Determination of the local electric field strength near electric breakdown within devices:
Gespeichert in:
1. Verfasser: | |
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Format: | Abschlussarbeit Buch |
Sprache: | English |
Veröffentlicht: |
Uelvesbüll
<<Der>> Andere Verl.
2011
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Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis |
Beschreibung: | XIII, 94 S. Ill., graph. Darst. |
ISBN: | 9783862471256 |
Internformat
MARC
LEADER | 00000nam a2200000 c 4500 | ||
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001 | BV040576366 | ||
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035 | |a (OCoLC)918471454 | ||
035 | |a (DE-599)DNB1010992392 | ||
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100 | 1 | |a Geinzer, Thomas |d 1980- |e Verfasser |0 (DE-588)1012196178 |4 aut | |
245 | 1 | 0 | |a Determination of the local electric field strength near electric breakdown within devices |c Thomas Geinzer |
264 | 1 | |a Uelvesbüll |b <<Der>> Andere Verl. |c 2011 | |
300 | |a XIII, 94 S. |b Ill., graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
502 | |a Zugl.: Wuppertal, Univ., Diss., 2010 | ||
650 | 0 | 7 | |a Elektrische Feldstärke |0 (DE-588)4322558-5 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Elektrischer Durchbruch |0 (DE-588)4272300-0 |2 gnd |9 rswk-swf |
655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
689 | 0 | 0 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |D s |
689 | 0 | 1 | |a Elektrische Feldstärke |0 (DE-588)4322558-5 |D s |
689 | 0 | 2 | |a Elektrischer Durchbruch |0 (DE-588)4272300-0 |D s |
689 | 0 | |5 DE-604 | |
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999 | |a oai:aleph.bib-bvb.de:BVB01-025404068 |
Datensatz im Suchindex
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adam_text | IMAGE 1
CONTENTS
LIST OF ABBREVIATIONS, SYMBOLS, VARIABLES, AND CONSTANTS X
1 INTRODUCTION 1
2 EVALUATION OF AVAILABLE TESTING TECHNIQUES FOR THE DETERMINATION OF
THE LOCAL ELECTRIC FIELD STRENGTH WITHIN SEMICONDUCTOR DEVICES 4
3 COMPLEMENTARY INVESTIGATIONS OF BEAM INDUCED CURRENT AND PHOTON
EMISSION MICROSCOPY NEAR ELECTRIC BREAKDOWN 7
4 QUANTITATIVE DETERMINATION OF THE LOCAL ELECTRIC FIELD STRENGTH WITHIN
HIGH-DENSITY INTEGRATED CIRCUITS BY FREQUENCY-SELECTIVE ANALYSIS OF
MODULATED CHARGE CARRIER EXCITATION 9
4.1 FUNDAMENTALS OF CHARGE CARRIER TRANSPORT WITHIN INORGANIC
SEMICONDUCTORS FOR BEAM INDUCED CURRENT ANALYSIS 9
4.2 APPLICATION OF BEAM INDUCED CURRENT TECHNIQUE ON HIGH-DENSITY
INTEGRATED CIRCUITS 12
4.2.1 FREQUENCY DEPENDENCE OF THE BEAM INDUCED CURRENT WITHIN THE
MEASURING ARRANGEMENT 13
4.2.2 CONSIDERATION OF DEPLETION REGIONS WITH NANOMETER DIMENSIONS
SMALLER THAN THE EXTENT OF THE INTERACTION VOLUME 16 4.2.3
HIGH-SPATIALLY RESOLVED BEAM INDUCED CURRENT ANALYSIS ON HIGH- DENSITY
INTEGRATED CIRCUITS 19
4.3 FREQUENCY-SELECTIVE DYNAMIC BEAM INDUCED CURRENT ANALYSIS FOR THE
DETERMINATION OF THE LOCAL ELECTRIC FIELD STRENGTH BEFORE ELECTRIC
BREAKDOWN 25
4.3.1 QUALITATIVE DETERMINATION OF THE LOCAL ELECTRIC FIELD STRENGTH 25
4.3.2 QUANTITATIVE DETERMINATION OF THE LOCAL ELECTRIC FIELD STRENGTH
AND FURTHER LOCAL PARAMETERS LIKE JUNCTION VOLTAGE OR IMPURITY
