Materials and Reliability Handbook for Semiconductor Optical and Electron Devices:
Gespeichert in:
| Format: | Elektronisch E-Book |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
New York, NY
Springer New York
2013
|
| Schlagworte: | |
| Online-Zugang: | TUM01 UBT01 Volltext |
| Beschreibung: | Preface -- Part 1. Materials Issues and Reliability of Optical Devices -- 1. Reliability Testing of Semiconductor Optical Devices -- 2. Failure Analysis of Semiconductor Optical Devices -- 3. Failure Analysis using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication -- 4. Reliability and Degradation of III-V Optical Devices Focusing on Gradual Degradation -- 5. Catastrophic Optical-damage in High Power, Broad-Area Laser-diodes -- 6. Reliability and Degradation of Vertical Cavity Surface Emitting Lasers -- 7. Structural Defects in GaN-based Materials and Their Relation to GaN-based Laser Diodes -- 8. InGaN Laser Diode Degradation -- 9. Radiation-enhanced Dislocation Glide - The Current Status of Research -- 10. Mechanism of Defect Reactions in Semiconductors -- Part 2. Materials Issues and Reliability of Electron Devices -- 11. Reliability Studies in the Real World -- 12. Strain Effects in AlGaN/GaN HEMTs -- 13. Reliability Issues in AlGaN/GaN High Electron Mobility Transistors -- 14. GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors -- 15. Novel Dielectrics for GaN Device Passivation And Improved Reliability -- 16. Reliability Simulation -- 17. The Analysis of Wide Bandgap Semiconductors Using Raman Spectroscopy -- 18. Reliability Study of InP-Based HBTs Operating at High Current Density -- Index. Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.Provides the first handbook to cover all aspects of compound semiconductor device reliabilitySystematically describes research results on reliability and materials issues of both optical and electron devices developed since 2000Covers characterization techniques needed to understand failure mechanisms in compound semiconductor devicesIncludes experimental approaches in reliability studiesPresents case studies of laser degradation and HEMT degradation |
| Beschreibung: | 1 Online-Ressource |
| ISBN: | 9781461443377 |
| DOI: | 10.1007/978-1-4614-4337-7 |
Internformat
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV040751147 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 130214s2013 |||| o||u| ||||||eng d | ||
| 020 | |a 9781461443377 |9 978-1-4614-4337-7 | ||
| 024 | 7 | |a 10.1007/978-1-4614-4337-7 |2 doi | |
| 035 | |a (OCoLC)812054229 | ||
| 035 | |a (DE-599)BVBBV040751147 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-703 |a DE-91 | ||
| 082 | 0 | |a 621.36 | |
| 084 | |a PHY 000 |2 stub | ||
| 245 | 1 | 0 | |a Materials and Reliability Handbook for Semiconductor Optical and Electron Devices |c edited by Osamu Ueda, Stephen J. Pearton |
| 264 | 1 | |a New York, NY |b Springer New York |c 2013 | |
| 300 | |a 1 Online-Ressource | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 500 | |a Preface -- Part 1. Materials Issues and Reliability of Optical Devices -- 1. Reliability Testing of Semiconductor Optical Devices -- 2. Failure Analysis of Semiconductor Optical Devices -- 3. Failure Analysis using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication -- 4. Reliability and Degradation of III-V Optical Devices Focusing on Gradual Degradation -- 5. Catastrophic Optical-damage in High Power, Broad-Area Laser-diodes -- 6. Reliability and Degradation of Vertical Cavity Surface Emitting Lasers -- 7. Structural Defects in GaN-based Materials and Their Relation to GaN-based Laser Diodes -- 8. InGaN Laser Diode Degradation -- 9. Radiation-enhanced Dislocation Glide - The Current Status of Research -- 10. Mechanism of Defect Reactions in Semiconductors -- Part 2. Materials Issues and Reliability of Electron Devices -- 11. Reliability Studies in the Real World -- 12. Strain Effects in AlGaN/GaN HEMTs -- 13. Reliability Issues in AlGaN/GaN High Electron Mobility Transistors -- 14. GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors -- 15. Novel Dielectrics for GaN Device Passivation And Improved Reliability -- 16. Reliability Simulation -- 17. The Analysis of Wide Bandgap Semiconductors Using Raman Spectroscopy -- 18. Reliability Study of InP-Based HBTs Operating at High Current Density -- Index. | ||
| 500 | |a Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.Provides the first handbook to cover all aspects of compound semiconductor device reliabilitySystematically describes research results on reliability and materials issues of both optical and electron devices developed since 2000Covers characterization techniques needed to understand failure mechanisms in compound semiconductor devicesIncludes experimental approaches in reliability studiesPresents case studies of laser degradation and HEMT degradation | ||
| 650 | 4 | |a Physics | |
| 650 | 4 | |a Electronics | |
| 650 | 4 | |a Optical materials | |
| 650 | 4 | |a Surfaces (Physics) | |
| 650 | 4 | |a Optics, Optoelectronics, Plasmonics and Optical Devices | |
| 650 | 4 | |a Optical and Electronic Materials | |
| 650 | 4 | |a Electronics and Microelectronics, Instrumentation | |
| 650 | 4 | |a Electronic Circuits and Devices | |
| 650 | 4 | |a Characterization and Evaluation of Materials | |
