Poly-SiGe for MEMS-above-CMOS Sensors:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
2014
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| Schriftenreihe: | Springer Series in Advanced Microelectronics
44 |
| Schlagworte: | |
| Online-Zugang: | BTU01 FHA01 FHI01 FHN01 FHR01 FKE01 FRO01 FWS01 FWS02 UBY01 Volltext Inhaltsverzeichnis Abstract |
| Beschreibung: | 1 Online-Ressource (XVI, 199 p.) 144 illus |
| ISBN: | 9789400767997 |
| DOI: | 10.1007/978-94-007-6799-7 |
Internformat
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Datensatz im Suchindex
| DE-BY-FWS_katkey | 1015920 |
|---|---|
| _version_ | 1806174845273112576 |
| adam_text | POLY-SIGE FOR MEMS-ABOVE-CMOS SENSORS
/ GONZALEZ RUIZ, PILAR
: 2014
TABLE OF CONTENTS / INHALTSVERZEICHNIS
ACKNOWLEDGEMENTS
ABSTRACT
SYMBOLS AND ABBREVIATIONS
INTRODUCTION
POLY-SIGE AS PIEZORESISTIVE MATERIAL
DESIGN OF A POLY-SIGE PIEZORESISTIVE PRESSURE SENSOR
THE PRESSURE SENSOR FABRICATION PROCESS
SEALING OF SURFACE MICROMACHINED POLY-SIGE CAVITIES
CHARACTERIZATION OF POLY-SIGE PRESSURE SENSORS
CMOS INTEGRATED POLY-SIGE PIEZORESISTIVE PRESSURE SENSOR
CONCLUSIONS AND FUTURE WORK
APPENDIX A
APPENDIX B
APPENDIX C
APPENDIX D.
DIESES SCHRIFTSTUECK WURDE MASCHINELL ERZEUGT.
POLY-SIGE FOR MEMS-ABOVE-CMOS SENSORS
/ GONZALEZ RUIZ, PILAR
: 2014
ABSTRACT / INHALTSTEXT
POLYCRYSTALLINE SIGE HAS EMERGED AS A PROMISING MEMS
(MICROELECTROMECHANICAL SYSTEMS) STRUCTURAL MATERIAL SINCE IT PROVIDES
THE DESIRED MECHANICAL PROPERTIES AT LOWER TEMPERATURES COMPARED TO
POLY-SI, ALLOWING THE DIRECT POST-PROCESSING ON TOP OF CMOS. THIS
CMOS-MEMS MONOLITHIC INTEGRATION CAN LEAD TO MORE COMPACT MEMS WITH
IMPROVED PERFORMANCE. THE POTENTIAL OF POLY-SIGE FOR MEMS
ABOVE-ALUMINUM-BACKEND CMOS INTEGRATION HAS ALREADY BEEN DEMONSTRATED.
HOWEVER, AGGRESSIVE INTERCONNECT SCALING HAS LED TO THE REPLACEMENT OF
THE TRADITIONAL ALUMINUM METALLIZATION BY COPPER (CU) METALLIZATION, DUE
TO ITS LOWER RESISTIVITY AND IMPROVED RELIABILITY. POLY-SIGE FOR
MEMS-ABOVE-CMOS SENSORS DEMONSTRATES THE COMPATIBILITY OF POLY-SIGE WITH
POST-PROCESSING ABOVE THE ADVANCED CMOS TECHNOLOGY NODES THROUGH THE
SUCCESSFUL FABRICATION OF AN INTEGRATED POLY-SIGE PIEZORESISTIVE
PRESSURE SENSOR, DIRECTLY FABRICATED ABOVE 0.13 M CU-BACKEND CMOS.
FURTHERMORE, THIS BOOK PRESENTS THE FIRST DETAILED INVESTIGATION ON THE
INFLUENCE OF DEPOSITION CONDITIONS, GERMANIUM CONTENT AND DOPING
CONCENTRATION ON THE ELECTRICAL AND PIEZORESISTIVE PROPERTIES OF
BORON-DOPED POLY-SIGE. THE DEVELOPMENT OF A CMOS-COMPATIBLE PROCESS
FLOW, WITH SPECIAL ATTENTION TO THE SEALING METHOD, IS ALSO DESCRIBED.
