Raman effect in silicon-on-insulator nanowire waveguides:
Gespeichert in:
1. Verfasser: | |
---|---|
Format: | Abschlussarbeit Buch |
Sprache: | English |
Veröffentlicht: |
Berlin
Mensch-und-Buch-Verl.
2013
|
Schriftenreihe: | Physics
|
Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis |
Beschreibung: | II, 210 S. Ill., graph. Darst. |
ISBN: | 9783863873516 |
Internformat
MARC
LEADER | 00000nam a2200000 c 4500 | ||
---|---|---|---|
001 | BV041272147 | ||
003 | DE-604 | ||
005 | 20131125 | ||
007 | t | ||
008 | 130916s2013 gw ad|| m||| 00||| eng d | ||
015 | |a 13,N36 |2 dnb | ||
016 | 7 | |a 1038803810 |2 DE-101 | |
020 | |a 9783863873516 |9 978-3-86387-351-6 | ||
024 | 3 | |a 9783863873516 | |
028 | 5 | 2 | |a Best.-Nr.: 863873516 |
035 | |a (OCoLC)915034074 | ||
035 | |a (DE-599)DNB1038803810 | ||
040 | |a DE-604 |b ger |e rakddb | ||
041 | 0 | |a eng | |
044 | |a gw |c XA-DE-BE | ||
049 | |a DE-83 | ||
082 | 0 | |a 537.6226 |2 22/ger | |
084 | |a VG 9307 |0 (DE-625)147238:260 |2 rvk | ||
084 | |a 530 |2 sdnb | ||
100 | 1 | |a Mahdi, Shaimaa |e Verfasser |0 (DE-588)1041845340 |4 aut | |
245 | 1 | 0 | |a Raman effect in silicon-on-insulator nanowire waveguides |c Shaimaa Mahdi |
264 | 1 | |a Berlin |b Mensch-und-Buch-Verl. |c 2013 | |
300 | |a II, 210 S. |b Ill., graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 0 | |a Physics | |
502 | |a Zugl.: Berlin, Techn. Univ., Diss., 2013 | ||
650 | 0 | 7 | |a Stimulierter Raman-Effekt |0 (DE-588)4299534-6 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a SOI-Technik |0 (DE-588)4128029-5 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Nanodraht |0 (DE-588)4707308-1 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Lichtwellenleiter |0 (DE-588)4267405-0 |2 gnd |9 rswk-swf |
655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
689 | 0 | 0 | |a Lichtwellenleiter |0 (DE-588)4267405-0 |D s |
689 | 0 | 1 | |a Nanodraht |0 (DE-588)4707308-1 |D s |
689 | 0 | 2 | |a SOI-Technik |0 (DE-588)4128029-5 |D s |
689 | 0 | 3 | |a Stimulierter Raman-Effekt |0 (DE-588)4299534-6 |D s |
689 | 0 | |5 DE-604 | |
856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=026245739&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
999 | |a oai:aleph.bib-bvb.de:BVB01-026245739 |
Datensatz im Suchindex
_version_ | 1804150738715148288 |
---|---|
adam_text | CONTENTS
CH-1 INTRODUCTION 13
1.1 BACKGROUND AND MOTIVATION 13
1.2 OUTLINE OF THESIS 18
CH-2 RAMAN EMISSION IN SILICON WAVEGUIDES 19
2.1 THE RAMAN EFFECT . 21
2.2 STIMULATED RAMAN EFFECT 22
2.3 SILICON WAVEGUIDES 23
2.4 THIRD ORDER SUSCEPTIBILITY : 34
2.5 STIMULATED RAMAN SCATTERING IN SILICON WAVEGUIDES 38
2.6 RAMAN AMPLIFICATION IN SILICON WAVEGUIDES
:
47
2.7 NONLINEAR ABSORPTION IN SILICON WAVEGUIDES 51
2.8 CARRIER LIFETIME IN SILICON WAVEGUIDES 53
2.9 PRINCIPLE THEORY OF A P-I-N DIODE 58
2.10 SUMMARY 63
CH-3 FACET PREPARATION OF STRIP SILICON NANOWIRE WAVEGUIDES 65
3.1 POLISHING TECHNIQUE 68
3.2 CLEAVING AFTER SCORING BY A MECHANICAL SAW 69
3.3 CLEAVING AFTER SCORING BY FS-LASER ; 71
3.4 RESULTS OF CLEAVING BY FS-LASER 75
3.5 OPTICAL CHARACTERIZATION OF THE END-FACET OF SILICON WAVEGUIDES : 86
3.6 SUMMARY 92
SPONTANEOUS RAMAN SCATTERING AND RAMAN GAIN IN NANOWIRE PASSIVE SILICON
CH-4 93
WAVEGUIDES
4.1 INTRODUCTION ; 93
4.2 THE SOI WAVEGUIDES 94
I
HTTP://D-NB.INFO/1038803810
4.3 SPONTANEOUS RAMAN SCATTERING IN PLANAR WAVEGUIDES
4.4 CALCULATION OF EFFECTIVE AREA OF THE SI WAVEGUIDES
4.5 RAMAN SCATTERING EFFICIENCY AND STIMULATED RAMAN GAIN COEFFICIENT
4.6 SPONTANEOUS ANTI-STOKES RAMAN SCATTERING
4.7 RAMAN AMPLIFICATION IN PLANAR SILICON WAVEGUIDES
