Basic parameters of a three-layer electrorefining process for solar grade silicon:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Aachen
Shaker
2013
|
| Schriftenreihe: | Schriftenreihe des IME
33 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XXV, 210 S. Ill., graph. Darst. |
| ISBN: | 9783844021417 |
Internformat
MARC
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| 245 | 1 | 0 | |a Basic parameters of a three-layer electrorefining process for solar grade silicon |c Florian Ruschmann |
| 264 | 1 | |a Aachen |b Shaker |c 2013 | |
| 300 | |a XXV, 210 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
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| 490 | 1 | |a Schriftenreihe des IME |v 33 | |
| 502 | |a Zugl.: Aachen, Techn. Hochsch., Diss., 2013 | ||
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Datensatz im Suchindex
| _version_ | 1804151557490475008 |
|---|---|
| adam_text | CONTENT
EXTENDED ABSTRACT,
1 INTRODUCTION
2 STATE OF THE ART
V^....! ^...
J
..
J
*R....V
2
2.1 METALLIC SILICON AND ITS PROPERTIES
//SYJ*!.?^^,
2
2.2 APPLICATIONS AND RESEARCH INTEREST 4
2.3 PRODUCTION OF METALLURGICAL GRADE SILICON 8
2.4 PRODUCTION OF SEMICONDUCTOR GRADE SILICON (SIEMENS PROCESS) 11
2.5 SILICON SINGLE CRYSTAL PRODUCTION 13
2.5.1 THE CZOCHRALSKI PROCESS 14
2.5.2 THE FLOAT ZONE PROCESS 16
2.S ALTERNATIVE PRODUCTION PROCESSES FOR HIGH-PURITY SILICON 18
2.7 SUMMARY OF THE STATE OF THE ART TECHNOLOGY 24
3 DEVELOPMENT OF AN ALTERNATIVE PRODUCTION PROCESS 25
3.1 BASIC PRINCIPLE OF THE INVESTIGATED PROCESS 25
3.2 DEVELOPMENT OF THE MATERIALS FOR THE THREE LAYERS 26
3.2.1 THE ANODE 26
3.2.2 THE CATHODE 29
3.2.3 THE ELECTROLYTE 29
3.2.3.1 BASIC COMPOSITION OF THE ELECTROLYTE , 29
3.2.3.2 FACTSAGE* CALCULATIONS OF DISSOLUTION POTENTIALS OF VARIOUS
OXIDE COMPOUNDS 30
3.2.3.3 PHASE SEPARATION BETWEEN ELECTROLYTE AND CATHODE 33
3.2.3.4 DSC MEASUREMENTS OF THE SELECTED ELECTROLYTE SYSTEMS 38
3.2.3.5 THEORETICAL CALCULATIONS OF ELECTROLYTE PROPERTIES WITH
SCIGLASS* 42
3.3 DEVELOPMENT OF A STABLE REFRACTORY MATERIAL FOR THE 3-LAYER
ELECTROLYSIS PROCESS... 43
3.3.1 EXPERIMENTAL SETUP FOR REFRACTORY TESTING 43
3.3.2 RESULTS OF THE REFRACTORY TESTING 45
3.3.3 SUMMARY OF THE REFRACTORY TESTS 49
3.3.4 IDENTIFICATION OF A SUITABLE ELECTRODE MATERIAL 51
4 ELECTROCHEMICAL CHARACTERIZATION OF THE DESIGNED PROCESS 53
4.1 ELECTROCHEMICAL CHARACTERIZATION OF THE ELECTROLYTE SYSTEMS 53
4.1.1 BASIC EXPERIMENTAL SETUP FOR THE ELECTROCHEMICAL MEASUREMENTS
...53
4.1.2 LINEAR SWEEP VOLTAMMETRY MEASUREMENTS 54
4.1.3 CYCLIC VOLTAMMETRY 57
CONTENT
4.1.4 CHRONOARNPEROMETRY 62
4.1.5 ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY 68
4.1.6 ADDITIONAL ELECTROCHEMICAL MEASUREMENTS 73
4.1.7 SUMMARY OF THE ELECTROCHEMICAL CHARACTERIZATION OF THE
ELECTROLYTES 77
4.2 ELECTROCHEMICAL CHARACTERIZATION OF THE ANODE 78
4.2.1 EXPERIMENTAL SETUP FOR THE ELECTROCHEMICAL INVESTIGATION OF THE
ANODE 79
4.2.2 LINEAR SWEEP VOLTAMMETRY MEASUREMENTS IN THE ANODE 80
4.2.3 CHRONOAMPEROMETRIC MEASUREMENTS IN THE ANODE 81
