Novel thin film concepts for photovoltaic applications:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Garching b. München
Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München
2013
|
| Ausgabe: | 1. Aufl. |
| Schriftenreihe: | Selected Topics of Semiconductor Physics and Technology
Vol. 156 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | IV, 287 S. Ill., graph. Darst. |
| ISBN: | 9783941650565 |
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| 245 | 1 | 0 | |a Novel thin film concepts for photovoltaic applications |c Tobias Walter Antesberger |
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| 264 | 1 | |a Garching b. München |b Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München |c 2013 | |
| 300 | |a IV, 287 S. |b Ill., graph. Darst. | ||
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Datensatz im Suchindex
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| adam_text | IMAGE 1
CONTENTS
ZUSAMMENFASSUNG 1
1. INTRODUCTION 5
2. METAL-INDUCED LAYER EXCHANGE (MILE) 9
2.1. INTRODUCTION TO MILE 9
2.1.1. MILE IN COMPARISON WITH OTHER CRYSTALLIZATION METHODS 9
2.1.2. INTRODUCTION O F A TI-INTERFACIAL LAYER TO MILE 14
2.2. THEORETICAL CONSIDERATIONS ON THE MILE PROCESSES 15
2.2.1. HISTORICAL BACKGROUND AND DEVELOPMENT 15
2.2.2. PHENOMENOLOGICAL DESCRIPTION O F THE PROCESS 16
2.2.3. THEORETICAL MODEL O F THE MICROSCOPIC PROCESS 17
2.2.4. EXPERIMENTAL PARAMETERS O F THE PROCESS 33
2.3. THERMODYNAMIC PROPERTIES O F INVOLVED SYSTEMS 35
2.3.1. THE ALUMINUM-SILICON SYSTEM 36
2.3.2. THE SILVER-SILICON SYSTEM 37
2.3.3. THE SILICON-TITANIUM SYSTEM 39
2.3.4. THE INTERACTION BETWEEN SILVER, ALUMINUM AND TITANIUM 42
2.3.5. FURTHER INTERESTING MATERIAL SYSTEMS DURING METAL-INDUCED LAYER
EXCHANGE 42
2.4. RESUME O F THE PROPERTIES O F THE ALUMINUM-INDUCED LAYER EXCHANGE
(ALILE)
