Application manual power semiconductors:
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Ilmenau
ISLE-Verl.
2011
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | VI, 454 S. Ill., graph. Darst. |
| ISBN: | 9783938843666 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV040303270 | ||
| 003 | DE-604 | ||
| 005 | 20120824 | ||
| 007 | t | ||
| 008 | 120710s2011 gw ad|| |||| 00||| eng d | ||
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| 020 | |a 9783938843666 |c kart. : EUR 9.90 (DE), EUR 10.20 (AT) |9 978-3-938843-66-6 | ||
| 035 | |a (OCoLC)794510891 | ||
| 035 | |a (DE-599)DNB101869319X | ||
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| 084 | |a ZN 8340 |0 (DE-625)157614: |2 rvk | ||
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| 245 | 1 | 0 | |a Application manual power semiconductors |c publ. by SEMIKRON International GmbH. Arendt Wintrich ... |
| 264 | 1 | |a Ilmenau |b ISLE-Verl. |c 2011 | |
| 300 | |a VI, 454 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 0 | 7 | |a Leistungshalbleiter |0 (DE-588)4167286-0 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Leistungshalbleiter |0 (DE-588)4167286-0 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Wintrich, Arendt |d 1965- |e Sonstige |0 (DE-588)118178199 |4 oth | |
| 710 | 2 | |a SEMIKRON International GmbH |e Sonstige |0 (DE-588)2173200-0 |4 oth | |
| 775 | 0 | 8 | |i Parallele Sprachausgabe |n deutsch |t Applikationshandbuch Leistungshalbleiter |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025158251&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-025158251 | ||
Datensatz im Suchindex
| _version_ | 1804149321524838400 |
|---|---|
| adam_text | IMAGE 1
CONTENTS
1 POWER SEMICONDUCTORS: BASIC OPERATING PRINCIPLES 1
1.1 BASICS FOR THE OPERATION O F POWER SEMICONDUCTORS 1
1.2 POWER ELECTRONIC SWITCHES 5
2 BASICS 13
2.1 APPLICATION FIELDS AND CURRENT PERFORMANCE LIMITS FOR P O W E R
SEMICONDUCTORS 13
2.2 LINE RECTIFIERS 17
2.2.1 RECTIFIER DIODES 17
2.2.1.1 GENERAL TERMS 17
2.2.1.2 STRUCTURE AND FUNCTIONAL PRINCIPLE 18
2.2.1.3 STATIC BEHAVIOUR 2 0
2.2.1.4 DYNAMIC BEHAVIOUR 2 0
2.2.2 THYRISTORS 2 2
2.2.2.1 GENERAL TERMS 2 2
2.2.2.2 STRUCTURE AND FUNCTIONAL PRINCIPLE 2 3
2.2.2.3 STATIC BEHAVIOUR 2 5
2.2.2.4 DYNAMIC BEHAVIOUR 2 6
2.3 FREEWHEELING AND SNUBBER DIODES 2 8
2.3.1 STRUCTURE AND FUNCTIONAL PRINCIPLE 2 8
2.3.1.1 SCHOTTKY DIODES 2 9
2.3.1.2 PIN DIODES 3 0
2.3.2 STATIC BEHAVIOUR 32
2.3.2.1 ON-STATE BEHAVIOUR 3 2
2.3.2.2 BLOCKING BEHAVIOUR 3 3
2.3.3 DYNAMIC BEHAVIOUR 3 4
2.3.3.1 TURN-ON BEHAVIOUR 3 4
2.3.3.2 TURN-OFF BEHAVIOUR 3 5
2.3.3.3 DYNAMIC RUGGEDNESS 4 3
