Effective electron mass in low-dimensional semiconductors:
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2013
|
| Schriftenreihe: | Springer series in materials science
167 |
| Schlagworte: | |
| Online-Zugang: | Inhaltstext Inhaltsverzeichnis |
| Beschreibung: | XXIII, 535 S. graph. Darst. 235 mm x 155 mm |
| ISBN: | 9783642312472 3642312470 |
Internformat
MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV040530873 | ||
| 003 | DE-604 | ||
| 005 | 20130213 | ||
| 007 | t | ||
| 008 | 121109s2013 gw d||| |||| 00||| eng d | ||
| 015 | |a 12,N23 |2 dnb | ||
| 016 | 7 | |a 1022818422 |2 DE-101 | |
| 020 | |a 9783642312472 |c Gb. : ca. EUR 139.05 (DE) (freier Pr.), ca. EUR 143.00 (AT) (freier Pr.), ca. sfr 173.00 (freier Pr.) |9 978-3-642-31247-2 | ||
| 020 | |a 3642312470 |9 3-642-31247-0 | ||
| 028 | 5 | 2 | |a Best.-Nr.: 80124259 |
| 035 | |a (OCoLC)820916589 | ||
| 035 | |a (DE-599)DNB1022818422 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 044 | |a gw |c XA-DE-BE | ||
| 049 | |a DE-11 |a DE-19 | ||
| 082 | 0 | |a 537.6226 |2 22/ger | |
| 084 | |a UP 3200 |0 (DE-625)146379: |2 rvk | ||
| 084 | |a UP 5010 |0 (DE-625)146407: |2 rvk | ||
| 084 | |a UP 5050 |0 (DE-625)146409: |2 rvk | ||
| 084 | |a 530 |2 sdnb | ||
| 100 | 1 | |a Bhattacharya, Sitangshu |e Verfasser |0 (DE-588)136807151 |4 aut | |
| 245 | 1 | 0 | |a Effective electron mass in low-dimensional semiconductors |c Sitangshu Bhattacharya ; Kamakhya Prasad Ghatak |
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 2013 | |
| 300 | |a XXIII, 535 S. |b graph. Darst. |c 235 mm x 155 mm | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Springer series in materials science |v 167 | |
| 650 | 0 | 7 | |a Elektron |0 (DE-588)4125978-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Niederdimensionaler Halbleiter |0 (DE-588)4482656-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Effektive Masse |0 (DE-588)4400801-6 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Effektive Masse |0 (DE-588)4400801-6 |D s |
| 689 | 0 | 1 | |a Elektron |0 (DE-588)4125978-6 |D s |
| 689 | 0 | 2 | |a Niederdimensionaler Halbleiter |0 (DE-588)4482656-4 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Ghatak, Kamakhya Prasad |d 1953- |e Verfasser |0 (DE-588)136807135 |4 aut | |
| 830 | 0 | |a Springer series in materials science |v 167 |w (DE-604)BV000683335 |9 167 | |
| 856 | 4 | 2 | |m X:MVB |q text/html |u http://deposit.dnb.de/cgi-bin/dokserv?id=4047942&prov=M&dok_var=1&dok_ext=htm |3 Inhaltstext |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025376955&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-025376955 | |
Datensatz im Suchindex
| _version_ | 1807954243684925440 |
|---|---|
| adam_text |
IMAGE 1
CONTENTS
PART I INFLUENCE O F QUANTUM CONFINEMENT ON THE EFFECTIVE ELECTRON MASS
(EEM) IN NON-PARABOLIC SEMICONDUCTORS
1 THE E E M IN ULTRATHIN FILMS (UFS) O F NONPARABOLIC SEMICONDUCTORS 3
1.1 INTRODUCTION 3
1.2 THEORETICAL BACKGROUND 7
1.2.1 THE EEM IN UFS O F NONLINEAR OPTICAL SEMICONDUCTORS 7
1.2.2 THE EEM IN UFS OF III-V SEMICONDUCTORS 10
1.2.3 THE EEM IN UFS O F II-VI SEMICONDUCTORS 16
1.2.4 THE EEM IN UFS O F BISMUTH 17
1.2.5 THE EEM IN UFS OF IV-VI SEMICONDUCTORS 24
1.2.6 THE EEM IN UFS OF STRESSED SEMICONDUCTORS 28
1.2.7 THE EEM IN UFS OF TELLURIUM 30
1.2.8 THE EEM IN UFS O F GALLIUM PHOSPHIDE 31
