Interfaces in nitride devices:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Garching b. München
Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München
2013
|
| Ausgabe: | 1. Aufl. |
| Schriftenreihe: | Selected Topics of Semiconductor Physics and Technology
Vol. 158 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | 208 S. Ill., graph. Darst. |
| ISBN: | 9783941650589 |
Internformat
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Datensatz im Suchindex
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| adam_text | IMAGE 1
CONTENTS
ZUSAMMENFASSUNG 5
1 INTRODUCTION 11
2 T H E A L G A N MATERIAL S Y S T E M 15
2.1 INTRODUCTION 16
2.2 CRYSTAL STRUCTURE 16
2.3 ELECTRONIC PROPERTIES 19
3 EXPERIMENTAL M E T H O D S 2 1
3.1 MOLECULAR BEAM EPITAXY OF ALGAN 22
3.2 X-RAY DIFFRACTION 24
3.3 X-RAY PHOTOELECTRON SPECTROSCOPY 28
3.4 PHOTOLUMINESCENCE 30
4 A1N G R O W T H O N D I A M O N D 3 3
4.1 INTRODUCTION 34
4.2 DIAMOND PROPERTIES 34
4.2.1 CRYSTAL STRUCTURE 35
4.2.2 SURFACE TERMINATION 36
4.2.2.1 SURFACE RECONSTRUCTION AND TERMINATION 36 4.2.2.2 ELECTRON
AFFINITY 38
4.2.3 ELECTRONIC PROPERTIES 40
4.3 A1N ON DIAMOND 42
4.3.1 BENEFITS 42
4.3.2 GROWTH ISSUES 43
4.3.2.1 THERMAL EXPANSION COEFFICIENT 43
4.3.2.2 LATTICE MISMATCH 44
4.3.2.3 CRYSTALLOGRAPHIC ORIENTATION 45
4.3.2.4 BAND ALIGNMENT AND BENDING 46
4.3.3 SAMPLE PREPARATION 48
1
HTTP://D-NB.INFO/1030556377
IMAGE 2
4.3.3.1 SURFACE MORPHOLOGY 48
4.3.3.2 NCD PREPARATION 49
4.3.3.3 SCD PREPARATION 49
4.3.3.4 GROWTH SETUP 50
4.4 RESULTS AND DISCUSSION 52
4.4.1 SURFACE TERMINATION 52
4.4.1.1 NANO CRYSTALLINE DIAMOND 52
4.4.1.2 SINGLE CRYSTALLINE DIAMOND 59
4.4.1.3 CONCLUSIONS 64
4.4.2 MBE GROWTH ON (100) AND (111) SCD 65
4.4.2.1 NUCLEATION AND PRETREATMENT 65
4.4.2.2 SURFACE MORPHOLOGY 67
4.4.2.3 TRANSMISSION ELECTRON MICROSCOPY ANALYSIS . . . 69
4.4.3 CRYSTALLOGRAPHIC ORIENTATION AND STRAIN 72
4.4.3.1 IN-PLANE EPITAXIAL RELATIONSHIP 72
4.4.3.2 ORIENTATION OF THE C-AXIS 73
4.4.3.3 STRAIN 75
4.4.3.4 GROWTH ON MISCUT (100) DIAMOND 77
4.4.4 BAND ALIGNMENT 81
4.4.4.1 OUTLINE OF MEASUREMENT METHOD 82
4.4.4.2 DETERMINATION OF A (E QL - EV) 83
4.4.4.3 SPECTROMETER RESPONSE FUNCTION 83
4.4.4.4 A (E CL - E V ) OF DIAMOND 84
4.4.4.5 A ( E C L - E V ) OF A1N 85
4.4.4.6 FORMATION OF THE DIAMOND/AIN HETEROJUNCTION . 86
4.4.4.7 A1N BAND BENDING 87
4.4.4.8 BAND OFFSETS 89
4.4.4.9 CONSEQUENCES 90
4.4.5 AIN/DIAMOND P-N HETEROJUNCTION 91
4.4.5.1 SAMPLE PREPARATION 91
4.4.5.2 ELECTRICAL PROPERTIES 91
4.4.5.3 OPTOELECTRONIC PROPERTIES 94
4.5 SUMMARY AND OUTLOOK 96
5 G A N / A I N Q U A N T U M D O T S 101