2.4 POWER M O S F E T AND IGBT 4 3
2.4.1 STRUCTURE AND FUNCTIONAL PRINCIPLE 4 3
2.4.2 IGBT 4 6
2.4.2.1 STATIC BEHAVIOUR 4 8
2.4.2.2 SWITCHING BEHAVIOUR 4 9
2.4.2.3 IGBT - CONCEPTS AND N E W DIRECTIONS O F DEVELOPMENT 5 4
2.4.3 POWER M O S F E T 6 1
2.4.3.1 STATIC BEHAVIOUR 6 3
2.4.3.2 SWITCHING BEHAVIOUR 6 6
2.4.3.3 LATEST VERSIONS AND N E W DIRECTIONS O F DEVELOPMENT 6 9
2.5 PACKAGING 72
2.5.1 TECHNOLOGIES 7 3
2.5.1.1 SOLDERING 7 3
2.5.1.2 DIFFUSION SINTERING (LOW-TEMPERATURE JOINING TECHNOLOGY) 7 3
2.5.1.3 WIRE BONDING 7 5
2.5.1.4 PRESSURE CONTACT 7 5
2.5.1.5 ASSEMBLY AND CONNECTION TECHNOLOGY 7 6
2.5.1.6 MODULES WITH O R WITHOUT BASE PLATE 7 8
2.5.2 FUNCTIONS AND FEATURES 8 0
2.5.2.1 INSULATION 8 0
2.5.2.2 HEAT DISSIPATION AND THERMAL RESISTANCE 8 2
2.5.2.3 POWER CYCLING CAPABILITY 91
2.5.2.4 CURRENT CONDUCTION TO THE MAIN TERMINALS 9 1
2.5.2.5 LOW-INDUCTANCE INTERNAL STRUCTURE 9 2
2.5.2.6 COUPLING CAPACITANCES 9 3
2.5.2.7 CIRCUIT COMPLEXITY 9 4
HTTP://D-NB.INFO/101869319X
IMAGE 2
2.5.2.8 DEFINED AND SAFE FAILURE BEHAVIOUR IN THE EVENT O F MODULE
DEFECTS 9 6
2.5.2.9 ENVIRONMENTALLY COMPATIBLE RECYCLING 9 6
2.5.3 DISCRETE DEVICES 9 7
2.5.3.1 SMALL RECTIFIERS 9 7
2.5.3.2 STUD-MOUNTED DIODES AND STUD THYRISTORS 9 8
2.5.3.3 DISK CELLS 9 8
2.5.3.4 SEMISTART 9 9
2.5.4 POWER MODULES 100
2.5.4.1 BASICS 100
2.5.4.2 MODULE FAMILIES CONTAINING DIODES AND THYRISTORS 101
2.5.4.3 MODULE FAMILIES INCLUDING IGBT AND FREEWHEELING DIODES 104
2.6 INTEGRATION O F SENSORS, PROTECTIVE EQUIPMENT AND DRIVER ELECTRONICS
110
2.6.1 MODULES WITH INTEGRATED CURRENT MEASUREMENT 110
2.6.2 MODULES WITH INTEGRATED TEMPERATURE MEASUREMENT 111
2.6.3 IPM (INTELLIGENT POWER MODULE) 114
2.7 RELIABILITY 115
2.7.1 MTBF, MTTF AND FIT RATE 116
2.7.2 ACCELERATED TESTING ACCORDING TO ARRHENIUS 116
2.7.3 STANDARD TESTS FOR THE PRODUCT QUALIFICATION AND POSTQUALIFICATION
117
2.7.3.1 HIGH TEMPERATURE REVERSE BIAS TEST (HTRB), HIGH TEMPERATURE GATE
BIAS TEST (HTGB), HIGH HUMIDITY HIGH TEMPERATURE REVERSE BIAS TEST (THB)
118 2.7.3.2 HIGH AND LOW TEMPERATURE STORAGE (HTS, LTS) 118
2.7.3.3 TEMPERATURE CYCLING TEST (TC) 118
2.7.3.4 POWER CYCLING TEST (PC) 119
2.7.3.5 VIBRATION TEST 120
2.7.4 ADDITIONAL TESTS FOR SPRING CONTACTS 120
2.7.4.1 MICRO-VIBRATION (FRETTING CORROSION) 120
2.7.4.2 CORROSIVE ATMOSPHERE (POLLUTION GAS TEST) 121
2.7.4.3 CONTACT-TO-PCB TEMPERATURE CYCLING 121
2.7.5 FAILURE MECHANISMS DURING POWER CYCLING 122
2.7.6 EVALUATION O F TEMPERATURE CURVES REGARDING MODULE LIFETIME 126
DATASHEET RATINGS FOR MOSFET, IGBT, DIODES AND THYRISTORS 131
3.1 STANDARDS, SYMBOLS AND TERMS 131
3.1.1 STANDARDS 131
