Growth of GaAs-based nanowires on silicon for optical applications:
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Abschlussarbeit Buch |
Sprache: | English |
Veröffentlicht: |
Garching
Verein zur Förderung des Walter Schottky Inst. der Techn. Univ. München e.V.
2014
|
Ausgabe: | 1.Aufl. |
Schriftenreihe: | Selected topics of semiconductor physics and technology
176 |
Schlagworte: | |
Beschreibung: | VIII, 161 S. Ill., graph. Darst. |
ISBN: | 9783941650763 |
Internformat
MARC
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245 | 1 | 0 | |a Growth of GaAs-based nanowires on silicon for optical applications |c Daniel Rudolph |
250 | |a 1.Aufl. | ||
264 | 1 | |a Garching |b Verein zur Förderung des Walter Schottky Inst. der Techn. Univ. München e.V. |c 2014 | |
300 | |a VIII, 161 S. |b Ill., graph. Darst. | ||
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490 | 1 | |a Selected topics of semiconductor physics and technology |v 176 | |
502 | |a Zugl.: München, Techn. Univ., Diss., 2014 | ||
655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
830 | 0 | |a Selected topics of semiconductor physics and technology |v 176 |w (DE-604)BV011499438 |9 176 | |
999 | |a oai:aleph.bib-bvb.de:BVB01-027221501 |
Datensatz im Suchindex
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any_adam_object | |
author | Rudolph, Daniel |
author_facet | Rudolph, Daniel |
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discipline | Physik Elektrotechnik |
edition | 1.Aufl. |
format | Thesis Book |
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genre_facet | Hochschulschrift |
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institution | BVB |
isbn | 9783941650763 |
language | English |
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physical | VIII, 161 S. Ill., graph. Darst. |
publishDate | 2014 |
publishDateSearch | 2014 |
publishDateSort | 2014 |
publisher | Verein zur Förderung des Walter Schottky Inst. der Techn. Univ. München e.V. |
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series | Selected topics of semiconductor physics and technology |
series2 | Selected topics of semiconductor physics and technology |
spelling | Rudolph, Daniel Verfasser aut Growth of GaAs-based nanowires on silicon for optical applications Daniel Rudolph 1.Aufl. Garching Verein zur Förderung des Walter Schottky Inst. der Techn. Univ. München e.V. 2014 VIII, 161 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Selected topics of semiconductor physics and technology 176 Zugl.: München, Techn. Univ., Diss., 2014 (DE-588)4113937-9 Hochschulschrift gnd-content Selected topics of semiconductor physics and technology 176 (DE-604)BV011499438 176 |
spellingShingle | Rudolph, Daniel Growth of GaAs-based nanowires on silicon for optical applications Selected topics of semiconductor physics and technology |
subject_GND | (DE-588)4113937-9 |
title | Growth of GaAs-based nanowires on silicon for optical applications |
title_auth | Growth of GaAs-based nanowires on silicon for optical applications |
title_exact_search | Growth of GaAs-based nanowires on silicon for optical applications |
title_full | Growth of GaAs-based nanowires on silicon for optical applications Daniel Rudolph |
title_fullStr | Growth of GaAs-based nanowires on silicon for optical applications Daniel Rudolph |
title_full_unstemmed | Growth of GaAs-based nanowires on silicon for optical applications Daniel Rudolph |
title_short | Growth of GaAs-based nanowires on silicon for optical applications |
title_sort | growth of gaas based nanowires on silicon for optical applications |
topic_facet | Hochschulschrift |
volume_link | (DE-604)BV011499438 |
work_keys_str_mv | AT rudolphdaniel growthofgaasbasednanowiresonsiliconforopticalapplications |