5.1 INTRODUCTION 102
5.2 BASIC FUNDAMENTALS OF QUANTUM DOTS 103
5.2.1 CONFINEMENT 103
2
IMAGE 3
5.2.2 SELF ASSEMBLED GROWTH OF QD SUPER LATTICES 105
5.2.2.1 PHYSICAL PRINCIPLES 106
5.2.3 QUANTUM CONFINED STARK EFFECT 108
5.2.4 ELECTROSTATIC POTENTIAL IN GAN/AIN QDS 109
5.2.4.1 INFLUENCE OF POLARIZATION FIELDS 110
5.2.4.2 STRAIN COMPONENTS I L L
5.2.4.3 WAVE FUNCTION OF ELECTRON AND HOLE 113
5.2.5 SEMICONDUCTOR GAS DETECTION 114
5.2.5.1 DETECTION MECHANISM 115
5.2.5.2 CHEMICAL REACTIONS 116
5.2.5.3 TRANSIENT RESPONSE 117
5.3 SAMPLE PREPARATION AND MEASUREMENT SETUP 118
5.3.1 QD SAMPLE GROWTH 118
5.3.2 STRUCTURE AND CONTACTS 119
5.3.3 PHOTOLUMINESCENCE SETUP FOR QD MEASUREMENTS 120 5.4 RESULTS AND
DISCUSSION 122
5.4.1 ENSEMBLE LUMINESCENCE 122
5.4.1.1 HOMOGENEOUS BROADENING 122
5.4.1.2 INFLUENCE OF HIGHER EXCITONIC STATES 123
5.4.1.3 QD SIZE FLUCTUATIONS 125
5.4.1.4 INFLUENCE OF LAYER NUMBER 125
5.4.1.5 SCHOTTKY BARRIER TOP CONTACT 126
5.4.1.6 DATA ANALYSIS 126
5.4.2 TEMPERATURE DEPENDENCE OF PHOTO LUMINESCENCE 128 5.4.2.1 ENERGY
SHIFT 130
5.4.2.2 INTENSITY QUENCH 134
5.4.3 FIELD DEPENDENCE OF PL 137
5.4.3.1 APPLYING AN ELECTRIC FIELD TO THE DOT 137
5.4.3.2 FIRST MEASUREMENTS 139
5.4.3.3 INFLUENCE OF SPACER THICKNESS 141
5.4.4 PHOTO CURRENT MODEL 145
5.4.4.1 TUNNELING THROUGH THE BARRIER 146
5.4.4.2 INFLUENCE OF SPACER THICKNESS 147
5.4.4.3 INFLUENCE OF DOT SIZE 148
5.4.4.4 INFLUENCE OF LAYER NUMBER 150
5.4.4.5 INFLUENCE OF ALGAN LAYER COMPOSITION 151
5.4.5 HYDROGEN SENSING 153
5.4.5.1 PRINCIPLE OF SENSING 154
3
IMAGE 4
5.4.5.2 TRANSIENT RESPONSE 156
5.4.5.3 HYDROGEN CONCENTRATION 157
5.4.5.4 TEMPERATURE DEPENDENCE 159
5.4.5.5 INFLUENCE OF LAYER NUMBER 160
5.4.5.6 INFLUENCE OF SPACER THICKNESS 161
5.5 SUMMARY AND OUTLOOK 163
A P P E N D I X 1 6 6
A LIST O F D I A M O N D S A M P L E S 1 6 7
B LIST O F G A N / A1N Q D SAMPLES 1 6 9
C C O M P L E T E D A T A S E T O F Q D P L M E A S U R E M E N T S 171
BIBLIOGRAPHY 1 7 7
DANKSAGUNG 2 0 7
4
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| discipline | Physik Elektrotechnik |
| edition | 1. Aufl. |
| format | Thesis Book |
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| indexdate | 2024-07-10T00:33:11Z |
| institution | BVB |
| isbn | 9783941650589 |
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| series2 | Selected Topics of Semiconductor Physics and Technology |
