Nitride semiconductor devices: fundamentals and applications
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Weinheim
Wiley-VCH
2013
|
| Schlagworte: | |
| Online-Zugang: | Inhaltstext Inhaltsverzeichnis |
| Beschreibung: | XIV, 460 S. Ill., graph. Darst. |
| ISBN: | 3527411011 9783527411016 9783527649006 |
Internformat
MARC
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| 100 | 1 | |a Morkoç, Hadis |d 1947- |e Verfasser |0 (DE-588)120855003 |4 aut | |
| 245 | 1 | 0 | |a Nitride semiconductor devices |b fundamentals and applications |c Hadis Morkoç |
| 264 | 1 | |a Weinheim |b Wiley-VCH |c 2013 | |
| 300 | |a XIV, 460 S. |b Ill., graph. Darst. | ||
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| 650 | 0 | 7 | |a Galliumnitrid |0 (DE-588)4375592-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Verbindungshalbleiter |0 (DE-588)4062623-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Nitride |0 (DE-588)4171929-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Wide-bandgap Halbleiter |0 (DE-588)4273153-7 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Nitride |0 (DE-588)4171929-3 |D s |
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Datensatz im Suchindex
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IMAGE 1
CONTENTS
PREFACE X I I I
1 GENERAL PROPERTIES O F NITRIDES 1
1.1 CRYSTAL STRUCTURE O F NITRIDES 1
1.2 GALLIUM NITRIDE 5
1.3 ALUMINUM NITRIDE 6
1.4 INDIUM NITRIDE 10
1.5 ALGAN ALLOY 13
1.6 INGAN ALLOY 14
1.7 ALINN ALLOY 14
1.8 INALGAN QUATERNARY ALLOY 15
1.9 ELECTRONIC BAND STRUCTURE AND POLARIZATION EFFECTS 1.9.1
INTRODUCTION 18
1.9.2 GENERAL STRAIN CONSIDERATIONS 2 2
1.9.3 K-P THEORY A N D THE QUASICUBIC MODEL 23
1.9.4 TEMPERATURE DEPENDENCE O F WURTZITE GAN BANDGAP 1.9.5 SPHALERITE
(ZINCBLENDE) GAN 26
1.9.6 ALN 2 8
1.9.6.1 WURTZITE ALN 2 8
1.9.6.2 ZINCBLENDE ALN 2 8
1.9.7 INN 29
1.10 POLARIZATION EFFECTS 31
1.10.1 PIEZOELECTRIC POLARIZATION 32 1.10.2 SPONTANEOUS POLARIZATION 3 5
1.10.3 NONLINEARITY O F POLARIZATION 3 5 1.10.3.1 NONLINEARITIES IN
PIEZOELECTRIC POLARIZATION 4 2 1.10.4 POLARIZATION I N HETEROSTRUCTURES
46 1.10.4.1 GA-POLARITY SINGLE ALGAN-GAN INTERFACE 51
1.10.4.2 POLARIZATION I N Q U A N T U M WELLS 56 1.11 NONPOLAR AND
SEMIPOLAR ORIENTATIONS 59
FURTHER READING 61
HTTP://D-NB.INFO/1027115896
IMAGE 2
VIII I CONTENTS
2 DOPING: DETERMINATION O F IMPURITY A N D CARRIER CONCENTRATIONS 63
2.1 INTRODUCTION 63
2.2 DOPING 63
2.3 FORMATION ENERGY O F DEFECTS 65
2.3.1 HYDROGEN A N D IMPURITY TRAPPING AT EXTENDED DEFECTS 6 7 2.4
DOPING CANDIDATES 69
2.5 FREE CARRIERS 70
2.6 BINDING ENERGY 7 0
2.7 CONDUCTIVITY TYPE: HOT PROBE AND HALL MEASUREMENTS 71 2.8
