Strain engineered MOSFETs:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Boca Raton, Fla. [u.a.]
CRC Press
2013
|
| Schlagworte: | |
| Beschreibung: | XIX, 300 S. Ill., graph. Darst |
| ISBN: | 9781466500556 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV040790380 | ||
| 003 | DE-604 | ||
| 005 | 20180730 | ||
| 007 | t | ||
| 008 | 130228s2013 ad|| |||| 00||| eng d | ||
| 010 | |a 2012031209 | ||
| 020 | |a 9781466500556 |9 978-1-466-50055-6 | ||
| 035 | |a (OCoLC)827774375 | ||
| 035 | |a (DE-599)GBV726402397 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-634 |a DE-83 | ||
| 082 | 0 | |a 621.3815284 | |
| 084 | |a ZN 4040 |0 (DE-625)157343: |2 rvk | ||
| 084 | |a ZN 4870 |0 (DE-625)157415: |2 rvk | ||
| 084 | |a ZN 4960 |0 (DE-625)157426: |2 rvk | ||
| 100 | 1 | |a Maiti, C. K. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Strain engineered MOSFETs |c C. K. Maiti ; T. K. Maiti |
| 246 | 1 | 3 | |a Strain-engineered MOSFETs |
| 264 | 1 | |a Boca Raton, Fla. [u.a.] |b CRC Press |c 2013 | |
| 300 | |a XIX, 300 S. |b Ill., graph. Darst | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 4 | |a aMetal oxide semiconductor field-effect transistorsxReliability | |
| 650 | 4 | |a aIntegrated circuitsxFault tolerance | |
| 650 | 4 | |a aStrains and stresses | |
| 650 | 0 | 7 | |a Fehleranalyse |0 (DE-588)4016608-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Zuverlässigkeit |0 (DE-588)4059245-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
| 689 | 0 | 1 | |a Zuverlässigkeit |0 (DE-588)4059245-5 |D s |
| 689 | 0 | 2 | |a Fehleranalyse |0 (DE-588)4016608-9 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Maiti, T. K. |e Sonstige |4 oth | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-025768525 | ||
Datensatz im Suchindex
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|---|---|
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| author | Maiti, C. K. |
| author_facet | Maiti, C. K. |
| author_role | aut |
| author_sort | Maiti, C. K. |
| author_variant | c k m ck ckm |
| building | Verbundindex |
| bvnumber | BV040790380 |
| classification_rvk | ZN 4040 ZN 4870 ZN 4960 |
| ctrlnum | (OCoLC)827774375 (DE-599)GBV726402397 |
| dewey-full | 621.3815284 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815284 |
| dewey-search | 621.3815284 |
| dewey-sort | 3621.3815284 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV040790380 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T00:33:54Z |
| institution | BVB |
| isbn | 9781466500556 |
| language | English |
| lccn | 2012031209 |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-025768525 |
| oclc_num | 827774375 |
| open_access_boolean | |
| owner | DE-634 DE-83 |
| owner_facet | DE-634 DE-83 |
| physical | XIX, 300 S. Ill., graph. Darst |
| publishDate | 2013 |
| publishDateSearch | 2013 |
| publishDateSort | 2013 |
| publisher | CRC Press |
| record_format | marc |
| spelling | Maiti, C. K. Verfasser aut Strain engineered MOSFETs C. K. Maiti ; T. K. Maiti Strain-engineered MOSFETs Boca Raton, Fla. [u.a.] CRC Press 2013 XIX, 300 S. Ill., graph. Darst txt rdacontent n rdamedia nc rdacarrier aMetal oxide semiconductor field-effect transistorsxReliability aIntegrated circuitsxFault tolerance aStrains and stresses Fehleranalyse (DE-588)4016608-9 gnd rswk-swf Zuverlässigkeit (DE-588)4059245-5 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf MOS-FET (DE-588)4207266-9 s Zuverlässigkeit (DE-588)4059245-5 s Fehleranalyse (DE-588)4016608-9 s DE-604 Maiti, T. K. Sonstige oth |
| spellingShingle | Maiti, C. K. Strain engineered MOSFETs aMetal oxide semiconductor field-effect transistorsxReliability aIntegrated circuitsxFault tolerance aStrains and stresses Fehleranalyse (DE-588)4016608-9 gnd Zuverlässigkeit (DE-588)4059245-5 gnd MOS-FET (DE-588)4207266-9 gnd |
| subject_GND | (DE-588)4016608-9 (DE-588)4059245-5 (DE-588)4207266-9 |
| title | Strain engineered MOSFETs |
| title_alt | Strain-engineered MOSFETs |
| title_auth | Strain engineered MOSFETs |
| title_exact_search | Strain engineered MOSFETs |
| title_full | Strain engineered MOSFETs C. K. Maiti ; T. K. Maiti |
| title_fullStr | Strain engineered MOSFETs C. K. Maiti ; T. K. Maiti |
| title_full_unstemmed | Strain engineered MOSFETs C. K. Maiti ; T. K. Maiti |
| title_short | Strain engineered MOSFETs |
| title_sort | strain engineered mosfets |
| topic | aMetal oxide semiconductor field-effect transistorsxReliability aIntegrated circuitsxFault tolerance aStrains and stresses Fehleranalyse (DE-588)4016608-9 gnd Zuverlässigkeit (DE-588)4059245-5 gnd MOS-FET (DE-588)4207266-9 gnd |
| topic_facet | aMetal oxide semiconductor field-effect transistorsxReliability aIntegrated circuitsxFault tolerance aStrains and stresses Fehleranalyse Zuverlässigkeit MOS-FET |
| work_keys_str_mv | AT maitick strainengineeredmosfets AT maititk strainengineeredmosfets |