1.2.9 THE EEM IN UFS OF PLATINUM ANTIMONIDE 32
1.2.10 THE EEM IN UFS OF BISMUTH TELLURIDE 34
1.2.11 THE EEM IN UFS OF GERMANIUM 35
1.2.12 THE EEM IN UFS O F GALLIUM ANTIMONIDE 38
1.3 RESULTS AND DISCUSSIONS 39
1.4 OPEN RESEARCH PROBLEMS 56
REFERENCES 66
2 THE EEM IN NIPI STRUCTURES O F NONPARABOLIC SEMICONDUCTORS. . . . 73
2.1 INTRODUCTION 73
2.2 THEORETICAL BACKGROUND 76
2.2.1 FORMULATION O F THE EEM IN NIPI STRUCTURES O F NONLINEAR OPTICAL
MATERIALS 76
2.2.2 EEM IN THE NIPI STRUCTURES O F III-V, TERNARY AND QUATERNARY
SEMICONDUCTORS 77
X V L L
HTTP://D-NB.INFO/1022818422
IMAGE 2
XV111
C O N T E N T S
2.2.3 EEM IN THE NIPI STRUCTURES
OF II-VI SEMICONDUCTORS 79
2.2.4 EEM IN THE NIPI STRUCTURES O F 1V-VI SEMICONDUCTORS 80
2.2.5 EEM IN THE NIPI STRUCTURES O F STRESSED SEMICONDUCTORS 81
2.3 RESULTS AND DISCUSSION 83
2.4 OPEN RESEARCH PROBLEMS 89
REFERENCES 94
3 THE EEM IN INVERSION LAYERS O F NON-PARABOLIC SEMICONDUCTORS 97
3.1 INTRODUCTION 97
3.2 THEORETICAL BACKGROUND 98
3.2.1 FORMULATION OF THE EEM IN N-CHANNEL INVERSION LAYERS O F
NON-LINEAR OPTICAL SEMICONDUCTORS 98
3.2.2 FORMULATION O F THE EEM IN N-CHANNEL INVERSION LAYERS OF III-V,
TERNARY AND QUATERNARY SEMICONDUCTORS 101
3.2.3 FORMULATION OF THE EEM IN N-CHANNEL INVERSION LAYERS O F II-VI
SEMICONDUCTORS 106
3.2.4 FORMULATION O F THE EEM IN N-CHANNEL INVERSION LAYERS OF IV-VI
SEMICONDUCTORS 107
3.2.5 FORMULATION OF THE EEM IN N-CHANNEL INVERSION LAYERS O F STRESSED
SEMICONDUCTORS 110
3.2.6 FORMULATION OF THE EEM IN N-CHANNEL INVERSION LAYERS O F GERMANIUM
113
3.2.7 FORMULATION OF THE EEM IN N-CHANNEL INVERSION LAYERS OF GASB 114
3.3 RESULTS AND DISCUSSION 116
3.4 OPEN RESEARCH PROBLEMS 119
REFERENCES 124
4 THE EEM IN NONPARABOLIC SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION 125
4.1 INTRODUCTION 125
4.2 THEORITICAL BACKGROUND 126
4.2.1 THE EEM IN NON-LINEAR OPTICAL SEMICONDUCTORS UNDER MAGNETIC
QUANTIZATION 126
4.2.2 THE EEM IN KANE TYPE III-V SEMICONDUCTORS UNDER MAGNETIC
QUANTIZATION 128
4.2.3 THE EEM IN II-VI SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION 135
IMAGE 3
C O N T E N T S X I X
4.2.4 THE EEM IN BISMUTH UNDER MAGNETIC
QUANTIZATION 136
4.2.5 THE EEM IN IV-VI SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION 143
4.2.6 THE EEM IN STRESSED SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION 146
4.2.7 THE EEM IN TELLURIUM UNDER MAGNETIC QUANTIZATION 147
4.2.8 THE EEM IN N-GALLIUM PHOSPHIDE UNDER MAGNETIC QUANTIZATION 148
4.2.9 THE EEM IN PLATINUM ANTIMONIDE UNDER MAGNETIC QUANTIZATION 149
4.2.10 THE EEM IN BISMUTH TELLURIDE UNDER MAGNETIC QUANTIZATION 151
4.2.11 THE EEM IN GERMANIUM UNDER MAGNETIC QUANTIZATION 152
4.2.12 THE EEM IN GALLIUM ANTIMONIDE UNDER MAGNETIC QUANTIZATION 153
4.2.13 THE EEM IN II-V SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION 154
4.3 RESULTS AND DISCUSSION 156
4.4 OPEN RESEARCH PROBLEMS 171
REFERENCES 172
5 THE EEM IN NANOWIRES OF NON-PARABOLIC SEMICONDUCTORS 175
5.1 INTRODUCTION 175
5.2 THEORETICAL BACKGROUND 176
5.2.1 THE EEM IN NANOWIRES O F NONLINEAR OPTICAL SEMICONDUCTORS 176
5.2.2 THE EEM IN NANOWIRES OF III-V SEMICONDUCTORS . . . . 178
5.2.3 THE EEM IN NANOWIRES O F 11-VI SEMICONDUCTORS . . . . 183
5.2.4 THE EEM IN NANOWIRES O F BISMUTH 184
5.2.5 THE EEM IN NANOWIRES OF IV-VI SEMICONDUCTORS. . . . 188
