Novel oxide buff er approach for GaN integration on Si(111) platform through Sc2O3/Y2O3 bi-layer:
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
2012
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| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | 126 S. Ill., graph. Darst. |
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Datensatz im Suchindex
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| indexdate | 2024-07-10T00:36:46Z |
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| spelling | Tarnawska, Lidia Verfasser aut Novel oxide buff er approach for GaN integration on Si(111) platform through Sc2O3/Y2O3 bi-layer vorgelegt von Lidia Tarnawska 2012 126 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Cottbus, Techn. Univ., Diss., 2012 MOCVD-Verfahren (DE-588)4314628-4 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Lumineszenzdiode (DE-588)4125154-4 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Lumineszenzdiode (DE-588)4125154-4 s Galliumnitrid (DE-588)4375592-6 s MOCVD-Verfahren (DE-588)4314628-4 s DE-604 Erscheint auch als Online-Ausgabe urn:nbn:de:kobv:co1-opus-27904 http://opus.kobv.de/btu/volltexte/2013/2790/ kostenfrei Volltext |
| spellingShingle | Tarnawska, Lidia Novel oxide buff er approach for GaN integration on Si(111) platform through Sc2O3/Y2O3 bi-layer MOCVD-Verfahren (DE-588)4314628-4 gnd Galliumnitrid (DE-588)4375592-6 gnd Lumineszenzdiode (DE-588)4125154-4 gnd |
| subject_GND | (DE-588)4314628-4 (DE-588)4375592-6 (DE-588)4125154-4 (DE-588)4113937-9 |
| title | Novel oxide buff er approach for GaN integration on Si(111) platform through Sc2O3/Y2O3 bi-layer |
| title_auth | Novel oxide buff er approach for GaN integration on Si(111) platform through Sc2O3/Y2O3 bi-layer |
| title_exact_search | Novel oxide buff er approach for GaN integration on Si(111) platform through Sc2O3/Y2O3 bi-layer |
| title_full | Novel oxide buff er approach for GaN integration on Si(111) platform through Sc2O3/Y2O3 bi-layer vorgelegt von Lidia Tarnawska |
| title_fullStr | Novel oxide buff er approach for GaN integration on Si(111) platform through Sc2O3/Y2O3 bi-layer vorgelegt von Lidia Tarnawska |
| title_full_unstemmed | Novel oxide buff er approach for GaN integration on Si(111) platform through Sc2O3/Y2O3 bi-layer vorgelegt von Lidia Tarnawska |
| title_short | Novel oxide buff er approach for GaN integration on Si(111) platform through Sc2O3/Y2O3 bi-layer |
| title_sort | novel oxide buff er approach for gan integration on si 111 platform through sc2o3 y2o3 bi layer |
| topic | MOCVD-Verfahren (DE-588)4314628-4 gnd Galliumnitrid (DE-588)4375592-6 gnd Lumineszenzdiode (DE-588)4125154-4 gnd |
| topic_facet | MOCVD-Verfahren Galliumnitrid Lumineszenzdiode Hochschulschrift |
| url | http://opus.kobv.de/btu/volltexte/2013/2790/ |
| work_keys_str_mv | AT tarnawskalidia noveloxidebufferapproachforganintegrationonsi111platformthroughsc2o3y2o3bilayer |