MBE growth of GaAs nanowires and nanowire heterostructures:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
2012
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| Schlagworte: | |
| Online-Zugang: | Volltext https://nbn-resolving.org/urn:nbn:de:bvb:355-epub-256318 Inhaltsverzeichnis |
| Beschreibung: | 162 S. Ill., graph. Darst. |
Internformat
MARC
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| 003 | DE-604 | ||
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| 008 | 120816s2012 ad|| m||| 00||| eng d | ||
| 035 | |a (OCoLC)812236202 | ||
| 035 | |a (DE-599)BVBBV040367230 | ||
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| 100 | 1 | |a Rudolph, Andreas |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a MBE growth of GaAs nanowires and nanowire heterostructures |c presented by Andreas Rudolph |
| 264 | 1 | |c 2012 | |
| 300 | |a 162 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |a Regensburg, Univ., Diss., 2012 | ||
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| 856 | 4 | |u https://nbn-resolving.org/urn:nbn:de:bvb:355-epub-256318 |x Resolving-System | |
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Datensatz im Suchindex
| _version_ | 1804149412374511616 |
|---|---|
| adam_text | IMAGE 1
CONTENTS
1 I N T R O D U C T I O N 7
2 B A S I C S 1 3
2.1 M B E GROWTH 13
2.1.1 THERMODYNAMIC FUNDAMENTALS 13
2.1.2 N W GROWTH MODEL 15
2.1.3 N W CRYSTAL PHASE SELECTION 21
2.2 MAGNETISM 26
2.2.1 FERROMAGNETISM IN GAMNAS 28
2.2.2 MAGNETIC ANISOTROPICS IN GAMNAS 30
2.3 MAGNETIC A N D NON MAGNETIC NWS: STATE OF THE A R T 31
3 M E T H O D S 3 3
3.1 SAMPLE PREPARATION 33
3.1.1 DEPOSITION OF THE AU FILM 34
3.1.2 WET CHEMICAL ETCHING 34
3.1.3 CLEAVING A N D CHEMICAL CLEANING 35
3.2 SAMPLE HOLDER 36
3.2.1 DESIGN AND GEOMETRY OF THE SAMPLE HOLDER 36
3.2.2 TEMPERATURE BEHAVIOR OF THE GAAS SAMPLE HOLDER 38
3.3 MOLECULAR BEAM EPITAXY 41
3.3.1 T H E M B E SYSTEM 42
3.3.2 T H E R H E E D SYSTEM 44
3.4 POST GROWTH ANNEALING OVEN 47
3.5 CHARACTERIZATION TECHNIQUES 49
3.5.1 SCANNING ELECTRON MICROSCOPY 49
3.5.2 TRANSPORT MEASUREMENTS 51
3
HTTP://D-NB.INFO/1026428807
IMAGE 2
4
CONTENTS
4 T H E A U TECHNIQUE: M O R P H O L O G Y A N D C R Y S T A L S T R U C
T U R E O F G A A S N W S 5 5
4.1 MORPHOLOGY OF GAAS NANOWIRES * 56
4.1.1 INFLUENCE OF THE AU LAYER THICKNESS 56
4.1.2 INFLUENCE OF T H E GROWTH TEMPERATURE 58
4.1.3 INFLUENCE OF THE TOTAL AS4 AND G A FLUXES 59
4.1.4 INFLUENCE OF THE AS4/GA RATIO 61
4.1.5 CONCLUSION 62
4.2 CRYSTAL STRUCTURE OF GAAS NANOWIRES 63
4.2.1 T E M ANALYSIS OF T H E CATALYST DROPLET AND N W D RATIO 63
4.2.2 RELATING T H E N W D RATIO T O THE DROPLET COMPOSITION 66
4.2.3 RELATING DROPLET COMPOSITION T O N W CRYSTAL STRUCTURE 66
4.2.4 WURTZITE NANOWIRES 67
4.2.5 ZINC BLENDE NANOWIRES 69
4.2.6 CONCLUSION 71
4.3 POSITION CONTROLLED GROWTH OF GAAS NWS 72
4.3.1 PRE-STRUCTURING OF THE SUBSTRATES 72
4.3.2 GROWTH ON GAAS SUBSTRATES WITHOUT S I 0 2 LAYER 73
4.3.3 GROWTH ON SI SUBSTRATES WITH SI02 LAYER 75
4.3.4 CONCLUSION 81
5 T H E G A TECHNIQUE: G R O W T H O N S I 0 2 C O V E R E D S U B S T R
A T E S 8 3
5.1 GROWTH ON UNSTRUCTURED SUBSTRATES 84
5.1.1 INFLUENCE OF THE GROWTH TEMPERATURE 85
5.1.2 GROWTH ON SPUTTERED S I 0 2 86
5.1.3 GROWTH ON NATIVE S I 0 2 88
5.1.4 GROWTH ON THERMAL S I 0 2 90
5.1.5 CONCLUSION 90
5.2 GROWTH ON PRE-STRUCTURED SI SUBSTRATES 91
5.2.1 INFLUENCE OF THE G A PRE-DEPOSITION AND THE AS SPECIES 92
5.2.2 INFLUENCE OF T H E A S 2 / G A RATIO 94
5.2.3 INFLUENCE OF THE GROWTH TEMPERATURE 96
5.2.4 CONCLUSION 97
5.3 GROWTH ON PRE-STRUCTURED GAAS SUBSTRATES 98
5.3.1 INFLUENCE OF THE G A PRE-DEPOSITION 98
5.3.2 INFLUENCE OF T H E AS/T/GA RATIO 100
5.3.3 MODIFICATION OF THE CURRENT GROWTH MODEL 103
5.3.4 CONCLUSION 104