3.1.2 LETTER SYMBOLS AND TERMS 131
3.1.3 MAXIMUM RATINGS AND CHARACTERISTICS 133
3.1.4 COMPONENT (TYPE) DESIGNATION SYSTEM 133
3.2 RECTIFIER DIODES AND THYRISTORS 134
3.2.1 TEMPERATURES 134
3.2.2 THERMAL IMPEDANCE AND THERMAL RESISTANCE 136
3.2.3 MECHANICAL DATA 138
3.2.4 RECTIFIER DIODES 138
3.2.4.1 MAXIMUM RATINGS 138
3.2.4.2 CHARACTERISTICS 141
3.2.4.3 DIAGRAMS 145
3.2.5 THYRISTORS 146
3.2.5.1 MAXIMUM RATINGS 146
3.2.5.2 CHARACTERISTICS 148
3.2.5.3 DIAGRAMS 156
3.2.6 DIODE AND THYRISTOR MODULES 157
3.2.6.1 MAXIMUM RATINGS AND CHARACTERISTICS 157
3.2.6.2 DIAGRAMS : 157
3.3 IGBT MODULES 158
3.3.1 MAXIMUM RATINGS 160
IMAGE 3
3.3.1.1 IGBT MAXIMUM RATINGS 160
3.3.1.2 MAXIMUM RATINGS O F INTEGRATED INVERSE DIODES (FREEWHEELING
DIODES) 162 3.3.1.3 MAXIMUM MODULE RATINGS 163
3.3.2 CHARACTERISTICS 163
3.3.2.1 IGBT CHARACTERISTICS 164
3.3.2.2 CHARACTERISTICS O F INTEGRATED HYBRID INVERSE DIODES
(FREEWHEELING DIODES)... 170 3.3.2.3 MODULE LAYOUT CHARACTERISTICS 172
3.3.3 DIAGRAMS 173
3.3.4 SAFE OPERATING AREAS DURING SWITCHING OPERATION 181
3.3.4.1 MAXIMUM SAFE OPERATING AREA DURING SINGLE-PULSE OPERATION AND
PERIODIC TURN-ON (SOA) 181
3.3.4.2 TURN-OFF SAFE OPERATING AREA (RBSOA) 182
3.3.4.3 SAFE OPERATING AREA DURING SHORT CIRCUIT 183
3.4 POWER M O S F E T MODULES 184
3.4.1 MAXIMUM RATINGS 184
3.4.1.1 MAXIMUM FORWARD RATINGS O F POWER M O S F E T 184
3.4.1.2 MAXIMUM RATINGS O F THE INVERSE DIODES (POWER M O S F E T
RATINGS IN REVERSE DIRECTION) 185
3.4.1.3 MAXIMUM MODULE RATINGS 185
3.4.2 CHARACTERISTICS 186
3.4.2.1 POWER M O S F E T CHARACTERISTICS 186
3.4.2.2 CHARACTERISTICS O F INVERSE DIODES (POWER M O S F E T IN REVERSE
DIRECTION) .... 189 3.4.2.3 MECHANICAL MODULE DATA 190
3.4.3 DIAGRAMS 190
3.5 SUPPLEMENTARY INFORMATION ON CI, C B AND CIB POWER MODULES 196
3.6 SUPPLEMENTARY INFORMATION ON IPMS 198
3.6.1 SKIIP 198
3.6.1.1 MAXIMUM RATINGS O F THE POWER SECTION 2 0 1
3.6.1.2 MAXIMUM RATINGS O F A SKIIP DRIVER 2 0 1
3.6.1.3 CHARACTERISTICS O F THE SKIIP POWER SECTION 2 0 3
3.6.1.4 SKIIP DRIVER CHARACTERISTICS 2 0 5
3.6.2 MINISKIIP IPM 2 0 9
3.6.2.1 MAXIMUM RATINGS O F THE MINISKIIP IPM DRIVER 211
3.6.2.2 ELECTRICAL CHARACTERISTICS O F THE MINISKIIP IPM DRIVER 2 1 2
4 APPLICATION NOTES FOR THYRISTORS AND RECTIFIER DIODES 215
4.1 THYRISTOR AND RECTIFIER DIMENSIONING AND SELECTION 2 1 5
4.1.1 REVERSE VOLTAGE 2 1 5
4.1.2 RECTIFIER DIODES 2 1 6
4.1.2.1 THERMAL LOAD IN CONTINUOUS DUTY 2 1 6
4.1.2.2 OPERATION WITH SHORT-TIME AND INTERMITTENT LOAD 2 1 7
4.1.2.3 LOAD AT HIGHER FREQUENCIES 2 1 8
4.1.2.4 RATED SURGE FORWARD CURRENT FOR TIMES BELOW AND ABOVE 10 MS 2 1
8