MEASUREMENT O F MOBILITY 71
2.9 SEMICONDUCTOR STATISTICS, DENSITY O F STATES, AND CARRIER
CONCENTRATION 74 2.10 CHARGE BALANCE EQUATION A N D CARRIER
CONCENTRATION 78 2.10.1 N-TYPE SEMICONDUCTOR 79 2.10.2 P-TYPE
SEMICONDUCTOR 8 4
2.11 CAPACITANCE-VOLTAGE MEASUREMENTS 8 7 APPENDIX 2.A. FERMI INTEGRAL
94 FURTHER READING 95
3 METAL CONTACTS 9 7
3.1 METAL-SEMICONDUCTOR BAND ALIGNMENT 97
3.2 CURRENT FLOW I N METAL-SEMICONDUCTOR JUNCTIONS 101 3.3 OHMIC CONTACT
RESISTANCE 107
3.3.1 SPECIFIC CONTACT RESISTIVITY 107
3.4 SEMICONDUCTOR RESISTANCE 108
3.4.1 DETERMINATION O F THE CONTACT RESISTIVITY 109 FURTHER READING 113
4 CARRIER TRANSPORT 115
4.1 INTRODUCTION 115
4.2 CARRIER SCATTERING 117
4.2.1 IMPURITY SCATTERING 118
4.2.2 ACOUSTIC PHONON SCATTERING 120
4.2.2.1 DEFORMATION POTENTIAL SCATTERING 121 4.2.2.2 PIEZOELECTRIC
SCATTERING 124 4.2.3 OPTICAL PHONON SCATTERING 126
4.2.3.1 NONPOLAR OPTICAL PHONON SCATTERING 126 4.2.3.2 POLAR OPTICAL
PHONON SCATTERING * 127 4.2.4 ALLOY SCATTERING A N D DISLOCATION
SCATTERING 134 4.3 CALCULATED MOBILITY O F GAN 143
4.4 SCATTERING AT HIGH FIELDS 147
4.4.1 TRANSPORT AT HIGH FIELDS: ENERGY AND MOMENTUM RELAXATION TIMES 152
4.4.2 ENERGY-DEPENDENT RELAXATION TIME A N D LARGE B 153 4.4.3 HALL
FACTOR 155
4.5 DELINEATION O F MULTIPLE CONDUCTION LAYER MOBILITIES 156
IMAGE 3
CONTENTS IIX
4.6 CARRIER TRANSPORT IN INN 158
4.7 CARRIER TRANSPORT I N ALN 159
4.8 CARRIER TRANSPORT I N ALLOYS 161
4.9 TWO-DIMENSIONAL TRANSPORT I N N-TYPE GAN 164 4.9.1 SCATTERING I N 2D
SYSTEMS 366
4.9.1.1 ELECTRON MOBILITY I N ALGAN/GAN 2D SYSTEM 168 4.9.1.2 NUMERICAL
TWO-DIMENSIONAL ELECTRON GAS MOBILITY CALCULATIONS 170 4.9.1.3
MAGNETOTRANSPORT AND MOBILITY SPECTRUM 173 FURTHER READING 174
5 T H E P - N JUNCTION 177
5.1 INTRODUCTION 177
5.2 BAND ALIGNMENT 177
5.3 ELECTROSTATIC CHARACTERISTICS O F P - N HETEROJUNCTIONS 179 5.4
CURRENT-VOLTAGE CHARACTERISTICS O F P - N JUNCTIONS 185 5.4.1 DIODE
CURRENT U N D E R REVERSE BIAS 186
5.4.1.1 POOLE-FRENKEL A N D SCHOTTKY EFFECTS 187
5.4.1.2 AVALANCHING 188
5.4.2 DIFFUSION CURRENT 189
5.4.2.1 DIFFUSION CURRENT U N D E R REVERSE BIAS 190 5.4.2.2 DIFFUSION
CURRENT U N D E R FORWARD BIAS 190 FURTHER READING 191
6 OPTICAL PROCESSES 293
6.1 INTRODUCTION 193
6.2 EINSTEIN'S A A N D B COEFFICIENTS 194
6.3 ABSORPTION A N D EMISSION 196
6.4 BAND-TO-BAND TRANSITIONS AND EFFICIENCY 198 6.5 OPTICAL TRANSITIONS
I N GAN 2 0 0
6.5.1 EXCITONIC TRANSITIONS I N GAN 2 0 0
6.5.1.1 STRAIN EFFECTS 203
6.5.1.2 BOUND EXCITONS 204
6.6 FREE-TO-BOUND TRANSITIONS 205
6.7 DONOR-ACCEPTOR TRANSITIONS 206
FURTHER READING 207
7 LIGHT-EMITTING DIODES A N D LIGHTING 209
