Semiconductor nanostructures for optoelectronic devices: processing, characterization and applications
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2012
|
| Schriftenreihe: | Nanoscience and technology
|
| Schlagworte: | |
| Online-Zugang: | Inhaltstext Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | XIV, 335 S. Ill., graph. Darst. 24 cm |
| ISBN: | 9783642224799 3642224792 9783642224805 |
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Datensatz im Suchindex
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| adam_text |
IMAGE 1
CONTENTS
1 VAPOR-LIQUID-SOLID GROWTH OF SEMICONDUCTOR NANOWIRES 1
HEON-JIN CHOI 1.1 INTRODUCTION 1
1.2 VLS MECHANISM FOR ONE-DIMENSIONAL CRYSTAL GROWTH 3
1.2.1 REQUIREMENTS FOR METAL CATALYST 5
1.2.2 PHASE DIAGRAM 6
1.2.3 KINETICS AND RATE-DETERMINING STEP 8
1.2.4 SIZE OF THE METAL CATALYST 9
1.3 GROWTH OF NANOWIRES BY THE VLS MECHANISM AND CURRENT ISSUES FOR
OPTOELECTRONICS 10
1.3.1 GROWTH OF SEMICONDUCTOR NANOWIRES BY THE VLS MECHANISM 10
1.3.2 ISSUES ASSOCIATED WITH THE VLS MECHANISM FOR OPTOELECTRONICS 11
1.4 DEVICES BASED ON THE VLS MECHANISM 27
1.5 SUMMARY AND PERSPECTIVES 33
REFERENCES 35
2 CATALYST-FREE METAL-ORGANIC VAPOR-PHASE EPITAXY OF ZNO AND GAN
NANOSTRUCTURES FOR VISIBLE LIGHT-EMITTING DEVICES 37
CHUL-HO LEE AND GYU-CHUL YI 2.1 INTRODUCTION 37
2.2 CATALYST-FREE MOVPE OF ZNO NANORODS 39
2.3 POSITION-CONTROLLED GROWTH OF ZNO AND GAN NANOSTRUCTURES 46 2.4
LIGHT-EMITTING DEVICE APPLICATIONS 53
2.5 CONCLUSIONS AND PERSPECTIVES 62
REFERENCES 63
VII
HTTP://D-NB.INFO/1012892433
IMAGE 2
VIII C O N T E N T S
3 III-V SEMICONDUCTOR NANOWIRES ON SI BY SELECTIVE-AREA
METAL-ORGANIC VAPOR PHASE EPITAXY 67
KATSUHIRO TOMIOKA AND TAKASHI FUKUI 3.1 INTRODUCTION 67
3.2 OPTICAL APPLICATION O F SEMICONDUCTOR NWS 69
3.3 GROWTH OF NWS BY SELECTIVE-AREA METAL-ORGANIC VAPOR PHASE EPITAXY 71
3.3.1 PROCESS OF SA-MOVPE FOR NW GROWTH 72
3.3.2 CRYSTAL SHAPE IN SA-MOVPE 73
3.3.3 GROWTH O F CORE-SHELL STRUCTURES 76
3.4 HETEROEPITAXY OF III-V NWS ON SI SUBSTRATE 77
3.4.1 BASIC CONCEPT FOR SELECTIVE-AREA GROWTH OF III-V NWS ON SI 79
3.4.2 SELECTIVE-AREA GROWTH O F INAS NWS ON SI 81
3.4.3 SELECTIVE-AREA GROWTH OF GAAS NWS ON SI 85
3.4.4 SIZE DEPENDENCE O F THE GAAS NW GROWTH ON SI 86
3.4.5 GROWTH OF GAAS/ALGAAS CORE-SHELL NWS ON SI 88
3.5 FABRICATION OF III-V NW-BASED LEDS ON SI SURFACE 89
3.5.1 GROWTH OF ALGAAS/GAAS/ALGAAS DOUBLE-HETEROSTRUCTURES IN CMS NWS ON
SI 90
3.5.2 FABRICATION OF CMS NW-BASED LEDS ON SI 90
3.5.3 GAAS/GAASP CMS STRUCTURE AND MULTI-QUANTUM WELL LAYERS FOR LASER
DIODES 93 3.6 SUMMARY 96
REFERENCES 97
4 SYNTHESIS AND PROPERTIES O F ALUMINUM NITRIDE NANOSTRUCTURES 103
DANIEL S.P. LAU AND X.H. JI 4.1 INTRODUCTION 103
4.1.1 OVERVIEW 103
4.1.2 PROPERTIES OF A1N 104
4.2 SYNTHESIS O F A1N NANOSTRUCTURES 105
4.2.1 VAPOR-LIQUID-SOLID GROWTH 106
4.2.2 VAPOR-SOLID GROWTH 109
4.3 DOPING OF A1N NANOSTRUCTURES 117
4.4 PHYSICAL PROPERTIES OF A1N NANOSTRUCTURES 120
4.4.1 STRUCTURAL PROPERTIES RAMAN SPECTRA 120