| 650 | 4 | |a Laser Technology, Photonics | |
| 700 | 1 | |a Ueda, Osamu |e Sonstige |4 oth | |
| 700 | 1 | |a Pearton, Stephen J. |e Sonstige |4 oth | |
| 856 | 4 | 0 | |u https://doi.org/10.1007/978-1-4614-4337-7 |x Verlag |3 Volltext |
| 912 | |a ZDB-2-PHA | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-025730899 | ||
| 966 | e | |u https://doi.org/10.1007/978-1-4614-4337-7 |l TUM01 |p ZDB-2-PHA |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1007/978-1-4614-4337-7 |l UBT01 |p ZDB-2-PHA |x Verlag |3 Volltext | |
Datensatz im Suchindex
| _version_ | 1804150074381434880 |
|---|---|
| any_adam_object | |
| building | Verbundindex |
| bvnumber | BV040751147 |
| classification_tum | PHY 000 |
| collection | ZDB-2-PHA |
| ctrlnum | (OCoLC)812054229 (DE-599)BVBBV040751147 |
| dewey-full | 621.36 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.36 |
| dewey-search | 621.36 |
| dewey-sort | 3621.36 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1007/978-1-4614-4337-7 |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>04980nmm a2200493zc 4500</leader><controlfield tag="001">BV040751147</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">130214s2013 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781461443377</subfield><subfield code="9">978-1-4614-4337-7</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/978-1-4614-4337-7</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)812054229</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV040751147</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-703</subfield><subfield code="a">DE-91</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.36</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 000</subfield><subfield code="2">stub</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Materials and Reliability Handbook for Semiconductor Optical and Electron Devices</subfield><subfield code="c">edited by Osamu Ueda, Stephen J. Pearton</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">New York, NY</subfield><subfield code="b">Springer New York</subfield><subfield code="c">2013</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Preface -- Part 1. Materials Issues and Reliability of Optical Devices -- 1. Reliability Testing of Semiconductor Optical Devices -- 2. Failure Analysis of Semiconductor Optical Devices -- 3. Failure Analysis using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication -- 4. Reliability and Degradation of III-V Optical Devices Focusing on Gradual Degradation -- 5. Catastrophic Optical-damage in High Power, Broad-Area Laser-diodes -- 6. Reliability and Degradation of Vertical Cavity Surface Emitting Lasers -- 7. Structural Defects in GaN-based Materials and Their Relation to GaN-based Laser Diodes -- 8. InGaN Laser Diode Degradation -- 9. Radiation-enhanced Dislocation Glide - The Current Status of Research -- 10. Mechanism of Defect Reactions in Semiconductors -- Part 2. Materials Issues and Reliability of Electron Devices -- 11. Reliability Studies in the Real World -- 12. Strain Effects in AlGaN/GaN HEMTs -- 13. Reliability Issues in AlGaN/GaN High Electron Mobility Transistors -- 14. GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors -- 15. Novel Dielectrics for GaN Device Passivation And Improved Reliability -- 16. Reliability Simulation -- 17. The Analysis of Wide Bandgap Semiconductors Using Raman Spectroscopy -- 18. Reliability Study of InP-Based HBTs Operating at High Current Density -- Index.</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.Provides the first handbook to cover all aspects of compound semiconductor device reliabilitySystematically describes research results on reliability and materials issues of both optical and electron devices developed since 2000Covers characterization techniques needed to understand failure mechanisms in compound semiconductor devicesIncludes experimental approaches in reliability studiesPresents case studies of laser degradation and HEMT degradation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Physics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronics</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Optical materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Surfaces (Physics)</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Optics, Optoelectronics, Plasmonics and Optical Devices</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Optical and Electronic Materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronics and Microelectronics, Instrumentation</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electronic Circuits and Devices</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Characterization and Evaluation of Materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Laser Technology, Photonics</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ueda, Osamu</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pearton, Stephen J.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/978-1-4614-4337-7</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-PHA</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-025730899</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4614-4337-7</subfield><subfield code="l">TUM01</subfield><subfield code="p">ZDB-2-PHA</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4614-4337-7</subfield><subfield code="l">UBT01</subfield><subfield code="p">ZDB-2-PHA</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV040751147 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T00:33:08Z |
