Semiconductor research: experimental techniques
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2012
|
| Schriftenreihe: | Springer series in materials science
150 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XIX, 372 S. Ill., graph. Darst. |
| ISBN: | 9783642233500 |
Internformat
MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV040132455 | ||
| 003 | DE-604 | ||
| 005 | 20120827 | ||
| 007 | t | ||
| 008 | 120514s2012 ad|| |||| 00||| eng d | ||
| 020 | |a 9783642233500 |9 978-3-642-23350-0 | ||
| 035 | |a (OCoLC)794220613 | ||
| 035 | |a (DE-599)BVBBV040132455 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-11 |a DE-703 |a DE-20 |a DE-19 |a DE-83 | ||
| 082 | 0 | |a 541.377072 | |
| 084 | |a UP 2800 |0 (DE-625)146366: |2 rvk | ||
| 084 | |a UP 9000 |0 (DE-625)146451: |2 rvk | ||
| 084 | |a UQ 1100 |0 (DE-625)146473: |2 rvk | ||
| 245 | 1 | 0 | |a Semiconductor research |b experimental techniques |c Amalia Patanè ...(Eds.) |
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 2012 | |
| 300 | |a XIX, 372 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Springer series in materials science |v 150 | |
| 650 | 0 | 7 | |a Halbleiterphysik |0 (DE-588)4113829-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Physikalische Eigenschaft |0 (DE-588)4134738-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleiterphysik |0 (DE-588)4113829-6 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 1 | 1 | |a Physikalische Eigenschaft |0 (DE-588)4134738-9 |D s |
| 689 | 1 | |5 DE-604 | |
| 700 | 1 | |a Patanè, Amalia |4 edt | |
| 776 | 0 | 8 | |i Erscheint auch als |n Online-Ausgabe |z 978-3-642-23351-7 |
| 830 | 0 | |a Springer series in materials science |v 150 |w (DE-604)BV000683335 |9 150 | |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024989584&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-024989584 | ||
Datensatz im Suchindex
| _version_ | 1804149097821634560 |
|---|---|
| adam_text | IMAGE 1
CONTENTS
1 SURFACE STUDIES BY LOW-ENERGY ELECTRON DIFFRACTION AND REFLECTION
HIGH-ENERGY-ELECTRON DIFFRACTION 1
P. LAUKKANEN, J. SADOWSKI, AND M. GUINA 1.1 BASICS OF RHEED AND LEED 1
1.2 ANALYSIS OF LEED AND RHEED PATTERNS 4
1.3 USING LEED TO STUDY III-V SURFACES 8
1.3.1 THE C(8 X 2) SURFACES OF INAS(LOO) AND INSB(LOO) 8
1.3.2 THE GAAS(LOO) RECONSTRUCTIONS 9
1.3.3 THE BI-INDUCED RECONSTRUCTIONS ON III-V (100) 11
1.4 USING RHEED TO STUDY III-VS 12
