Bias Temperature Instability for Devices and Circuits:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
2014
|
| Schlagworte: | |
| Online-Zugang: | BTU01 FHA01 FHI01 FHN01 FHR01 FKE01 FRO01 FWS01 FWS02 UBY01 Volltext |
| Beschreibung: | This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime. · Enables readers to understand and model negative bias temperature instability, with an emphasis on dynamics; · Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence; · Explains time dependent defect spectroscopy, as a measurement method that operates on nanoscale MOSFETs; · Introduces new defect model for metastable defect states, nonradiative multiphonon theory and stochastic behavior |
| Beschreibung: | 1 Online-Ressource (XI, 810 p.) 601 illus., 318 illus. in color |
| ISBN: | 9781461479093 |
| DOI: | 10.1007/978-1-4614-7909-3 |
Internformat
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV041470877 | ||
| 003 | DE-604 | ||
| 005 | 20160810 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 131210s2014 |||| o||u| ||||||eng d | ||
| 020 | |a 9781461479093 |9 978-1-4614-7909-3 | ||
| 024 | 7 | |a 10.1007/978-1-4614-7909-3 |2 doi | |
| 035 | |a (OCoLC)865039187 | ||
| 035 | |a (DE-599)BVBBV041470877 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-Aug4 |a DE-92 |a DE-634 |a DE-859 |a DE-898 |a DE-573 |a DE-861 |a DE-706 |a DE-863 |a DE-862 | ||
| 082 | 0 | |a 621.3815 |2 23 | |
| 100 | 1 | |a Grasser, Tibor |d 1970- |e Verfasser |0 (DE-588)136012345 |4 aut | |
| 245 | 1 | 0 | |a Bias Temperature Instability for Devices and Circuits |c edited by Tibor Grasser |
| 264 | 1 | |c 2014 | |
| 300 | |a 1 Online-Ressource (XI, 810 p.) |b 601 illus., 318 illus. in color | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 500 | |a This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime. · Enables readers to understand and model negative bias temperature instability, with an emphasis on dynamics; · Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence; · Explains time dependent defect spectroscopy, as a measurement method that operates on nanoscale MOSFETs; · Introduces new defect model for metastable defect states, nonradiative multiphonon theory and stochastic behavior | ||
| 505 | 0 | |a Introduction -- Characterization, Experimental Challenges -- Advanced Characterization -- Characterization of Nanoscale Devices -- Statistical Properties/Variability -- Theoretical Understanding -- Possible Defects: Experimental -- Possible Defects: First Principles -- Modeling -- Technological Impact -- Silicon dioxides/SiON -- High-k oxides -- Alternative technologies -- Circuits | |
| 650 | 4 | |a Engineering | |
| 650 | 4 | |a System safety | |
| 650 | 4 | |a Electronics | |
| 650 | 4 | |a Systems engineering | |
| 650 | 4 | |a Circuits and Systems | |
| 650 | 4 | |a Semiconductors | |
| 650 | 4 | |a Electronics and Microelectronics, Instrumentation | |
| 650 | 4 | |a Quality Control, Reliability, Safety and Risk | |
| 650 | 4 | |a Ingenieurwissenschaften | |
| 856 | 4 | 0 | |u https://doi.org/10.1007/978-1-4614-7909-3 |x Verlag |3 Volltext |
| 912 | |a ZDB-2-ENG | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-026917019 | ||
| 966 | e | |u https://doi.org/10.1007/978-1-4614-7909-3 |l BTU01 |p ZDB-2-ENG |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1007/978-1-4614-7909-3 |l FHA01 |p ZDB-2-ENG |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1007/978-1-4614-7909-3 |l FHI01 |p ZDB-2-ENG |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1007/978-1-4614-7909-3 |l FHN01 |p ZDB-2-ENG |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1007/978-1-4614-7909-3 |l FHR01 |p ZDB-2-ENG |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1007/978-1-4614-7909-3 |l FKE01 |p ZDB-2-ENG |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1007/978-1-4614-7909-3 |l FRO01 |p ZDB-2-ENG |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1007/978-1-4614-7909-3 |l FWS01 |p ZDB-2-ENG |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1007/978-1-4614-7909-3 |l FWS02 |p ZDB-2-ENG |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1007/978-1-4614-7909-3 |l UBY01 |p ZDB-2-ENG |x Verlag |3 Volltext | |
Datensatz im Suchindex
| DE-BY-FWS_katkey | 1015363 |
|---|---|
| _version_ | 1806174812438003712 |
| any_adam_object | |
| author | Grasser, Tibor 1970- |
| author_GND | (DE-588)136012345 |
| author_facet | Grasser, Tibor 1970- |
| author_role | aut |
| author_sort | Grasser, Tibor 1970- |
| author_variant | t g tg |
| building | Verbundindex |
| bvnumber | BV041470877 |
| collection | ZDB-2-ENG |
| contents | Introduction -- Characterization, Experimental Challenges -- Advanced Characterization -- Characterization of Nanoscale Devices -- Statistical Properties/Variability -- Theoretical Understanding -- Possible Defects: Experimental -- Possible Defects: First Principles -- Modeling -- Technological Impact -- Silicon dioxides/SiON -- High-k oxides -- Alternative technologies -- Circuits |
| ctrlnum | (OCoLC)865039187 (DE-599)BVBBV041470877 |
| dewey-full | 621.3815 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815 |
| dewey-search | 621.3815 |