4.4.2 OPTICAL PROPERTIES OF A1N NANOSTRUCTURES 123
4.4.3 FERROMAGNETIC PROPERTIES 129
4.5 CONCLUDING REMARKS AND PERSPECTIVES 132
REFERENCES 133
5 SEMICONDUCTOR NANOWIRE HETEROSTRUCTURES: CONTROLLED GROWTH AND
OPTOELECTRONIC APPLICATIONS 137
CHUANWEI CHENG AND HONG JIN FAN 5.1 INTRODUCTION 137
IMAGE 3
C O N T E N T S I X
5.2 SYNTHESIS OF SEMICONDUCTOR NW HETEROSTRUCTURES 139
5.2.1 SEGMENTED NW HETEROSTRUCTURES 139
5.2.2 COAXIAL AND CORE/MULTISHELL SEMICONDUCTOR NW HETEROSTRUCTURES 145
5.2.3 BRANCHED SEMICONDUCTOR NW HETEROSTRUCTURES 150 5.3 APPLICATIONS O
F SEMICONDUCTOR NW HETEROSTRUCTURES 156
5.3.1 OPTICAL PROPERTIES 156
5.3.2 PHOTOVOLTAICS AND PHOTOELECTROCHEMICAL WATER SPLITTING 157
5.3.3 PHOTODETECTORS 160
5.4 CONCLUSIONS AND PERSPECTIVE 162
REFERENCES 163
6 HYBRID SEMICONDUCTOR NANOSTRUCTURES WITH GRAPHENE LAYERS 167
WON II PARK, JUNG MIN LEE, DONG HYUN LEE, AND GYU-CHUL YI 6.1
INTRODUCTION 167
6.2 GRAPHENE: 2D MATERIALS FOR TRANSPARENT CONDUCTING LAYERS 169 6.2.1
PHYSICAL PROPERTIES OF GRAPHENE 169
6.2.2 SYNTHESIS AND APPLICATION OF GRAPHENE 171
6.3 HYBRID SEMICONDUCTOR NANOSTRUCTURES WITH GRAPHENE: 0D-2D, 1D-2D, AND
2D-2D HYBRIDS 175
6.3.1 HYBRID LAMELLAR COMPOSITES: 2D-2D HYBRIDS 175
6.3.2 NANOPARTICLE-GRAPHENE HYBRIDS: 0D-2D HYBRIDS 177 6.3.3
NANOROD-GRAPHENE HYBRIDS: 1D-2D HYBRIDS 177
6.4 1D-2D NANOROD-GRAPHENE HYBRIDS FOR ELECTRONICS AND OPTOELECTRONICS
179
6.4.1 VERTICAL ID NANOSTRUCTURES ON 2D GRAPHENE 180
6.4.2 2D GRAPHENE ON VERTICAL ID NANOSTRUCTURES 183
6.4.3 MULTISTAGE HYBRID NANOARCHITECTURES: PILLARED GRAPHENE 186
6.4.4 APPLICATION OF 1D-2D HYBRIDS FOR ELECTRONICS AND OPTOELECTRONICS
187
6.5 CONCLUSIONS 192
REFERENCES 193
7 MICROSTRUCTURAL PROPERTIES O F NANOSTRUCTURES 197
SANG-WOOK HAN 7.1 INTRODUCTION 197
7.2 X-RAY ABSORPTION FINE STRUCTURE 199
7.3 ZNO NANOPARTICLES 203
7.4 ZNO NANORODS 209
7.5 COAXIAL GAN/ZNO NANORODS 212
7.6 ZNO NANORODS ON GAN AND ,4/203 SUBSTRATES 215
7.7 CONCLUSIONS 221
REFERENCES 222
IMAGE 4
X C O N T E N T S
8 LUMINESCENCE CHARACTERIZATIONS O F SEMICONDUCTOR
NANOSTRUCTURES 225
JINKYOUNG YOO 8.1 INTRODUCTION 225
8.2 RADIATIVE RECOMBINATION IN ID SEMICONDUCTOR NANOSTRUCTURES 226
8.3 LUMINESCENCE CHARACTERIZATIONS O F ID SEMICONDUCTOR NANOSTRUCTURES
228
8.3.1 LOCAL PROBE TECHNIQUES 228
8.3.2 LUMINESCENT CHARACTERISTICS OF SEMICONDUCTOR NANOSTRUCTURES 234
8.4 THE LIMIT OF LUMINESCENCE CHARACTERIZATIONS 246
8.5 SUMMARY 248
REFERENCES 249
9 LASING CHARACTERISTICS OF SINGLE AND ASSEMBLED NANOWIRES 25 1 S.F. YU
9.1 INTRODUCTION 251
9.2 LASING CHARACTERISTICS OF SINGLE NANOWIRES 252
9.2.1 FEEDBACK MECHANISM O F SINGLE-NANOWIRE LASERS 253 9.2.2 MODAL
CHARACTERISTICS OF NANOWIRES WITH DIFFERENT GEOMETRIES 255
9.2.3 NEAR-AND FAR-FIELD PROFILES 260
9.2.4 CRITERIA TO ACHIEVE STIMULATED EMISSION 262
9.3 LASING CHARACTERISTICS OF ASSEMBLED NANOWIRES 263
9.3.1 WHAT IS A RANDOM LASER? 263
9.3.2 FEEDBACK MECHANISM OF RANDOM LASERS 264
9.3.3 FORMATION OF RANDOM CAVITIES USING ASSEMBLED NANOWIRES 266
