Verfügbarkeit: Electrical detection of hyperfine interactions in Silicon

Electrical detection of hyperfine interactions in Silicon:

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Bibliographische Detailangaben
1. Verfasser:	Hoehne, Felix 1980- (VerfasserIn)
Format:	Abschlussarbeit Buch
Sprache:	English
Veröffentlicht:	Garching b. München Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München 2012
Ausgabe:	1. Aufl.
Schriftenreihe:	Selected Topics of Semiconductor Physics and Technology Vol. 151
Schlagworte:	Silicium Gitterbaufehler EDMR Hyperfeinwechselwirkung Hochschulschrift
Online-Zugang:	Inhaltsverzeichnis
Beschreibung:	VI, 181 S. Ill., graph. Darst.
ISBN:	9783941650510

Internformat

MARC


LEADER	00000nam a2200000 cb4500
001	BV040711476
003	DE-604
005	20180508
007	t
008	130131s2012 ad\|\| m\|\|\| 00\|\|\| eng d
016	7		\|a 1030324174 \|2 DE-101
020			\|a 9783941650510 \|c Pb. : EUR 15.00 (DE), EUR 15.50 (AT) \|9 978-3-941650-51-0
035			\|a (OCoLC)826628821
035			\|a (DE-599)BVBBV040711476
040			\|a DE-604 \|b ger \|e rakddb
041	0		\|a eng
049			\|a DE-12 \|a DE-91 \|a DE-384
082	0		\|a 537.6226 \|2 22//ger
084			\|a UP 3150 \|0 (DE-625)146377: \|2 rvk
084			\|a PHY 751d \|2 stub
084			\|a PHY 621d \|2 stub
084			\|a PHY 690d \|2 stub
100	1		\|a Hoehne, Felix \|d 1980- \|e Verfasser \|0 (DE-588)137870507 \|4 aut
245	1	0	\|a Electrical detection of hyperfine interactions in Silicon \|c Felix Hoehne
250			\|a 1. Aufl.
264		1	\|a Garching b. München \|b Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München \|c 2012
300			\|a VI, 181 S. \|b Ill., graph. Darst.
336			\|b txt \|2 rdacontent
337			\|b n \|2 rdamedia
338			\|b nc \|2 rdacarrier
490	1		\|a Selected Topics of Semiconductor Physics and Technology \|v Vol. 151
502			\|a Zugl.: München, Techn. Univ., Diss., 2012
650	0	7	\|a Silicium \|0 (DE-588)4077445-4 \|2 gnd \|9 rswk-swf
650	0	7	\|a Gitterbaufehler \|0 (DE-588)4125030-8 \|2 gnd \|9 rswk-swf
650	0	7	\|a EDMR \|0 (DE-588)4521000-7 \|2 gnd \|9 rswk-swf
650	0	7	\|a Hyperfeinwechselwirkung \|0 (DE-588)4161053-2 \|2 gnd \|9 rswk-swf
655		7	\|0 (DE-588)4113937-9 \|a Hochschulschrift \|2 gnd-content
689	0	0	\|a Silicium \|0 (DE-588)4077445-4 \|D s
689	0	1	\|a Gitterbaufehler \|0 (DE-588)4125030-8 \|D s
689	0	2	\|a Hyperfeinwechselwirkung \|0 (DE-588)4161053-2 \|D s
689	0	3	\|a EDMR \|0 (DE-588)4521000-7 \|D s
689	0		\|5 DE-604
830		0	\|a Selected Topics of Semiconductor Physics and Technology \|v Vol. 151 \|w (DE-604)BV011499438 \|9 151
856	4	2	\|m DNB Datenaustausch \|q application/pdf \|u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025691809&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA \|3 Inhaltsverzeichnis
999			\|a oai:aleph.bib-bvb.de:BVB01-025691809

