Multifunctional oxide heterostructures:
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Oxford
Oxford Univ. Press
2012
|
| Ausgabe: | 1. ed. |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis Klappentext |
| Beschreibung: | XVI, 396 S., [8] Bl. farb. Ill., graph. Darst. |
| ISBN: | 9780199584123 |
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| 245 | 1 | 0 | |a Multifunctional oxide heterostructures |c ed. by Evgeny Y. Tsymbal ... |
| 250 | |a 1. ed. | ||
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Datensatz im Suchindex
| _version_ | 1804149601380335616 |
|---|---|
| adam_text | Contents
List of contributors
xv
PART I FUNDAMENTALS
1
A brief introduction to strongly correlated electronic materials
3
E. DAGOTTO and Y. TOKURA
1.1
Motivation
3
1.2
Introduction
3
1.3
Why correlated electrons?
5
1.4
Control of correlated electrons in complex oxides
6
1.5
Ordering of charge, spin, and orbital degrees of freedom
11
1.6
Model Hamiltonians
14
1.7
Intrinsically inhomogeneous states
15
1.8
Giant responses in correlated electron systems
18
1.9
Importance of quenched disorder and strain
24
1.10
Outlook for correlated-electron technology: spintronics, double
perovskites, multiferroics, orbitronics, resistance switching
28
1.11
Conclusions
32
Acknowledgments
32
References
32
2
Magnetoelectric coupling and multiferroic materials
38
Gustau
CATALAN and James F. SCOTT
2.1
Introduction: magnetoelectric coupling and multiferroic materials
38
2.2
Magnetoelectric coupling
40
2.2.1
Linear coupling: Dzyaloshinskii-Moriya effect, electrically induced
spin canting, and Shtrikman limit
41
2.2.2
Biquadratic (strain mediated) coupling
42
2.2.3
Perovskite oxides: why are they seldom multiferroic?
43
2.3
Magnetoelectric multiferroics
44
2.3.1
Perovskites with ferroelectricity caused by lone-pair polarization:
BiFeO3
44
2.3.2
Oxides with ferroelectricity caused by spins spirals:
ТЬМпОз,
TbMn2O5
46
2.3.3
Hexagonal multiferroics:
УМпОз
46
2.3.4
Unconfirmed oxide multiferroics.· RN1O3 (R
=
rare earth or Bi)
47
2.3.5
Magnetoelectric relaxors
48
2.3.6
Ferromagnetic ferroelectric fluorides
51
2.3.7
Ferrimagnetic ferroelectrics
55
χ
Contents
Appendix 2.1 Magnetoelectric
measurements
57
Appendix 2.2
Critical exponents
in
isostructural phase transitions
59
References
61
PART II
OXIDE
FILMS AND INTERFACES:
GROWTH
AND CHARACTERIZATION
3
Synthesis of epitaxial multiferroic oxide thin films
73
Thomas TYBELL and Chang-Beom
ЕОМ
3.1
Introduction
73
3.2
Substrates
75
3.2.1
Strain, orientation, and symmetry control by choice of substrate
75
3.2.2
Substrate termination and surface quality
77
3.3
Strain engineering as a tool for controlling functional oxide thin films
79
3.3.1
SrRuO3
—
a case study of strain engineering
80
3.3.2
Effect of defects
86
3.4
Vicinal control of functional properties
86
3.4.1
SrRuO3
—
a case study of vicinal control of orthorhombic domain
structure
87
3.4.2
ВіЕеОз—
domain control of a prototype rhombohedral material by
substrate miscut
88
3.4.3
Mono-domain samples
—
enabling fundamental studies and
enhanced properties of BiFeO3
91
3.5
Conclusions
95
Acknowledgments
96
References
96
4
Synchrotron X-ray scattering studies of oxide heterostructures
99
Dillon D. FONG
4.1
Introduction
99
4.2
Surface X-ray diffraction
100
4.3
Resonant scattering
105
4.4 Anisotropie
effects
115
4.5
Summary
118
Acknowledgments
118
References
118
5
Scanning transmission electron microscopy of oxides
123
M.