5.2.6 THE EEM IN NANOWIRES OF STRESSED SEMICONDUCTORS . . . 190 5.2.7
THE EEM IN NANOWIRES OF TELLURIUM 191
5.2.8 THE EEM IN NANOWIRES O F GALLIUM PHOSPHIDE 193
5.2.9 THE EEM IN NANOWIRES O F PLATINUM ANTIMONIDE 194
5.2.10 THE EEM IN NANOWIRES OF BISMUTH TELLURIDE 196
5.2.11 THE EEM IN NANOWIRES OF GERMANIUM 197
5.2.12 THE EEM IN NANOWIRES OF GALLIUM ANTIMONIDE 199
5.2.13 THE EEM IN NANOWIRES O F I L - V MATERIALS 200
5.2.14 CARBON NANOTUBES 202
5.3 RESULTS AND DISCUSSION 205
5.4 OPEN RESEARCH PROBLEMS 221
REFERENCES 222
IMAGE 4
X X
C O N T E N T S
PART II INFLUENCE O F LIGHT WAVES ON THE EEM
IN OPTOELECTRONIC SEMICONDUCTORS
6 THE E E M IN QUANTUM CONFINED OPTOELECTRONIC SEMICONDUCTORS IN THE
PRESENCE O F LIGHT WAVES 227
6.1 INTRODUCTION 227
6.2 THEORETICAL BACKGROUND 228
6.2.1 THE FORMULATION O F THE ELECTRON DISPERSION RELATION IN THE
PRESENCE O F LIGHT WAVES IN III-V, TERNARY AND QUATERNARY SEMICONDUCTORS
228
6.2.2 THE FORMULATION OF THE EEM IN THE PRESENCE OF LIGHT WAVES IN
III-V, TERNARY, AND QUATERNARY SEMICONDUCTORS 239
6.3 RESULTS AND DISCUSSION 241
6.4 THE FORMULATION O F THE EEM IN THE PRESENCE O F QUANTIZING MAGNETIC
FIELD UNDER EXTERNAL PHOTO EXCITATION IN III-V, TERNARY, AND QUATERNARY
MATERIALS 253
6.4.1 INTRODUCTION 253
6.4.2 THEORETICAL BACKGROUND 254
6.5 RESULTS AND DISCUSSION 256
6.6 THE FORMULATION OF THE EEM FOR THE ULTRATHIN FILMS O F III-IV,
TERNARY AND QUATERNARY SEMICONDUCTORS UNDER EXTERNAL PHOTO-EXCITATION
257
6.6.1 INTRODUCTION 257
6.6.2 THEORETICAL BACKGROUND 258
6.7 RESULTS AND DISCUSSION 262
6.8 INVESTIGATION O F THE EEM IN N-CHANNEL INVERSION LAYERS O F III-V,
TERNARY AND QUATERNARY SEMICONDUCTORS UNDER EXTERNAL PHOTO-EXCITATION
264
6.8.1 INTRODUCTION 264
6.8.2 THEORETICAL BACKGROUND 265
6.9 RESULTS AND DISCUSSION 271
6.10 INVESTIGATION O F THE EEM IN NIPI STRUCTURES OF III-V, TERNARY AND
QUATERNARY SEMICONDUCTORS UNDER EXTERNAL PHOTO-EXCITATION 273
6.10.1 INTRODUCTION 273
6.10.2 THEORETICAL BACKGROUND 274
6.11 RESULTS AND DISCUSSION 277
6.12 INVESTIGATION OF THE EEM IN NANO WIRES OF III-V, TERNARY, AND
QUATERNARY SEMICONDUCTORS UNDER EXTERNAL PHOTO-EXCITATION 278
6.12.1 INTRODUCTION 278
6.12.2 THEORETICAL BACKGROUND 278
6.13 RESULTS AND DISCUSSION 281
IMAGE 5
C O N T E N T S X X I
6.14 THE EEM IN EFFECTIVE MASS SUPERLATTICES
OF OPTOELECTRONIC SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION UNDER
EXTERNAL PHOTO-EXCITATION 282
6.14.1 INTRODUCTION 282
6.14.2 THEORETICAL BACKGROUND 283
6.15 RESULTS AND DISCUSSION 289
6.16 THE EEM IN NANOWIRE EFFECTIVE MASS SUPERLATTICES OF OPTOELECTRONIC
SEMICONDUCTORS IN THE PRESENCE OF EXTERNAL PHOTO-EXCITATION 290
6.16.1 INTRODUCTION 290
6.16.2 THEORETICAL BACKGROUND 291
6.17 RESULTS AND DISCUSSION 294
6.18 THE EEM IN SUPERLATTICES OF OPTOELECTRONIC SEMICONDUCTORS WITH
GRADED INTERFACES UNDER MAGNETIC QUANTIZATION IN THE PRESENCE OF
EXTERNAL PHOTO-EXCITATION 294
6.18.1 INTRODUCTION 294
6.18.2 THEORETICAL BACKGROUND 295
6.19 RESULTS AND DISCUSSION 300
6.20 THE EEM IN QUANTUM WIRE SUPERLATTICES OF OPTOELECTRONIC
SEMICONDUCTORS WITH GRADED INTERFACES IN THE PRESENCE O F EXTERNAL
PHOTO-EXCITATION 300
6.20.1 INTRODUCTION 300
6.20.2 THEORETICAL BACKGROUND 301
6.21 RESULTS AND DISCUSSION 305
6.22 OPEN RESEARCH PROBLEMS 305
REFERENCES 314
PART III INFLUENCE O F INTENSE ELECTRIC FIELD ON THE E E M IN
OPTOELECTRONIC SEMICONDUCTORS
