Electrodeposition of Si, Ge and of SixGe1-x from ionic liquids: thin films, nanowires and photonic crystals
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Clausthal-Zellerfeld
Papierflieger
2010
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| Ausgabe: | 1. Aufl. |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | VII, 92 S. Ill., graph. Darst. |
| ISBN: | 9783869480640 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV040704501 | ||
| 003 | DE-604 | ||
| 005 | 20130211 | ||
| 007 | t | ||
| 008 | 130128s2010 gw ad|| m||| 00||| eng d | ||
| 015 | |a 10,N12 |2 dnb | ||
| 015 | |a 13,A01 |2 dnb | ||
| 016 | 7 | |a 1000878627 |2 DE-101 | |
| 020 | |a 9783869480640 |9 978-3-86948-064-0 | ||
| 024 | 3 | |a 9783869480640 | |
| 035 | |a (OCoLC)914566356 | ||
| 035 | |a (DE-599)DNB1000878627 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 044 | |a gw |c XA-DE-NI | ||
| 049 | |a DE-634 | ||
| 082 | 0 | |a 671.732 |2 22/ger | |
| 084 | |a UP 7500 |0 (DE-625)146433: |2 rvk | ||
| 084 | |a 670 |2 sdnb | ||
| 100 | 1 | |a Salman, Rihab Mahmoud al- |d 1980- |e Verfasser |0 (DE-588)140848886 |4 aut | |
| 245 | 1 | 0 | |a Electrodeposition of Si, Ge and of SixGe1-x from ionic liquids |b thin films, nanowires and photonic crystals |c vorgelegt von Rihab Mahmoud al-Salman |
| 250 | |a 1. Aufl. | ||
| 264 | 1 | |a Clausthal-Zellerfeld |b Papierflieger |c 2010 | |
| 300 | |a VII, 92 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |a Zugl.: Clausthal, Techn. Univ., Diss., 2009 | ||
| 650 | 0 | 7 | |a Nanostruktur |0 (DE-588)4204530-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Galvanische Abscheidung |0 (DE-588)4316091-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Ionische Flüssigkeit |0 (DE-588)7548899-1 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Ionische Flüssigkeit |0 (DE-588)7548899-1 |D s |
| 689 | 0 | 1 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | 2 | |a Nanostruktur |0 (DE-588)4204530-7 |D s |
| 689 | 0 | 3 | |a Galvanische Abscheidung |0 (DE-588)4316091-8 |D s |
| 689 | 0 | |5 DE-604 | |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025684964&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-025684964 | ||
Datensatz im Suchindex
| _version_ | 1804150008596922369 |
|---|---|
| adam_text | CONTENT 1. INTRODUCTION. 1.1 IONIC LIQUIDS 1 1.1.1 DEFINITION AND
HISTORY 1 1.1.2 WHY ARE IONIC LIQUIDS INTERESTING SOLVENTS FOR
ELECTROCHEMISTRY? 3 1.1.2.1 ELECTROCHEMICAL WINDOW ...A 1.1.2.2
SOLVATING ABILITY 5 1.1.2.3 CONDUCTIVITY AND VISCOSITY 6 1.1.2.4 THERMAL
STABILITY AND VOLATILITY 7 1.1.2.5 MELTING POINT 7 1.1.2.6 DENSITY 8
1.1.3 IMPURITIES IN IONIC LIQUIDS 8 1.1.4 POTENTIAL OF IONIC LIQUIDS IN
ELECTROCHEMICAL DEPOSITION 9 1.1.4.1 ELECTRODEPOSITION OF METALS AND
ALLOYS 9 1.1.4.2 ELECTRODEPOSITION OF SEMICONDUCTORS 10 1.1.4.3
ELECTROSYNTHESIS OF CONDUCTING POLYMERS 13 1.2 SEMICONDUCTOR
NANOMATERIALS 14 1.2.1 BRIEF INTRODUCTION 14 1.2.2 SEMICONDUCTOR
NANOWIRES 16 1.2.3 SEMICONDUCTOR PHOTONIC CRYSTALS 18 2. EXPERIMENTAL 22
2.1 CHEMICALS 22 2.2 SETUP AND ELECTROCHEMICAL CELL 23 2.3
ELECTRODEPOSITION OF SI, GE AND SI X GEI. X THIN FILMS 25 2.4
ELECTRODEPOSITION OF SI, GE AND SI X GEI. X NANOWIRES 25 2.5
ELECTRODEPOSITION OF GE AND SIJGE^ PHOTONIC CRYSTALS 27 2.6 METHODS 29
2.6.1 CYCLIC VOLTAMMETRY 29 2.6.2 SEM AND EDX 32 2.6.3 X-RAY
PHOTOELECTRON SPECTROSCOPY (XPS) 34 3. RESULTS AND DISCUSSION 36 3.1
ELECTRODEPOSITION OF SI, GE AND SI X BIBLIOGRAFISCHE INFORMATIONEN
HTTP://D-NB.INFO/1000878627 DIGITALISIERT DURCH 3.1.3 ELECTRODEPOSITION
OF SI X GEI. X 44 3.1.3.1 ELECTRODEPOSITION OF SIXGEI.X FROM [PYI, 4 ]TF
2 N 44 3.1.3.2 ELECTRODEPOSITION OF SIXGEI.X FROM [EMIM]TF 2 N 51
3.1.3.3 ATTEMPTS TO THE ELECTRODEPOSITION OF SI X GEI-X FROM [HMIM]FAP
55 3.1.4 CONCLUSION 58 3.2 ELECTRODEPOSITION OF SI, GE AND SI X GEI. X