4.8 RAMAN EMISSION IN OPTICAL FIBERS
4.9 SUMMARY
CH-5 RAMAN AMPLIFICATION IN NANOWIRE ACTIVE SILICON WAVEGUIDES
5.1 ACTIVE SILICON RIB WAVEGUIDE STRUCTURES AND COUPLING METHOD
5.2 MEASUREMENTS OF THE TOTAL COUPLING LOSSES AND PROPAGATION LOSS
MEASUREMENTS OF THE NONLINEAR PROPAGATION LOSSES AND REDUCTION BY
.5.3 APPLYING VOLTAGE
: ^ THE CALCULATION OF THE EFFECTIVE AREA OF THE SILICON WAVEGUIDES
STIMULATED RAMAN GAIN COEFFICIENT CALCULATED FROM RAMAN SCATTERING
EFFICIENCY
THE MEASUREMENT OF THE ON-OFF RAMAN GAIN IN RIB NANOWIRE SILICON
5.6
WAVEGUIDES
;5.7 RAMAN NET GAIN IN NANOWIRE RIB SILICON WAVEGUIDES
5.8 SUMMARY
CH-6 CONCLUSIONS AND FUTURE WORK
REFERENCES
PUBLICATIONS
CONFERENCE CONTRIBUTIONS
A CKNOWLEDGMENTS
95
104
108
113
115
121
126
129
130
137
142
145
148
157
164
180
181
185
203
205
209
II
|
any_adam_object | 1 |
author | Mahdi, Shaimaa |
author_GND | (DE-588)1041845340 |
author_facet | Mahdi, Shaimaa |
author_role | aut |
author_sort | Mahdi, Shaimaa |
author_variant | s m sm |
building | Verbundindex |
bvnumber | BV041272147 |
classification_rvk | VG 9307 |
ctrlnum | (OCoLC)915034074 (DE-599)DNB1038803810 |
dewey-full | 537.6226 |
dewey-hundreds | 500 - Natural sciences and mathematics |
dewey-ones | 537 - Electricity and electronics |
dewey-raw | 537.6226 |
dewey-search | 537.6226 |
dewey-sort | 3537.6226 |
dewey-tens | 530 - Physics |
discipline | Chemie / Pharmazie Physik |
format | Thesis Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01927nam a2200505 c 4500</leader><controlfield tag="001">BV041272147</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20131125 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">130916s2013 gw ad|| m||| 00||| eng d</controlfield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">13,N36</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">1038803810</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783863873516</subfield><subfield code="9">978-3-86387-351-6</subfield></datafield><datafield tag="024" ind1="3" ind2=" "><subfield code="a">9783863873516</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">Best.-Nr.: 863873516</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)915034074</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DNB1038803810</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">XA-DE-BE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-83</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">537.6226</subfield><subfield code="2">22/ger</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">VG 9307</subfield><subfield code="0">(DE-625)147238:260</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">530</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Mahdi, Shaimaa</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)1041845340</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Raman effect in silicon-on-insulator nanowire waveguides</subfield><subfield code="c">Shaimaa Mahdi</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin</subfield><subfield code="b">Mensch-und-Buch-Verl.