Nitride semiconductor light-emitting diodes (LEDs): materials, technologies and applications
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Oxford [u.a.]
Woodhead Publ. Ltd.
2014
|
| Schriftenreihe: | Woodhead publishing series in electronic and optical materials
54 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis Klappentext |
| Beschreibung: | XXVI, 624 S. Ill., graph. Darst. |
| ISBN: | 0857095072 9780081014066 9780857095077 |
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| 245 | 1 | 0 | |a Nitride semiconductor light-emitting diodes (LEDs) |b materials, technologies and applications |c ed. by JianJang Huang ... |
| 264 | 1 | |a Oxford [u.a.] |b Woodhead Publ. Ltd. |c 2014 | |
| 300 | |a XXVI, 624 S. |b Ill., graph. Darst. | ||
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Datensatz im Suchindex
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| adam_text | Contents
ъ
Contributor contact details
xiii
Woodhead Publishing Series in Electronic and
Optical Materials
xvii
Preface
xxiii
Part I Materials and fabrication
1
1
Molecular beam epitaxy (MBE) growth of nitride
semiconductors
3
Q.-D. Zhuang, Lancaster University, UK
. 1
Introduction
3
.2
Molecular beam epitaxial (MBE) growth techniques
4
.3
Plasma-assisted MBE (PAMBE) growth of nitride
epilayers and quantum structures
5
.4
Nitride nanocolumn (NC) materials
12
.5
Nitride nanostructures based on NCs
17
.6
Conclusion
21
.7
References
21
2
Modern metal-organic chemical vapor deposition
(MOCVD) reactors and growing nitride-based
materials
27
F. H. Yang, AIXTRON Taiwan Co Ltd, Taiwan
2.1
Introduction
27
2.2
MOCVD systems
28
2.3
Planetary reactors
35
2.4
Close-coupled showerhead (CCS) reactors
45
2.5
In situ monitoring systems and growing nitride-based materials
54
2.6
Acknowledgements
65
2.7
References
65
©
Woodhead Publishing Limited,
2014
vi
Contents
3 Gallium
nitride (GaN) on sapphire substrates for
visible
LEDs 66
J.-H. Ryou, University of Houston, USA
3.1
Introduction
66
3.2
Sapphire substrates
69
3.3
Strained heteroepitaxial growth on sapphire substrates
77
3.4
Epitaxial overgrowth of GaN on sapphire substrates
81
3.5
GaN growth on non-polar and semi-polar surfaces
86
3.6
Future trends
88
3.7
References
89
4
Gallium nitride (GaN) on silicon substrates for
LEDs 99
M. H.
Kane, Texas A
&
M
University at Galveston, USA and
N.
Arefin, University of Oklahoma, USA
4.1
Introduction
99
4.2
An overview of gallium nitride (GaN) on silicon substrates
100
4.3
Silicon overview
101
4.4
Challenges for the growth of GaN on silicon substrates
104
4.5
Buffer-layer strategies
105
4.6
Device technologies
113
4.7
Conclusion
139
4.8
References
139
5
Phosphors for white
LEDs 144
H. Yamamoto,
formerly of Tokyo University of Technology, Japan
and T. Yamamoto, Ajinomoto Pharmaceuticals Co, Ltd, Japan
5.1
Introduction
144
5.2
Optical transitions of Ce3+ and Eu2+
146
5.3
Chemical composition of representative nitride and
oxynitride phosphors
149
5.4
Compounds activated by Eu2+
150
5.5
Compounds activated by Ce3+
165
5.6
Features of the crystal structure of nitride and
oxynitride phosphors
168
5.7
Features of optical transitions of nitride and
oxynitride phosphors
171
5.8
Conclusion and future trends
175
5.9
Acknowledgements
176
5.10
References
176
6
Fabrication of nitride
LEDs 181
R.-H.
Horno,
D.
-S. Wuu and C.-F. Lin, National
Chung Hsing
University,
Taiwan
and C.-F. Lai, Feng-Chia University,
Taiwan
6.1
Introduction
181
©
Woodhead
Publishing Limited,
2014
Contents
vii
6.2
GaN-based flip-chip
LEDs
and flip-chip technology
183
6.3
GaN FCLEDs with textured micro-pillar arrays
185
6.4
GaN FCLEDs with a geometric sapphire shaping structure
191
6.5
GaN thin-film photonic crystal (PC)
LEDs 198
6.6
PC nano-structures and PC
LEDs 200
6.7
Light emission characteristics of GaN PC TFLEDs
205
6.S Conclusion
211
6.9
References
212
7
Nanostructured
LEDs 216
C.-C. Lin, D. W. Lin, C.-H.