1.4.1 OPTIMIZING THE GROWTH CONDITIONS OF GAAS/ALAS HETEROSTRUCTURES 12
1.4.2 THE GAAS( 100) RECONSTRUCTIONS 13
1.4.3 THE GAAS(L 11) RECONSTRUCTIONS 14
1.4.4 PROBING SURFACE RECONSTRUCTIONS IN GALNASN(LOO) 15
1.4.5 IN-SITU CALIBRATIONS OF GROWTH RATE AND COMPOSITION OF MULTINARY
COMPOUNDS 15
1.5 CONCLUDING REMARKS 18
REFERENCES ~ 19
2 HIGH-RESOLUTION ELECTRON MICROSCOPY O F SEMICONDUCTOR HETEROSTRUCTURES
AND NANOSTRUCTURES 23
DAVID L. SALES, ANA M. BELTRAN, JUAN G. LOZANO, JOSE M. MANUEL, M. PAZ
GUERRERO-LEBRERO, TERESA BEN, MIRIAM HERRERA, FRANCISCO M. MORALES,
JOAQUIN PIZARRO, ANA M. SANCHEZ, PEDRO L. GALINDO, DAVID GONZALEZ,
RAFAEL
GARCIA, AND SERGIO I. MOLINA 2.1 INTRODUCTION 23
IX
HTTP://D-NB.INFO/1013760794
IMAGE 2
X C O N T E N T S
2.1.1 TRANSMISSION ELECTRON MICROSCOPY,
A POWERFUL TOOL FOR SEMICONDUCTOR RESEARCH 24
2.2 COMPOSITIONAL QUANTIFICATION COLUMN-TO-COLUMN IN III-V
SEMICONDUCTORS 27
2.2.1 REFERENCE SAMPLES STUDY 28
2.2.2 IMAGE ANALYSIS AND COMPARATIVE INDEX 2 9
2.2.3 SIMULATION O F INTEGRATED INTENSITIES 31
2.3 STRAIN MEASUREMENTS FROM HIGH-RESOLUTION ELECTRON MICROSCOPY IMAGES
32
2.3.1 TECHNIQUES 32
2.3.2 METHODOLOGY 33
2.3.3 APPLICATIONS 36
2.4 RESULTS ON ILL-SB HETERO- AND NANOSTRUCTURES 36
2.5 RESULTS ON INAS QUANTUM WIRES 4 0
2.5.1 NUCLEATION AND INITIAL GROWTH STAGES O F INAS/INP(001) QWRS 4 0
2.5.2 SIMULATED AND EXPERIMENTAL DETERMINATION O F STRAIN MAP AND
PREDICTION OF NUCLEATION SITES FOR THE GROWTH O F THE STACKED STRUCTURES
4 2
2.6 ANALYSIS OF THE N DISTRIBUTION IN GAASN :.. 44
2.7 REVIEW ON INN NANOSTRUCTURES 4 8
2.8 CRYSTALLINE, COMPOSITIONAL, AND STRAIN TEM ASSESSMENTS OF
HIGH-QUALITY EPILAYERS OF TERNARY AND QUATERNARY III-N ALLOYS 51
2.8.1 PREVIOUS CONSIDERATIONS 52
2.8.2 BRIEFLY, A COMPLETE (S)TEM STUDY 53
2.8.3 ANALYSES O F LATERAL STRAINS 5 6
REFERENCES 58
3 HOT ELECTRON ENERGY AND MOMENTUM RELAXATION 63
NACI BALKAN 3.1 INTRODUCTION 6 3
3.2 HOT ELECTRON PHOTOLUMINESCENCE IN THE STEADY STATE 65
3.3 MOBILITY MAPPING 69
3.4 NONEQUILIBRIUM PHONONS (HOT PHONONS) 70
3.5 - COOLING O F HOT ELECTRON HOLE PLASMA BY L O PHONON EMISSION USING
THE CW AND TRANSIENT PHOTOLUMINESCENCE SPECTROSCOPY 7 3
3.5.1 OPTICAL HEATING IN THE STEADY STATE USING C W PHOTOLUMINESCENCE 74
3.5.2 TIME-RESOLVED PL MEASUREMENTS 75
3.6 HOT ELECTRON MOMENTUM RELAXATION 78
3.6.1 EXPERIMENTAL TECHNIQUES 79
3.6.2 THEORETICAL MODELING O F EXPERIMENTAL RESULTS 81
IMAGE 3
CONTENTS X I