NANOWIRES 59 3.2.1 ELECTRODEPOSITION OF GERMANIUM NANOWIRES 59 3.2.2
ELECTRODEPOSITION OF SILICON NANOWIRES 63 3.2.3 ELECTRODEPOSITION OF
SIJGEI-X NANOWIRES 66 3.2.3.1 SIXGEI-X NANOWIRES FROM [PYI, 4 ]TF 2 N 66
3.2.3.2 SIXGEI.X NANOWIRES FROM [EMIM]TF 2 N 68 3.2.4 CONCLUSION 71 3.3
ELECTRODEPOSITION OF GE AND SI X GEI_ X PHOTONIC CRYSTALS 72 3.3.1
ELECTRODEPOSITION OF GE PHOTONIC CRYSTALS 72 3.3.2 ELECTRODEPOSITION OF
SIXGEI-X PHOTONIC CRYSTALS 78 3.3.3 CONCLUSION 81 4. SUMMARY 83 4.1
ELECTRODEPOSITION OF SI, GE AND SI X GEI. X THIN FILMS 83 4.2
ELECTRODEPOSITION OF SI, GE AND SI X GEI_ X NANOWIRES 84 4.
|
| any_adam_object | 1 |
| author | Salman, Rihab Mahmoud al- 1980- |
| author_GND | (DE-588)140848886 |
| author_facet | Salman, Rihab Mahmoud al- 1980- |
| author_role | aut |
| author_sort | Salman, Rihab Mahmoud al- 1980- |
| author_variant | r m a s rma rmas |
| building | Verbundindex |
| bvnumber | BV040704501 |
| classification_rvk | UP 7500 |
| ctrlnum | (OCoLC)914566356 (DE-599)DNB1000878627 |
| dewey-full | 671.732 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 671 - Metalworking & primary metal products |
| dewey-raw | 671.732 |
| dewey-search | 671.732 |
| dewey-sort | 3671.732 |
| dewey-tens | 670 - Manufacturing |
| discipline | Physik Werkstoffwissenschaften / Fertigungstechnik |
| edition | 1. Aufl. |
| format | Thesis Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02025nam a2200505 c 4500</leader><controlfield tag="001">BV040704501</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20130211 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">130128s2010 gw ad|| m||| 00||| eng d</controlfield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">10,N12</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">13,A01</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">1000878627</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783869480640</subfield><subfield code="9">978-3-86948-064-0</subfield></datafield><datafield tag="024" ind1="3" ind2=" "><subfield code="a">9783869480640</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)914566356</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DNB1000878627</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">XA-DE-NI</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-634</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">671.732</subfield><subfield code="2">22/ger</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 7500</subfield><subfield code="0">(DE-625)146433:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">670</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Salman, Rihab Mahmoud al-</subfield><subfield code="d">1980-</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)140848886</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electrodeposition of Si, Ge and of SixGe1-x from ionic liquids</subfield><subfield code="b">thin films, nanowires and photonic crystals</subfield><subfield code="c">vorgelegt von Rihab Mahmoud al-Salman</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">1. Aufl.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Clausthal-Zellerfeld</subfield><subfield code="b">Papierflieger</subfield><subfield code="c">2010</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">VII, 92 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="a">Zugl.: Clausthal, Techn. Univ., Diss., 2009</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Nanostruktur</subfield><subfield code="0">(DE-588)4204530-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Galvanische Abscheidung</subfield><subfield code="0">(DE-588)4316091-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Ionische Flüssigkeit</subfield><subfield code="0">(DE-588)7548899-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Ionische Flüssigkeit</subfield><subfield code="0">(DE-588)7548899-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Nanostruktur</subfield><subfield code="0">(DE-588)4204530-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Galvanische Abscheidung</subfield><subfield code="0">(DE-588)4316091-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025684964&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-025684964</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV040704501 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T00:32:06Z |
