Crystal growth of Si for solar cells:
Gespeichert in:
Weitere Verfasser: | |
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Format: | Buch |
Sprache: | English |
Veröffentlicht: |
Berlin [u.a.]
Springer
2009
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Schriftenreihe: | Advances in materials research
14 |
Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis |
Beschreibung: | Literaturangaben |
Beschreibung: | XIV, 255 S. Ill., graph. Darst. |
ISBN: | 9783642020438 |
Internformat
MARC
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245 | 1 | 0 | |a Crystal growth of Si for solar cells |c Kazuo Nakajima ... ed. |
264 | 1 | |a Berlin [u.a.] |b Springer |c 2009 | |
300 | |a XIV, 255 S. |b Ill., graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
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500 | |a Literaturangaben | ||
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Datensatz im Suchindex
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adam_text | CONTENTS 1 FEEDSTOCK EIVIND J. 0VRELID. KAI TANG. THORVALD ENGH, AND
ALERETE TANGSTAD 1.1 INTRODUCTION 1 1.1.1 MAIN SUPPLY ROUTE TODAY 1
1.1.2 IMPURITIES 2 1.2 METALLURGICAL SI 2 1.3 THE SIEMENS PROCESS 4 1.4
REFINING OF SI FOR THE PV APPLICATIONS 5 1.4.1 REMOVAL OF BORON BY
OXIDATION 5 1.4.2 REMOVAL OF BORON BY REACTION WITH WATER VAPOR 11 1.4.3
REMOVAL OF PHOSPHOROUS BY VACUUM TREATMENT 11 1.4.4 REFINING BY
SOLIDIFICATION 13 1.4.5 SOLVENT REFINING 17 1.4.6 REMOVAL OF IMPURITIES
BY LEACHING 18 1.4.7 ELECTROLYSIS/ELECTROCHEMICAL PURIFICATION 20 1.4.8
REMOVAL OF INCLUSIONS BY SETTLING 20 1.4.9 REMOVAL OF INCLUSIONS BY
FILTRATION 21 REFERENCES 22 2 CZOCHRALSKI SILICON CRYSTAL GROWTH FOR
PHOTOVOLTAIC APPLICATIONS CHUNG-WEN LAN. CHAO-KUAN HSIEH, AND WEN-CHIN
HSU 2.1 INTRODUCTION 25 2.2 HOT-ZONE DESIGN 27 2.2.1 POWER AND GROWTH
SPEED 28 2.2.2 INTERFACE SHAPE AND THERMAL STRESS 30 2.2.3 ARGON
CONSUMPTION AND GRAPHITE DEGRADATION 31 2.2.4 YIELD ENHANCEMENT 32 2.3
CONTINUOUS CHARGE 33 2.3.1 MULTIPLE CHARGES 33 2.3.2 COATED CRUCIBLE 35
2.3.3 LARGE SIZE AND CONTINUOUS GROWTH 35 BIBLIOGRAFISCHE INFORMATIONEN
HTTP://D-NB.INFO/994394322 DIGITALISIERT DURCH VIII CONTENTS 2.4 CRYSTAL
QUALITY IMPROVEMENT 36 2.5 CONCLUSIONS AND COMMENTS 37 REFERENCES 38 3
FLOATING ZONE CRYSTAL GROWTH HELGE RIEMANN AND ANKE LUEDGE 3.1 THE FZ
METHOD: ITS STRENGTHS AND WEAKNESSES 41 3.2 SILICON FEED RODS FOR THE FZ
METHOD 48 3.2.1 SIEMENS AND MONOSILANE DEPOSITION PROCESSES 48 3.2.2
GROWTH OF FEED RODS 48 3.2.3 GRANULAR FEED STOCK 48 3.3 DOPING OF FZ
SILICON CRYSTALS 49 3.4 PHYSICAL AND TECHNICAL NEEDS AND LIMITATIONS 49
3.5 GROWTH OF QUADRATIC FZ CRYSTALS (QFZ) 50 3.6 COMMENTS ON THE
POTENTIAL OF FZ SILICON FOR SOLAR CELLS 52 3.7 SUMMARY 52 REFERENCES 52
4 CRYSTALLIZATION OF SILICON BY A DIRECTIONAL SOLIDIFICATION METHOD
KOICHI KAKIMOTO 4.1 DIRECTIONAL SOLIDIFICATION METHOD: STRENGTHS AND
WEAKNESSES 55 4.2 CONTROL OF CRYSTALLIZATION PROCESS 56 4.3
INCORPORATION OF IMPURITY IN CRYSTALS 59 4.4 THREE-DIMENSIONAL EFFECTS
OF SOLIDIFICATION 65 4.5 SUMMARY 66 REFERENCES 68 5 MECHANISM OF
DENDRITE CRYSTAL GROWTH KOZO FUJIWARA AND KAZUO NAKAJIMA 5.1
