Device characterization and modeling of large-size GaN HEMTs:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Kassel
Kassel Univ. Press
2012
|
| Schlagworte: | |
| Online-Zugang: | Kurzbeschreibung Inhaltsverzeichnis |
| Beschreibung: | Zusätzliches Online-Angebot unter http://nbn-resolving.de/urn:nbn:de:0002-33651 |
| Beschreibung: | XXXIII, 221 S. Ill., graph. Darst. |
| ISBN: | 9783862193646 |
Internformat
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| 245 | 1 | 0 | |a Device characterization and modeling of large-size GaN HEMTs |c Jaime Alberto Zamudio Flores |
| 264 | 1 | |a Kassel |b Kassel Univ. Press |c 2012 | |
| 300 | |a XXXIII, 221 S. |b Ill., graph. Darst. | ||
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Datensatz im Suchindex
| _version_ | 1804151503832743936 |
|---|---|
| adam_text | IMAGE 1
INDEX OF CONTENTS
LIST O F FIGURES VIII
LIST O F TABLES XIX
LIST O F SYMBOLS XX
LIST O F ABBREVIATIONS AND ACRONYMS X X V
ABSTRACT XXVII
ZUSAMMENFASSUNG XXX
CHAPTER 1 INTRODUCTION 1
1.1 ELEMENTS O F THE U M T S TECHNOLOGY 2
1.2 TRANSISTORS WITH WIDE-BANDGAP SEMICONDUCTORS FOR U M T S 4
1.3 TRANSISTOR MODELING FOR P O W E R AMPLIFIER DESIGN 4
1.3.1 PROPOSED TYPE O F MODELING 5
1.3.2 CHALLENGES O F MODELING TRANSISTORS O F WIDE-BANDGAP
SEMICONDUCTORS 7
1.3.3 CHALLENGES O F MODELING ADVANCED LARGE-SIZE TRANSISTORS
FOR HIGH-POWER AMPLIFIERS 7
1.4 MAIN OBJECTIVES O F THE RESEARCH WORK 8
1.5 OUTLINE O F THE THESIS 9
CHAPTER 2 G A N H E M T S FOR U M T S POWER AMPLIFIERS 11
2.1 G A N H E M T S COMPARED WITH DEVICES O F OTHER SEMICONDUCTORS
FOR U M T S P O W E R AMPLIFIERS 11
2.1.1 G A N COMPARED WITH GAAS, SI AND SIC 11
2.1.2 G A N COMPARED WITH SIC 12
2.1.3 G A N H E M T S COMPARED WITH L D M O S FETS O F SI 13
2.2 PHYSICAL STRUCTURE AND OPERATION O F ALGAN/GAN H E M T S 15
2.2.1 BASIC LAYER STRUCTURE AND BAND DIAGRAM 15
2.2.2 FORMATION O F THE 2 D E G 16
2.2.3 FUNCTIONAL DESCRIPTION O F ADVANCED LAYER STRUCTURES 18
2.3 DRAWBACKS O F G A N H E M T S AND MODELING CHALLENGES 2 2
2.3.1 CHARGE-TRAPPING INDUCED DISPERSION 22
2.3.1.1 DEFINITION O F DISPERSION AND ATTRIBUTED EFFECTS 2 2
2.3.1.2 TRAPPING DUE TO THE NOVELTY O F G A N TECHNOLOGY ... 2 4
2.3.1.3 TRAPPING DUE TO THE NONNATIVE SUBSTRATE 2 5
I V
HTTP://D-NB.INFO/102535799X
IMAGE 2
2.3.2 PARASITIC EFFECTS O F G A N DEVICES 2 5
2.3.3 SELF-HEATING EFFECTS ON G A N DEVICES 2 6
CHAPTER 3 DEVICE CHARACTERIZATION FOR MODELING 2 8
3.1 MANUFACTURERS AND TECHNOLOGY O F THE STUDIED DEVICES 2 8
3.2 DATA ACQUISITION FOR MODELING 3 0
3.2.1 STATIC-DC I V MEASUREMENTS 31
3.2.1.1 DESCRIPTION 31
3.2.1.2 MEASUREMENT TECHNIQUES AND SETUP 32
3.2.1.3 MEASURED RESULTS 33
3.2.2 S-PARAMETER MEASUREMENTS 35
3.2.2.1 DESCRIPTION 35
3.2.2.2 MEASUREMENT TECHNIQUES AND SETUP 37
3.2.2.3 MEASURED RESULTS 3 9