CONCENTRATIONS 30
VII
BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/1010992392
DIGITALISIERT DURCH
IMAGE 2
CONTENTS
4.4 VERIFICATION OF THE STATIC BEAM INDUCED CURRENT METHOD FOR THE
DETERMINATION OF THE LOCAL ELECTRIC FIELD STRENGTH AT AVALANCHE
BREAKDOWN 32
4.5 DISCUSSION OF BEAM INDUCED CURRENT ANALYSIS FOR THE DETERMINATION OF
THE LOCAL ELECTRIC FIELD STRENGTH 36
5 DEVELOPMENT OF ENERGY-DISPERSIVE PHOTON EMISSION MICROSCOPY FOR THE
ACCURATE AND LOW-NOISE DETERMINATION OF THE LOCAL ELECTRIC FIELD
STRENGTH AT ELECTRIC BREAKDOWN 38
5.1 EXAMINATION OF ELECTROLUMINESCENCE MECHANISMS IN INDIRECT
SEMICONDUCTORS 38
5.2 APPLICATION OF PHOTON EMISSION MICROSCOPY ON HIGH-DENSITY INTEGRATED
CIRCUITS 41
5.2.1 ANALYSIS OF BALLISTIC AND CLASSIC CHARGE CARRIER TRANSPORT WITHIN
HIGH- DENSITY INTEGRATED CIRCUITS 41
5.2.2 DESIGN OF A SCANNING NEAR-FIELD PHOTON EMISSION MICROSCOPE....45
5.2.3 IMPROVEMENT OF NEAR-FIELD PROBES FOR THE APPLICATION IN SCANNING
NEAR-FIELD PHOTON EMISSION MICROSCOPES 47
5.2.4 HIGH-SPATIALLY RESOLVED SCANNING NEAR-FIELD PHOTON EMISSION
MICROSCOPY ON HIGH-DENSITY INTEGRATED CIRCUITS 51
5.3 ACCURATE AND LOW-NOISE ENERGY-DISPERSIVE PHOTON EMISSION MICROSCOPY
FOR THE DETERMINATION OF THE LOCAL ELECTRIC FIELD STRENGTH AT ELECTRIC
BREAKDOWN 52
5.3.1 CONSIDERATION OF THE LOW AMOUNT OF VISIBLE PHOTON EMISSION 53
5.3.2 INTRODUCTION OF ACCURATE AND LOW-NOISE ENERGY-DISPERSIVE PHOTON
EMISSION MICROSCOPY 55
5.3.3 COMPARISON OF WAVELENGTH-DISPERSIVE AND ENERGY-DISPERSIVE PHOTON
EMISSION MICROSCOPY 56
5.3.4 QUALITATIVE DETERMINATION OF THE LOCAL ELECTRIC FIELD STRENGTH AT
ELECTRIC BREAKDOWN BY ENERGY-DISPERSIVE PHOTON EMISSION MICROSCOPY 60
5.3.5 VERIFICATION OF ENERGY-DISPERSIVE PHOTON EMISSION MICROSCOPY FOR
THE QUALITATIVE DETERMINATION OF THE LOCAL ELECTRIC FIELD STRENGTH AT
ELECTRIC BREAKDOWN 62
5.4 DISCUSSION OF PHOTON EMISSION MICROSCOPY FOR THE DETERMINATION OF
THE LOCAL ELECTRIC FIELD STRENGTH 64
VIII
IMAGE 3
CONTENTS
6 QUANTITATIVE DETERMINATION OF THE LOCAL ELECTRIC FIELD STRENGTH NEAR
ELECTRIC BREAKDOWN BY COMPLEMENTARY DETECTION TECHNIQUES 66
6.1 REALIZATION OF AN UNIFIED MEASUREMENT SETUP FOR COMPLEMENTARY
DETECTION TECHNIQUES 66
6.1.1 IMPLEMENTATION OF THE COMPLEMENTARY DETECTION TECHNIQUES INTO A
SCANNING NEAR-FIELD OPTICAL MICROSCOPE 66
6.1.2 INFLUENCE OF THE REALIZED SETUP ON THE MEASUREMENT DATA 68
6.2 CORRELATION OF OPTICAL BEAM INDUCED CURRENT AND PHOTON EMISSION
MICROSCOPY MEASUREMENT RESULTS 72
6.3 CALIBRATION OF ENERGY-DISPERSIVE PHOTON EMISSION MICROSCOPY DATA
USING FREQUENCY-SELECTIVE DYNAMIC OPTICAL BEAM INDUCED CURRENT DATA 74
6.4 QUANTITATIVE DETERMINATION OF THE ELECTRIC FIELD STRENGTH BY
COMPLEMENTARY DETECTION TECHNIQUES NEAR ELECTRIC BREAKDOWN 75
7 CONCLUSION AND FUTURE PROSPECTS 78
REFERENCES 81
LIST OF AUTHOR S PUBLICATIONS 92
ACKNOWLEDGMENTS 94
IX
|
any_adam_object | 1 |
author | Geinzer, Thomas 1980- |
author_GND | (DE-588)1012196178 |
author_facet | Geinzer, Thomas 1980- |
author_role | aut |
author_sort | Geinzer, Thomas 1980- |
author_variant | t g tg |
building | Verbundindex |
bvnumber | BV040576366 |
classification_rvk | ZN 4900 |
ctrlnum | (OCoLC)918471454 (DE-599)DNB1010992392 |