INTRODUCTION 71 5.2 TWIN-RELATED DENDRITE GROWTH IN SEMICONDUCTOR
MATERIALS 73 5.3 FORMATION MECHANISM OF PARALLEL TWINS DURING MELT
GROWTH PROCESSES 74 5.4 GROWTH MECHANISM OF SI FACETED DENDRITE 77
REFERENCES 81 6 FUNDAMENTAL UNDERSTANDING OF SUBGRAIN BOUNDARIES KENTARO
CONTENTS IX 7 NEW CRYSTALLINE SI RIBBON MATERIALS FOR PHOTOVOLTAICS GISO
HAHN. AXEL SCHOENECKER, AND ASTRID GUTJAHR 7.1 RIBBON GROWTH 97 7.2
DESCRIPTION OF RIBBON GROWTH TECHNIQUES 98 7.2.1 TYPE I 100 7.2.2 TYPE
II 102 7.2.3 COMPARISON OF GROWTH TECHNIQUES 104 7.3 MATERIAL PROPERTIES
AND SOLAR CELL PROCESSING 105 7.3.1 REFRACTORY MATERIALS 105 7.3.2
RIBBON MATERIAL PROPERTIES 107 7.3.3 RIBBON SILICON SOLAR CELLS 109 7.4
SUMMARY 114 REFERENCES 115 8 CRYSTAL GROWTH OF SPHERICAL SI KOSUKE
NAGASHIO AND KAZUHIKO KURIBAYASHI 8.1 HISTORICAL BACKGROUND 121 8.2
CRYSTAL GROWTH FROM UNDERCOOLED MELT 123 8.3 LEVITATION EXPERIMENTS:
POLYCRYSTALLINITY DUE TO FRAGMENTATION OF DENDRITES 125 8.4 SPHERICAL SI
CRYSTAL FABRICATED BY DROP TUBE METHOD 128 8.5 SUMMARY 133 REFERENCES
133 9 LIQUID PHASE EPITAXY ALAIN FAVE 9.1 DESCRIPTION 136 9.2 KINETICS
OF GROWTH 136 9.3 CHOICE OF THE SOLVENT 139 9.3.1 INFLUENCE OF THE
SUBSTRATE SURFACE 140 9.4 EXPERIMENTAL RESULTS 141 9.4.1 GROWTH WITH SN
AND IN SOLVENT IN THE 900-L,050C RANGE 142 9.4.2 DOPING AND ELECTRICAL
PROPERTIES OF EPITAXIAL LAYERS 143 9.5 GROWTH ON MULTICRYSTALLINE SI
SUBSTRATES 145 9.5.1 PHOTOVOLTAIC RESULTS OBTAINED WIT X CONTENTS 10
VAPOR PHASE EPITAXY MUSTAPHA LEMITI 10.1 INTRODUCTION 159 10.2
THEORETICAL ASPECTS OF VPE 161 10.2.1 NOTIONS OF HYDRODYNAMICS 161
10.2.2 KINETICS AND GROWTH REGIMES 162 10.3 EXPERIMENTAL ASPECTS OF VPE
165 10.3.1 EXPERIMENTAL APPROACH OF THE KINETICS AND MECHANISMS OF
SILICON GROWTH IN A SIH 2 CL 2 /H 2 SYSTEM 165 10.3.2 DOPING OF
EPITAXIAL FILMS 168 10.4 EPITAXIAL GROWTH EQUIPMENTS 171 REFERENCES 175
11 THIN-FILM POLY-SI FORMED BY FLASH LAMP ANNEALING KEISUKE OHDAIRA 11.1
INTRODUCTION 177 11.2 FLA EQUIPMENT 177 11.3 THERMAL DIFFUSION LENGTH
178 11.4 THERMAL MODEL OF FLA 180 11.5 CONTROL OF LAMP IRRADIANCE 181
11.6 FLA FOR SOLAR CELL FABRICATION 183 11.7 MICROSTRUCTURE OF THE
POLY-SI FILMS 184 11.8 SUMMARY 189 REFERENCES 189 12 POLYCRYSTALLINE
SILICON THIN-FILMS FORMED BY THE ALUMINUM-INDUCED LAYER EXCHANGE (ALILE)
PROCESS STEFAN GALL 12.1 INTRODUCTION 193 12.2 GENERAL ASPECTS OF THE
ALILE PROCESS 194 12.3 KINETICS OF THE ALILE PROCESS 200 12.4 STRUCTURAL
AND ELECTRICAL PROPERTIES OF THE POLY-SI FILMS 202 12.5 INFLUENCE OF THE
PERMEABLE MEMBRANE 206 12.6 MODEL OF THE ALILE PROCESS 207 12. CONTENTS
XI 13.3 THE KINETIC DATABASE 231 13.3.1 IMPURITY DIFFUSIVITY 231 13.3.2
TYPICAL EXAMPLES 232 13.4 APPLICATION OF THE THERMOCHEMICAL AND KINETIC
DATABASES 237 13.4.1 EFFECT OF SOLUBILITY. DISTRIBUTION COEFFICIENT, AND
STABLE PRECIPITATES IN SOLAR CELL GRADE SILICON 237 13.4.2
SURFACE/INTERFACIAL TENSIONS 241 13.4.3 GRAIN BOUNDARY SEGREGATION OF
IMPURITY IN POLYCRYSTALLINE SILICON 243 13.4.4 DETERMINATION OF THE
DENUDED ZONE WIDTH 245 13.5 CONCLUSIONS 245 REFERENCES 247 INDEX 253
|
any_adam_object | 1 |