IMAGE 3
CONTENTS 5
6 N W HETEROSTRUCTURES: M A G N E T I C N W S 1 0 7
6.1 OPTIMIZING GAMNAS GROWTH ON (110) ORIENTED GAAS SUBSTRATES . . . 1 0
8 6.1.1 ADJUSTING THE GROWTH TEMPERATURE AND AS4/GA RATIO 108
6.1.2 ADJUSTING THE MN CONTENT I L L
6.1.3 CONCLUSION 112
6.2 GROWTH OF GAAS/GAMNAS CORE SHELL NWS 113
6.2.1 ADJUSTING THE GAMNAS GROWTH PARAMETERS 114
6.2.2 STRUCTURAL PROPERTIES OF GAAS/GAMNAS CORE SHELL NWS . . . . 116
6.2.3 MAGNETIC PROPERTIES OF GAAS/GAMNAS CORE SHELL NWS . . . . 120
6.2.4 CONCLUSION 125
6.3 POST GROWTH ANNEALING 127
7 C O N C L U S I O N 1 3 1
8 O U T L O O K 1 3 7
9 A C K N O W L E D G M E N T 1 3 9
A T H E INFLUENCE O F SURFACE P R E P A R A T I O N A N D A S 2 1 4 3
A . L SURFACE PREPARATION 143
A. 1.1 INFLUENCE OF THE OXIDE DESORPTION PROCEDURE 143
A. 1.2 INFLUENCE OF THE BUFFER LAYER A N D H F ETCHING 145
A. 1.3 CONCLUSION 147
A.2 INFLUENCE OF THE A S 2 / G A RATIO 147
L I T E R A T U R E 151
|
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| author | Rudolph, Andreas |
| author_facet | Rudolph, Andreas |
| author_role | aut |
| author_sort | Rudolph, Andreas |
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| ctrlnum | (OCoLC)812236202 (DE-599)BVBBV040367230 |
| discipline | Physik |
| format | Thesis Book |
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| illustrated | Illustrated |
| indexdate | 2024-07-10T00:22:37Z |
| institution | BVB |
| language | English |
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| physical | 162 S. Ill., graph. Darst. |
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| spelling | Rudolph, Andreas Verfasser aut MBE growth of GaAs nanowires and nanowire heterostructures presented by Andreas Rudolph 2012 162 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Regensburg, Univ., Diss., 2012 Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf Nanodraht (DE-588)4707308-1 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Molekularstrahlepitaxie (DE-588)4170399-6 s Nanodraht (DE-588)4707308-1 s DE-604 Erscheint auch als Online-Ausgabe urn:nbn:de:bvb:355-epub-256318 http://epub.uni-regensburg.de/25631/ Verlag kostenfrei Volltext https://nbn-resolving.org/urn:nbn:de:bvb:355-epub-256318 Resolving-System DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025220920&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Rudolph, Andreas MBE growth of GaAs nanowires and nanowire heterostructures Molekularstrahlepitaxie (DE-588)4170399-6 gnd Nanodraht (DE-588)4707308-1 gnd |
| subject_GND | (DE-588)4170399-6 (DE-588)4707308-1 (DE-588)4113937-9 |
| title | MBE growth of GaAs nanowires and nanowire heterostructures |
| title_auth | MBE growth of GaAs nanowires and nanowire heterostructures |
| title_exact_search | MBE growth of GaAs nanowires and nanowire heterostructures |
| title_full | MBE growth of GaAs nanowires and nanowire heterostructures presented by Andreas Rudolph |
| title_fullStr | MBE growth of GaAs nanowires and nanowire heterostructures presented by Andreas Rudolph |
| title_full_unstemmed | MBE growth of GaAs nanowires and nanowire heterostructures presented by Andreas Rudolph |
| title_short | MBE growth of GaAs nanowires and nanowire heterostructures |
| title_sort | mbe growth of gaas nanowires and nanowire heterostructures |
| topic | Molekularstrahlepitaxie (DE-588)4170399-6 gnd Nanodraht (DE-588)4707308-1 gnd |
| topic_facet | Molekularstrahlepitaxie Nanodraht Hochschulschrift |
| url | http://epub.uni-regensburg.de/25631/ https://nbn-resolving.org/urn:nbn:de:bvb:355-epub-256318 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025220920&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT rudolphandreas mbegrowthofgaasnanowiresandnanowireheterostructures |