Semiconductor spintronics:
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Singapore [u.a.]
World Scientific
2012
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis Klappentext |
| Beschreibung: | XVI, 533 S. graph. Darst. |
| ISBN: | 9789814327909 9814327905 |
Internformat
MARC
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| 007 | t | ||
| 008 | 120605s2012 d||| |||| 00||| eng d | ||
| 020 | |a 9789814327909 |9 978-981-4327-90-9 | ||
| 020 | |a 9814327905 |9 981-4327-90-5 | ||
| 035 | |a (OCoLC)796267126 | ||
| 035 | |a (DE-599)BVBBV040235877 | ||
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| 084 | |a PHY 723f |2 stub | ||
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| 100 | 1 | |a Xia, Jian-Bai |d 1939- |e Verfasser |0 (DE-588)1027485006 |4 aut | |
| 245 | 1 | 0 | |a Semiconductor spintronics |c Jianbai Xia ; Weikun Ge ; Kai Chang |
| 264 | 1 | |a Singapore [u.a.] |b World Scientific |c 2012 | |
| 300 | |a XVI, 533 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 650 | 0 | 7 | |a Spintronik |0 (DE-588)7755384-6 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Spintronik |0 (DE-588)7755384-6 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Ge, Weikun |e Verfasser |0 (DE-588)1027485839 |4 aut | |
| 700 | 1 | |a Chang, Kai |d 1948- |e Verfasser |0 (DE-588)172018269 |4 aut | |
| 856 | 4 | 2 | |m Digitalisierung UB Bayreuth |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025092184&sequence=000003&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 856 | 4 | 2 | |m Digitalisierung UB Bayreuth |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025092184&sequence=000004&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA |3 Klappentext |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-025092184 | ||
Datensatz im Suchindex
| _version_ | 1804149225460596736 |
|---|---|
| adam_text | CONTENTS
Preface v
List of Acronyms
xv
Introduction
1
0.1
Origin of Spintronics
—
GMR Effect Device
....... 2
0.2
New Materials for Spintronics Applications
........ 3
0.3
Spin Injection and Spin Transport of Electrons
...... 5
0.4
Optical Modulation of Spin Coherence
in Semiconductors and Nanostructures
.......... 7
0.5
Spin Electronic Devices
................... 10
References
.............................. 12
1.
Properties of Magnetic Ions in Semiconductors
14
1.1
Electron Configuration of Magnetic Ions
......... 14
1.2
Splitting of the Basis State of Free Ions
in the Crystal Field
..................... 17
1.3
Crystal Field Theory
.................... 19
1.4
Wave Functions of Many-electron States
......... 22
1.5
Equivalent Operator Method
................ 25
1.6
Magnetic Ion Energy Levels in Semiconductors
...... 27
1.7
Experimental Study of the Properties of Magnetic
Ions in Semiconductors
................... 33
References
.............................. 38
2.
Properties of DMSs
40
2.1
Effective-mass Theory of Semiconductors
in the Magnetic Field
.................... 42
2.2
DMSs of a Wide Band Gap
................. 43
2.2.1
Magnetic energy levels of wide
bandgap
semiconductors
.................... 43
CONTENTS
Preface v
List of Acronyms
xv
Introduction
1
0.1
Origin of Spintronics
—
GMR Effect Device
....... 2
0.2
New Materials for Spintronics Applications
........ 3
0.3
Spin Injection and Spin Transport of Electrons
...... 5
0.4
Optical Modulation of Spin Coherence
in Semiconductors and Nanostructures
.......... 7
0.5
Spin Electronic Devices
................... 10
References
.............................. 12
1.
Properties of Magnetic Ions in Semiconductors
14
1.1
Electron Configuration of Magnetic Ions
......... 14
1.2
Splitting of the Basis State of Free Ions
in the Crystal Field
..................... 17
1.3
Crystal Field Theory
.................... 19
1.4
Wave Functions of Many-electron States
......... 22
1.5
Equivalent Operator Method
................ 25
1.6
Magnetic Ion Energy Levels in Semiconductors
...... 27
1.7
Experimental Study of the Properties of Magnetic
Ions in Semiconductors
................... 33
References
.............................. 38
2.