4.2.4 SUMMARY OF THE ELECTROCHEMICAL MEASUREMENTS IN THE ANODE 86
4.3 ELECTROCHEMICAL INVESTIGATION OF THE ANODE-ELECTROLYTE INTERFACE 87
4.3.1 EXPERIMENTAL SETUP FOR INVESTIGATING THE ANODE-ELECTROLYTE
INTERFACE 87
4.3.2 TWO-ELECTRODE MEASUREMENTS OVER THE ANODE-ELECTROLVTE INTERFACE 90
4.3.3 THREE-ELECTRODE MEASUREMENTS OVER THE ANODE-ELECTROLYTE INTERFACE
93
4.3.4 SUMMARY OF THE INVESTIGATION OF THE ANODE-ELECTROLYTE INTERFACE
.....98
4.4 ELECTROCHEMICAL INVESTIGATION OF THE ELECTROLYTE-CATHODE INTERFACE
99
4.4.1 REACTIONS OVER THE ELECTROLYTE-CATHODE INTERFACE IN CURRENTLESS
STATE 99
4.4.2 THREE-ELECTRODE MEASUREMENTS OVER THE ELECTROLYTE-CATHODE
INTERFACE 101
4.4.3 SUMMARY OF THE INVESTIGATION OF THE ELECTROLYTE-CATHODE INTERFACE
106
4.5 CONCLUSIONS OF THE RESULTS OF THE INVESTIGATED TWO-LAYER SYSTEMS 106
5 ESTIMATED MATERIAL FLOW IN AN UPSCALED THREE-LAYER PROCESS 108
6 SUMMARY AND OUTLOOK ILL
7 REFERENCES 114
8 APPENDIX 130
8.1 BASICS OF ELECTROCHEMICAL METAL REFINING 130
8,1.1 BASICS OF ELECTROCHEMISTRY ,. 130
8.1 2 THREE-LAYER ELECTROREFINING OF ALUMINIUM 130
8.1.3 ELECTROCHEMICAL MEASUREMENT SYSTEMS 132
8.1.3.1 LINEAR SWEEP VOLTAMMETRY 134
8.1.3.2 CYCLIC VOLTAMMETRY 137
8.1.3.3 CHRONOAMPEROMETRY 140
8.1.3.4 ELECTROCHEMICAL IMPEDANCE SPECTROSCOPY 142
8.1.3.5 5UMMARY OF ELECTROCHEMICAL MEASUREMENT METHODS 149
8.1 4 APPLIED ELECTROCHEMICAL MEASUREMENT METHODS IN THIS THESIS 150
CONTENT
8.2 DERIVATION OF GIVEN IMPEDANCE EQUATIONS. 151
8.2.1 DERIVATION OF THE ENTIRE IMPEDANCE FOR A PARALLEL CIRCUIT OF
RESISTOR AND CAPACITOR 151
8.2.2 IMPEDANCE EQUATIONS OF THE RANDIES CELL 152
8.2.3 DERIVATION OF (J,
NM
Z IN THE NYQUIST PLOT FOR A RANDIES CELL 152
8.3 DETERMINATION OF THE MAXIMUM INTAKE CAPACITY OF AI2O3 OF
ELECTROLYTEL 153
8.4 SEM-EDX ANALYSIS OF THE SOLIDIFIED ELECTROLYTE_L IN AI
2
Q
3
CRUCIBLES 155
8.5 PRESENTATION OF UNSUITABLE REFRACTORY MATERIALS 156
8.6 CONTACT ANGLE MEASUREMENTS 166
8.6.1 CONTACT ANGLE MEASUREMENTS BETWEEN LIQUID SILICON AND TIB
2
+BN 166
8.6.2 CONTACT ANGLE MEASUREMENTS BETWEEN THE LIQUID ANODE AND GRAPHITE
168
8.7 SENSITIVITY ANALYSIS OF THE DIFFUSION COEFFICIENT OF SILICON IONS IN
ELECTROLYTEL 170
8.8 ELECTROCHEMICAL MEASUREMENT RESULTS FOR ELECTROLYTE_2 TO
ELECTROLYTE_5... 171
8.8.1 ELECTROLYTE_2 171
8.8.2 ELECTROLYTE _3 .....175
8.8.3 ELECTROLYTE_4 179
8.8.4 ELECTROLYTE_5 183
8.9 FURTHER INVESTIGATION OF THE STATED REDUCTION REACTION (1) IN CYCLIC
VOLTAMMETRY
MEASUREMENTS 187
8.10 DETERMINATION OF ASSOCIATED ELECTRICAL CHARGE FOR REDUCTION PEAK
(1) IN CYCLIC
VOLTAMMETRY MEASUREMENT IN FIGURE 43 190
8.11 DEFINITION OF CHARACTERISTIC ELECTRICAL RESISTANCE R 191
8.12 BINARY PHASE DIAGRAM OF THE SILICON-PLATINUM SYSTEM 192
8.13 EXPERIMENTAL SETUP (THREE-ELECTRODES) FOR INVESTIGATING THE
ANODE-ELECTROLYTE
INTERFACE 193
8.14 ADDITIONAL MEASUREMENTS OVER THE ANODE-ELECTROLYTE INTERFACE 194
8.15 5EM-EDX ANALYSIS OF THE TOP LAYER ON THE ELECTROLYTE AFTER
CHRONOPOTENTIOMETRIC
EXPERIMENT OVER THE ANODE-ELECTROLYTE INTERFACE 195
8.16 ADDITIONAL MEASUREMENTS OVER THE ELECTROLYTE-CATHODE INTERFACE 199
