Semiconductor lasers: fundamentals and applications
Gespeichert in:
| Weitere Verfasser: | |
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| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Oxford [u.a.]
Woodhead Publ.
2013
|
| Schriftenreihe: | Woodhead publishing series in electronic and optical materials
33 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis Klappentext |
| Beschreibung: | XXI, 647 S. Ill., graph. Darst. |
| ISBN: | 9780857091215 |
Internformat
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Datensatz im Suchindex
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| adam_text | Contents^
Contributor contact details
xi
Woodhead Publishing Series in Electronic and
Optical Materials
xv
Preface
xix
Part I Fundamentals of semiconductor lasers
1
1
Principles of semiconductor lasers
3
P. Blood, Cardiff University, UK
3
7
16
22
32
34
42
46
49
50
50
2
Photonic crystal lasers
56
Y. Zhang and M.
Lončar,
Harvard University, USA
2.1
Introduction
56
2.2
Lasing threshold of photonic crystal lasers (PhCLs)
60
2.3
Photonic crystal nanobeam lasers
65
2.4
Photonic crystal disk lasers
72
2.5
Conclusion and future trends
74
2.6
Acknowledgements
76
2.7
References
76
©
Woodheed
ОДЯаНпд
Urrtted. 2O13
1.1
Introduction
1.2
The basic laser diode
1.3
Key physical concepts
1.4
Absorption and gain in low dimensional semiconductor
structures
1.5
Recombination processes
1.6
Gain—current relations
1.7
Temperature dependence of threshold current
1.8
Rate equations
1.9
Future trends
1.10
Acknowledgements
1.11
References
vi
Contents
3
High-power semiconductor lasers
81
M. Fallahi,
University of Arizona, USA and
R. Bedford, Air Force Research Laboratory, USA
3.1
Introduction: theory and design concept
81
3.2
Single emitters
92
3.3
Array concept for power scaling
110
3.4
Conclusion and future trends
112
3.5
References
112
4
Semiconductor laser beam combining
121
B. Liu, Oak Ridge National Laboratory, USA, P.
Colet,
Instituto
de Fisica
Interdisciplinary
Sistemas
Complejos,
IFISC (CSIC-UIB), Spain
and
Y. Braiman,
Oak Ridge
National
Laboratory and University of Tennessee, USA
4.1
Introduction to laser beam combining
121
4.2
Experiments on external cavity broad-area laser
diode arrays
125
4.3
Modeling the dynamics of a single-mode semiconductor
laser array in an external cavity
138
4.4
Conclusion
144
4.5
Acknowledgments
145
4.6
References
145
5
Ultrafast pulse generation by semiconductor lasers
149
E. U. Rafailov, University of Dundee, UK and
E. Avrutin, University of York, UK
5.1
Introduction
149
5.2
Gain-switching
150
5.3
Important developments in gain-switched semiconductor
lasers (SLs)
157
5.4
Q-s witching
160
5.5
Mode-locking (ML) in semiconductor lasers: an overview
166
5.6
ТЪе
main predictions of mode-locked laser theory
181
5.7
Important tendencies in optimising the ML laser
performance
187
5.8
Novel mode-locking principles
196
5.9
Overview of applications of mode-locked diode lasers
206
5.10
Conclusion
207
5.11
Acknowledgements
208
5.12
References
208
O
Woodhead Publishing Limited,
2013
Contents
vii
Part II Visible and near-infrared lasers and their applications
219
6
Nonpolar and semipolar group Ill-nitride lasers
221
D. Feezeix, University of New Mexico, USA and
S. Nakamura, University of California,
Santa Barbara, USA
6Л
Introduction
221
6.2
Applications of group Ill-nitride lasers
222
6.3
Introduction to properties of Ill-nitrides
223
6.4
Optical properties of nonpolar and semipolar Ill-nitrides
234
6.5
Substrates, crystal growth and materials issues
241
6.6
Optical waveguides and loss
246
6.7
Fabrication techniques
254
6.8
Nonpolar and semipolar laser history and performance
256
6.9
Future trends
260
6.10
Sources of further information and advice
261
6.11
References
262
7
Advanced self-assembled indium arsenide (InAs)
quantum-dot lasers
272
M. Sugawara, QD Laser, Inc., Japan and The University
of Tokyo, Japan and Y. Arakawa and K.
Tan abe,
The University of Tokyo, Japan
7.1
Introduction
272
7.2
High-density and highly uniform InAs quantum dots
274
7.3
Quantum-dot
Fabry-Pérot (FP)
and distributed-feedback
(DFB) lasers for optical communication
282
7.4
Quantum-dot FP and DFB lasers for high-temperature
application
292
7.5
QD Laser, Inc.
299
7.6
Silicon hybrid quantum-dot lasers
303
7.7
Conclusion
309
7.8
Acknowledgements
309
7.9
References
310
3
Vertical cavity surface emitting lasers (VCSELs)
316
K. D. Choquette, University of Illinois, USA
8.1
Introduction
316
8.2
Device structure
319
viii
Contents
8.3
Vertical
cavity surface emitting laser
(
VCSEL) optical
performance
329
8.4
Conclusion
336
8.5
Acknowledge
ments
337
8.6
References
337
9
Semiconductor disk lasers (VECSELs)
341
J. E.
Hastie,
S.