7.1 INTRODUCTION 209
7.2 CURRENT CONDUCTION MECHANISM I N LED-LIKE STRUCTURES 211 7.3 OPTICAL
OUTPUT POWER A N D EFFICIENCY 2 1 4
7.3.1 EFFICIENCY AND OTHER LED RELEVANT TERMS 215 7.3.2 OPTICAL POWER
AND EXTERNAL EFFICIENCY 217 7.3.3 INTERNAL Q U A N T U M EFFICIENCY 218
7.3.3.1 AUGER RECOMBINATION 219 7.3.3.2 SRH RECOMBINATION 2 2 0
IMAGE 4
X CONTENTS
7.3.3.3 RADIATIVE RECOMBINATION 222
7.3.3.4 CONTINUITY OR RATE EQUATIONS AS PERTAINED TO EFFICIENCY 223
7.3.3.5 CARRIER OVERFLOW (SPILLOVER, FLYOVER, LEAKAGE) 231 7.4 EFFECT O
F SURFACE RECOMBINATION 2 4 4
7.5 EFFECT O F THREADING DISLOCATION O N LEDS 2 4 7
7.6 CURRENT CROWDING 2 4 7
7.7 PERCEPTION O F COLOR 2 5 0
7.8 CHROMATICITY COORDINATES AND COLOR TEMPERATURE 251 7.9 LED
DEGRADATION 253
7.10 PACKAGING 255
7.11 LUMINESCENCE CONVERSION A N D WHITE LIGHT GENERATION 2 5 7 7.11.1
COLOR-RENDERING INDEX 258
7.11.2 WHITE L I G H T FROM MULTICHIP LEDS 259 7.11.3 COMBINING LEDS AND
PHOSPHOR(S) 262 FURTHER READING 266
8 SEMICONDUCTOR LASERS: LIGHT AMPLIFICATION BY STIMULATED
EMISSION O F RADIATION 2 6 7 8.1 INTRODUCTION 267
8.2 A PRIMER TO THE PRINCIPLES O F LASERS 268
8.2.1 WAVEGUIDING 2 7 0
8.2.2 ANALYTICAL SOLUTION TO THE WAVEGUIDE PROBLEM 273 8.2.2.1 TE MODE
274
8.2.2.2 TM MODE 276
8.2.3 FAR-FIELD PATTERN 2 8 0
8.3 LOSS, THRESHOLD, AND CAVITY MODES 281
8.4 OPTICAL GAIN 283
8.5 A GLOSSARY FOR SEMICONDUCTOR LASERS 286
8.5.1 OPTICAL GAIN I N BULK LAYERS: A SEMICONDUCTOR APPROACH 289 8.5.1.1
RELATING ABSORPTION RATE TO ABSORPTION COEFFICIENT 2 9 0 8.5.1.2
RELATING STIMULATED EMISSION RATE TO ABSORPTION COEFFICIENT 290
8.5.1.3 RELATING SPONTANEOUS EMISSION RATE TO ABSORPTION COEFFICIENT 2 9
0 8.5.2 SEMICONDUCTOR REALM 291
8.5.3 GAIN I N Q U A N T U M WELLS 299
8.5.3.1 OPTICAL GAIN 3 0 2
8.5.3.2 MEASUREMENT O F GAIN I N NITRIDE LASERS 3 0 4 8.5.4 GAIN
MEASUREMENT VIA OPTICAL PUMPING 3 0 4 8.6 THRESHOLD CURRENT 306
8.7 ANALYSIS O F INJECTION LASERS WITH SIMPLIFYING ASSUMPTIONS 3 0 7
8.7.1 RECOMBINATION LIFETIME 3 0 9
8.7.2 Q U A N T U M EFFICIENCY 311
8.8 GAN-BASED LD DESIGN AND PERFORMANCE 3 1 2
8.8.1 GAIN SPECTRA O F INGAN INJECTION LASERS 3 1 7
8.8.2 MODE HOPPING 321
8.9 THERMAL RESISTANCE 3 2 2
IMAGE 5
CONTENTS X I
8.10 NONPOLAR AND SEMIPOLAR ORIENTATIONS 323
8.11 VERTICAL CAVITY SURFACE-EMITTING LASERS (VCSELS) 325 8.11.1
MICROCAVITY FUNDAMENTALS 3 2 8 8.11.2 POLARITON LASERS 333
8.12 DEGRADATION 3 3 7
APPENDIX 8. A: DETERMINATION O F THE PHOTON DENSITY AND PHOTON
ENERGY DENSITY I N A CAVITY 343 FURTHER READING 3 4 8
9 FIELD EFFECT TRANSISTORS 3 4 9
9.1 INTRODUCTION 3 4 9
9.2 OPERATION PRINCIPLES O F HETEROJUNCTION FIELD EFFECT TRANSISTORS 350