4.1.3 THYRISTORS 2 1 9
4.1.3.1 LOAD IN CONTINUOUS DUTY 2 1 9
4.1.3.2 OPERATION WITH SHORT-TIME AND INTERMITTENT LOAD 2 2 1
4.1.3.3 MAXIMUM SURGE ON-STATE CURRENT FOR TIMES BELOW AND ABOVE 10 MS 2
2 2
4.1.3.4 CRITICAL RATE O F RISE O F CURRENT AND VOLTAGE 2 2 2
4.1.3.5 FIRING PROPERTIES 2 2 3
4.1.4 THYRISTOR DIODE MODULES 2 2 3
4.1.5 BRIDGE RECTIFIERS 2 2 5
4.1.6 SEMISEL DIMENSIONING SOFTWARE 2 2 5
4.2 COOLING RECTIFIER COMPONENTS 2 2 8
4.2.1 COOLING LOW-POWER COMPONENTS 2 2 8
4.2.2 COOLING PLATES 2 2 8
4.2.3 HEATSINKS 2 3 1
IN
IMAGE 4
4.2.4 ENHANCED AIR COOLING 2 3 3
4.2.5 DISC CELLS: WATER COOLING 2 3 6
4.3 DRIVERS FOR THYRISTORS 2 3 6
4.3.1 DRIVE PULSE SHAPE 2 3 6
4.3.2 DRIVING SIX-PULSE BRIDGE CIRCUITS 2 3 9
4.3.3 PULSE TRANSFORMERS 2 3 9
4.3.4 PULSE GENERATION 2 4 0
4.4 FAULT BEHAVIOUR AND DIODE / THYRISTOR PROTECTION 2 4 0
4.4.1 GENERAL VOLTAGE SURGE PROTECTION 2 4 0
4.4.2 OVERVOLTAGE PROTECTION USING RESISTORS AND CAPACITORS 2 4 1
4.4.2.1 SNUBBERS FOR SINGLE SWITCHES 2 4 1
4.4.2.2 A C SIDE SNUBBER 2 4 6
4.4.2.3 DC SIDE SNUBBER CIRCUITS 2 5 0
4.4.3 OVERVOLTAGE PROTECTION USING VARISTORS 2 5 1
4.4.4 SNUBBER CIRCUITS BASED ON SILICON AVALANCHE DIODES 2 5 2
4.4.4.1 AVALANCHE RECTIFIER DIODES FEATURING SELF-PROTECTION 2 5 2
4.4.4.2 AVALANCHE DIODES AS PROTECTION FOR OTHER COMPONENTS 2 5 3
4.4.4.3 RESTRICTIONS IN APPLICATION RANGE 2 5 3
4.4.4.4 CASE TYPES 2 5 4
4.4.5 OVERCURRENT PROTECTION FOR DIODES AND THYRISTORS 2 5 4
4.4.5.1 DEVICES FOR PROTECTION FROM OVERCURRENTS 2 5 4
4.4.5.2 PROTECTIVE DEVICES FOR MALFUNCTIONS IN THE COOLING DEVICE 2 5 5
4.4.5.3 DEVICES THAT RESPOND TO BOTH OVERCURRENT AND COOLING UNIT
MALFUNCTIONS .... 2 5 5 4.4.6 SHORT-CIRCUIT PROTECTION FOR DIODES AND
THYRISTORS 2 5 6
4.4.6.1 SEMICONDUCTOR FUSES: TERMS AND EXPLANATIONS 2 5 7
4.4.6.2 DIMENSIONING SEMICONDUCTOR FUSES 2 6 0
4.5 SERIES AND PARALLEL CONNECTION O F DIODES AND THYRISTORS 2 6 6
4.5.1 PARALLEL CONNECTION O F THYRISTORS 2 6 6
4.5.2 SERIES CONNECTION O F THYRISTORS 2 6 6
4.5.3 PARALLEL CONNECTION O F RECTIFIER DIODES 2 6 6
4.5.4 SERIES CONNECTION O F RECTIFIER DIODES 2 6 6
5 APPLICATION NOTES FOR IGBT AND MOSFET MODULES 267
5.1 SELECTING IGBT AND M O S F E T MODULES 2 6 7
5.1.1 OPERATING VOLTAGE 2 6 7
5.1.1.1 BLOCKING VOLTAGE 2 6 7
5.1.1.2 CO-ORDINATION O F INSULATION 2 7 1
5.1.2 ON-STATE CURRENT 2 7 4
5.1.3 STRESS CONDITIONS O F FREEWHEELING DIODES IN RECTIFIER AND
INVERTER M O D E 2 7 5
5.1.4 SWITCHING FREQUENCY 2 7 7
5.2 THERMAL DIMENSIONING FOR POWER TRANSISTORS 2 7 9
5.2.1 INDIVIDUAL AND TOTAL LOSSES 2 8 0
5.2.1.1 DC/DC CONVERTERS 2 8 1
5.2.1.2 P W M VOLTAGE INVERTER 2 8 3