Calvez
and
M. D.
Dawson,
University of Strathclyde, UK
9.1
Introduction
341
9.2
Principles of operation
342
9.3
Intracavity frequency control
352
9.4
Pulsed operation
367
9.5
Future trends and applications
376
9.6
Sources of further information and advice
378
9.7
References
378
10
Hybrid silicon lasers
394
D. Liang and J. E. Bowers, University of California,
Santa Barbara, USA
10.1
Introduction
394
10.2
Fundamentals of Si lasers
395
10.3
Hybrid Si laser-based photonic integrated circuits
425
10.4
Conclusion
430
10.5
References
431
Part ill Mid- and far-infrared lasers and their applications
439
11
Gallium antimonide (GaSb)-based type-l quantum
well diode lasers: recent development and prospects
441
G. Belenky and L. Shterengas, State University of
New York at Stony Brook, USA, M. V. Kisin,
Ostendo
Technologies, Inc., USA and T. Hosoda, State University
of New York at Stony Brook, USA
11.1
Introduction
441
11.2
Diode lasers operating below
2.5
цгп
448
11.3
Diode lasers for spectral range above
3
μπι
465
©
Woodhead
Publishing Limited,
2СИЗ
Contents ix
11.4 Metamorphic GaSb-based
diode lasers
477
11.5
Acknowledgements
481
11.6
References
481
12
Interband
cascade
(IC)
lasers
487
R. Q.
Yang, University of Oklahoma, USA
12.1
Introduction
487
12.2
Operating principle of
interband
cascade
(1С)
lasers
488
12.3
Early development and challenges
492
12.4
Recent progress and new developments
497
12.5
Future trends and conclusion
503
12.6
Acknowledgments
505
12.7
References
505
13
Terahertz (THz) quantum cascade lasers
514
S.
Barbieri,
University of Paris Diderot and
CNRS,
France and S. Kumar, Lehigh University, USA
13.1
Terahertz quantum cascade laser technology
514
13.2
Waveguides and photonic structures
516
13.3
Stabilisation, microwave modulation and active
mode-locking of terahertz quantum cascade lasers
525
13.4
References
545
14
Whispering gallery mode lasers
551
A. Monakhov and
N.
Sablina, Ioffe Institute, Russia
14.1
Introduction to whispering gallery modes (WGM)
551
14.2
WGM in electrodynamics
555
14.3
Semiconductor WGM lasers
565
14.4
Light extraction from a WGM resonator
572
14_5 Conclusion
574
14.6
Acknowledgements
576
14.7
References
576
15
Tunable mid-infrared laser absorption spectroscopy
579
F. K-TrrrEL and R. Lewicki, Rice University, USA
15.1
Introduction
579
15.2
Laser absorption
spectroscopie
techniques
581
15.3
Quantum-cascade lasers (QCLs) for trace gas detection
595
χ
Contents
15.4
Specific
examples of QCL-based sensor systems
601
15.5
Conclusions and future trends
617
15.6
References
618
Index
631
©
Wbodheed Publishing limited,
2013
Wood head publishing series in electronic and optical materials
Semiconductor lasers have important applications in numerous fields, including
engineering, biology, chemistry and medicine. They form the backbone of the
optical telecommunications infrastructure supporting the internet, and are used
in information storage devices, bar-code scanners, laser printers and many other
everyday products. Semiconductor lasers: fundamentals and applications provides
a comprehensive review of this vital technology.
Part
ł
introduces the fundamentals of semiconductor lasers, beginning with
key principles before going on to discuss photonic crystal
(asers,
high-power
semiconductor lasers and laser beams, and the use of semiconductor lasers in
ultrafast pulse generation. Part II then reviews visible and near-infrared lasers
and their applications.
Nonpolar
and
semipolar
group Ill-nitrtde-based lasers,
advanced self-assembled InAs quantum dot lasers and vertical cavity surface
emitting lasers are all considered, in addition to semiconductor disk and hybrid
silicon lasers. Finally, mid- and far-infrared lasers are the focus of Part III. Topics
covered include GaSb-based type I quantum well diode lasers,
interband
cascade
and terahertz quantum cascade lasers, whispering gallery mode lasers and tunable
mid-infrared laser absorption spectroscopy.
With its distinguished editors and international team of expert contributors,
Semiconductor lasers: fundamentals and applications is a valuable guide for all
those involved in the design, operation and application of these important lasers,
including laser and telecommunications engineers, scientists working in biology
and chemistry, medical practitioners, and academics working in this field.
Alexei
Baranov
is Research Director at
CNRS
and
Eric Tournié
is Professor of
Electrical Engineering and Photonics at the University of
Montpellier,
France. Both
м/огк
at the
Institut d Electronique du
Sud, a
joint research unit of the University
of
Montpellier
and
CNRS.
Wo-ochead Pubdshtng Limited
6©
High Street, Sawston
Cambridge CB22 3H)
ISM
I
Woodhead Publishing
1518
Walnut Street
1100
Philadelphia, PA
19102
USA
www. woodheadpublish
і
ng.com
www.woodheadpublishingonline.com
WP
WOODKfAD
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