AND SILVER-INDUCED LAYER EXCHANGE (AGLLE) 44
2.4.1. PROCESS DYNAMICS 44
2.4.2. STRUCTURAL PROPERTIES 46
2.4.3. ELECTRICAL PROPERTIES 46
2.4.4. INFLUENCE O F THE SUBSTRATE 47
3. MEASUREMENT AND CHARACTERIZATION TECHNIQUES 49
3.1. ATOMIC FORCE MICROSCOPY 49
3.2. FOCUSED ION BEAM ANALYSIS 49
3.3. HALL EFFECT MEASUREMENTS 49
3.4. OPTICAL MICROSCOPY 49
3.5. RAMAN SPECTROSCOPY 50
3.6. SECONDARY ION MASS SPECTROSCOPY (SIMS) 50
3.7. TEMPERATURE-DEPENDENT ELECTRICAL CONDUCTIVITY MEASUREMENTS 50
3.8. THERMOGRAPHY 51
3.9. TRANSMISSION ELECTRON MICROSCOPY 51
I
HTTP://D-NB.INFO/1030556326
IMAGE 2
3.10. UVWIS AND NIR SPECTROSCOPY 51
3.11. X-RAY-INDUCED PHOTOELECTRORI SPECTROSCOPY 52
3.12. X-RAY DIFFRACTION 53
4. SAMPLE PREPARATION AND CHARACTERIZATION OF THE INITIAL LAYERS 55
4.1. SAMPLE PREPARATION 55
4.1.1. ALUMINUM 55
4.1.2. SILVER 57
4.1.3. TITANIUM 58
4.1.4. OXIDATION 58
4.1.5. AMORPHOUS SILICON 58
4.1.6. PHOSPHORUS AND BORON DOPING 59
4.2. FUNDAMENTALS O F THE INITIAL LAYERS 59
4.2.1. SUBSTRATES 59
4.2.2. ALUMINUM 61
4.2.3. SILVER 61
4.2.4. DIFFUSION BARRIER 63
4.2.5. AMORPHOUS SILICON 79
4.2.6. PHOSPHORUS AND BORON DOPING O F THE A-SI 79
4.3. ANNEALING O F THE INITIAL LAYER STACK 80
4.4. METAL REMOVAL 81
5. PROCESS DYNAMICS AND GRAIN GROWTH OF THE TITANIUM-ASSISTED
METAL-INDUCED
LAYER EXCHANGE (TI.MILE) PROCESS 83
5.1. GENERAL ASPECTS O F THE PROCESS DYNAMICS 83
5.1.1. SILICON COVERAGE 85
5.1.2. INCUBATION PERIOD O F NUCLEATION AND GRAIN DENSITY 85
5.1.3. GRAIN GROWTH VELOCITY 85
5.1.4. ACTIVATION ENERGIES 85
5.1.5. OVERALL DIFFUSION COEFFICIENT 86
5.2. CONSIDERATIONS ON THE ACTIVATION ENERGIES O F THE TI.MILE PROCESS
87
5.3. PROCESS DYNAMICS O F TITANIUM-ASSISTED ALUMINUM-INDUCED LAYER
EXCHANGE
(TI.ALILE) 88
5.3.1. PROCESS REPRODUCIBILITY 90
5.3.2. INFLUENCE O F THE ANNEALING TEMPERATURE 91
5.3.3. INFLUENCE O F THE OXIDATION 96
5.3.4. INFLUENCE O F THE TITANIUM INTERFACIAL LAYER THICKNESS 99
IMAGE 3
5.3.5. INFLUENCE O F THE A1 LAYER THICKNESS 102
5.3.6. INFLUENCE O F THE SUBSTRATE 106
5.4. PROCESS DYNAMICS O F TITANIUM-ASSISTED SILVER-INDUCED LAYER
EXCHANGE (TI.AGLLE). 107
5.4.1. PROCESS REPRODUCIBILITY 110
5.4.2. INFLUENCE O F THE ANNEALING TEMPERATURE 110
5.4.3. INFLUENCE O F THE OXIDATION 113
5*4.4. INFLUENCE O F THE TITANIUM INTERFECIAL LAYER THICKNESS 116
5.4.5. INFLUENCE O F THE SILVER LAYER THICKNESS 121
5.4.6. INFLUENCE O F THE LAYER THICKNESS RATIO 124
5.4.7. INFLUENCE O F THE SUBSTRATE 127
5.5. REVERSE TITANIUM-ASSISTED METAL-INDUCED LAYER EXCHANGE 128
5.5.1. GENERAL ASPECTS 128
5.5.2. EXPERIMENTAL RESULTS 129
5.6. A WALK THROUGH THE PHASE DIAGRAM - INFLUENCE O F TEMPERATURE
PROFILES 132
5.6.1. TI.ALILE 136
5.6.2. TI.AGLLE 142
6. STRUCTURAL AND OPTICAL PROPERTIES OF TI.MILE LAYERS 149
6.1. STRUCTURAL PROPERTIES O F TI.ALILE LAYERS 149
6.2. STRUCTURAL PROPERTIES O F TI.AGLLE LAYERS 155
6.3. OPTICAL PROPERTIES O F TI.ALILE AND TI.AGLLE LAYERS 158
7. ELECTRONIC PROPERTIES OF AGILE AND TI.AGLLE LAYER 163
7.1. IMPURITIES AND DOPANTS DURING METAL-INDUCED LAYER EXCHANGE (MILE)
163
7.1.1. GENERAL PROPERTIES O F ALUMINUM IN SILICON 163
7.1.2. GENERAL PROPERTIES OF SILVER IN SILICON 165
7.1.3. GENERAL PROPERTIES O F TITANIUM IN SILICON 165
7.1.4. GENERAL PROPERTIES O F BORON AND PHOSPHORUS IN SILICON 166
7.2. ELECTRONIC TRANSPORT PROPERTIES O F POLYCRYSTALLINE SEMICONDUCTOR
THIN FILMS . . . 167
7.3. ELECTRONIC PROPERTIES O F TI.ALILE LAYERS 175
7.4. ELECTRONIC PROPERTIES O F NOMINALLY UNDOPED TI.AGLLE 179
7.5. ELECTRONIC PROPERTIES O F INTENTIONALLY DOPED AGILE AND TI.AGLLE
LAYERS . . . . 180
7.6. TEMPERATURE-DEPENDENT ELECTRICAL CONDUCTIVITY 195
7.6.1. GENERAL ASPECTS O F THE TEMPERATURE-DEPENDENT ELECTRICAL
