Growth and properties of In(Ga)As nanowires on silicon:
Gespeichert in:
1. Verfasser: | |
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Format: | Abschlussarbeit Buch |
Sprache: | English |
Veröffentlicht: |
Garching b. München
Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München
2012
|
Ausgabe: | 1. Aufl. |
Schriftenreihe: | Selected Topics of Semiconductor Physics and Technology
Vol. 144 |
Schlagworte: | |
Beschreibung: | VII, 152 S. Ill., graph. Darst. |
ISBN: | 9783941650442 |
Internformat
MARC
LEADER | 00000nam a2200000 cb4500 | ||
---|---|---|---|
001 | BV040592208 | ||
003 | DE-604 | ||
005 | 20150330 | ||
007 | t | ||
008 | 121127s2012 ad|| m||| 00||| eng d | ||
020 | |a 9783941650442 |c Pb. : EUR 15.00 (DE), EUR 15.50 (AT) |9 978-3-941650-44-2 | ||
035 | |a (OCoLC)820425635 | ||
035 | |a (DE-599)BVBBV040592208 | ||
040 | |a DE-604 |b ger |e rakddb | ||
041 | 0 | |a eng | |
049 | |a DE-12 |a DE-91 | ||
082 | 0 | |a 537.622 |2 22//ger | |
084 | |a ELT 280d |2 stub | ||
084 | |a PHY 693d |2 stub | ||
084 | |a PHY 697d |2 stub | ||
100 | 1 | |a Hertenberger, Simon |e Verfasser |4 aut | |
245 | 1 | 0 | |a Growth and properties of In(Ga)As nanowires on silicon |c Simon Hertenberger |
250 | |a 1. Aufl. | ||
264 | 1 | |a Garching b. München |b Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München |c 2012 | |
300 | |a VII, 152 S. |b Ill., graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 1 | |a Selected Topics of Semiconductor Physics and Technology |v Vol. 144 | |
502 | |a Zugl.: München, Techn. Univ., Diss., 2012 | ||
655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
830 | 0 | |a Selected Topics of Semiconductor Physics and Technology |v Vol. 144 |w (DE-604)BV011499438 |9 144 | |
999 | |a oai:aleph.bib-bvb.de:BVB01-025420115 |
Datensatz im Suchindex
_version_ | 1804149678315405312 |
---|---|
any_adam_object | |
author | Hertenberger, Simon |
author_facet | Hertenberger, Simon |
author_role | aut |
author_sort | Hertenberger, Simon |
author_variant | s h sh |
building | Verbundindex |
bvnumber | BV040592208 |
classification_tum | ELT 280d PHY 693d PHY 697d |
ctrlnum | (OCoLC)820425635 (DE-599)BVBBV040592208 |
dewey-full | 537.622 |
dewey-hundreds | 500 - Natural sciences and mathematics |
dewey-ones | 537 - Electricity and electronics |
dewey-raw | 537.622 |
dewey-search | 537.622 |
dewey-sort | 3537.622 |
dewey-tens | 530 - Physics |
discipline | Physik Elektrotechnik |
edition | 1. Aufl. |
format | Thesis Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01328nam a2200361 cb4500</leader><controlfield tag="001">BV040592208</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20150330 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">121127s2012 ad|| m||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783941650442</subfield><subfield code="c">Pb. : EUR 15.00 (DE), EUR 15.50 (AT)</subfield><subfield code="9">978-3-941650-44-2</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)820425635</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV040592208</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-12</subfield><subfield code="a">DE-91</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">537.622</subfield><subfield code="2">22//ger</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 280d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 693d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 697d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Hertenberger, Simon</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Growth and properties of In(Ga)As nanowires on silicon</subfield><subfield code="c">Simon Hertenberger</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">1. Aufl.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Garching b. München</subfield><subfield code="b">Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München</subfield><subfield code="c">2012</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">VII, 152 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Selected Topics of Semiconductor Physics and Technology</subfield><subfield code="v">Vol. 144</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="a">Zugl.: München, Techn. Univ., Diss., 2012</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Selected Topics of Semiconductor Physics and Technology</subfield><subfield code="v">Vol. 144</subfield><subfield code="w">(DE-604)BV011499438</subfield><subfield code="9">144</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-025420115</subfield></datafield></record></collection> |
genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
genre_facet | Hochschulschrift |
id | DE-604.BV040592208 |
illustrated | Illustrated |
indexdate | 2024-07-10T00:26:51Z |
institution | BVB |
isbn | 9783941650442 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-025420115 |
oclc_num | 820425635 |
open_access_boolean | |
owner | DE-12 DE-91 DE-BY-TUM |
owner_facet | DE-12 DE-91 DE-BY-TUM |
physical | VII, 152 S. Ill., graph. Darst. |
publishDate | 2012 |
publishDateSearch | 2012 |
publishDateSort | 2012 |
publisher | Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München |
record_format | marc |
series | Selected Topics of Semiconductor Physics and Technology |
series2 | Selected Topics of Semiconductor Physics and Technology |
spelling | Hertenberger, Simon Verfasser aut Growth and properties of In(Ga)As nanowires on silicon Simon Hertenberger 1. Aufl. Garching b. München Verein zur Förderung des Walter-Schottky-Inst. der Techn. Univ. München 2012 VII, 152 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Selected Topics of Semiconductor Physics and Technology Vol. 144 Zugl.: München, Techn. Univ., Diss., 2012 (DE-588)4113937-9 Hochschulschrift gnd-content Selected Topics of Semiconductor Physics and Technology Vol. 144 (DE-604)BV011499438 144 |
spellingShingle | Hertenberger, Simon Growth and properties of In(Ga)As nanowires on silicon Selected Topics of Semiconductor Physics and Technology |
subject_GND | (DE-588)4113937-9 |
title | Growth and properties of In(Ga)As nanowires on silicon |
title_auth | Growth and properties of In(Ga)As nanowires on silicon |
title_exact_search | Growth and properties of In(Ga)As nanowires on silicon |
title_full | Growth and properties of In(Ga)As nanowires on silicon Simon Hertenberger |
title_fullStr | Growth and properties of In(Ga)As nanowires on silicon Simon Hertenberger |
title_full_unstemmed | Growth and properties of In(Ga)As nanowires on silicon Simon Hertenberger |
title_short | Growth and properties of In(Ga)As nanowires on silicon |
title_sort | growth and properties of in ga as nanowires on silicon |
topic_facet | Hochschulschrift |
volume_link | (DE-604)BV011499438 |
work_keys_str_mv | AT hertenbergersimon growthandpropertiesofingaasnanowiresonsilicon |