dewey-full | 621.38152 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.38152 |
dewey-search | 621.38152 |
dewey-sort | 3621.38152 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Thesis Book |
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genre_facet | Hochschulschrift |
id | DE-604.BV040576366 |
illustrated | Illustrated |
indexdate | 2024-07-10T00:26:27Z |
institution | BVB |
isbn | 9783862471256 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-025404068 |
oclc_num | 918471454 |
open_access_boolean | |
owner | DE-83 |
owner_facet | DE-83 |
physical | XIII, 94 S. Ill., graph. Darst. |
publishDate | 2011 |
publishDateSearch | 2011 |
publishDateSort | 2011 |
publisher | <<Der>> Andere Verl. |
record_format | marc |
spelling | Geinzer, Thomas 1980- Verfasser (DE-588)1012196178 aut Determination of the local electric field strength near electric breakdown within devices Thomas Geinzer Uelvesbüll <<Der>> Andere Verl. 2011 XIII, 94 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Zugl.: Wuppertal, Univ., Diss., 2010 Elektrische Feldstärke (DE-588)4322558-5 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Elektrischer Durchbruch (DE-588)4272300-0 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Halbleiterbauelement (DE-588)4113826-0 s Elektrische Feldstärke (DE-588)4322558-5 s Elektrischer Durchbruch (DE-588)4272300-0 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025404068&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
spellingShingle | Geinzer, Thomas 1980- Determination of the local electric field strength near electric breakdown within devices Elektrische Feldstärke (DE-588)4322558-5 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Elektrischer Durchbruch (DE-588)4272300-0 gnd |
subject_GND | (DE-588)4322558-5 (DE-588)4113826-0 (DE-588)4272300-0 (DE-588)4113937-9 |
title | Determination of the local electric field strength near electric breakdown within devices |
title_auth | Determination of the local electric field strength near electric breakdown within devices |
title_exact_search | Determination of the local electric field strength near electric breakdown within devices |
title_full | Determination of the local electric field strength near electric breakdown within devices Thomas Geinzer |
title_fullStr | Determination of the local electric field strength near electric breakdown within devices Thomas Geinzer |
title_full_unstemmed | Determination of the local electric field strength near electric breakdown within devices Thomas Geinzer |
title_short | Determination of the local electric field strength near electric breakdown within devices |
title_sort | determination of the local electric field strength near electric breakdown within devices |
topic | Elektrische Feldstärke (DE-588)4322558-5 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Elektrischer Durchbruch (DE-588)4272300-0 gnd |
topic_facet | Elektrische Feldstärke Halbleiterbauelement Elektrischer Durchbruch Hochschulschrift |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025404068&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
work_keys_str_mv | AT geinzerthomas determinationofthelocalelectricfieldstrengthnearelectricbreakdownwithindevices |