| spelling | Weidemann, Olaf Ulrich Wilhelm Verfasser aut Interfaces in nitride devices Olaf Ulrich Wilhelm Weidemann 1. Aufl. Garching b. München Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München 2013 208 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Selected Topics of Semiconductor Physics and Technology Vol. 158 Zugl.: München, Techn. Univ., Diss., 2012 Aluminiumnitrid (DE-588)4226770-5 gnd rswk-swf Wachstum (DE-588)4064115-6 gnd rswk-swf Diamant (DE-588)4012069-7 gnd rswk-swf Sensor (DE-588)4038824-4 gnd rswk-swf Mischkristall (DE-588)4170112-4 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Quantenpunkt (DE-588)4263396-5 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Galliumnitrid (DE-588)4375592-6 s Aluminiumnitrid (DE-588)4226770-5 s Mischkristall (DE-588)4170112-4 s Quantenpunkt (DE-588)4263396-5 s Sensor (DE-588)4038824-4 s DE-604 Dünne Schicht (DE-588)4136925-7 s Wachstum (DE-588)4064115-6 s Diamant (DE-588)4012069-7 s Selected Topics of Semiconductor Physics and Technology Vol. 158 (DE-604)BV011499438 158 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025732546&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Weidemann, Olaf Ulrich Wilhelm Interfaces in nitride devices Selected Topics of Semiconductor Physics and Technology Aluminiumnitrid (DE-588)4226770-5 gnd Wachstum (DE-588)4064115-6 gnd Diamant (DE-588)4012069-7 gnd Sensor (DE-588)4038824-4 gnd Mischkristall (DE-588)4170112-4 gnd Galliumnitrid (DE-588)4375592-6 gnd Quantenpunkt (DE-588)4263396-5 gnd Dünne Schicht (DE-588)4136925-7 gnd |
| subject_GND | (DE-588)4226770-5 (DE-588)4064115-6 (DE-588)4012069-7 (DE-588)4038824-4 (DE-588)4170112-4 (DE-588)4375592-6 (DE-588)4263396-5 (DE-588)4136925-7 (DE-588)4113937-9 |
| title | Interfaces in nitride devices |
| title_auth | Interfaces in nitride devices |
| title_exact_search | Interfaces in nitride devices |
| title_full | Interfaces in nitride devices Olaf Ulrich Wilhelm Weidemann |
| title_fullStr | Interfaces in nitride devices Olaf Ulrich Wilhelm Weidemann |
| title_full_unstemmed | Interfaces in nitride devices Olaf Ulrich Wilhelm Weidemann |
| title_short | Interfaces in nitride devices |
| title_sort | interfaces in nitride devices |
| topic | Aluminiumnitrid (DE-588)4226770-5 gnd Wachstum (DE-588)4064115-6 gnd Diamant (DE-588)4012069-7 gnd Sensor (DE-588)4038824-4 gnd Mischkristall (DE-588)4170112-4 gnd Galliumnitrid (DE-588)4375592-6 gnd Quantenpunkt (DE-588)4263396-5 gnd Dünne Schicht (DE-588)4136925-7 gnd |
| topic_facet | Aluminiumnitrid Wachstum Diamant Sensor Mischkristall Galliumnitrid Quantenpunkt Dünne Schicht Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025732546&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV011499438 |
| work_keys_str_mv | AT weidemannolafulrichwilhelm interfacesinnitridedevices |