Datensatz im Suchindex

_version_	1804150018453536768
adam_text	IMAGE 1 CONTENTS INTRODUCTION 1 A P U L S E D E D M R P R I M E R 7 2.1 ELECTRON SPIN RESONANCE AND THE SPIN HAMILTONIAN 7 2.1.1 PHOSPHORUS DONORS IN SILICON 10 2.1.2 DANGLING BOND DEFECTS A T THE SI/SI0 2 INTERFACE 13 2.1.3 T H E SL1 CENTER 15 2.2 ELECTRICALLY DETECTED MAGNETIC RESONANCE 15 2.3 PULSED E D M R 18 2.4 THE SPIN ECHO 20 2.5 SPIN-TO-CHARGE CONVERSION 22 2.5.1 CONTINUOUS-WAVE ILLUMINATION 22 2.5.2 PULSED ILLUMINATION 22 2.6 EXPERIMENTAL SETUP 24 S P I N - D E P E N D E N T P R O C E S S E S A T T H E SI/SIC 2 INTERFACE 2 7 3.1 E D M R OF SPIN PAIRS A T THE SI/SI02 INTERFACE 27 3.2 IDENTIFICATION OF THE RECOMBINATION PROCESS 31 3.3 CONCLUSIONS AND OUTLOOK 36 P U L S E D E D M R CHARACTERIZATION O F T H E 3 1 P - P B O S P I N PAIR 3 7 4.1 LOCK-IN DETECTION SCHEME FOR PULSED E D M R 37 4.2 HIGH-RESOLUTION ELECTRICAL DETECTION OF FID AND SPIN ECHOES 4 3 4.2.1 ELECTRICALLY DETECTED FREE INDUCTION DECAY 4 3 4.2.2 ELECTRICALLY DETECTED HAHN ECHO 47 4.2.3 SPIN-SPIN COUPLING 50 4.3 D E E R MEASUREMENT OF THE 31P-PBO SPIN-SPIN COUPLING 53 4.4 CONCLUSIONS AND OUTLOOK 61 S P I N - D E P E N D E N T P R O C E S S E S IN 7 -IRRADIATED SILICON 6 3 5.1 THE VO-CENTER IN 7-IRRADIATED SILICON 6 3 5.2 E D M R OF SPIN PAIRS IN 7-IRRADIATED SILICON 67 5.3 IDENTIFICATION OF THE RECOMBINATION PROCESS 72 V HTTP://D-NB.INFO/1030324174 IMAGE 2 VI CONTENTS 5.4 CONCLUSIONS AND OUTLOOK 79 DETERMINATION O F T H E T I M E C O N S T A N T S O F S P I N - D E P E N D E N T R E C O M B I N A T I O N P R O CESSES 8 1 6.1 RECOMBINATION PROCESS 82 6.2 RATE EQUATION MODEL 84 6.3 EXPERIMENTAL DETAILS 86 6.4 RECOMBINATION RATE OF AIITIPARALLEL SPIN PAIRS 87 6.5 GENERATION RATE OF SPIN PAIRS 90 6.6 RECOMBINATION RATE OF PARALLEL SPIN PAIRS 94 6.7 PULSED EDMR PHOTOCURRENT TRANSIENTS 98 6.8 CONSEQUENCES OF A BROAD DISTRIBUTION OF RECOMBINATION TIMECONSTANTS . . . 102 6.9 CONCLUSIONS AND OUTLOOK 105 ELECTRICALLY D E T E C T E D ELECTRON SPIN E C H O ENVELOPE M O D U L A T I O N 1 0 7 7.1 THE ESEEM EFFECT IN A MODEL SPIN SYSTEM 108 7.2 EDESEEM OF 31P DONORS IN SI I L L 7.3 EDESEEM OF PBO CENTERS A T THE SI/SI02 INTERFACE 116 7.4 CONCLUSIONS AND OUTLOOK 123 ELECTRICALLY D E T E C T E D ELECTRON NUCLEAR D O U B L E R E S O N A N C E 1 2 5 8.1 EDENDOR UNDER CONTINUOUS OPTICAL EXCITATION . . . * 126 8.2 EDENDOR UNDER PULSED OPTICAL EXCITATION 132 8.3 HYPERPOLARIZATION OF 3 1 P NUCLEI 139 8.4 CONCLUSIONS AND OUTLOOK 150 SUMMARY 1 5 1 A P P E N D I X 152 A ANALYTICAL EXPRESSION DESCRIBING T H E E D F I D P A T T E R N 1 5 3 B NUMERICAL M O D E L I N G O F T H E E D F I D P A T T E R N 1 5 5 C STRECHTED EXPONENTIAL 1 5 7 D DERIVATION O F T H E T I M E C O N S T A N T O F T H E FILL P U L S E SPACING E X P E R I M E N T 1 5 9 E DERIVATION O F T H E 2-PULSE E D E S E E M M O D U L A T I O N FORMULA 1 6 1 LIST O F PUBLICATIONS 165 ACKNOWLEDGMENTS 1 6 7
any_adam_object	1
author	Hoehne, Felix 1980-
author_GND	(DE-588)137870507
author_facet	Hoehne, Felix 1980-
author_role	aut
author_sort	Hoehne, Felix 1980-
author_variant	f h fh
building	Verbundindex
bvnumber	BV040711476
classification_rvk	UP 3150
classification_tum	PHY 751d PHY 621d PHY 690d
ctrlnum	(OCoLC)826628821 (DE-599)BVBBV040711476
dewey-full	537.6226
dewey-hundreds	500 - Natural sciences and mathematics
dewey-ones	537 - Electricity and electronics
dewey-raw	537.6226
dewey-search	537.6226
dewey-sort	3537.6226
dewey-tens	530 - Physics
discipline	Physik
edition	1. Aufl.
format	Thesis Book
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02162nam a2200505 cb4500</leader><controlfield tag="001">BV040711476</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20180508 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">130131s2012 ad\|\| m\|\|\| 00\|\|\| eng d</controlfield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">1030324174</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783941650510</subfield><subfield code="c">Pb. : EUR 15.00 (DE), EUR 15.50 (AT)</subfield><subfield code="9">978-3-941650-51-0</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)826628821</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV040711476</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-12</subfield><subfield code="a">DE-91</subfield><subfield code="a">DE-384</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">537.6226</subfield><subfield code="2">22//ger</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3150</subfield><subfield code="0">(DE-625)146377:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 751d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 621d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 690d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Hoehne, Felix</subfield><subfield code="d">1980-</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)137870507</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electrical detection of hyperfine interactions in Silicon</subfield><subfield code="c">Felix Hoehne</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">1. Aufl.