AlGaN-GaN HEMTs reliability: degradation modes and analysis
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
2012
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| Schlagworte: | |
| Online-Zugang: | Volltext Inhaltsverzeichnis |
| Beschreibung: | XII, 110 S. Ill., graph. Darst. |
Internformat
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Datensatz im Suchindex
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| adam_text | IMAGE 1
CONTENTS
ACKNOWLEDGMENTS III
ABSTRACT V
ZUSAMMENFASSUNG VII
AUTHOR S DECLARATION IX
1 INTRODUCTION 1
1.1 A SHORT STORY OF GAN 1
1.2 GAN STRUCTURE . 2
1.3 SUBSTRATE OPTIONS 2
1.4 ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS (HEMTS) . . . 5 1.5 THE
STATUS OF GAN RELIABILITY 8
1.5.1 HECKINANN DIAGRAM: CRYSTAL PROPERTIES RELATIONS . . . . 11 1.6
STRUCTURES OF THIS THESIS 12
2 A L G A N / G A N H E M T DEVICE FABRICATION 13
2.1 MOTIVATION 13
2.2 EPITAXY 13
2.3 PROCESS TECHNOLOGY 16
2.4 DEFECTS 18
3 DEVICE STRESSING AND CHARACTERIZATIONS 25
3.1 ROBUSTNESS TESTS 26
3.2 LONG TERM LIFETIME TESTS 26
3.3 ELECTRICAL CHARACTERIZATIONS 28
3.4 OPTICAL CHARACTERIZATIONS 32
3.5 LOCALIZED STRUCTURAL ANALYSIS 35
4 DESIGN O F EXPERIMENTS 39
4.1 MOTIVATION 39
X I
HTTP://D-NB.INFO/1028209002
IMAGE 2
5 RESULTS 4 3
5.1 GAN HEMTS CRITICAL VOLTAGE DETERMINATION BY DC-STEP-STRESS TESTS 44
5.1.1 STRAIN IN ALGAN LAYER 48
5.1.2 GATE TECHNOLOGY AND SUBSTRATE TYPE 50
5.1.3 SUMMARY 50
5.2 INFLUENCE OF GAN CAP ON ROBUSTNESS OF ALGAN/GAN HEMTS . 51 5.2.1
ELECTROLUMINESCENCE 54
5.2.2 ELECTRIC FIELD SIMULATION 57
5.2.3 SUMMARY 58
5.3 COMPARATIVE STUDY OF ALGAN/GAN HEMTS ROBUSTNESS VERSUS BUFFER DESIGN
VARIATIONS 60
5.3.1 CHARACTERIZATION BY ELECTROLUMINESCENCE 63
5.3.2 SIMULATIONS OF BAND DIAGRAMS AND INTERNAL ELECTRIC FIELD
DISTRIBUTION 66
* 5.3.3 SUMMARY 68
5.4 DEGRADATION MECHANISMS OF GAN HEMTS IN DEPENDENCE ON BUFFER QUALITY
AND GATE TECHNOLOGY 69
5.4.1 ELECTROLUMINESCENCE 72
5.4.2 SUMMARY 77
6 G A N RELIABILITY INTERPRETATIONS 8 1
6.1 NATURE OF LEAKAGE DURING PINCHED-OFF STRESS 82
6.2 ELECTROLUMINESCENCE A T ON- AND OFF-STATE 85
6.2.1 ELECTROLUMINESCENCE A T OFF-STATE 86
6.2.2 ELECTROLUMINESCENCE A T ON-STATE 86
6.3 TEM INVESTIGATIONS OF DISLOCATIONS 91
7 CONCLUSIONS AND OUTLOOK 9 3
LIST O F PUBLICATIONS/CONFERENCES 9 7
BIBLIOGRAPHY 99
XII
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| spelling | Ivo, Ponky Verfasser aut AlGaN-GaN HEMTs reliability degradation modes and analysis vorgelegt von Ponky Ivo 2012 XII, 110 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Berlin, Techn. Univ., Diss., 2012 (DE-588)4113937-9 Hochschulschrift gnd-content Erscheint auch als Online-Ausgabe urn:nbn:de:kobv:83-opus-37049 https://nbn-resolving.org/urn:nbn:de:kobv:83-opus-37049 Resolving-System kostenfrei Volltext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025334102&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Ivo, Ponky AlGaN-GaN HEMTs reliability degradation modes and analysis |
| subject_GND | (DE-588)4113937-9 |
| title | AlGaN-GaN HEMTs reliability degradation modes and analysis |
| title_auth | AlGaN-GaN HEMTs reliability degradation modes and analysis |
| title_exact_search | AlGaN-GaN HEMTs reliability degradation modes and analysis |
| title_full | AlGaN-GaN HEMTs reliability degradation modes and analysis vorgelegt von Ponky Ivo |
| title_fullStr | AlGaN-GaN HEMTs reliability degradation modes and analysis vorgelegt von Ponky Ivo |
| title_full_unstemmed | AlGaN-GaN HEMTs reliability degradation modes and analysis vorgelegt von Ponky Ivo |
| title_short | AlGaN-GaN HEMTs reliability |
| title_sort | algan gan hemts reliability degradation modes and analysis |
| title_sub | degradation modes and analysis |
| topic_facet | Hochschulschrift |
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