Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping:
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
2006
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| Online-Zugang: | Volltext Volltext |
| Beschreibung: | Aus: The European Physical Journal Applied Physics ; 34. 2006 |
| Beschreibung: | 1 Online-Ressource |
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Datensatz im Suchindex
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| spelling | Künecke, Ulrike Verfasser aut Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping U. Künecke ; P. J. Wellmann 2006 1 Online-Ressource txt rdacontent c rdamedia cr rdacarrier Aus: The European Physical Journal Applied Physics ; 34. 2006 Wellmann, Peter 1966- Verfasser (DE-588)123020069 aut https://open.fau.de/handle/openfau/2864 Verlag kostenfrei Volltext https://nbn-resolving.org/urn:nbn:de:bvb:29-opus-40986 Resolving-System kostenfrei Volltext |
| spellingShingle | Künecke, Ulrike Wellmann, Peter 1966- Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping |
| title | Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping |
| title_auth | Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping |
| title_exact_search | Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping |
| title_full | Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping U. Künecke ; P. J. Wellmann |
| title_fullStr | Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping U. Künecke ; P. J. Wellmann |
| title_full_unstemmed | Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping U. Künecke ; P. J. Wellmann |
| title_short | Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping |
| title_sort | influence of dislocation content on the quantitative determination of the doping level distribution in n gaas using absorption mapping |
| url | https://open.fau.de/handle/openfau/2864 https://nbn-resolving.org/urn:nbn:de:bvb:29-opus-40986 |
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