VARELA,
С.
LEON,
J.
SANTAMARÍA,
and S. J.
PENNYCOOK
5.1
Introduction to STEM
123
5.2
STEM imaging
128
5.2.1
Probe formation
129
5.2.2
Time reversal symmetry in electron microscopy
130
5.2.3
Image simulation
131
5.3
Mapping materials properties through EELS fine structure
135
5.4
Applications: interfaces in manganite/cuprate heterostructures
138
Contents xi
5.5
Summary
150
Acknowledgments
150
References
151
6
Advanced modes of piezoresponse force microscopy for ferroelectric
nanostructures I57
A. GRUVERMAN
6.1
Introduction
157
6.2
Ferroelectric structures and size effects
158
6.3
Advanced modes of PFM
162
6.3.1
Resonance-enhanced PFM: static domain imaging
162
6.3.2
Stroboscopie
PFM: domain switching dynamics
165
6.3.3
PFM Spectroscopy: spatial variability of switching
parameters
170
6.4
Summary
174
Acknowledgments
175
References
175
PART III OXIDE FILMS AND INTERFACES: FUNCTIONAL PROPERTIES
7
General considerations of the electrostatic boundary conditions in
oxide heterostructures
183
Takuya HIGUCHI and Harold Y. HWANG
7.1
Introduction
183
7.2
The polar discontinuity picture
185
7.2.1
Stability of ionic crystal surfaces
185
7.2.2
Stability of covalent surfaces
187
7.2.3
Polar semiconductor interfaces
188
7.3
Metallic conductivity between two insulators
192
7.3.1
The polar discontinuity scenario
193
7.3.2
Oxygen vacancy formation during growth
194
7.3.3
Intermixing and local bonding at the interface
194
7.3.4
Reconciling the various mechanisms
196
7.4
The local charge neutrality picture
196
7.4.1
Unit-cells in ionic crystals
196
7.4.2
ЬаАЮз/ЗгТіОз
in the local charge neutrality picture
198
7.4.3
Coupling of polar discontinuities
199
7.4.4
Modulation doping by a proximate polar discontinuity
201
7.4.5
Advantages of the local charge neutrality picture
202
7.5
Equivalence of the two pictures
203
7.5.1
Gauss law for infinite crystals
203
7.5.2
Gauss law for finite crystals
204
7.6
Further discussions
205
7.6.1
Effect of interdiffusion
205
7.6.2
Role of correlation effects
207
7.6.3
Quadrupolar discontinuity
207
xii Contents
7.7
Summary
209
Acknowledgments
210
References
210
8
Strongly correlated heterostructures
214
Satoshi OKAMOTO
8.1
Introduction
214
8.2
Theoretical description
218
8.2.1
Model
218
8.2.2
Layer-extension of dynamical-mean-field theory
222
8.2.3
Auxiliary particle methods
225
8.3
Mott-insulator/band-insulator heterostructures
226
8.3.1
Lattice relaxation and charge redistribution
226
8.3.2
Mott
physics
229
8.4
Superlattices of under-doped-cuprate/over-doped-cuprate
232
8.5
Other directions
236
8.5.1
Surface magnetism of double-exchange manganites
237
8.5.2
Transport through two-terminal strongly correlated
heterostructures
240
8.6
Summary
243
Acknowledgments
245
References
245
9
Manganite
multilayers
254
Anand BHATTACHARYA, Shuai DONG, and Rong YU
9.1
Motivation
254
9.2
Introduction to manganites
255
9.3
Theoretical description of
manganite
multilayers
256
9.4
Synthesis and structure of
manganite
multilayers
259
9.5
Recent progress on
manganite
multilayers
262
9.5.1
Phase transitions and orbital order driven by strain
262
9.5.2
Charge transfer and spin-polarized two-dimensional
electron gas
265
9.5.3
А
-site
ordering in short-period superlattices
267
9.5.4
Tuning between ferromagnetism and antiferromagnetism
273
9.5.5
Interfacial
magnetism
276
9.5.6
Metal-insulator transitions
278
9.5.7
Half-manganite heterostructures: band lineup and
magnetic interactions at interfaces
285
9.6
Conclusions and outlook
290