3.7 HOT ELECTRON ENERGY RELAXATION VIA ACOUSTIC
PHONON EMISSION 83
3.7.1 EXPERIMENTAL PROCEDURES 85
3.7.2 THEORETICAL MODELING OF EXPERIMENTAL RESULTS 89
3.8 CONCLUSIONS 91
REFERENCES 92
4 OPTICAL MODULATION SPECTROSCOPY 95
ROBERT KUDRAWIEC AND JAN MISIEWICZ 4.1 PRINCIPLES O F OPTICAL MODULATION
SPECTROSCOPY 95
4.1.1 BUILT-IN ELECTRIC FIELD IN SEMICONDUCTOR STRUCTURES AND ITS
MODULATION 97
4.1.2 EXPERIMENTAL SETUP FOR PHOTO- AND CONTACTLESS ELECTRO-REFLECTANCE
98
4.1.3 ANALYSIS O F PHOTO- AND ELECTRO-REFLECTANCE SPECTRA 104 4.2
APPLICATIONS O F PHOTO-AND CONTACTLESS ELECTRO-REFLECTANCE 109 4.2.1
BULK-LIKE EPILAYERS 110
4.2.2 QUANTUM WELLS 115
4.2.3 QUANTUM DOTS 117
4.2.4 DEVICE STRUCTURES 120
REFERENCES 123
5 PHOTOLUMINESCENCE: A TOOL FOR INVESTIGATING OPTICAL, ELECTRONIC, AND
STRUCTURAL PROPERTIES O F SEMICONDUCTORS 125
G. PETTINARI, A. POLIMENI, AND M. CAPIZZI 5.1 INTRODUCTION 125
5.2 GENERALITIES 126
5.2.1 EXPERIMENTAL APPARATUS 126
5.2.2 ABSORPTION SPECTROSCOPY 128
5.2.3 PHOTOLUMINESCENCE SPECTROSCOPY 130
5.2.4 PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY 133
5.3 PHOTOLUMINESCENCE SPECTROSCOPY: A TOOL FOR CRYSTALLINE DISORDER
INVESTIGATION 136
5.3.1 PROBING QUANTUM WELL IMPERFECTIONS 136
5.3.2 LOCALIZED STATES IN AN ALLOY 138
5.3.3 LOCALIZED STATES AND CARRIER THERMALIZATION 140
.5.3.4 DEGENERATE SEMICONDUCTORS 142
5.4 MAGNETO-PHOTOLUMINESCENCE 146
5.4.1 EXCITONS IN A MAGNETIC FIELD 147
5.4.2 HIGH MAGNETIC FIELD LIMIT 149
5.4.3 LOW MAGNETIC FIELD LIMIT 159
5.4.4 INTERMEDIATE MAGNETIC FIELD LIMIT 162
5.5 CONCLUSIONS 166
REFERENCES 167
IMAGE 4
XII C O N T E N T S
6 PRESSURE STUDIES 171
ANDREW PRINS, ALF ADAMS AND STEPHEN SWEENEY 6.1 INTRODUCTION 171
6.2 THE EFFECT OF PRESSURE ON ELECTRONIC BAND STRUCTURE 172
6.2.1 THE GUNN EFFECT 173
6.2.2 ANVIL CELLS AND OPTICAL WORK 175
6.2.3 TRANSPORT PROPERTIES 177
6.2.4 DEFECTS UNDER PRESSURE 179
6.2.5 BAND ANTICROSSING 180
6.3 PHASE TRANSITIONS IN BULK, SUPERLATTICES AND NANOPARTICLES 180
6.4 OPTOELECTRONIC DEVICE MEASUREMENTS UNDER PRESSURE 183
6.4.1 SEMICONDUCTOR LASERS 185
6.4.2 QUANTUM CASCADE LASERS 188
6.4.3 AVALANCHE PHOTODIODES 190
6.5 COMMERCIAL EQUIPMENT AND APPLICATIONS 191
REFERENCES 192
7 SPATIALLY RESOLVED LUMINESCENCE SPECTROSCOPY 197
GINTAUTAS TAMULAITIS 7.1 INTRODUCTION 197
7.2 MICRO-PHOTOLUMINESCENCE (|I-PL) 199
7.3 SCANNING CONFOCAL MICROSCOPY (SCM) 200
7.4 SCANNING NEAR-FIELD OPTICAL MICROSCOPY 204