Properties of DMSs
40
2.1
Effective-mass Theory of Semiconductors
in the Magnetic Field
.................... 42
2.2
DMSs of a Wide Band Gap
................. 43
2.2.1
Magnetic energy levels of wide
bandgap
semiconductors
.................... 43
viii
Semiconductor Spintronics
2.2.2
Magnetic
interaction in DMSs
........... 50
2.2.3
DMSs of the wurtzite structure
........... 55
2.2.4
Experimental observations
............. 57
2.3
Narrow
Bandgap
DMSs
................... 66
2.3.1
Magnetic energy levels of narrow
bandgap
semiconductors
.................... 66
2.3.2
Magnetic optical spectra of Hgi-zMn^Te
..... 70
2.4
Microstructures
of DMSs
.................. 73
2.4.1
DMS superlattices (Faraday configuration)
.... 73
2.4.2
DMS superlattice
(Voigt
configuration)
...... 78
2.4.3
DMS quantum dots
................. 84
2.4.4
MP effect
....................... 91
2.4.5
DMS quantum wires
................. 97
2.5
Transport Properties of DMSs
............... 101
2.6
Fe2+ Ion-doped DMSs
—
Van Vleck Paramagnetism
. . . 105
2.7
Giant Faraday Rotation and KR
.............. 107
2.7.1
Magneto-optical property of magnetic
semiconductors
.................... 107
2.7.2
TRFR and TRKR in magnetic semiconductors
. . 112
2.8
Light-Induced Magnetization
................ 114
References
.............................. 119
3.
Ferromagnetic Semiconductors
122
3.1
FMS Gai-xMn^As
..................... 123
3.2
Other FMSs
......................... 131
3.3
Fermi-level Engineering
................... 139
3.4
Influence of Clusters on Ferromagnetism
......... 143
3.5
QDs of FMSs
......................... 146
3.6
Mean-field Theory of FMSs
................. 150
3.6.1
Microscopic theory of ferromagnetism
....... 150
3.6.2
Magnetic interaction in DMSs
........... 155
3.6.3
FMS quantum wires and quantum slabs
...... 163
3.6.4
Ferromagnetic semiconductor QDs
......... 169
3.7
First-principle Calculation of FMSs
............ 172
3.7.1
Simple model of the electronic structure
of
3d
impurities in GaAs
.............. 173
3.7.2
Practical rules for ferromagnetism of
3d
impurities in semiconductors
............ 176
Contents ix
3.8
Magnetic
Polaron
(MP)
—
A New Mechanism of
Ferromagnetism
....................... 180
References
.............................. 185
4.
Injection of Spin-polarized Electrons
187
4.1
Spin Lifetime and Drift of Electrons
in Semiconductors
...................... 187
4.2
Rashba Effect
........................ 198
4.2.1
Origin of the Rashba effect
............. 198
4.2.2
Experimental measurement of the Rashba
coefficient
....................... 201
4.2.3
Theoretical calculation of the Rashba
coefficient
....................... 206
4.3
Semiconductor Spin Transistor and Quantum
Waveguide Theory
...................... 210
4.3.1
Spin-polarized tunneling transistor
......... 210
4.3.2
Semiconductor spin transistor
............ 213
4.4
Quantum Waveguide Theory of Rashba Electrons
.... 217
4.4.1
ID quantum waveguide theory of Rashba
electrons
....................... 218
4.4.2
Transport in closed ID loops
............ 223
4.4.3
Eigenstates in closed loops
............. 225
4.5
Production and Transport of Spin-polarized Current
. . . 227
4.5.1
Coherent transport of spin-polarized electrons
through an interface of heterostructure
...... 227
4.5.2
Injection of spin-polarized electrons
(experiment)
..................... 234
4.5.3
Injection of spin-polarized electrons (theory)
... 241
4.6
Magnetic Semiconductor Tunneling Junction
....... 251
4.6.1
Property of GaAs/GaMnAs heterostructures
. . . 251
4.6.2
FM/NM/FM trilayer
................ 252
4.6.3
Hybridized structure of ferromagnetic metals
and semiconductors
................. 257
References
.............................. 262
5.
Spin Relaxation 264
5.1
SRTs
її
and T2
....................... 264
5.2
Elliot-Yafet Relaxation Mechanism
............ 265
χ
Semiconductor Spintronics
5.3
Dyakonov-Perel
Relaxation
Mechanism
.......... 272
5.4
Bir-Aronov-Pikus Mechanism
............... 277
5.5
Experimental Studies of Spin Relaxation
in
ПІ
-V
Compounds
..................... 279
5.5.1
Optical orientation method
............. 279
5.5.2
Spin relaxation in InSb (EY mechanism)
..... 283
5.5.3
Spin relaxation in GaAs (DP mechanism)
..... 284
5.5.4
Spin relaxation in GaAs (BAP mechanism)
.... 285
5.5.5
Dependence of spin relaxation rate
on acceptor concentration
.............. 289
5.6
Spin Relaxation in Quantum Wells
............. 290
5.7
Electron Spin Relaxation Studied by a Kinetic
Spin Bloch Equation
..................... 298
5.7.1
Kinetic spin Bloch equation
............. 298
5.7.2
Comparison of different spin relaxation
mechanisms
...................... 299
5.7.3
DP spin relaxation in
η
-type
GaAs
......... 300
5.7.4
Spin relaxation in intrinsic GaAs
.......... 302
5.7.5
Electron spin relaxation in p-type GaAs
...... 304
References
.............................. 306
6.