Chiu,
Z.
Y
Li and
Y. P. Lan,
National
Chiao Tung University, Taiwan, J. J. Huang, National Taiwan
University, Taiwan and H.-C. Kuo, National Chiao Tung University,
Taiwan
7.1
Introduction
216
7.2
General mechanisms for growth of gallium nitride
(GaN) related materials
2
Î
8
7.3
General characterization method
223
7.4
Top-down technique for nanostructured
LEDs 225
7.5
Bottom-up technique for GaN nanopillar substrates
prepared by molecular beam epitaxy
240
7.6
Conclusion
245
7.7
References
245
8 Nonpolar
and
semipolar LEDs 250
Y.-R. Wu, National Taiwan University, Taiwan, C.-Y. Huang,
TSMC Solid State Lighting, Ltd, Taiwan, and Y. Zhao and
J. S. Speck, University of California, Santa Barbara, USA
8.1
Motivation: limitations of conventional
с
-plane
LEDs 250
8.2
Introduction to selected
nonpolar
and
semipolar
planes
255
8.3
Challenges in nonpolar and
semipolar
epitaxial growth
263
8.4
Light extraction for nonpolar and
semipolar LEDs 267
8.5
References
270
Part II Performance of nitride
LEDs 277
9
Efficiency droop in gallium indium nitride
(GalnN)/gallium
nitride (GaN)
LEDs 279
D.
S.
Meyaard.
e-B.
Lín,
J.
Сно
and E.
F. Schubert,
Rensselaer
Polytechnic
Institute, USA
9.1
Introduction
279
9.2
Recombination models in
LEDs 281
9.3
Thermal roll-over in gallium indium nitride (GalnN)
LEDs 282
9.4
Auger recombination
284
Woodhead Publishing Limited,
2014
viii
Contents
9.5
High-level injection and the asymmetry of carrier
concentration and mobility
286
9.6
Non-capture of carriers
290
9.7
Polarization fields
291
9.8
Carrier delocalization
291
9.9
Discussion and comparison of droop mechanisms
293
9.10
Methods for overcoming droop
294
9.11
References
298
10
Photonic crystal nitride
LEDs 301
M. D. B.
Charlton, University of Southampton, UK
10.1
Introduction
301
10.2
Photonic crystal (PC) technology
310
10.3
Improving LED extraction efficiency through PC
surface patterning
318
10.4
PC-enhanced light extraction in P-side up
LEDs 322
10.5
Modelling
PC-LEDs 326
10.6
P-side up PC-LED performance
335
10.7
PC-enhanced light extraction in N-side up
LEDs 342
10.8
Summary
350
10.9
Conclusions
352
10.10
References
353
11
Surface plasmon enhanced
LEDs 355
Q.
Hao and
T.
Qiu, Southeast University, China and P. K.
Сни,
City University of Hong Kong, China
11.1
Introduction
355
11.2
Mechanism for plasmon-coupled emission
356
11.3
Fabrication of plasmon-coupled nanostructures
358
11.4
Performance and outlook
363
11.5
Acknowledgements
365
11.6
References
365
12
Nitride
LEDs
based on quantum wells and
quantum dots
368
J. Verma, A. Verma, V. Protasenko, S. M. Islam and
D. Jena, University of Notre Dame, USA
12.1
Light-emitting diodes
(LEDs) 368
12.2
Polarization effects in IH-nitride
LEDs 379
12.3
Current status of
Ш
-nitride
LEDs 390
12.4
Modern LED designs and enhancements
399
12.5
References
400
Woodhead Publishing Limited,
2014
Contents ix
13
Color tunable
LEDs 409
Y.
F.
Cheung,
Ζ.
Ma and H.
W.
Choi, The University of
Hong Kong, People s Republic of China
13.1
Introduction
409
13.2
Initial idea for stacked
LEDs 410
13.3
Second-generation LED stack with inclined sidewalls
412
13.4
Third-generation tightly-integrated chip-stacking approach
417
13.5
Group-addressable pixelated micro-LED arrays
423
13.6
Conclusions
426
13.7
References
427
14
Reliability of nitride
LEDs 428
T.-T. Chen, C.-F. Dai, C.-P. Wang, H.-K.
Fu,
P.-T.