CONDUCTIVITY . 195
7.6.2. TEMPERATURE-DEPENDENT CHARACTERIZATION O F TI.ALILE LAYERS 199
7.6.3. TEMPERATURE-DEPENDENT CONDUCTIVITY O F UNDOPED TI.AGLLE LAYERS .
. . 200
III
IMAGE 4
7.6.4. TEMPERATURE-DEPENDENT CHARACTERIZATION O F BORON- AND
PHOSPHORUS-DOPED
TI.AGLLE LAYERS 201
8. ELECTRONIC APPLICATIONS AND NOVEL CONCEPTS FOR PHOTOVOLTAIC 211
8.1. PN-JUNCTIONS 211
8.1.1. TI.ALILE 211
8.1.2. TI.AGLLE 213
8.2. SOLAR CELLS 214
8.3. THIN FILM TRANSISTORS 216
9. SUMMARY AND OUTLOOK 221
9.1. SUMMARY 221
9.2. OUTLOOK 223
9.2.1. THE LAYER EXCHANGE 223
9.2.2. STRUCTURAL PROPERTIES O F THE RESULTING POLY-SI 225
9.2.3. INTENTIONAL DOPING AND ELECTRONIC PROPERTIES 226
9.2.4. PHOTOVOLTAIC APPLICATIONS 226
9.2.5. SILICON-GERMANIUM ALLOYS 227
A. APPENDIX 229
A. 1. XPS PEAK FUNCTIONS 229
A.2. CALCULATION O F THE MEAN EFFECTIVE AREA A 231
A.3. NON-REFLECTING GLASS 233
LIST OF ABBREVIATIONS 237
PHYSICAL CONSTANTS AND VARIABLES 239
ACKNOWLEDGMENTS 245
LIST OF PUBLICATIONS 247
LIST OF PATENTS 248
REFERENCES 249
IV
|
| any_adam_object | 1 |
| author | Antesberger, Tobias Walter |
| author_facet | Antesberger, Tobias Walter |
| author_role | aut |
| author_sort | Antesberger, Tobias Walter |
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| classification_tum | PHY 690d ELT 280d |
| ctrlnum | (OCoLC)828803716 (DE-599)BVBBV040752802 |
| discipline | Physik Elektrotechnik |
| edition | 1. Aufl. |
| format | Thesis Book |
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| isbn | 9783941650565 |
| language | English |
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| series2 | Selected Topics of Semiconductor Physics and Technology |
| spelling | Antesberger, Tobias Walter Verfasser aut Novel thin film concepts for photovoltaic applications Tobias Walter Antesberger 1. Aufl. Garching b. München Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München 2013 IV, 287 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Selected Topics of Semiconductor Physics and Technology Vol. 156 Zugl.: München, Techn. Univ., Diss., 2012 Fotovoltaik (DE-588)4121476-6 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Fotovoltaik (DE-588)4121476-6 s Silicium (DE-588)4077445-4 s Dünne Schicht (DE-588)4136925-7 s DE-604 Selected Topics of Semiconductor Physics and Technology Vol. 156 (DE-604)BV011499438 156 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025732538&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Antesberger, Tobias Walter Novel thin film concepts for photovoltaic applications Selected Topics of Semiconductor Physics and Technology Fotovoltaik (DE-588)4121476-6 gnd Silicium (DE-588)4077445-4 gnd Dünne Schicht (DE-588)4136925-7 gnd |
| subject_GND | (DE-588)4121476-6 (DE-588)4077445-4 (DE-588)4136925-7 (DE-588)4113937-9 |
| title | Novel thin film concepts for photovoltaic applications |
| title_auth | Novel thin film concepts for photovoltaic applications |
| title_exact_search | Novel thin film concepts for photovoltaic applications |
| title_full | Novel thin film concepts for photovoltaic applications Tobias Walter Antesberger |
| title_fullStr | Novel thin film concepts for photovoltaic applications Tobias Walter Antesberger |
| title_full_unstemmed | Novel thin film concepts for photovoltaic applications Tobias Walter Antesberger |
| title_short | Novel thin film concepts for photovoltaic applications |
| title_sort | novel thin film concepts for photovoltaic applications |
| topic | Fotovoltaik (DE-588)4121476-6 gnd Silicium (DE-588)4077445-4 gnd Dünne Schicht (DE-588)4136925-7 gnd |
| topic_facet | Fotovoltaik Silicium Dünne Schicht Hochschulschrift |
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