5.2.2 JUNCTION TEMPERATURE CALCULATION 2 8 5
5.2.2.1 THERMAL EQUIVALENT CIRCUIT DIAGRAMS 2 8 5
5.2.2.2 JUNCTION TEMPERATURE DURING STATIONARY OPERATION (MEAN-VALUE
ANALYSIS).... 2 8 8 5.2.2.3 JUNCTION TEMPERATURE DURING SHORT-TIME
OPERATION 2 8 9
5.2.2.4 JUNCTION TEMPERATURE A F FUNDAMENTAL FREQUENCY 2 9 1
5.2.3 CALCULATION O F POWER DISSIPATION AND TEMPERATURE USING SEMISEL 2
9 3
5.2.3.1 POSSIBLE SOLUTION FOR TEMPERATURE AND POWER DISSIPATION
CALCULATION 2 9 3
5.2.3.2 CIRCUIT SELECTION 2 9 4
5.2.3.3 ELECTRICAL OPERATING CONDITIONS 2 9 4
5.2.3.4 COMPONENT SELECTION 2 9 5
5.2.3.5 THERMAL OPERATING CONDITIONS 2 9 6
5.2.3.6 RESULTS 2 9 8
IV
IMAGE 5
5.3 COOLING POWER MODULES 3 0 0
5.3.1 THERMAL MODEL OF THE COOLING SYSTEM 3 0 0
5.3.2 FACTORS INFLUENCING THERMAL RESISTANCE 301
5.3.2.1 N U M B E R O F HEAT SOURCES 301
5.3.2.2 HEAT SPREADING 302
5.3.2.3 POSITION O F HEAT SOURCES IN RELATION TO DIRECTION O F COOLING
FLOW 303
5.3.2.4 MEASURING POINTS FOR DETERMINING RTH 3 0 3
5.3.3 NATURAL AIR COOLING (FREE CONVECTION) 3 0 4
5.3.4 FORCED AIR COOLING 3 0 4
5.3.4.1 COOLING PROFILES 305
5.3.4.2 PRESSURE DROP AND AIR VOLUME 3 0 6
5.3.4.3 FANS (VENTILATORS, BLOWERS) 3 0 7
5.3.4.4 OPERATING HEIGHT 3 0 8
5.3.5 WATER COOLING 3 0 9
5.3.5.1 PRESSURE DROP AND WATER VOLUME, TEST PRESSURE 311
5.3.5.2 COOLANT, COOLING CYCLE AND CHEMICAL REQUIREMENTS 312
5.3.5.3 MOUNTING DIRECTION AND VENTING 3 1 4
5.3.5.4 OTHER LIQUID COOLING POSSIBILITIES 315
5.3.6 HEATPIPES 3 1 8
5.3.7 THERMAL STACKING 3 1 9
5.3.7.1 DETERMINING AN ADDITIONAL THERMAL IMPEDANCE 3 1 9
5.3.7.2 CALCULATING PRE-HEATING FOR AIR COOLING 3 2 0
5.3.7.3 CALCULATING PRE-HEATING FOR WATER COOLING 321
5.4 POWER DESIGN, PARASITIC ELEMENTS, E M C 3 2 2
5.4.1 PARASITIC INDUCTANCES AND CAPACITANCES 3 2 2
5.4.2 EMI AND MAINS FEEDBACK 3 2 4
5.4.2.1 ENERGY PROCESSES IN CONVERTERS 3 2 4
5.4.2.2 CAUSES O F INTERFERENCE CURRENTS 325
5.4.2.3 PROPAGATION PATHS 327
5.4.2.4 OTHER CAUSES O F ELECTROMAGNETIC INTERFERENCE (EMI) 3 2 9
5.4.2.5 EMI SUPPRESSION MEASURES 3 2 9
5.5 SOLUTIONS 331
5.5.1 DEFINITION O F THE TERM SOLUTIONS 3 3 1
5.5.2 PLATFORMS 331
5.5.2.1 PLATFORMS WITH IGBT STANDARD MODULES 3 3 2
5.5.2.2 SKIIPSTACK PLATFORMS 334
5.5.2.3 EXAMPLES O F PLATFORM SOLUTIONS FOR LINE-COMMUTATED CIRCUITS
USING THYRISTORS OR DIODES 3 3 6
5.5.3 SKAI: SYSTEM ASSEMBLIES FOR VEHICLE APPLICATIONS 3 3 7
5.6 DRIVER 3 3 8
5.6.1 GATE CURRENT AND GATE VOLTAGE CHARACTERISTICS 3 3 8
5.6.2 DRIVER PARAMETERS AND SWITCHING PROPERTIES 3 4 2
5.6.3 DRIVER CIRCUIT STRUCTURES 3 4 5
5.6.4 PROTECTION AND MONITORING FUNCTIONS 3 4 7
5.6.5 TIME CONSTANTS AND INTERLOCK FUNCTIONS 3 4 8