Chou
and
W. Y. Yeh, Industrial Technology Research Institute (ITRI), Taiwan
14.1
Introduction
428
14.2
Reliability testing of nitride
LEDs 428
14.3
Evaluation of LED degradation
431
14.4
Degradation mechanisms
434
14.5
Conclusion
439
14.6
References
440
15
Chip packaging: encapsulation of nitride
LEDs 441
X. Luo and R.
Hu, Huazhong
University of Science and Technology,
People s Republic of China
15.1
F
unctions of LED chip packaging
441
15.2
Basic structure of LED packaging modules
446
15.3
Processes used in LED packaging
449
15.4
Optical effects of gold wire bonding
453
15.5
Optical effects of phosphor coating
456
15.6
Optical effects of freeform lenses
463
15.7
Thermal design and processing of LED packaging
468
15.8
Conclusion
476
15.9
References
476
Part III Applications of nitride
LEDs 483
16
White
LEDs
for lighting applications: the role of
standards
485
R. Kotschenreuther, OSRAM GmbH, Germany
16.1
Generallighting applications
485
16.2
LED terminology
487
16.3
Copying traditional lamps?
490
©
Woodhead Publishing Limited,
2014
x
Contents
16.4
Freedom of choice
491
16.5
Current and future trends
494
16.6
References
495
17
Ultraviolet
LEDs 497
Η.
HiRAYAMA,
RIKEN,
Japan
17.1
Research background of deep ultraviolet (DUV)
LEDs 497
17.2
Growth of low threading dislocation density (TDD)
A1N layers on sapphire
502
17.3
Marked increases in internal quantum efficiency (IQE)
507
17.4
Aluminum gallium nitride (AlGaNVbased DUV-LEDs
fabricated on high-quality aluminum nitride (A1N)
513
17.5
Increase in electron injection efficiency
(EIE)
and
light extraction efficiency (LEE)
521
17.6
Conclusions and future trends
528
17.7
References
530
18
Infrared emitters made from Ill-nitride semiconductors
533
Y. Kotsar and E. Monroy,
CEA-Grenoble, INAC/SP2M/NPSC,
France
18.1
Introduction
533
18.2
High indium (In) content alloys for infrared emitters
534
18.3
Rare-earth (RE) doped gallium nitride (GaN) emitters
536
18.4
Ш
-nitride
materials for intersubband (ISB) optoelectronics
538
18.5
ISB devices
549
18.6
Conclusions
556
18.7
Acknowledgements
557
18.8
References
557
19 LEDs
for liquid crystal display (LCD) backlighting
566
C.-F. Chen, National Central University, Taiwan
19.1
Introduction
566
19.2
Types of LED LCD backlighting units (BLUs)
567
19.3
Technical considerations for optical films and plates
571
19.4
Requirements for LCD BLUs
572
19.5
Advantages and history of LED BLUs
574
19.6
Market trends and technological developments
577
19.7
Optical design
583
19.8
References
593
20 LEDs in
automotive lighting
595
J. D. Bullough, Rensselaer Polytechnic Institute, USA
20.1
Introduction
595
©
Woodhead Publishing Limited,
2014
Contents xi
20.2
Forward lighting
595
20.3
Signal lighting
599
20.4
Human factor issues with
LEDs 599
20.5
Energy and environmental issues
603
20.6
Future trends
603
20.7
Sources of further information and advice
604
20.8
Acknowledgments
604
20.9
References
604
Index
607
Woodhead
Publishing
Limited,
2014
The development of nitride-based light-emitting diodes
(LEDs)
has led to
advancements in high brightness LED technology for solid state lighting, handheld
electronics and advanced
bioengineering
applications. Nitride semiconductor
light-emitting diodes
(LEDs)
reviews fabrication, performance and applications of
this technology that encompass the state-of-the-art material/device development
and practical nitride-based LED design considerations.
Part I reviews the fabrication of nitride semiconductor
LEDs.
Chapters cover
molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metal-
organic chemical vapour deposition (MOCVD) techniques and the growth of
nitride-based materials, and gallium nitride
(CaN)-on-sapphire
and GaN-on-
silicon technologies for
LEDs.
Nanostructured, non-polar and semi-polar nitride-
based
LEDs,
as well as phosphors-coated nitride
LEDs,
are also discussed. Part It
covers the performance of nitride
LEDs
including photonic crystal
LEDs,
surface
plasmon enhanced
LEDs,
colour tuneable
LEDs,
and
LEDs
based on quantum
wells and quantum dots. Further chapters discuss the development of LED
encapsulation technology and the fundamental efficiency droop issues in gallium
indium nitride (GalnIM)
LEDs.