Acknowledgments
291
References
291
10
Thermoelectric oxides: films and heterostructures
296
Hiromichi OHTA and Kunihito KOUMOTO
10.1
Introduction
296
Contents xiii
10.2 p-type
layered cobalt oxide:
СазСо4О9
films
297
10.3
Heavily electron doped SrTiO3 films
300
10.4
Two-dimensional electron gas
306
10.5
Field effect thermopower modulation
309
10.6
Summary
312
References
312
PART IV APPLICATIONS
11
High-*: gate dielectrics for advanced CMOS
3
1
9
Suman
DATTA and Darrell G. SCHLOM
11.1
Introduction 319
11.2
High-*: dielectric materials
322
11.3
Metal-gate electrodes
323
11.3.1
Poly-depletion elimination
323
11.3.2
Interfacial
layer control
323
11.3.3
High
-л:
phonon screening
324
11.3.4
Metal gates with correct work function
325
11.4
High-K/metal-gate silicon FETs
326
11.4.1
Integration
326
11.4.2
Devices
329
11.4.3
Reliability
329
11.5
High-K/metal-gate nonsilicon FETs
330
11.5.1
Integration
330
11.5.2
Devices and characterization 331
Acknowledgments
334
References
335
12
FeFET and ferroelectric random access memories
340
Hiroshi ISHIWARA
12.1
Overview of ferroelectric random access memories (FeRAMs)
340
12.2
Ferroelectric films used for FeRAMs
342
12.2.1
Properties necessary for FeRAMs
342
12.2.2
Pb(Zr,Ti)O3 and Bi-layer structured ferroelectrics
344
12.2.3
Novel ferroelectric films with large
remanent
polarization
346
12.3
Cell structure and operation principle of capacitor-type
FeRAMs
349
12.3.1
Cell structure of lTlC(2T2C)-type FeRAMs
349
12.3.2
Operation principle of lTlC(2T2C)-type FeRAMs
352
12.3.3
Other capacitor-type FeRAMs
354
12.4
Cell structure and operation principle of FET-type FeRAMs
357
12.4.1
Optimization of FeFET structure
357
12.4.2
Data retention characteristics of FeFETs
358
12.4.3
Cell array structures
З6О
References
362
xiv Contents
13
ЬаАЮз/БгТЮз
-based device concepts
364
Daniela F.
BOGORIN, Patrick IRVIN, Cheng
CEN,
and Jeremy LEVY
13.1
Introduction
364
13.1.1
Semiconductor 2DEGs
365
13.1.2
2DEG at
ЬаАІОз/БгТіОз
interface
365
13.1.3
Polar catastrophe model
365
13.1.4
Metal-insulator transition in LaAK^/SrTiOs
366
13.1.5
Inconsistencies with the polar catastrophe model
367
13.2
Field-effect devices
368
13.2.1
SrTiO3-based channels
368
13.2.2
Electrical gating of LaAKVSrTK^ structures
368
13.2.3
ЕаАЮз/БгТЮз
-based field-effect devices
370
13.3
Reconfigurable nanoscale
devices
370
13.3.1
Nanoscale writing and erasing
371
13.3.2
Water cycle
372
13.3.3
ЕаАЈОз/ЅгТлОз
as a floating-gate transistor network
373
13.3.4
Quasi-OD structures
375
13.3.5
Designer potential barriers
375
13.3.6
SketchFET
376
13.3.7
Nanoscale photodetectors
378
13.3.8
Integration of LaAK^/SrTiOs with silicon
379
13.4
Future prospects
381
13.4.1
Room-temperature devices
382
13.4.2
Information processing
382
13.4.3
Spintronics
382
13.4.4
Quantum Hall regime
383
13.4.5
Superconducting devices
383
13.4.6
Solid-state Hubbard simulators
383
References
384
Index
389
This book is devoted to the rapidly developing field of oxide thin-films and
heterostructures. Oxide materials combined with atomic-scale precision in a heterostructure
exhibit an abundance of macroscopic physical properties involving the strong coupling
between the electronic, spin, and structural degrees of freedom, and the interplay between
magnetism, ferroelectricity, and conductivity. Recent advances in thin-film deposition and
characterization techniques made possible the experimental realization of such oxide
heterostructures, promising novel functionalities and device concepts.