</subfield><subfield code="c">2013</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">II, 210 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Physics</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="a">Zugl.: Berlin, Techn. Univ., Diss., 2013</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Stimulierter Raman-Effekt</subfield><subfield code="0">(DE-588)4299534-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">SOI-Technik</subfield><subfield code="0">(DE-588)4128029-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Nanodraht</subfield><subfield code="0">(DE-588)4707308-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Lichtwellenleiter</subfield><subfield code="0">(DE-588)4267405-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Lichtwellenleiter</subfield><subfield code="0">(DE-588)4267405-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Nanodraht</subfield><subfield code="0">(DE-588)4707308-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">SOI-Technik</subfield><subfield code="0">(DE-588)4128029-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Stimulierter Raman-Effekt</subfield><subfield code="0">(DE-588)4299534-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=026245739&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-026245739</subfield></datafield></record></collection> |
genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
genre_facet | Hochschulschrift |
id | DE-604.BV041272147 |
illustrated | Illustrated |
indexdate | 2024-07-10T00:43:42Z |
institution | BVB |
isbn | 9783863873516 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-026245739 |
oclc_num | 915034074 |
open_access_boolean | |
owner | DE-83 |
owner_facet | DE-83 |
physical | II, 210 S. Ill., graph. Darst. |
publishDate | 2013 |
publishDateSearch | 2013 |
publishDateSort | 2013 |
publisher | Mensch-und-Buch-Verl. |
record_format | marc |
series2 | Physics |
spelling | Mahdi, Shaimaa Verfasser (DE-588)1041845340 aut Raman effect in silicon-on-insulator nanowire waveguides Shaimaa Mahdi Berlin Mensch-und-Buch-Verl. 2013 II, 210 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Physics Zugl.: Berlin, Techn. Univ., Diss., 2013 Stimulierter Raman-Effekt (DE-588)4299534-6 gnd rswk-swf SOI-Technik (DE-588)4128029-5 gnd rswk-swf Nanodraht (DE-588)4707308-1 gnd rswk-swf Lichtwellenleiter (DE-588)4267405-0 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Lichtwellenleiter (DE-588)4267405-0 s Nanodraht (DE-588)4707308-1 s SOI-Technik (DE-588)4128029-5 s Stimulierter Raman-Effekt (DE-588)4299534-6 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=026245739&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
spellingShingle | Mahdi, Shaimaa Raman effect in silicon-on-insulator nanowire waveguides Stimulierter Raman-Effekt (DE-588)4299534-6 gnd SOI-Technik (DE-588)4128029-5 gnd Nanodraht (DE-588)4707308-1 gnd Lichtwellenleiter (DE-588)4267405-0 gnd |
subject_GND | (DE-588)4299534-6 (DE-588)4128029-5 (DE-588)4707308-1 (DE-588)4267405-0 (DE-588)4113937-9 |
title | Raman effect in silicon-on-insulator nanowire waveguides |
title_auth | Raman effect in silicon-on-insulator nanowire waveguides |
title_exact_search | Raman effect in silicon-on-insulator nanowire waveguides |
title_full | Raman effect in silicon-on-insulator nanowire waveguides Shaimaa Mahdi |
title_fullStr | Raman effect in silicon-on-insulator nanowire waveguides Shaimaa Mahdi |
title_full_unstemmed | Raman effect in silicon-on-insulator nanowire waveguides Shaimaa Mahdi |
title_short | Raman effect in silicon-on-insulator nanowire waveguides |
title_sort | raman effect in silicon on insulator nanowire waveguides |
topic | Stimulierter Raman-Effekt (DE-588)4299534-6 gnd SOI-Technik (DE-588)4128029-5 gnd Nanodraht (DE-588)4707308-1 gnd Lichtwellenleiter (DE-588)4267405-0 gnd |
topic_facet | Stimulierter Raman-Effekt SOI-Technik Nanodraht Lichtwellenleiter Hochschulschrift |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=026245739&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
work_keys_str_mv | AT mahdishaimaa ramaneffectinsilicononinsulatornanowirewaveguides |