9.3.4 CRITERIA TO ACHIEVE STIMULATED EMISSION 270
9.4 SINGLE AND ASSEMBLED NANOWIRES LASER DIODES 272
9.4.1 SINGLE-NANOWIRE ELECTRICALLY DRIVEN LASERS 272
9.4.2 ELECTRICALLY PUMPED NANOWIRE ARRAY LASERS 272
9.5 CONCLUSION AND DISCUSSION 275
REFERENCES 277
10 NANOPHOTONIC DEVICE APPLICATION USING SEMICONDUCTOR NANOROD
HETEROSTRUCTURES 279
TAKASHI YATSUI, GYU-CHUL YI, AND MOTOICHI OHTSU 10.1 INTRODUCTION 279
10.2 ZNO NANOROD HETEROSTRUCTURE FOR NANOPHOTONIC DEVICE 280 10.3
NEAR-FIELD EVALUATION OF ISOLATED ZNO NANOROD SINGLE-QUANTUM-WELL
STRUCTURE FOR NANOPHOTONIC DEVICE 280 10.4 A NANOPHOTONIC AND-GATE
DEVICE USING ZNO
NANOROD DOUBLE-QUANTUM-WELL STRUCTURES 286
10.5 CONCLUSIONS 294
REFERENCES 295
IMAGE 5
CONTENTS XI
11 SEMICONDUCTOR NANOWIRES FOR SOLAR CELLS 297
S.T. PICRAUX, J. YOO, I.H. CAMPBELL, S.A. DAYEH, AND D.E. PEREA 11.1
INTRODUCTION 297
11.2 KEY CONCEPTS 300
11.3 NANOWIRE FABRICATION 302
11.4 OVERVIEW OF NANOWIRE SOLAR CELL STUDIES 303
11.5 ENHANCED OPTICAL ABSORPTION IN NANOWIRE ARRAYS 310
11.5.1 BASIC PRINCIPLES OF NW ARRAY OPTICS 311
11.5.2 EXPERIMENTAL DEMONSTRATIONS OF INCREASED ABSORPTION 314
11.6 OPTOELECTRONIC PROPERTIES OF RADIAL NANOWIRE DIODES 316 11.7 SOLAR
CELL PERFORMANCE: COMBINED OPTICAL AND ELECTRICAL PROPERTIES 320
11.8 INTEGRATION STRATEGIES FOR NANOWIRE SOLAR CELLS 322
11.8.1 GENERAL APPROACHES 322
11.9 CONCLUSIONS 326
REFERENCES 326
INDEX 329 |
| any_adam_object | 1 |
| author2 | Yi, Chʻŏl-gyu 1947- |
| author2_role | edt |
| author2_variant | c g y cgy |
| author_GND | (DE-588)1021792098 |
| author_facet | Yi, Chʻŏl-gyu 1947- |
| building | Verbundindex |
| bvnumber | BV040307213 |
| classification_rvk | UH 5500 |
| ctrlnum | (OCoLC)779521497 (DE-599)DNB1012892433 |
| dewey-full | 537.6226 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.6226 |
| dewey-search | 537.6226 |
| dewey-sort | 3537.6226 |
| dewey-tens | 530 - Physics |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV040307213 |
| illustrated | Illustrated |
| indexdate | 2024-07-21T00:39:07Z |
| institution | BVB |
| isbn | 9783642224799 3642224792 9783642224805 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-025162098 |
| oclc_num | 779521497 |
| open_access_boolean | |
| owner | DE-19 DE-BY-UBM DE-83 DE-898 DE-BY-UBR |
| owner_facet | DE-19 DE-BY-UBM DE-83 DE-898 DE-BY-UBR |
| physical | XIV, 335 S. Ill., graph. Darst. 24 cm |
| publishDate | 2012 |
| publishDateSearch | 2012 |
| publishDateSort | 2012 |
| publisher | Springer |
| record_format | marc |
| series2 | Nanoscience and technology |
| spelling | Semiconductor nanostructures for optoelectronic devices processing, characterization and applications Gyu-Chul Yi (ed.) Berlin [u.a.] Springer 2012 XIV, 335 S. Ill., graph. Darst. 