Verfügbarkeit: Toward Quantum FinFET

Toward Quantum FinFET:

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Bibliographische Detailangaben
Format:	Elektronisch E-Book
Sprache:	English
Veröffentlicht:	Cham [u.a.] Springer 2013
Schriftenreihe:	Lecture Notes in Nanoscale Science and Technology 17
Schlagworte:	Ingenieurwissenschaften Engineering Optical materials Nanotechnology Physics Quanteneffekt Nanostruktur Nanometerbereich MOS-FET Aufsatzsammlung
Online-Zugang:	TUM01 UBT01 Volltext Abstract
Beschreibung:	1 Online-Ressource
ISBN:	9783319020211
DOI:	10.1007/978-3-319-02021-1

Internformat

MARC


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Datensatz im Suchindex

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adam_text	TOWARD QUANTUM FINFET / : 2013 ABSTRACT / INHALTSTEXT THIS BOOK REVIEWS A RANGE OF QUANTUM PHENOMENA IN NOVEL NANOSCALE TRANSISTORS CALLED FINFETS, INCLUDING QUANTIZED CONDUCTANCE OF 1D TRANSPORT, SINGLE ELECTRON EFFECT, TUNNELING TRANSPORT, ETC. THE GOAL IS TO CREATE A FUNDAMENTAL BRIDGE BETWEEN QUANTUM FINFET AND NANOTECHNOLOGY TO STIMULATE READERS INTEREST IN DEVELOPING NEW TYPES OF SEMICONDUCTOR TECHNOLOGY. ALTHOUGH THE RAPID DEVELOPMENT OF MICRO-NANO FABRICATION IS DRIVING THE MOSFET DOWNSCALING TREND THAT IS EVOLVING FROM PLANAR CHANNEL TO NONPLANAR FINFET, SILICON-BASED CMOS TECHNOLOGY IS EXPECTED TO FACE FUNDAMENTAL LIMITS IN THENEAR FUTURE. THEREFORE, NEW TYPES OF NANOSCALE DEVICES ARE BEING INVESTIGATED AGGRESSIVELY TO TAKE ADVANTAGE OF THE QUANTUM EFFECT IN CARRIER TRANSPORT. THE QUANTUM CONFINEMENT EFFECT OF FINFET AT ROOM TEMPERATURES WAS REPORTED FOLLOWING THE BREAKTHROUGH TO SUB-10NM SCALE TECHNOLOGY IN SILICON NANOWIRES. WITH CHAPTERS WRITTEN BY LEADING SCIENTISTS THROUGHOUT THE WORLD, TOWARD QUANTUM FINFET PROVIDES A COMPREHENSIVE INTRODUCTION TO THE FIELD AS WELL AS A PLATFORM FOR KNOWLEDGE SHARING AND DISSEMINATION OF THE LATEST ADVANCES. AS A ROADMAP TO GUIDE FURTHER RESEARCH IN AN AREA OF INCREASING IMPORTANCE FOR THE FUTURE DEVELOPMENT OF MATERIALS SCIENCE, NANOFABRICATION TECHNOLOGY, AND NANO-ELECTRONIC DEVICES, THE BOOK CAN BE RECOMMENDED FOR PHYSICS, ELECTRICAL ENGINEERING, AND MATERIALS SCIENCE DEPARTMENTS, AND AS A REFERENCE ON MICRO-NANO ELECTRONIC SCIENCE AND DEVICE DESIGN. OFFERS COMPREHENSIVE COVERAGE OF NOVEL NANOSCALE TRANSISTORS WITH QUANTUM CONFINEMENT EFFECT PROVIDES THE KEYS TO UNDERSTANDING THE EMERGING AREA OF THE QUANTUM FINFET WRITTEN BY LEADING EXPERTS IN EACH RESEARCH AREA DESCRIBES A KEY ENABLING TECHNOLOGY FOR RESEARCH AND DEVELOPMENT OF NANOFABRICATION AND NANOELECTRONIC DEVICES DIESES SCHRIFTSTUECK WURDE MASCHINELL ERZEUGT.
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series	Lecture Notes in Nanoscale Science and Technology
series2	Lecture Notes in Nanoscale Science and Technology
spelling	Toward Quantum FinFET Weihua Han ; Zhiming M. Wang, ed. Cham [u.a.] Springer 2013 1 Online-Ressource txt rdacontent c rdamedia cr rdacarrier Lecture Notes in Nanoscale Science and Technology 17 Ingenieurwissenschaften Engineering Optical materials Nanotechnology Physics Quanteneffekt (DE-588)4356922-5 gnd rswk-swf Nanostruktur (DE-588)4204530-7 gnd rswk-swf Nanometerbereich (DE-588)4327473-0 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf 1\p (DE-588)4143413-4 Aufsatzsammlung gnd-content MOS-FET (DE-588)4207266-9 s Nanometerbereich (DE-588)4327473-0 s Quanteneffekt (DE-588)4356922-5 s Nanostruktur (DE-588)4204530-7 s 2\p DE-604 Han, Weihua Sonstige oth Wang, Zhiming M. Sonstige oth Erscheint auch als Druckausgabe 978-3-319-02020-4 Lecture Notes in Nanoscale Science and Technology 17 (DE-604)BV041444080 17 https://doi.org/10.1007/978-3-319-02021-1 Verlag Volltext Springer Fremddatenuebernahme application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=026991989&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Abstract 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk
spellingShingle	Toward Quantum FinFET Lecture Notes in Nanoscale Science and Technology Ingenieurwissenschaften Engineering Optical materials Nanotechnology Physics Quanteneffekt (DE-588)4356922-5 gnd Nanostruktur (DE-588)4204530-7 gnd Nanometerbereich (DE-588)4327473-0 gnd MOS-FET (DE-588)4207266-9 gnd
subject_GND	(DE-588)4356922-5 (DE-588)4204530-7 (DE-588)4327473-0 (DE-588)4207266-9 (DE-588)4143413-4
title	Toward Quantum FinFET
title_auth	Toward Quantum FinFET
title_exact_search	Toward Quantum FinFET
title_full	Toward Quantum FinFET Weihua Han ; Zhiming M. Wang, ed.
title_fullStr	Toward Quantum FinFET Weihua Han ; Zhiming M. Wang, ed.
title_full_unstemmed	Toward Quantum FinFET Weihua Han ; Zhiming M. Wang, ed.
title_short	Toward Quantum FinFET
title_sort	toward quantum finfet
topic	Ingenieurwissenschaften Engineering Optical materials Nanotechnology Physics Quanteneffekt (DE-588)4356922-5 gnd Nanostruktur (DE-588)4204530-7 gnd Nanometerbereich (DE-588)4327473-0 gnd MOS-FET (DE-588)4207266-9 gnd
topic_facet	Ingenieurwissenschaften Engineering Optical materials Nanotechnology Physics Quanteneffekt Nanostruktur Nanometerbereich MOS-FET Aufsatzsammlung
url	https://doi.org/10.1007/978-3-319-02021-1 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=026991989&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
volume_link	(DE-604)BV041444080
work_keys_str_mv	AT hanweihua towardquantumfinfet AT wangzhimingm towardquantumfinfet

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