PIEZORESISTIVE PRESSURE SENSORS WITH DIFFERENT AREAS AND PIEZORESISTOR
DESIGNS WERE FABRICATED AND TESTED. TOGETHER WITH THE PIEZORESISTIVE
PRESSURE SENSORS, ALSO FUNCTIONAL CAPACITIVE PRESSURE SENSORS WERE
SUCCESSFULLY FABRICATED ON THE SAME WAFER, PROVING THE VERSATILITY OF
POLY-SIGE FOR MEMS SENSOR APPLICATIONS. FINALLY, A DETAILED ANALYSIS OF
THE MEMS PROCESSING IMPACT ON THE UNDERLYING CMOS CIRCUIT IS ALSO
PRESENTED
DIESES SCHRIFTSTUECK WURDE MASCHINELL ERZEUGT.
|
| any_adam_object | 1 |
| author | Gonzalez Ruiz, Pilar |
| author_facet | Gonzalez Ruiz, Pilar |
| author_role | aut |
| author_sort | Gonzalez Ruiz, Pilar |
| author_variant | r p g rp rpg |
| building | Verbundindex |
| bvnumber | BV041471099 |
| collection | ZDB-2-ENG |
| ctrlnum | (OCoLC)869827759 (DE-599)BVBBV041471099 |
| dewey-full | 621.3815 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815 |
| dewey-search | 621.3815 |
| dewey-sort | 3621.3815 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1007/978-94-007-6799-7 |
| format | Electronic eBook |
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| id | DE-604.BV041471099 |
| illustrated | Not Illustrated |
| indexdate | 2024-08-01T10:56:00Z |
| institution | BVB |
| isbn | 9789400767997 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-026917241 |
| oclc_num | 869827759 |
| open_access_boolean | |
| owner | DE-Aug4 DE-92 DE-634 DE-859 DE-898 DE-BY-UBR DE-573 DE-861 DE-706 DE-863 DE-BY-FWS DE-862 DE-BY-FWS |
| owner_facet | DE-Aug4 DE-92 DE-634 DE-859 DE-898 DE-BY-UBR DE-573 DE-861 DE-706 DE-863 DE-BY-FWS DE-862 DE-BY-FWS |
| physical | 1 Online-Ressource (XVI, 199 p.) 144 illus |
| psigel | ZDB-2-ENG |
| publishDate | 2014 |
| publishDateSearch | 2014 |
| publishDateSort | 2014 |
| record_format | marc |
| series | Springer Series in Advanced Microelectronics |
| series2 | Springer Series in Advanced Microelectronics |
| spellingShingle | Gonzalez Ruiz, Pilar Poly-SiGe for MEMS-above-CMOS Sensors Springer Series in Advanced Microelectronics Physics Engineering Systems engineering Optical materials Surfaces (Physics) Electronic Circuits and Devices Circuits and Systems Optical and Electronic Materials Nanotechnology and Microengineering Characterization and Evaluation of Materials Ingenieurwissenschaften |
| title | Poly-SiGe for MEMS-above-CMOS Sensors |
| title_auth | Poly-SiGe for MEMS-above-CMOS Sensors |
| title_exact_search | Poly-SiGe for MEMS-above-CMOS Sensors |
| title_full | Poly-SiGe for MEMS-above-CMOS Sensors by Pilar Gonzalez Ruiz, Kristin De Meyer, Ann Witvrouw |
| title_fullStr | Poly-SiGe for MEMS-above-CMOS Sensors by Pilar Gonzalez Ruiz, Kristin De Meyer, Ann Witvrouw |
| title_full_unstemmed | Poly-SiGe for MEMS-above-CMOS Sensors by Pilar Gonzalez Ruiz, Kristin De Meyer, Ann Witvrouw |
| title_short | Poly-SiGe for MEMS-above-CMOS Sensors |
| title_sort | poly sige for mems above cmos sensors |
| topic | Physics Engineering Systems engineering Optical materials Surfaces (Physics) Electronic Circuits and Devices Circuits and Systems Optical and Electronic Materials Nanotechnology and Microengineering Characterization and Evaluation of Materials Ingenieurwissenschaften |
| topic_facet | Physics Engineering Systems engineering Optical materials Surfaces (Physics) Electronic Circuits and Devices Circuits and Systems Optical and Electronic Materials Nanotechnology and Microengineering Characterization and Evaluation of Materials Ingenieurwissenschaften |
| url | https://doi.org/10.1007/978-94-007-6799-7 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=026917241&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=026917241&sequence=000003&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV041461435 |
| work_keys_str_mv | AT gonzalezruizpilar polysigeformemsabovecmossensors AT demeyerkristin polysigeformemsabovecmossensors AT witvrouwann polysigeformemsabovecmossensors |