24 cm txt rdacontent n rdamedia nc rdacarrier Nanoscience and technology Literaturangaben Nanophotonik (DE-588)7618094-3 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Nanostrukturiertes Material (DE-588)4342626-8 gnd rswk-swf Optoelektronisches Bauelement (DE-588)4043689-5 gnd rswk-swf Nanostruktur (DE-588)4204530-7 gnd rswk-swf Optoelektronischer Werkstoff (DE-588)4295788-6 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Nanostruktur (DE-588)4204530-7 s Nanophotonik (DE-588)7618094-3 s Optoelektronisches Bauelement (DE-588)4043689-5 s DE-604 Optoelektronischer Werkstoff (DE-588)4295788-6 s Nanostrukturiertes Material (DE-588)4342626-8 s Yi, Chʻŏl-gyu 1947- (DE-588)1021792098 edt Erscheint auch als Online-Ausgabe Semiconductor Nanostructures for Optoelectronic Devices X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=3843057&prov=M&dok_var=1&dok_ext=htm Inhaltstext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025162098&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Semiconductor nanostructures for optoelectronic devices processing, characterization and applications Nanophotonik (DE-588)7618094-3 gnd Halbleiter (DE-588)4022993-2 gnd Nanostrukturiertes Material (DE-588)4342626-8 gnd Optoelektronisches Bauelement (DE-588)4043689-5 gnd Nanostruktur (DE-588)4204530-7 gnd Optoelektronischer Werkstoff (DE-588)4295788-6 gnd |
| subject_GND | (DE-588)7618094-3 (DE-588)4022993-2 (DE-588)4342626-8 (DE-588)4043689-5 (DE-588)4204530-7 (DE-588)4295788-6 |
| title | Semiconductor nanostructures for optoelectronic devices processing, characterization and applications |
| title_auth | Semiconductor nanostructures for optoelectronic devices processing, characterization and applications |
| title_exact_search | Semiconductor nanostructures for optoelectronic devices processing, characterization and applications |
| title_full | Semiconductor nanostructures for optoelectronic devices processing, characterization and applications Gyu-Chul Yi (ed.) |
| title_fullStr | Semiconductor nanostructures for optoelectronic devices processing, characterization and applications Gyu-Chul Yi (ed.) |
| title_full_unstemmed | Semiconductor nanostructures for optoelectronic devices processing, characterization and applications Gyu-Chul Yi (ed.) |
| title_short | Semiconductor nanostructures for optoelectronic devices |
| title_sort | semiconductor nanostructures for optoelectronic devices processing characterization and applications |
| title_sub | processing, characterization and applications |
| topic | Nanophotonik (DE-588)7618094-3 gnd Halbleiter (DE-588)4022993-2 gnd Nanostrukturiertes Material (DE-588)4342626-8 gnd Optoelektronisches Bauelement (DE-588)4043689-5 gnd Nanostruktur (DE-588)4204530-7 gnd Optoelektronischer Werkstoff (DE-588)4295788-6 gnd |
| topic_facet | Nanophotonik Halbleiter Nanostrukturiertes Material Optoelektronisches Bauelement Nanostruktur Optoelektronischer Werkstoff |
| url | http://deposit.dnb.de/cgi-bin/dokserv?id=3843057&prov=M&dok_var=1&dok_ext=htm http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025162098&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT yichʻolgyu semiconductornanostructuresforoptoelectronicdevicesprocessingcharacterizationandapplications |