Rashba and Dresselhaus Effects
307
6.1
Spin Splitting Induced by Spin-Orbit Interaction (SOI)
in Inversion Asymmetrical Semiconductors
—
Rashba
and Dresselhaus Effects
................... 307
6.1.1
Effective mass approximation
............ 307
6.1.2
General description of the Dresselhaus effect
. . . 315
6.1.3
Relativistic quantum mechanical understanding
. . 318
6.2
The SOI Hamiltonian in a Rashba System
........ 326
6.3
The Rashba Effect and Dispersion
............. 328
6.4
Rashba Parameter a
..................... 330
6.4.1
The kp equation
.................. 331
6.4.2
The
к
■
ρ
treatment of SOI
............. 333
6.4.3
The eight bands model
............... 333
6.4.4
The five bands model
................ 336
6.5
Deriving the Rashba Coefficient a from the SdH
Oscillation
.......................... 339
Contents xj
6.6
Spin-related Scattering and Spin Current
......... 343
6.6.1
Scattering related to spin
.............. 345
6.6.2
Spin current and magnetocurrent
.......... 346
References
.............................. 353
7.
Optical Responses of Electron Spins in Semiconductors
354
7.1
Spin of Photon or Polarization of Light
.......... 355
7.2
Spin Conservation in Optical Transitions
in Semiconductors
...................... 356
7.2.1
Selection rules of optical transitions
........ 356
7.2.2
Optical excitation for spin-split bands
....... 358
7.3
Spin Photocurrent Induced by Optically Injected
Electron Spin in a Spin Splitting System
......... 363
7.3.1
Circular photogalvanic effect
............ 363
7.3.2
Anomalous CPGE
.................. 369
7.3.3
Spin galvanic effect (SGE)
............. 372
7.3.4
Linear photogalvanic effect
............. 373
7.4
Electric Field-induced Electron Spin Polarization
in a Spin-Split System
.................... 375
7.5
The Experimental Distinction and Applications
of the Rashba and Dresselhaus Effects
........... 378
7.6
Spin Electronic and Opto-electronic Devices
....... 383
7.6.1
Spin
FET
based on combined Rashba
and Dresselhaus effects
............... 383
7.6.2
Spin light resources
—
LED and laser
....... 387
7.6.3
Detecting spin current by electric current
..... 398
References
.............................. 404
8.
Manipulation of Spin Coherent Electrons
406
8.1
Experimental Methods
................... 406
8.2
Electron Spin Coherence in Semiconductor
Bulk Materials
........................ 411
8.3
Electron Spin Coherence in Semiconductor QDs
..... 413
8.4
Spatial Movement of Spin Coherent Electrons
in Semiconductors
...................... 419
8.4.1
Spatial movement of coherent spin in compound
semiconductors
.................... 419
8.4.2
Current-induced spin polarization
......... 422
xii
Semiconductor Spintronics
8.5
Spin Hall Effect.......................
425
8.5.1
Optical observation of the spin Hall effect
..... 425
8.5.2
Spin Hall effect in 2DEGs
.............. 432
8.6
Generation of Spin Current
................. 434
8.6.1
Spin current generated by the spin Hall effect
. . . 435
8.6.2
Spin current generated by a two-color light
field
.......................... 437
8.7
Spin Dynamics in Semiconductors
............. 443
8.7.1
Mobility and diffusion coefficient of spin
current
........................ 444
8.7.2
Effect of electric field on spin-polarized current
. . 448
8.8
Coherent Manipulation of a Single Spin
in Semiconductors
...................... 451
8.8.1
Single-spin rotations
................. 452
8.8.2
Quantum control of a single QD spin using
ultrafast optical pulses
................ 454
8.9
Spin Polarization and Transport in Silicon
........ 458
8.9.1
Measurement and control of spin transport
in silicon
....................... 458
8.9.2
Electrical injection of spin polarization
in silicon at RT
.................... 462
References
.............................. 465
9.