9.2.1 HETEROINTERFACE CHARGE 3 5 0
9.2.2 ANALYTICAL DESCRIPTION O F HFETS 358 9.3 GAN AND INGAN CHANNEL
HFETS 3 6 4
9.4 EQUIVALENT CIRCUIT MODELS: DE-EMBEDDING AND CUTOFF FREQUENCY 366
9.4.1 SMALL-SIGNAL EQUIVALENT CIRCUIT MODELING 367 9.4.2 CUTOFF
FREQUENCY 3 7 0
9.5 HFET AMPLIFIER CLASSIFICATION AND EFFICIENCY 373 9.6 DRAIN VOLTAGE
AND DRAIN BREAKDOWN MECHANISMS 3 7 8 9.7 FIELD PLATE FOR SPREADING
ELECTRIC FIELD FOR INCREASING BREAKDOWN
VOLTAGE 383
9.8 ANOMALIES I N GAN MESFETS A N D ALGAN/GAN HFETS 3 8 4 9.8.1 EFFECT O
F THE TRAPS I N THE BUFFER LAYER 386
9.8.2 EFFECT O F BARRIER STATES 392
9.8.3 CORRELATION BETWEEN CURRENT COLLAPSE AND SURFACE CHARGING 393 9.9
ELECTRONIC NOISE 396
9.9.1 FET EQUIVALENT CIRCUIT WITH NOISE 398 9.9.2 HIGH-FREQUENCY NOISE I
N CONJUNCTION WITH GAN FETS 4 0 2 9.10 SELF-HEATING AND PHONON EFFECTS 4
0 5
9.10.1 HEAT DISSIPATION A N D JUNCTION TEMPERATURE 406 9.10.2 HOT PHONON
EFFECTS 4 0 9
9.10.2.1 PHONON DECAY CHANNELS AND DECAY TIME 411 9.10.2.2 IMPLICATIONS
FOR FETS 416 9.10.2.3 HEAT REMOVAL I N VIEW O F HOT PHONONS 4 1 8
9.10.2.4 TUNING O F THE H O T PHONON LIFETIME 421
9.11 HFET DEGRADATION 4 2 7
9.11.1 GATED STRUCTURES: RELIABILITY 4 3 4 9.11.2 RELIABILITY TESTS 4 3
8
9.12 HFETS FOR HIGH-POWER SWITCHING 4 4 0
APPENDIX 9.A. SHEET CHARGE CALCULATION I N ALGAN/GAN STRUCTURES WITH ALN
INTERFACE LAYER (ALGAN/ALN/GAN) 4 4 4 FURTHER READING 446
INDEX 4 4 9 |
| any_adam_object | 1 |
| author | Morkoç, Hadis 1947- |
| author_GND | (DE-588)120855003 |
| author_facet | Morkoç, Hadis 1947- |
| author_role | aut |
| author_sort | Morkoç, Hadis 1947- |
| author_variant | h m hm |
| building | Verbundindex |
| bvnumber | BV040977993 |
| classification_rvk | UP 3100 ZN 3460 |
| ctrlnum | (OCoLC)843494584 (DE-599)DNB1027115896 |
| dewey-full | 621.38152 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.38152 |
| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV040977993 |
| illustrated | Illustrated |
| indexdate | 2024-08-03T00:37:45Z |
| institution | BVB |
| isbn | 3527411011 9783527411016 9783527649006 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-025956052 |
| oclc_num | 843494584 |
| open_access_boolean | |
| owner | DE-11 DE-83 DE-634 DE-19 DE-BY-UBM DE-20 DE-898 DE-BY-UBR |
| owner_facet | DE-11 DE-83 DE-634 DE-19 DE-BY-UBM DE-20 DE-898 DE-BY-UBR |
| physical | XIV, 460 S. Ill., graph. Darst. |
| publishDate | 2013 |
| publishDateSearch | 2013 |
| publishDateSort | 2013 |
| publisher | Wiley-VCH |
| record_format | marc |