7 THE EEM IN THE PRESENCE O F INTENSE ELECTRIC FIELD 319
7.1 INTRODUCTION 319
7.2 THEORETICAL BACKGROUND 320
7.2.1 THE EEM IN BULK OPTOELECTRONIC SEMICONDUCTORS UNDER STRONG
ELECTRIC FIELD 320
7.2.2 THE MAGNETO EEM IN OPTOELECTRONIC SEMICONDUCTORS UNDER STRONG
ELECTRIC FIELD 323
7.2.3 THE EEM IN UFS OF OPTOELECTRONIC SEMICONDUCTORS UNDER STRONG
ELECTRIC FIELD 327
7.2.4 THE EEM IN NIPI STRUCTURES O F OPTOELECTRONIC SEMICONDUCTORS UNDER
STRONG ELECTRIC FIELD 329
7.2.5 THE EEM IN N-CHANNEL INVERSION LAYERS OF OPTOELECTRONIC
SEMICONDUCTORS 331
IMAGE 6
X X I I C O N T E N T S
7.2.6 THE EEM IN NANO WIRES
OF OPTOELECTRONIC SEMICONDUCTORS 335
7.2.7 THE EEM IN EFFECTIVE MASS SUPERLATTICES OF OPTOELECTRONIC
SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION 338
7.2.8 THE EEM IN NANO WIRE EFFECTIVE MASS SUPERLATTICES OF
OPTOELECTRONIC SEMICONDUCTORS 341
7.2.9 THE EEM IN SUPERLATTICES OF OPTOELECTRONIC SEMICONDUCTORS WITH
GRADED INTERFACES UNDER MAGNETIC QUANTIZATION 344
7.2.10 THE EEM IN QUANTUM WIRE SUPERLATTICES O F OPTOELECTRONIC
SEMICONDUCTORS WITH GRADED INTERFACES 351
7.3 RESULTS AND DISCUSSION 355
7.4 OPEN RESEARCH PROBLEMS 356
REFERENCES 363
8 APPLICATIONS AND BRIEF REVIEW O F EXPERIMENTAL RESULTS 365
8.1 INTRODUCTION 365
8.2 APPLICATIONS 365
8.2.1 THERMOELECTRIC POWER: 365
8.2.2 DEBYE SCREENING LENGTH: 381
8.2.3 CARRIER CONTRIBUTION TO THE ELASTIC CONSTANTS: 384
8.2.4 DIFFUSIVITY-MOBILITY RATIO: 389
8.2.5 MEASUREMENT OF BAND GAP IN THE PRESENCE O F LIGHT WAVES: 393
8.2.6 DIFFUSION COEFFICIENT O F THE MINORITY CARRIERS: 396
8.2.7 NONLINEAR OPTICAL RESPONSE: 397
8.2.8 THIRD-ORDER NONLINEAR OPTICAL SUSCEPTIBILITY: 398
8.2.9 GENERALIZED RAMAN GAIN: 398
8.2.10 EINSTEIN'S PHOTO-ELECTRIC EFFECT 398
8.3 BRIEF REVIEW O F SIMULATION AND EXPERIMENTAL RESULTS 402
8.4 OPEN RESEARCH PROBLEM 421
REFERENCES 421
9 CONCLUSION AND FUTURE RESEARCH 427
REFERENCES 431
APPENDIX A: THE E E M IN COMPOUND SEMICONDUCTORS AND THEIR
NANO-STRUCTURES UNDER CROSS-FIELDS CONFIGURATION 433
APPENDIX B: THE EEM IN HEAVILY DOPED COMPOUND SEMICONDUCTORS 4 6 3
IMAGE 7
C O N T E N T S X X I I I
APPENDIX C: THE EEM IN SUPERLATTICES O F HEAVILY DOPED
NON-PARABOLIC SEMICONDUCTORS 491
INDEX 527
ABOUT THE AUTHORS 535 |
| any_adam_object | 1 |
| author | Bhattacharya, Sitangshu Ghatak, Kamakhya Prasad 1953- |
| author_GND | (DE-588)136807151 (DE-588)136807135 |
| author_facet | Bhattacharya, Sitangshu Ghatak, Kamakhya Prasad 1953- |
| author_role | aut aut |
| author_sort | Bhattacharya, Sitangshu |
| author_variant | s b sb k p g kp kpg |
| building | Verbundindex |
| bvnumber | BV040530873 |
| classification_rvk | UP 3200 UP 5010 UP 5050 |
| ctrlnum | (OCoLC)820916589 (DE-599)DNB1022818422 |
| dewey-full | 537.6226 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.6226 |
| dewey-search | 537.6226 |
| dewey-sort | 3537.6226 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>00000nam a2200000 cb4500</leader><controlfield tag="001">BV040530873</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20130213</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">121109s2013 gw d||| |||| 00||| eng d</controlfield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">12,N23</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">1022818422</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783642312472</subfield><subfield code="c">Gb. : ca. EUR 139.05 (DE) (freier Pr.), ca. EUR 143.00 (AT) (freier Pr.), ca. sfr 173.00 (freier Pr.)