| institution | BVB |
| isbn | 9781461443377 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-025730899 |
| oclc_num | 812054229 |
| open_access_boolean | |
| owner | DE-703 DE-91 DE-BY-TUM |
| owner_facet | DE-703 DE-91 DE-BY-TUM |
| physical | 1 Online-Ressource |
| psigel | ZDB-2-PHA |
| publishDate | 2013 |
| publishDateSearch | 2013 |
| publishDateSort | 2013 |
| publisher | Springer New York |
| record_format | marc |
| spelling | Materials and Reliability Handbook for Semiconductor Optical and Electron Devices edited by Osamu Ueda, Stephen J. Pearton New York, NY Springer New York 2013 1 Online-Ressource txt rdacontent c rdamedia cr rdacarrier Preface -- Part 1. Materials Issues and Reliability of Optical Devices -- 1. Reliability Testing of Semiconductor Optical Devices -- 2. Failure Analysis of Semiconductor Optical Devices -- 3. Failure Analysis using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication -- 4. Reliability and Degradation of III-V Optical Devices Focusing on Gradual Degradation -- 5. Catastrophic Optical-damage in High Power, Broad-Area Laser-diodes -- 6. Reliability and Degradation of Vertical Cavity Surface Emitting Lasers -- 7. Structural Defects in GaN-based Materials and Their Relation to GaN-based Laser Diodes -- 8. InGaN Laser Diode Degradation -- 9. Radiation-enhanced Dislocation Glide - The Current Status of Research -- 10. Mechanism of Defect Reactions in Semiconductors -- Part 2. Materials Issues and Reliability of Electron Devices -- 11. Reliability Studies in the Real World -- 12. Strain Effects in AlGaN/GaN HEMTs -- 13. Reliability Issues in AlGaN/GaN High Electron Mobility Transistors -- 14. GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors -- 15. Novel Dielectrics for GaN Device Passivation And Improved Reliability -- 16. Reliability Simulation -- 17. The Analysis of Wide Bandgap Semiconductors Using Raman Spectroscopy -- 18. Reliability Study of InP-Based HBTs Operating at High Current Density -- Index. Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.Provides the first handbook to cover all aspects of compound semiconductor device reliabilitySystematically describes research results on reliability and materials issues of both optical and electron devices developed since 2000Covers characterization techniques needed to understand failure mechanisms in compound semiconductor devicesIncludes experimental approaches in reliability studiesPresents case studies of laser degradation and HEMT degradation Physics Electronics Optical materials Surfaces (Physics) Optics, Optoelectronics, Plasmonics and Optical Devices Optical and Electronic Materials Electronics and Microelectronics, Instrumentation Electronic Circuits and Devices Characterization and Evaluation of Materials Laser Technology, Photonics Ueda, Osamu Sonstige oth Pearton, Stephen J. Sonstige oth https://doi.org/10.1007/978-1-4614-4337-7 Verlag Volltext |
| spellingShingle | Materials and Reliability Handbook for Semiconductor Optical and Electron Devices Physics Electronics Optical materials Surfaces (Physics) Optics, Optoelectronics, Plasmonics and Optical Devices Optical and Electronic Materials Electronics and Microelectronics, Instrumentation Electronic Circuits and Devices Characterization and Evaluation of Materials Laser Technology, Photonics |
| title | Materials and Reliability Handbook for Semiconductor Optical and Electron Devices |
| title_auth | Materials and Reliability Handbook for Semiconductor Optical and Electron Devices |
| title_exact_search | Materials and Reliability Handbook for Semiconductor Optical and Electron Devices |
| title_full | Materials and Reliability Handbook for Semiconductor Optical and Electron Devices edited by Osamu Ueda, Stephen J. Pearton |
| title_fullStr | Materials and Reliability Handbook for Semiconductor Optical and Electron Devices edited by Osamu Ueda, Stephen J. Pearton |
| title_full_unstemmed | Materials and Reliability Handbook for Semiconductor Optical and Electron Devices edited by Osamu Ueda, Stephen J. Pearton |
| title_short | Materials and Reliability Handbook for Semiconductor Optical and Electron Devices |
| title_sort | materials and reliability handbook for semiconductor optical and electron devices |
| topic | Physics Electronics Optical materials Surfaces (Physics) Optics, Optoelectronics, Plasmonics and Optical Devices Optical and Electronic Materials Electronics and Microelectronics, Instrumentation Electronic Circuits and Devices Characterization and Evaluation of Materials Laser Technology, Photonics |
| topic_facet | Physics Electronics Optical materials Surfaces (Physics) Optics, Optoelectronics, Plasmonics and Optical Devices Optical and Electronic Materials Electronics and Microelectronics, Instrumentation Electronic Circuits and Devices Characterization and Evaluation of Materials Laser Technology, Photonics |
| url | https://doi.org/10.1007/978-1-4614-4337-7 |
| work_keys_str_mv | AT uedaosamu materialsandreliabilityhandbookforsemiconductoropticalandelectrondevices AT peartonstephenj materialsandreliabilityhandbookforsemiconductoropticalandelectrondevices |