8.17 LIST OF FIGURES 200
8.18 LIST OF TABLES 206
|
| any_adam_object | 1 |
| author | Ruschmann, Florian |
| author_GND | (DE-588)103849771X |
| author_facet | Ruschmann, Florian |
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| dewey-search | 661.0683 |
| dewey-sort | 3661.0683 |
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| discipline | Chemie / Pharmazie |
| format | Thesis Book |
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| spelling | Ruschmann, Florian Verfasser (DE-588)103849771X aut Basic parameters of a three-layer electrorefining process for solar grade silicon Florian Ruschmann Aachen Shaker 2013 XXV, 210 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Schriftenreihe des IME 33 Zugl.: Aachen, Techn. Hochsch., Diss., 2013 Reinststoff (DE-588)4177599-5 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Elektrolytische Raffination (DE-588)4263576-7 gnd rswk-swf Herstellung (DE-588)4159653-5 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Silicium (DE-588)4077445-4 s Reinststoff (DE-588)4177599-5 s Herstellung (DE-588)4159653-5 s Elektrolytische Raffination (DE-588)4263576-7 s DE-604 Schriftenreihe des IME 33 (DE-604)BV016981907 33 SWB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=026886148&sequence=000003&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Ruschmann, Florian Basic parameters of a three-layer electrorefining process for solar grade silicon Schriftenreihe des IME Reinststoff (DE-588)4177599-5 gnd Silicium (DE-588)4077445-4 gnd Elektrolytische Raffination (DE-588)4263576-7 gnd Herstellung (DE-588)4159653-5 gnd |
| subject_GND | (DE-588)4177599-5 (DE-588)4077445-4 (DE-588)4263576-7 (DE-588)4159653-5 (DE-588)4113937-9 |
| title | Basic parameters of a three-layer electrorefining process for solar grade silicon |
| title_auth | Basic parameters of a three-layer electrorefining process for solar grade silicon |
| title_exact_search | Basic parameters of a three-layer electrorefining process for solar grade silicon |
| title_full | Basic parameters of a three-layer electrorefining process for solar grade silicon Florian Ruschmann |
| title_fullStr | Basic parameters of a three-layer electrorefining process for solar grade silicon Florian Ruschmann |
| title_full_unstemmed | Basic parameters of a three-layer electrorefining process for solar grade silicon Florian Ruschmann |
| title_short | Basic parameters of a three-layer electrorefining process for solar grade silicon |
| title_sort | basic parameters of a three layer electrorefining process for solar grade silicon |
| topic | Reinststoff (DE-588)4177599-5 gnd Silicium (DE-588)4077445-4 gnd Elektrolytische Raffination (DE-588)4263576-7 gnd Herstellung (DE-588)4159653-5 gnd |
| topic_facet | Reinststoff Silicium Elektrolytische Raffination Herstellung Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=026886148&sequence=000003&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV016981907 |
| work_keys_str_mv | AT ruschmannflorian basicparametersofathreelayerelectrorefiningprocessforsolargradesilicon |