3.2.3 PULSED-DC MEASUREMENTS 4 4
3.2.3.1 DESCRIPTION 4 4
3.2.3.2 MEASUREMENT TECHNIQUES AND SETUP 4 6
3.2.3.3 RESULTS ON PASSIVE QUIESCENT BIAS POINTS 53
3.2.3.4 RESULTS O F ACTIVE QUIESCENT BIAS POINTS 5 6
3.3 LARGE-SIGNAL CHARACTERIZATION FOR MODEL VERIFICATION 5 9
3.3.1 DESCRIPTION 5 9
3.3.2 MEASUREMENT SETUPS 6 0
CHAPTER 4 PROPOSED STRATEGY FOR SMALL-SIGNAL MODELING 62
4.1 SMALL-SIGNAL ELECTRICAL EQUIVALENT CIRCUIT 62
4.1.1 PHYSICAL MEANING O F THE CIRCUIT ELEMENTS 63
4.1.2 PHYSICAL MEANING O F THE EXTRINSIC CAPACITANCE PARAMETERS .. 6 5
4.2 EXTRINSIC PARAMETER EXTRACTION 72
4.2.1 ANALYSIS O F THE GENERATION O F CAPACITANCE RATIO VALUES IN
THE T E C R ALGORITHM 74
4.2.2 PROPOSED GENERATION O F CAPACITANCE RATIO VALUES 89
4.2.3 EQUATION SYSTEM O F CAPACITANCE PARAMETERS IN PINCH-OFF.... 9 5
4.2.4 SWEEPS O F VALUES ON CAPACITANCE PARAMETERS 9 7
4.2.5 EXTRACTION O F EXTRINSIC RESISTANCE PARAMETERS 107
4.3 INTRINSIC PARAMETER EXTRACTION 114
4.4 SCALABILITY O F THE SMALL-SIGNAL MODEL 118
4.4.1 SCALING RULES IN TERMS O F THE GATE ELECTRODE WIDTH 118
V
IMAGE 3
4.4.2 SCALING RULES IN TERMS O F THE GATE ELECTRODE N U M B E R 1 1 9
CHAPTER 5 RESULTS O F SMALL-SIGNAL MODELING 122
5.1 RESULTS O F EXTRINSIC PARAMETER EXTRACTION 122
5.1.1 OPTIMAL FREQUENCY RANGE O F THE EXTRACTION 122
5.1.2 STARTING AND OPTIMIZED VALUES O F T H E EXTRINSIC PARAMETERS.. 124
5.2 RESULTS O F INTRINSIC PARAMETER EXTRACTION 126
5.2.1 FREQUENCY AND BIAS DEPENDENCY O F INTRINSIC PARAMETERS 126
5.2.2 VERIFICATION TESTS WITH S-PARAMETERS ON ACTIVE BIAS POINTS. 132
5.3 SMALL-SIGNAL MODEL SCALABILITY 137
5.3.1 EXTRACTED PARAMETER VALUES FOR DIFFERENT DEVICE SIZES 138
5.3.2 SCALABILITY O F MODEL PARAMETERS IN TERMS O F VTY 140
5.3.3 SCALABILITY O F MODEL PARAMETERS IN TERMS O F N / 146
5.3.4 TESTS O F THE SCALING RULES 148
5.3.4.1 TESTS O F SCALABILITY FOR W/-SCALED MODELS 149
5.3.4.2 TESTS O F SCALABILITY FOR QUASI-SCALED MODELS 151
5.3.4.3 TESTS O F SCALABILITY FOR TWO-STEP S C A L E D MODELS 153
CHAPTER 6 PROPOSED STRATEGY FOR LARGE-SIGNAL MODELING 156
6.1 LARGE-SIGNAL MODELING WITH ELECTRICAL EQUIVALENT CIRCUITS 156
6.2 NON-QUASI-STATIC CHARGE MODELING 157
6.2.1 LARGE-SIGNAL CHARGE SOURCES 159
6.2.2 LARGE-SIGNAL CURRENT SOURCES O F THE GATE DIODES 167
6.3 MODELING O F I DS 169
6.3.1 DEFINITIONS AND ASSUMPTIONS O F THE ADOPTED IJ S M O D E L 170
6.3.2 ELECTRO-THERMAL MODELING 173
6.4 MEASUREMENT-BASED EXTRACTION O F / (/S-MODEL PARAMETERS 175
6.4.1 EXTRACTION O F THE PARAMETERS L J S O , F G AND F D 175
6.4.2 EXTRACTION O F THE PARAMETERS F T , AND F P 177
6.4.3 EXTRACTION O F TRAPPING AND THERMAL TIME CONSTANTS 181
CHAPTER 7 LARGE-SIGNAL MODELING VERIFICATION 188
7.1 LARGE-SIGNAL MODEL IMPLEMENTATION 188
7.2 TESTS O F LARGE-SIGNAL MODEL VERIFICATION 190
7.2.1 VERIFICATION TESTS WITH S-PARAMETERS 191
