GaN transistors for efficient power conversion: the eGaN FET journey continues
Gespeichert in:
1. Verfasser: | |
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Format: | Buch |
Sprache: | English |
Veröffentlicht: |
El Segundo, CA
Power Conversion Publ.
c2012
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Ausgabe: | 1. ed. |
Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis |
Beschreibung: | x, 208 S. Ill., graph. Darst. 23 cm |
ISBN: | 9780615569253 0615569250 |
Internformat
MARC
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250 | |a 1. ed. | ||
264 | 1 | |a El Segundo, CA |b Power Conversion Publ. |c c2012 | |
300 | |a x, 208 S. |b Ill., graph. Darst. |c 23 cm | ||
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650 | 4 | |a Gallium nitride | |
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Datensatz im Suchindex
_version_ | 1804149222308577280 |
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adam_text | GAN TRANSISTORS FOR EFFICIENT POWER CONVERSION
/ LIDOW, ALEX
: C2012
TABLE OF CONTENTS / INHALTSVERZEICHNIS
INCLUDES BIBLIOGRAPHICAL REFERENCES AND INDEX.
DIESES SCHRIFTSTUECK WURDE MASCHINELL ERZEUGT.
|
any_adam_object | 1 |
author | Lidow, Alex 1954- |
author_GND | (DE-588)1147160171 |
author_facet | Lidow, Alex 1954- |
author_role | aut |
author_sort | Lidow, Alex 1954- |
author_variant | a l al |
building | Verbundindex |
bvnumber | BV040233693 |
callnumber-first | T - Technology |
callnumber-label | TK7871 |
callnumber-raw | TK7871.95 |
callnumber-search | TK7871.95 |
callnumber-sort | TK 47871.95 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
classification_rvk | ZN 4870 |
ctrlnum | (OCoLC)796264860 (DE-599)BVBBV040233693 |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
edition | 1. ed. |
format | Book |
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id | DE-604.BV040233693 |
illustrated | Illustrated |
indexdate | 2024-07-10T00:19:36Z |
institution | BVB |
isbn | 9780615569253 0615569250 |
language | English |
lccn | 2011944839 |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-025090051 |
oclc_num | 796264860 |
open_access_boolean | |
owner | DE-29T DE-703 |
owner_facet | DE-29T DE-703 |
physical | x, 208 S. Ill., graph. Darst. 23 cm |
publishDate | 2012 |
publishDateSearch | 2012 |
publishDateSort | 2012 |
publisher | Power Conversion Publ. |
record_format | marc |
spelling | Lidow, Alex 1954- Verfasser (DE-588)1147160171 aut GaN transistors for efficient power conversion the eGaN FET journey continues Alex Lidow ... [et al.] 1. ed. El Segundo, CA Power Conversion Publ. c2012 x, 208 S. Ill., graph. Darst. 23 cm txt rdacontent n rdamedia nc rdacarrier Field-effect transistors Gallium nitride Power electronics Effizienz (DE-588)4013585-8 gnd rswk-swf Energieumwandlung (DE-588)4014730-7 gnd rswk-swf HEMT (DE-588)4211873-6 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Energieumwandlung (DE-588)4014730-7 s Effizienz (DE-588)4013585-8 s DE-604 HEMT (DE-588)4211873-6 s Galliumnitrid (DE-588)4375592-6 s LoC Fremddatenuebernahme application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025090051&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
spellingShingle | Lidow, Alex 1954- GaN transistors for efficient power conversion the eGaN FET journey continues Field-effect transistors Gallium nitride Power electronics Effizienz (DE-588)4013585-8 gnd Energieumwandlung (DE-588)4014730-7 gnd HEMT (DE-588)4211873-6 gnd Galliumnitrid (DE-588)4375592-6 gnd |
subject_GND | (DE-588)4013585-8 (DE-588)4014730-7 (DE-588)4211873-6 (DE-588)4375592-6 |
title | GaN transistors for efficient power conversion the eGaN FET journey continues |
title_auth | GaN transistors for efficient power conversion the eGaN FET journey continues |
title_exact_search | GaN transistors for efficient power conversion the eGaN FET journey continues |
title_full | GaN transistors for efficient power conversion the eGaN FET journey continues Alex Lidow ... [et al.] |
title_fullStr | GaN transistors for efficient power conversion the eGaN FET journey continues Alex Lidow ... [et al.] |
title_full_unstemmed | GaN transistors for efficient power conversion the eGaN FET journey continues Alex Lidow ... [et al.] |
title_short | GaN transistors for efficient power conversion |
title_sort | gan transistors for efficient power conversion the egan fet journey continues |
title_sub | the eGaN FET journey continues |
topic | Field-effect transistors Gallium nitride Power electronics Effizienz (DE-588)4013585-8 gnd Energieumwandlung (DE-588)4014730-7 gnd HEMT (DE-588)4211873-6 gnd Galliumnitrid (DE-588)4375592-6 gnd |
topic_facet | Field-effect transistors Gallium nitride Power electronics Effizienz Energieumwandlung HEMT Galliumnitrid |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025090051&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
work_keys_str_mv | AT lidowalex gantransistorsforefficientpowerconversiontheeganfetjourneycontinues |