author2 | Nakajima, Kazuo |
author2_role | edt |
author2_variant | k n kn |
author_GND | (DE-588)139500154 |
author_facet | Nakajima, Kazuo |
building | Verbundindex |
bvnumber | BV041715801 |
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dewey-ones | 661 - Technology of industrial chemicals 660 - Chemical engineering |
dewey-raw | 661.0683 660.284298 |
dewey-search | 661.0683 660.284298 |
dewey-sort | 3661.0683 |
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discipline | Chemie / Pharmazie Physik |
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illustrated | Illustrated |
indexdate | 2024-07-10T01:03:36Z |
institution | BVB |
isbn | 9783642020438 |
language | English |
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physical | XIV, 255 S. Ill., graph. Darst. |
publishDate | 2009 |
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publisher | Springer |
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series2 | Advances in materials research |
spelling | Crystal growth of Si for solar cells Kazuo Nakajima ... ed. Berlin [u.a.] Springer 2009 XIV, 255 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Advances in materials research 14 Literaturangaben Solarzelle (DE-588)4181740-0 gnd rswk-swf Kristallzüchtung (DE-588)4140616-3 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Kristallisation (DE-588)4033215-9 gnd rswk-swf Kristallwachstum (DE-588)4123579-4 gnd rswk-swf Silicium (DE-588)4077445-4 s Kristallisation (DE-588)4033215-9 s DE-604 Kristallwachstum (DE-588)4123579-4 s Kristallzüchtung (DE-588)4140616-3 s Solarzelle (DE-588)4181740-0 s Nakajima, Kazuo (DE-588)139500154 edt Erscheint auch als Online-Ausgabe 978-3-642-02044-5 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=027162904&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
spellingShingle | Crystal growth of Si for solar cells Solarzelle (DE-588)4181740-0 gnd Kristallzüchtung (DE-588)4140616-3 gnd Silicium (DE-588)4077445-4 gnd Kristallisation (DE-588)4033215-9 gnd Kristallwachstum (DE-588)4123579-4 gnd |
subject_GND | (DE-588)4181740-0 (DE-588)4140616-3 (DE-588)4077445-4 (DE-588)4033215-9 (DE-588)4123579-4 |
title | Crystal growth of Si for solar cells |
title_auth | Crystal growth of Si for solar cells |
title_exact_search | Crystal growth of Si for solar cells |
title_full | Crystal growth of Si for solar cells Kazuo Nakajima ... ed. |
title_fullStr | Crystal growth of Si for solar cells Kazuo Nakajima ... ed. |
title_full_unstemmed | Crystal growth of Si for solar cells Kazuo Nakajima ... ed. |
title_short | Crystal growth of Si for solar cells |
title_sort | crystal growth of si for solar cells |
topic | Solarzelle (DE-588)4181740-0 gnd Kristallzüchtung (DE-588)4140616-3 gnd Silicium (DE-588)4077445-4 gnd Kristallisation (DE-588)4033215-9 gnd Kristallwachstum (DE-588)4123579-4 gnd |
topic_facet | Solarzelle Kristallzüchtung Silicium Kristallisation Kristallwachstum |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=027162904&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
work_keys_str_mv | AT nakajimakazuo crystalgrowthofsiforsolarcells |