| dewey-sort | 3621.3815 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1007/978-1-4614-7909-3 |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03730nmm a2200553zc 4500</leader><controlfield tag="001">BV041470877</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20160810 </controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">131210s2014 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781461479093</subfield><subfield code="9">978-1-4614-7909-3</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/978-1-4614-7909-3</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)865039187</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV041470877</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-Aug4</subfield><subfield code="a">DE-92</subfield><subfield code="a">DE-634</subfield><subfield code="a">DE-859</subfield><subfield code="a">DE-898</subfield><subfield code="a">DE-573</subfield><subfield code="a">DE-861</subfield><subfield code="a">DE-706</subfield><subfield code="a">DE-863</subfield><subfield code="a">DE-862</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815</subfield><subfield code="2">23</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Grasser, Tibor</subfield><subfield code="d">1970-</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)136012345</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Bias Temperature Instability for Devices and Circuits</subfield><subfield code="c">edited by Tibor Grasser</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2014</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (XI, 810 p.)</subfield><subfield code="b">601 illus., 318 illus. in color</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime. · Enables readers to understand and model negative bias temperature instability, with an emphasis on dynamics; · Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence; · Explains time dependent defect spectroscopy, as a measurement method that operates on nanoscale MOSFETs; · Introduces new defect model for metastable defect states, nonradiative multiphonon theory and stochastic behavior</subfield></datafield><datafield tag="505" ind1="0" ind2=" "><subfield code="a">Introduction -- Characterization, Experimental Challenges -- Advanced Characterization -- Characterization of Nanoscale Devices -- Statistical Properties/Variability -- Theoretical Understanding -- Possible Defects: Experimental -- Possible Defects: First Principles -- Modeling -- Technological Impact -- Silicon dioxides/SiON -- High-k oxides -- Alternative technologies -- Circuits</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">System safety</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Systems engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Circuits and Systems</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronics and Microelectronics, Instrumentation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Quality Control, Reliability, Safety and Risk</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ingenieurwissenschaften</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/978-1-4614-7909-3</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-ENG</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-026917019</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4614-7909-3</subfield><subfield code="l">BTU01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4614-7909-3</subfield><subfield code="l">FHA01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4614-7909-3</subfield><subfield code="l">FHI01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4614-7909-3</subfield><subfield code="l">FHN01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4614-7909-3</subfield><subfield code="l">FHR01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4614-7909-3</subfield><subfield code="l">FKE01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4614-7909-3</subfield><subfield code="l">FRO01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4614-7909-3</subfield><subfield code="l">FWS01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4614-7909-3</subfield><subfield code="l">FWS02</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4614-7909-3</subfield><subfield code="l">UBY01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV041470877 |
| illustrated | Illustrated |
| indexdate | 2024-08-01T10:55:28Z |
| institution | BVB |
| isbn | 9781461479093 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-026917019 |
| oclc_num | 865039187 |
| open_access_boolean | |
| owner | DE-Aug4 DE-92 DE-634 DE-859 DE-898 DE-BY-UBR DE-573 DE-861 DE-706 DE-863 DE-BY-FWS DE-862 DE-BY-FWS |
| owner_facet | DE-Aug4 DE-92 DE-634 DE-859 DE-898 DE-BY-UBR DE-573 DE-861 DE-706 DE-863 DE-BY-FWS DE-862 DE-BY-FWS |
| physical | 1 Online-Ressource (XI, 810 p.) 601 illus., 318 illus. in color |
| psigel | ZDB-2-ENG |
| publishDate | 2014 |
| publishDateSearch | 2014 |
| publishDateSort | 2014 |
| record_format | marc |
| spellingShingle | Grasser, Tibor 1970- Bias Temperature Instability for Devices and Circuits Introduction -- Characterization, Experimental Challenges -- Advanced Characterization -- Characterization of Nanoscale Devices -- Statistical Properties/Variability -- Theoretical Understanding -- Possible Defects: Experimental -- Possible Defects: First Principles -- Modeling -- Technological Impact -- Silicon dioxides/SiON -- High-k oxides -- Alternative technologies -- Circuits Engineering System safety Electronics Systems engineering Circuits and Systems Semiconductors Electronics and Microelectronics, Instrumentation Quality Control, Reliability, Safety and Risk Ingenieurwissenschaften |
| title | Bias Temperature Instability for Devices and Circuits |
| title_auth | Bias Temperature Instability for Devices and Circuits |
| title_exact_search | Bias Temperature Instability for Devices and Circuits |
| title_full | Bias Temperature Instability for Devices and Circuits edited by Tibor Grasser |
| title_fullStr | Bias Temperature Instability for Devices and Circuits edited by Tibor Grasser |
| title_full_unstemmed | Bias Temperature Instability for Devices and Circuits edited by Tibor Grasser |
| title_short | Bias Temperature Instability for Devices and Circuits |
| title_sort | bias temperature instability for devices and circuits |
| topic | Engineering System safety Electronics Systems engineering Circuits and Systems Semiconductors Electronics and Microelectronics, Instrumentation Quality Control, Reliability, Safety and Risk Ingenieurwissenschaften |
| topic_facet | Engineering System safety Electronics Systems engineering Circuits and Systems Semiconductors Electronics and Microelectronics, Instrumentation Quality Control, Reliability, Safety and Risk Ingenieurwissenschaften |
| url | https://doi.org/10.1007/978-1-4614-7909-3 |
| work_keys_str_mv | AT grassertibor biastemperatureinstabilityfordevicesandcircuits |