Spin-Polarized Electron and Domain Wall Transport
467
9.1
Spin Transport in Magnetic Semiconductor 2DEG
.... 467
9.2
Spin Transport Through QDs
............... 476
9.2.1
Spin transport through the double barrier
tunneling junctions with ferromagnetic leads
. . . 476
9.2.2
The Kondo effect in semiconductor QDs
with ferromagnetic leads
............... 480
9.2.3
Theory of spin transport through magnetic
semiconductor QDs
................. 485
9.3
Magnetic Domain Transport in Magnetic
Semiconductors
....................... 488
References
.............................. 494
Contents xiii
10.
Future
Quantum
Dot and Quantum Wire Spintronics
497
10.1
Electron Structure and g-Factor of QDs
.......... 499
10.2
Electron Structure and g-Factor of Quantum Wires
. . . 510
10.3
Electric Field Tunable p-Factor in QDs
.......... 515
10.4
Influence of
N
Doping on the Rashba Coefficient
and the ^-Factor of Electrons
................ 518
References
.............................. 521
Index
523
SEMICONDUCTOR
SPINTRONICS
Semiconductor
Spintronics, as an
emerging research
discipline
andan
important
advanced field in physics, has developed quickly
and obtained fruitful results in recent decades. This volume is the
first monograph summarizing the physical foundation and the
experimental results obtained in this field. With the culmination
of the authors extensive working experiences, this book
presents the developing history of semiconductor spintronics,
its basic concepts and theories, experimental results, and the
prospected future development. This unique book intends to
provide a systematic and modern foundation for semiconductor
spintronics aimed at researchers, professors, post-doctorates,
and graduate students, and to help them master the overall
knowledge of spintronics.
World Scientific
www.worldscientific.com
7981
he
|
| any_adam_object | 1 |
| author | Xia, Jian-Bai 1939- Ge, Weikun Chang, Kai 1948- |
| author_GND | (DE-588)1027485006 (DE-588)1027485839 (DE-588)172018269 |
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| id | DE-604.BV040235877 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T00:19:39Z |
| institution | BVB |
| isbn | 9789814327909 9814327905 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-025092184 |
| oclc_num | 796267126 |
| open_access_boolean | |
| owner | DE-20 DE-355 DE-BY-UBR DE-703 DE-19 DE-BY-UBM DE-91G DE-BY-TUM DE-M347 DE-11 DE-83 |
| owner_facet | DE-20 DE-355 DE-BY-UBR DE-703 DE-19 DE-BY-UBM DE-91G DE-BY-TUM DE-M347 DE-11 DE-83 |
| physical | XVI, 533 S. graph. Darst. |
| publishDate | 2012 |
| publishDateSearch | 2012 |
| publishDateSort | 2012 |
| publisher | World Scientific |
| record_format | marc |
| spelling | Xia, Jian-Bai 1939- Verfasser (DE-588)1027485006 aut Semiconductor spintronics Jianbai Xia ; Weikun Ge ; Kai Chang Singapore [u.a.] World Scientific 2012 XVI, 533 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Spintronik (DE-588)7755384-6 gnd rswk-swf Spintronik (DE-588)7755384-6 s DE-604 Ge, Weikun Verfasser (DE-588)1027485839 aut Chang, Kai 1948- Verfasser (DE-588)172018269 aut Digitalisierung UB Bayreuth application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025092184&sequence=000003&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis Digitalisierung UB Bayreuth application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025092184&sequence=000004&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA Klappentext |
| spellingShingle | Xia, Jian-Bai 1939- Ge, Weikun Chang, Kai 1948- Semiconductor spintronics Spintronik (DE-588)7755384-6 gnd |
| subject_GND | (DE-588)7755384-6 |
| title | Semiconductor spintronics |
| title_auth | Semiconductor spintronics |
| title_exact_search | Semiconductor spintronics |
| title_full | Semiconductor spintronics Jianbai Xia ; Weikun Ge ; Kai Chang |
| title_fullStr | Semiconductor spintronics Jianbai Xia ; Weikun Ge ; Kai Chang |
| title_full_unstemmed | Semiconductor spintronics Jianbai Xia ; Weikun Ge ; Kai Chang |
| title_short | Semiconductor spintronics |
| title_sort | semiconductor spintronics |
| topic | Spintronik (DE-588)7755384-6 gnd |
| topic_facet | Spintronik |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025092184&sequence=000003&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025092184&sequence=000004&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT xiajianbai semiconductorspintronics AT geweikun semiconductorspintronics AT changkai semiconductorspintronics |