| spelling | Morkoç, Hadis 1947- Verfasser (DE-588)120855003 aut Nitride semiconductor devices fundamentals and applications Hadis Morkoç Weinheim Wiley-VCH 2013 XIV, 460 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Verbindungshalbleiter (DE-588)4062623-4 gnd rswk-swf Nitride (DE-588)4171929-3 gnd rswk-swf Wide-bandgap Halbleiter (DE-588)4273153-7 gnd rswk-swf Nitride (DE-588)4171929-3 s Verbindungshalbleiter (DE-588)4062623-4 s Wide-bandgap Halbleiter (DE-588)4273153-7 s Halbleiterbauelement (DE-588)4113826-0 s DE-604 Galliumnitrid (DE-588)4375592-6 s Halbleitertechnologie (DE-588)4158814-9 s Erscheint auch als Online-Ausgabe, EPUB 978-3-527-64902-0 Erscheint auch als Online-Ausgabe, MOBI 978-3-527-64901-3 Erscheint auch als Online-Ausgabe, PDF 978-3-527-64903-7 X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=4166019&prov=M&dok_var=1&dok_ext=htm Inhaltstext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025956052&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Morkoç, Hadis 1947- Nitride semiconductor devices fundamentals and applications Halbleitertechnologie (DE-588)4158814-9 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Galliumnitrid (DE-588)4375592-6 gnd Verbindungshalbleiter (DE-588)4062623-4 gnd Nitride (DE-588)4171929-3 gnd Wide-bandgap Halbleiter (DE-588)4273153-7 gnd |
| subject_GND | (DE-588)4158814-9 (DE-588)4113826-0 (DE-588)4375592-6 (DE-588)4062623-4 (DE-588)4171929-3 (DE-588)4273153-7 |
| title | Nitride semiconductor devices fundamentals and applications |
| title_auth | Nitride semiconductor devices fundamentals and applications |
| title_exact_search | Nitride semiconductor devices fundamentals and applications |
| title_full | Nitride semiconductor devices fundamentals and applications Hadis Morkoç |
| title_fullStr | Nitride semiconductor devices fundamentals and applications Hadis Morkoç |
| title_full_unstemmed | Nitride semiconductor devices fundamentals and applications Hadis Morkoç |
| title_short | Nitride semiconductor devices |
| title_sort | nitride semiconductor devices fundamentals and applications |
| title_sub | fundamentals and applications |
| topic | Halbleitertechnologie (DE-588)4158814-9 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Galliumnitrid (DE-588)4375592-6 gnd Verbindungshalbleiter (DE-588)4062623-4 gnd Nitride (DE-588)4171929-3 gnd Wide-bandgap Halbleiter (DE-588)4273153-7 gnd |
| topic_facet | Halbleitertechnologie Halbleiterbauelement Galliumnitrid Verbindungshalbleiter Nitride Wide-bandgap Halbleiter |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=4166019&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025956052&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT morkochadis nitridesemiconductordevicesfundamentalsandapplications |