Finally, Part III highlights applications of nitride
LEDs
including liquid crystal display (LCD) backlighting, infra-red emitters, and
automotive lighting.
Nitride semiconductor light-emitting diodes
(LEDs)
is a technical resource for
academics, physicists, materials scientists, electrical engineers, and those working
in the lighting, consumer electronics, automotive, aviation and communications
sectors.
J
і
an
J
an
g
Huang is a Professor at the Department of Electrical Engineering at the
National Taiwan University, Taiwan. Hao-Chung Kuo is a Professor at National
Chiao-Tung University, Taiwan. Shyh-Chiang Shen is an Associate Professor in
the School of Electrical and Computer Engineering at the Georgia Institute of
Technology, USA.
|
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| classification_rvk | UH 5616 UP 3100 ZN 4840 ZN 5040 ZN 8985 |
| ctrlnum | (OCoLC)892161238 (DE-599)BVBBV041643729 |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV041643729 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T01:01:39Z |
| institution | BVB |
| isbn | 0857095072 9780081014066 9780857095077 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-027084476 |
| oclc_num | 892161238 |
| open_access_boolean | |
| owner | DE-11 DE-703 DE-83 DE-898 DE-BY-UBR DE-573 |
| owner_facet | DE-11 DE-703 DE-83 DE-898 DE-BY-UBR DE-573 |
| physical | XXVI, 624 S. Ill., graph. Darst. |
| publishDate | 2014 |
| publishDateSearch | 2014 |
| publishDateSort | 2014 |
| publisher | Woodhead Publ. Ltd. |
| record_format | marc |
| series | Woodhead publishing series in electronic and optical materials |
| series2 | Woodhead publishing series in electronic and optical materials |
| spelling | Nitride semiconductor light-emitting diodes (LEDs) materials, technologies and applications ed. by JianJang Huang ... Oxford [u.a.] Woodhead Publ. Ltd. 2014 XXVI, 624 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Woodhead publishing series in electronic and optical materials 54 Lumineszenzdiode (DE-588)4125154-4 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Nitride (DE-588)4171929-3 gnd rswk-swf Lumineszenzdiode (DE-588)4125154-4 s Nitride (DE-588)4171929-3 s Halbleiter (DE-588)4022993-2 s DE-604 Huang, JianJang Sonstige oth Erscheint auch als Online-Ausgabe 978-0-85709-930-3 Woodhead publishing series in electronic and optical materials 54 (DE-604)BV040604945 54 Digitalisierung UB Bayreuth - ADAM Catalogue Enrichment application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=027084476&sequence=000003&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis Digitalisierung UB Bayreuth - ADAM Catalogue Enrichment application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=027084476&sequence=000004&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA Klappentext |
| spellingShingle | Nitride semiconductor light-emitting diodes (LEDs) materials, technologies and applications Woodhead publishing series in electronic and optical materials Lumineszenzdiode (DE-588)4125154-4 gnd Halbleiter (DE-588)4022993-2 gnd Nitride (DE-588)4171929-3 gnd |
| subject_GND | (DE-588)4125154-4 (DE-588)4022993-2 (DE-588)4171929-3 |
| title | Nitride semiconductor light-emitting diodes (LEDs) materials, technologies and applications |
| title_auth | Nitride semiconductor light-emitting diodes (LEDs) materials, technologies and applications |
| title_exact_search | Nitride semiconductor light-emitting diodes (LEDs) materials, technologies and applications |
| title_full | Nitride semiconductor light-emitting diodes (LEDs) materials, technologies and applications ed. by JianJang Huang ... |
| title_fullStr | Nitride semiconductor light-emitting diodes (LEDs) materials, technologies and applications ed. by JianJang Huang ... |
| title_full_unstemmed | Nitride semiconductor light-emitting diodes (LEDs) materials, technologies and applications ed. by JianJang Huang ... |
| title_short | Nitride semiconductor light-emitting diodes (LEDs) |
| title_sort | nitride semiconductor light emitting diodes leds materials technologies and applications |
| title_sub | materials, technologies and applications |
| topic | Lumineszenzdiode (DE-588)4125154-4 gnd Halbleiter (DE-588)4022993-2 gnd Nitride (DE-588)4171929-3 gnd |
| topic_facet | Lumineszenzdiode Halbleiter Nitride |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=027084476&sequence=000003&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=027084476&sequence=000004&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV040604945 |
| work_keys_str_mv | AT huangjianjang nitridesemiconductorlightemittingdiodesledsmaterialstechnologiesandapplications |