5.6.6 TRANSMISSION O F DRIVER SIGNAL AND DRIVING ENERGY 3 5 0
5.6.6.1 DRIVER CONTROL AND FEEDBACK SIGNALS 351
5.6.6.2 DRIVING ENERGY 3 5 2
5.6.7 MONOLITHIC AND HYBRID DRIVER ICS 3 5 3
5.6.8 SEMIDRIVER 3 5 4
5.7 ERROR BEHAVIOUR AND PROTECTION 3 5 7
5.7.1 TYPES O F FAULTS/ERRORS 3 5 7
5.7.2 BEHAVIOUR IN THE EVENT O F OVERLOAD OR SHORT CIRCUIT 3 6 0
5.7.3 FAULT DETECTION AND PROTECTION 3 6 4
5.7.3.1 DETECTION AND REDUCTION O F FAULT CURRENTS 365
V
IMAGE 6
5.7.3.2 OVERVOLTAGE LIMITATION 3 6 7
5.7.3.3 OVERTEMPERATURE DETECTION 3 7 5
5.8 PARALLEL AND SERIES CONNECTIONS 3 7 5
5.8.1 PARALLEL CONNECTION 3 7 5
5.8.1.1 PROBLEMS INVOLVED WITH CURRENT BALANCING 3 7 5
5.8.1.2 W A Y S OF IMPROVING CURRENT SYMMETRY 3 8 3
5.8.1.3 DERATING 3 8 5
5.8.1.4 SPECIFICS O F PARALLEL CONNECTIONS FOR SKIIP MODULES 3 8 6
5.8.2 SERIES CONNECTION 3 8 7
5.8.2.1 T H E IMPORTANCE O F VOLTAGE SYMMETRY 3 8 8
5.8.2.2 WAYS O F IMPROVING VOLTAGE SYMMETRY 3 8 9
5.8.2.3 CONCLUSIONS 3 9 4
5.9 SOFT SWITCHING AS Z V S OR Z C S / SWITCHING LOSS REDUCTION NETWORKS
(SNUBBERS) 3 9 4 5.9.1 AIMS AND AREAS O F APPLICATION 3 9 4
5.9.2 SWITCHING LOSS REDUCTION NETWORKS / SNUBBER CIRCUITS 3 9 4
5.9.3 SOFT SWITCHING 3 9 6
5.9.3.1 LOAD ON POWER SEMICONDUCTORS 3 9 6
5.9.3.2 SEMICONDUCTOR AND DRIVER REQUIREMENTS 4 0 0
5.9.3.3 SWITCHING PROPERTIES 4 0 2
5.9.3.4 CONCLUSION 4 0 7
6 HANDLING INSTRUCTIONS AND ENVIRONMENTAL CONDITIONS 409
6.1 SENSITIVITY TO ESD AND MEASURES FOR PROTECTION 4 0 9
6.2 AMBIENT CONDITIONS FOR STORAGE, TRANSPORTATION AND OPERATION 4 0 9
6.2.1 CLIMATIC CONDITIONS 411
6.2.2 MECHANICAL ENVIRONMENTAL CONDITIONS 411
6.2.3 BIOLOGICAL ENVIRONMENTAL CONDITIONS 4 1 3
6.2.4 ENVIRONMENTAL IMPACT DUE TO CHEMICALLY ACTIVE SUBSTANCES 4 1 3
6.2.5 ENVIRONMENTAL IMPACT CAUSED BY MECHANICALLY ACTIVE SUBSTANCES 4 1
3
6.2.6 NOTES ON OPERATION AT HIGH ALTITUDES 4 1 4
6.2.7 AIR HUMIDITY LIMITS AND CONDENSATION PROTECTION 4 1 6
6.2.8 RAMIFICATIONS FOR DESIGN PROCESS 4 1 7
6.3 POWER MODULE ASSEMBLY 4 1 9
6.3.1 QUALITY O F THE HEAT SINK MOUNTING SURFACE 4 1 9
6.3.2 THERMAL COUPLING BETWEEN MODULE AND HEAT SINK BY MEANS O F THERMAL
INTERFACE MATERIAL (TIM) 4 2 0
6.3.3 MOUNTING POWER MODULES ONTO HEAT SINK 4 2 5
6.3.4 ELECTRICAL CONNECTIONS 4 2 6
6.4 MOUNTING O F CAPSULE DIODES AND THYRISTORS (DISC CELLS) 4 2 7
7 SOFTWARE TOOL AS A DIMENSIONING AID 431
7.1 SEMISEL 4 3 1
7.1.1 PROGRAM FUNCTIONS 4 3 2
7.1.2 USING SEMISEL 4 3 2
7.2 SEMICONDUCTOR MODELS 4 3 3
7.2.1 STATIC MODELS 4 3 3
7.2.2 STATE MODELS 4 3 4
7.2.3 PHYSICAL MODELS O F SEMICONDUCTOR AND BEHAVIOUR MODELS 4 3 5
REFERENCES : 437
ABBREVIATIONS USED IN SEMIKRON DATASHEETS 442
VI
|