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Garching b. München</subfield><subfield code="b">Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München</subfield><subfield code="c">2012</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">VI, 181 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Selected Topics of Semiconductor Physics and Technology</subfield><subfield code="v">Vol. 151</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="a">Zugl.: München, Techn. Univ., Diss., 2012</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Gitterbaufehler</subfield><subfield code="0">(DE-588)4125030-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">EDMR</subfield><subfield code="0">(DE-588)4521000-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Hyperfeinwechselwirkung</subfield><subfield code="0">(DE-588)4161053-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Gitterbaufehler</subfield><subfield code="0">(DE-588)4125030-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Hyperfeinwechselwirkung</subfield><subfield code="0">(DE-588)4161053-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">EDMR</subfield><subfield code="0">(DE-588)4521000-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Selected Topics of Semiconductor Physics and Technology</subfield><subfield code="v">Vol. 151</subfield><subfield code="w">(DE-604)BV011499438</subfield><subfield code="9">151</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025691809&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-025691809</subfield></datafield></record></collection>
genre	(DE-588)4113937-9 Hochschulschrift gnd-content
genre_facet	Hochschulschrift
id	DE-604.BV040711476
illustrated	Illustrated
indexdate	2024-07-10T00:32:15Z
institution	BVB
isbn	9783941650510
language	English
oai_aleph_id	oai:aleph.bib-bvb.de:BVB01-025691809
oclc_num	826628821
open_access_boolean
owner	DE-12 DE-91 DE-BY-TUM DE-384
owner_facet	DE-12 DE-91 DE-BY-TUM DE-384
physical	VI, 181 S. Ill., graph. Darst.
publishDate	2012
publishDateSearch	2012
publishDateSort	2012
publisher	Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München
record_format	marc
series	Selected Topics of Semiconductor Physics and Technology
series2	Selected Topics of Semiconductor Physics and Technology
spelling	Hoehne, Felix 1980- Verfasser (DE-588)137870507 aut Electrical detection of hyperfine interactions in Silicon Felix Hoehne 1. Aufl. Garching b. München Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München 2012 VI, 181 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Selected Topics of Semiconductor Physics and Technology Vol. 151 Zugl.: München, Techn. Univ., Diss., 2012 Silicium (DE-588)4077445-4 gnd rswk-swf Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf EDMR (DE-588)4521000-7 gnd rswk-swf Hyperfeinwechselwirkung (DE-588)4161053-2 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Silicium (DE-588)4077445-4 s Gitterbaufehler (DE-588)4125030-8 s Hyperfeinwechselwirkung (DE-588)4161053-2 s EDMR (DE-588)4521000-7 s DE-604 Selected Topics of Semiconductor Physics and Technology Vol. 151 (DE-604)BV011499438 151 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025691809&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis
spellingShingle	Hoehne, Felix 1980- Electrical detection of hyperfine interactions in Silicon Selected Topics of Semiconductor Physics and Technology Silicium (DE-588)4077445-4 gnd Gitterbaufehler (DE-588)4125030-8 gnd EDMR (DE-588)4521000-7 gnd Hyperfeinwechselwirkung (DE-588)4161053-2 gnd
subject_GND	(DE-588)4077445-4 (DE-588)4125030-8 (DE-588)4521000-7 (DE-588)4161053-2 (DE-588)4113937-9
title	Electrical detection of hyperfine interactions in Silicon
title_auth	Electrical detection of hyperfine interactions in Silicon
title_exact_search	Electrical detection of hyperfine interactions in Silicon
title_full	Electrical detection of hyperfine interactions in Silicon Felix Hoehne
title_fullStr	Electrical detection of hyperfine interactions in Silicon Felix Hoehne
title_full_unstemmed	Electrical detection of hyperfine interactions in Silicon Felix Hoehne
title_short	Electrical detection of hyperfine interactions in Silicon
title_sort	electrical detection of hyperfine interactions in silicon
topic	Silicium (DE-588)4077445-4 gnd Gitterbaufehler (DE-588)4125030-8 gnd EDMR (DE-588)4521000-7 gnd Hyperfeinwechselwirkung (DE-588)4161053-2 gnd
topic_facet	Silicium Gitterbaufehler EDMR Hyperfeinwechselwirkung Hochschulschrift
url	http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025691809&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
volume_link	(DE-604)BV011499438
work_keys_str_mv	AT hoehnefelix electricaldetectionofhyperfineinteractionsinsilicon

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