| institution | BVB |
| isbn | 9783869480640 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-025684964 |
| oclc_num | 914566356 |
| open_access_boolean | |
| owner | DE-634 |
| owner_facet | DE-634 |
| physical | VII, 92 S. Ill., graph. Darst. |
| publishDate | 2010 |
| publishDateSearch | 2010 |
| publishDateSort | 2010 |
| publisher | Papierflieger |
| record_format | marc |
| spelling | Salman, Rihab Mahmoud al- 1980- Verfasser (DE-588)140848886 aut Electrodeposition of Si, Ge and of SixGe1-x from ionic liquids thin films, nanowires and photonic crystals vorgelegt von Rihab Mahmoud al-Salman 1. Aufl. Clausthal-Zellerfeld Papierflieger 2010 VII, 92 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Zugl.: Clausthal, Techn. Univ., Diss., 2009 Nanostruktur (DE-588)4204530-7 gnd rswk-swf Galvanische Abscheidung (DE-588)4316091-8 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Ionische Flüssigkeit (DE-588)7548899-1 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Ionische Flüssigkeit (DE-588)7548899-1 s Halbleiter (DE-588)4022993-2 s Nanostruktur (DE-588)4204530-7 s Galvanische Abscheidung (DE-588)4316091-8 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025684964&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Salman, Rihab Mahmoud al- 1980- Electrodeposition of Si, Ge and of SixGe1-x from ionic liquids thin films, nanowires and photonic crystals Nanostruktur (DE-588)4204530-7 gnd Galvanische Abscheidung (DE-588)4316091-8 gnd Halbleiter (DE-588)4022993-2 gnd Ionische Flüssigkeit (DE-588)7548899-1 gnd |
| subject_GND | (DE-588)4204530-7 (DE-588)4316091-8 (DE-588)4022993-2 (DE-588)7548899-1 (DE-588)4113937-9 |
| title | Electrodeposition of Si, Ge and of SixGe1-x from ionic liquids thin films, nanowires and photonic crystals |
| title_auth | Electrodeposition of Si, Ge and of SixGe1-x from ionic liquids thin films, nanowires and photonic crystals |
| title_exact_search | Electrodeposition of Si, Ge and of SixGe1-x from ionic liquids thin films, nanowires and photonic crystals |
| title_full | Electrodeposition of Si, Ge and of SixGe1-x from ionic liquids thin films, nanowires and photonic crystals vorgelegt von Rihab Mahmoud al-Salman |
| title_fullStr | Electrodeposition of Si, Ge and of SixGe1-x from ionic liquids thin films, nanowires and photonic crystals vorgelegt von Rihab Mahmoud al-Salman |
| title_full_unstemmed | Electrodeposition of Si, Ge and of SixGe1-x from ionic liquids thin films, nanowires and photonic crystals vorgelegt von Rihab Mahmoud al-Salman |
| title_short | Electrodeposition of Si, Ge and of SixGe1-x from ionic liquids |
| title_sort | electrodeposition of si ge and of sixge1 x from ionic liquids thin films nanowires and photonic crystals |
| title_sub | thin films, nanowires and photonic crystals |
| topic | Nanostruktur (DE-588)4204530-7 gnd Galvanische Abscheidung (DE-588)4316091-8 gnd Halbleiter (DE-588)4022993-2 gnd Ionische Flüssigkeit (DE-588)7548899-1 gnd |
| topic_facet | Nanostruktur Galvanische Abscheidung Halbleiter Ionische Flüssigkeit Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025684964&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT salmanrihabmahmoudal electrodepositionofsigeandofsixge1xfromionicliquidsthinfilmsnanowiresandphotoniccrystals |