</subfield><subfield code="9">978-3-642-31247-2</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3642312470</subfield><subfield code="9">3-642-31247-0</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">Best.-Nr.: 80124259</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)820916589</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DNB1022818422</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">XA-DE-BE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-11</subfield><subfield code="a">DE-19</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">537.6226</subfield><subfield code="2">22/ger</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3200</subfield><subfield code="0">(DE-625)146379:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 5010</subfield><subfield code="0">(DE-625)146407:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 5050</subfield><subfield code="0">(DE-625)146409:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">530</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Bhattacharya, Sitangshu</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)136807151</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effective electron mass in low-dimensional semiconductors</subfield><subfield code="c">Sitangshu Bhattacharya ; Kamakhya Prasad Ghatak</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin [u.a.]</subfield><subfield code="b">Springer</subfield><subfield code="c">2013</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XXIII, 535 S.</subfield><subfield code="b">graph. Darst.</subfield><subfield code="c">235 mm x 155 mm</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Springer series in materials science</subfield><subfield code="v">167</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Elektron</subfield><subfield code="0">(DE-588)4125978-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Niederdimensionaler Halbleiter</subfield><subfield code="0">(DE-588)4482656-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Effektive Masse</subfield><subfield code="0">(DE-588)4400801-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Effektive Masse</subfield><subfield code="0">(DE-588)4400801-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Elektron</subfield><subfield code="0">(DE-588)4125978-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Niederdimensionaler Halbleiter</subfield><subfield code="0">(DE-588)4482656-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ghatak, Kamakhya Prasad</subfield><subfield code="d">1953-</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)136807135</subfield><subfield code="4">aut</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Springer series in materials science</subfield><subfield code="v">167</subfield><subfield code="w">(DE-604)BV000683335</subfield><subfield code="9">167</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">X:MVB</subfield><subfield code="q">text/html</subfield><subfield code="u">http://deposit.dnb.de/cgi-bin/dokserv?id=4047942&prov=M&dok_var=1&dok_ext=htm</subfield><subfield code="3">Inhaltstext</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025376955&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-025376955</subfield></datafield></record></collection> |
