(CH3)]4) 4.2.1.4 tert-Butoxytris[Ethylmethylamido] Hafnium (HfOtBu[NEtMe]3)4.2.1.5 tert-Butoxide Hafnium (Hf[OC4H9]4); 4.2.2 Oxygen Sources and Reactants; 4.2.2.1 H2O versus O3; 4.2.2.2 O3 Concentration; 4.2.2.3 Reactants for In Situ N Incorporation; 4.3 Doped and Mixed High-k; 4.3.1 Zr-Doped HfO2; 4.3.2 Si-Doped HfO2; 4.3.3 Al-Doped HfO2; 4.4 Summary; References; 5 Structural and Electrical Characteristics of Alternative High-k Dielectrics for CMOS Applications; 5.1 Introduction; 5.2 Requirement of High-k Oxide Materials; 5.3 Rare-Earth Oxide as Alternative Gate Dielectrics; 5.4 Structural Characteristics of High-k RE Oxide Films SCIENCE / Physics / Electricity bisacsh SCIENCE / Physics / Electromagnetism bisacsh Dielectrics fast Metal oxide semiconductors, Complementary fast Dielectrics Metal oxide semiconductors, Complementary CMOS (DE-588)4010319-5 gnd High-k-Dielektrikum (DE-588)7602833-1 gnd Gate-Oxid (DE-588)4269383-4 gnd |
| subject_GND | (DE-588)4010319-5 (DE-588)7602833-1 (DE-588)4269383-4 |
| title | High-k gate dielectrics for CMOS technology |
| title_auth | High-k gate dielectrics for CMOS technology |
| title_exact_search | High-k gate dielectrics for CMOS technology |
| title_full | High-k gate dielectrics for CMOS technology edited by Gang He and Zhaoqi Sun |
| title_fullStr | High-k gate dielectrics for CMOS technology edited by Gang He and Zhaoqi Sun |
| title_full_unstemmed | High-k gate dielectrics for CMOS technology edited by Gang He and Zhaoqi Sun |
| title_short | High-k gate dielectrics for CMOS technology |
| title_sort | high k gate dielectrics for cmos technology |
| topic | SCIENCE / Physics / Electricity bisacsh SCIENCE / Physics / Electromagnetism bisacsh Dielectrics fast Metal oxide semiconductors, Complementary fast Dielectrics Metal oxide semiconductors, Complementary CMOS (DE-588)4010319-5 gnd High-k-Dielektrikum (DE-588)7602833-1 gnd Gate-Oxid (DE-588)4269383-4 gnd |
| topic_facet | SCIENCE / Physics / Electricity SCIENCE / Physics / Electromagnetism Dielectrics Metal oxide semiconductors, Complementary CMOS High-k-Dielektrikum Gate-Oxid |
| url | https://onlinelibrary.wiley.com/doi/book/10.1002/9783527646340 |
| work_keys_str_mv | AT hegang highkgatedielectricsforcmostechnology AT sunzhaoqi highkgatedielectricsforcmostechnology |