The book consists of chapters on some of the key innovations in the field over recent
years, including strongly correlated oxide heterostructures, magnetoelectric coupling and
multiferroic materials, thermoelectric phenomena, and two-dimensional electron gases at
oxide interfaces. The book covers the core principles, describes experimental approaches to
fabricate and characterize oxide heterostructures, demonstrates new functional
properties of these materials, and provides an overview of novel applications.
EVGENY
Y.
TSYMBAL
is Charles Bessey Professor of Physics at the
University of Nebraska-Lincoln.
ELBIO R. A. DAGOTTO is Distinguished Professor of Physics at the University of Tennessee,
Knoxville, and Distinguished Scientist at Oak Ridge National Laboratory, Oak Ridge.
CHANG-BEOM
ЕОМ
is Harvey D.
Spangler
Distinguished Professor of Materials Science and
Engineering and Physics at the University of Wisconsin-Madison.
RAMAMOORTHY RAMESH is Plato Malozemoff Professor of Materials Science
and Physics at the University of California, Berkeley.
|
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| id | DE-604.BV040520074 |
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| indexdate | 2024-07-10T00:25:37Z |
| institution | BVB |
| isbn | 9780199584123 |
| language | English |
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| publisher | Oxford Univ. Press |
| record_format | marc |
| spelling | Multifunctional oxide heterostructures ed. by Evgeny Y. Tsymbal ... 1. ed. Oxford Oxford Univ. Press 2012 XVI, 396 S., [8] Bl. farb. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Dünne Schicht (DE-588)4136925-7 gnd rswk-swf Heterostruktur (DE-588)4123378-5 gnd rswk-swf Oxidschicht (DE-588)4044242-1 gnd rswk-swf Heterostruktur (DE-588)4123378-5 s Oxidschicht (DE-588)4044242-1 s Dünne Schicht (DE-588)4136925-7 s DE-604 Tsymbal, Evgeny Y. edt Digitalisierung UB Bayreuth application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025366388&sequence=000003&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis Digitalisierung UB Bayreuth application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025366388&sequence=000004&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA Klappentext |
| spellingShingle | Multifunctional oxide heterostructures Dünne Schicht (DE-588)4136925-7 gnd Heterostruktur (DE-588)4123378-5 gnd Oxidschicht (DE-588)4044242-1 gnd |
| subject_GND | (DE-588)4136925-7 (DE-588)4123378-5 (DE-588)4044242-1 |
| title | Multifunctional oxide heterostructures |
| title_auth | Multifunctional oxide heterostructures |
| title_exact_search | Multifunctional oxide heterostructures |
| title_full | Multifunctional oxide heterostructures ed. by Evgeny Y. Tsymbal ... |
| title_fullStr | Multifunctional oxide heterostructures ed. by Evgeny Y. Tsymbal ... |
| title_full_unstemmed | Multifunctional oxide heterostructures ed. by Evgeny Y. Tsymbal ... |
| title_short | Multifunctional oxide heterostructures |
| title_sort | multifunctional oxide heterostructures |
| topic | Dünne Schicht (DE-588)4136925-7 gnd Heterostruktur (DE-588)4123378-5 gnd Oxidschicht (DE-588)4044242-1 gnd |
| topic_facet | Dünne Schicht Heterostruktur Oxidschicht |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025366388&sequence=000003&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025366388&sequence=000004&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT tsymbalevgenyy multifunctionaloxideheterostructures |