7.2.2 PULSED-DC IV VERIFICATION TESTS 193
V I
IMAGE 4
7.2.3 VERIFICATION TESTS WITH SINGLE-TONE AND TWO-TONE STIMULI. 195
CHAPTER 8 CONCLUSIONS AND FUTURE W O R K 203
8.1 CONCLUSIONS FROM THE RESEARCH RESULTS 203
8.2 OUTLOOK O F FUTURE WORK 208
REFERENCES 2 1 0
V I I
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| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
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| spelling | Zamudio Flores, Jaime Alberto 1979- Verfasser (DE-588)1025516931 aut Device characterization and modeling of large-size GaN HEMTs Jaime Alberto Zamudio Flores Kassel Kassel Univ. Press 2012 XXXIII, 221 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Zusätzliches Online-Angebot unter http://nbn-resolving.de/urn:nbn:de:0002-33651 Zugl.: Kassel, Univ., Diss., 2012 Großsignalverhalten (DE-588)4158301-2 gnd rswk-swf HEMT (DE-588)4211873-6 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Galliumnitrid (DE-588)4375592-6 s HEMT (DE-588)4211873-6 s Großsignalverhalten (DE-588)4158301-2 s DE-604 Erscheint auch als Online-Ausgabe 978-3-86219-365-3 X:MVB text/html http://www.uni-kassel.de/hrz/db4/extern/dbupress/publik/abstract.php?978-3-86219-364-6 Kurzbeschreibung DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=026846847&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Zamudio Flores, Jaime Alberto 1979- Device characterization and modeling of large-size GaN HEMTs Großsignalverhalten (DE-588)4158301-2 gnd HEMT (DE-588)4211873-6 gnd Galliumnitrid (DE-588)4375592-6 gnd |
| subject_GND | (DE-588)4158301-2 (DE-588)4211873-6 (DE-588)4375592-6 (DE-588)4113937-9 |
| title | Device characterization and modeling of large-size GaN HEMTs |
| title_auth | Device characterization and modeling of large-size GaN HEMTs |
| title_exact_search | Device characterization and modeling of large-size GaN HEMTs |
| title_full | Device characterization and modeling of large-size GaN HEMTs Jaime Alberto Zamudio Flores |
| title_fullStr | Device characterization and modeling of large-size GaN HEMTs Jaime Alberto Zamudio Flores |
| title_full_unstemmed | Device characterization and modeling of large-size GaN HEMTs Jaime Alberto Zamudio Flores |
| title_short | Device characterization and modeling of large-size GaN HEMTs |
| title_sort | device characterization and modeling of large size gan hemts |
| topic | Großsignalverhalten (DE-588)4158301-2 gnd HEMT (DE-588)4211873-6 gnd Galliumnitrid (DE-588)4375592-6 gnd |
| topic_facet | Großsignalverhalten HEMT Galliumnitrid Hochschulschrift |
| url | http://www.uni-kassel.de/hrz/db4/extern/dbupress/publik/abstract.php?978-3-86219-364-6 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=026846847&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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