| any_adam_object | 1 |
| author_GND | (DE-588)118178199 |
| building | Verbundindex |
| bvnumber | BV040303270 |
| classification_rvk | ZN 8340 |
| ctrlnum | (OCoLC)794510891 (DE-599)DNB101869319X |
| dewey-full | 621.317 621.38152 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.317 621.38152 |
| dewey-search | 621.317 621.38152 |
| dewey-sort | 3621.317 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV040303270 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T00:21:10Z |
| institution | BVB |
| institution_GND | (DE-588)2173200-0 |
| isbn | 9783938843666 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-025158251 |
| oclc_num | 794510891 |
| open_access_boolean | |
| owner | DE-83 DE-92 |
| owner_facet | DE-83 DE-92 |
| physical | VI, 454 S. Ill., graph. Darst. |
| publishDate | 2011 |
| publishDateSearch | 2011 |
| publishDateSort | 2011 |
| publisher | ISLE-Verl. |
| record_format | marc |
| spelling | Application manual power semiconductors publ. by SEMIKRON International GmbH. Arendt Wintrich ... Ilmenau ISLE-Verl. 2011 VI, 454 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Leistungshalbleiter (DE-588)4167286-0 gnd rswk-swf Leistungshalbleiter (DE-588)4167286-0 s DE-604 Wintrich, Arendt 1965- Sonstige (DE-588)118178199 oth SEMIKRON International GmbH Sonstige (DE-588)2173200-0 oth Parallele Sprachausgabe deutsch Applikationshandbuch Leistungshalbleiter DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025158251&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Application manual power semiconductors Leistungshalbleiter (DE-588)4167286-0 gnd |
| subject_GND | (DE-588)4167286-0 |
| title | Application manual power semiconductors |
| title_auth | Application manual power semiconductors |
| title_exact_search | Application manual power semiconductors |
| title_full | Application manual power semiconductors publ. by SEMIKRON International GmbH. Arendt Wintrich ... |
| title_fullStr | Application manual power semiconductors publ. by SEMIKRON International GmbH. Arendt Wintrich ... |
| title_full_unstemmed | Application manual power semiconductors publ. by SEMIKRON International GmbH. Arendt Wintrich ... |
| title_short | Application manual power semiconductors |
| title_sort | application manual power semiconductors |
| topic | Leistungshalbleiter (DE-588)4167286-0 gnd |
| topic_facet | Leistungshalbleiter |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025158251&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT wintricharendt applicationmanualpowersemiconductors AT semikroninternationalgmbh applicationmanualpowersemiconductors |