| id | DE-604.BV040530873 |
| illustrated | Illustrated |
| indexdate | 2024-08-21T00:18:45Z |
| institution | BVB |
| isbn | 9783642312472 3642312470 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-025376955 |
| oclc_num | 820916589 |
| open_access_boolean | |
| owner | DE-11 DE-19 DE-BY-UBM |
| owner_facet | DE-11 DE-19 DE-BY-UBM |
| physical | XXIII, 535 S. graph. Darst. 235 mm x 155 mm |
| publishDate | 2013 |
| publishDateSearch | 2013 |
| publishDateSort | 2013 |
| publisher | Springer |
| record_format | marc |
| series | Springer series in materials science |
| series2 | Springer series in materials science |
| spelling | Bhattacharya, Sitangshu Verfasser (DE-588)136807151 aut Effective electron mass in low-dimensional semiconductors Sitangshu Bhattacharya ; Kamakhya Prasad Ghatak Berlin [u.a.] Springer 2013 XXIII, 535 S. graph. Darst. 235 mm x 155 mm txt rdacontent n rdamedia nc rdacarrier Springer series in materials science 167 Elektron (DE-588)4125978-6 gnd rswk-swf Niederdimensionaler Halbleiter (DE-588)4482656-4 gnd rswk-swf Effektive Masse (DE-588)4400801-6 gnd rswk-swf Effektive Masse (DE-588)4400801-6 s Elektron (DE-588)4125978-6 s Niederdimensionaler Halbleiter (DE-588)4482656-4 s DE-604 Ghatak, Kamakhya Prasad 1953- Verfasser (DE-588)136807135 aut Springer series in materials science 167 (DE-604)BV000683335 167 X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=4047942&prov=M&dok_var=1&dok_ext=htm Inhaltstext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025376955&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Bhattacharya, Sitangshu Ghatak, Kamakhya Prasad 1953- Effective electron mass in low-dimensional semiconductors Springer series in materials science Elektron (DE-588)4125978-6 gnd Niederdimensionaler Halbleiter (DE-588)4482656-4 gnd Effektive Masse (DE-588)4400801-6 gnd |
| subject_GND | (DE-588)4125978-6 (DE-588)4482656-4 (DE-588)4400801-6 |
| title | Effective electron mass in low-dimensional semiconductors |
| title_auth | Effective electron mass in low-dimensional semiconductors |
| title_exact_search | Effective electron mass in low-dimensional semiconductors |
| title_full | Effective electron mass in low-dimensional semiconductors Sitangshu Bhattacharya ; Kamakhya Prasad Ghatak |
| title_fullStr | Effective electron mass in low-dimensional semiconductors Sitangshu Bhattacharya ; Kamakhya Prasad Ghatak |
| title_full_unstemmed | Effective electron mass in low-dimensional semiconductors Sitangshu Bhattacharya ; Kamakhya Prasad Ghatak |
| title_short | Effective electron mass in low-dimensional semiconductors |
| title_sort | effective electron mass in low dimensional semiconductors |
| topic | Elektron (DE-588)4125978-6 gnd Niederdimensionaler Halbleiter (DE-588)4482656-4 gnd Effektive Masse (DE-588)4400801-6 gnd |
| topic_facet | Elektron Niederdimensionaler Halbleiter Effektive Masse |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=4047942&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025376955&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV000683335 |
| work_keys_str_mv | AT bhattacharyasitangshu effectiveelectronmassinlowdimensionalsemiconductors AT ghatakkamakhyaprasad effectiveelectronmassinlowdimensionalsemiconductors |