7.5 CATHODOLUMINESCENCE 212
7.6 EXCITATION O F LUMINESCENCE IN SEMICONDUCTORS 215
7.7 COMPARISON O F TECHNIQUES FOR SPATIALLY RESOLVED SPECTROSCOPY O F
SEMICONDUCTORS 218
7.7.1 MICRO-PHOTOLUMINESCENCE (P,-PL) 218
7.7.2 SCANNING CONFOCAL MICROSCOPY 218
7.7.3 SCANNING NEAR-FIELD OPTICAL MICROSCOPY 219
7.7.4 CATHODOLUMINESCENCE 219
REFERENCES 219
8 TIME-RESOLVED OPTICAL SPECTROSCOPY 223
ANDREA BALOCCHI, THIERRY AMAND, AND XAVIER MARIE 8.1 INTRODUCTION 223
8.2 STREAK CAMERAS FOR TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY 225
8.2.1 WORKING PRINCIPLE 225
8.2.2 SYNCHRONIZATION AND SWEEP METHODS 226
8.2.3 MEASUREMENT METHODS 228
8.2.4 PHOTOCATHODE TYPE AND SENSITIVITY 229
8.2.5 TIME RESOLUTION 229
8.2.6 APPLICATION EXAMPLES 230
IMAGE 5
CONTENTS X I I I
8.3 UP-CONVERSION TECHNIQUE FOR TIME-RESOLVED
PHOTOLUMINESCENCE SPECTROSCOPY 230
8.3.1 PHASE-MATCHING AND POLARIZATION CONDITIONS 232
8.3.2 TWO-COLOR UP-CONVERSION 234
8.3.3 QUANTUM EFFICIENCY 236
8.3.4 SPECTRAL RESOLUTION 237
8.3.5 TIME RESOLUTION 237
8.3.6 ACCEPTANCE ANGLE 238
8.3.7 CALIBRATION PROCEDURES 238
8.3.8 STREAK CAMERA AND UP-CONVERSION: A COMPARISON 238
8.3.9 APPLICATION EXAMPLES 239
8.4 PUMP AND PROBE TIME-RESOLVED SPECTROSCOPIES 240
8.4.1 PROBE CHARACTERISTICS AND DETECTION TECHNIQUES 243
8.4.2 TIME-RESOLVED DIFFERENTIAL ABSORPTION AND DICHROISM EXPERIMENTS
245
8.4.3 FARADAY AND KERR ROTATION SPECTROSCOPY 248
8.5 TIME-CORRELATED SINGLE-PHOTON SPECTROSCOPY 251
8.5.1 TCSPC SETUP AND ELECTRONICS COMPONENTS 252
8.5.2 TCSPC TEMPORAL RESOLUTION AND SENSITIVITY 254
8.5.3 APPLICATION EXAMPLES 255
8.6 TIME-RESOLVED OPTICAL SPECTROSCOPY: A SYNOPTIC COMPARISON OF THE
DIFFERENT TECHNIQUES 256
REFERENCES 256
9 RAMAN SPECTROSCOPY OF COMPOUND SEMICONDUCTORS 259
JORDI IBANEZ AND RAMON CUSCO 9.1 INTRODUCTION 259
9.2 RAMAN SCATTERING BY PHONONS 260
9.2.1 THE RAMAN EFFECT 260
9.2.2 MACROSCOPIC THEORY AND SELECTION RULES 262
9.2.3 RESONANT RAMAN SCATTERING 265
9.3 RAMAN INSTRUMENTATION 266
9.4 APPLICATIONS O F RAMAN SPECTROSCOPY IN SEMICONDUCTOR PHYSICS 268
9.4.1 CRYSTAL QUALITY AND STRAIN STATE 269
9.4.2 IMPURITIES AND ALLOYS 271
9.4.3 RAMAN SCATTERING BY L O PHONON-PLASMON COUPLED MODES 275
REFERENCES 279
10 CYCLOTRON RESONANCE SPECTROSCOPY 283
OLEKSIY DRACHENKO AND MANFRED HELM 10.1 INTRODUCTION 283
10.2 BASIC THEORY 284
10.2.1 CLASSICAL DESCRIPTION 284
IMAGE 6
X I V
C O N T E N T S
10.2.2 QUANTUM MECHANICAL DESCRIPTION 286
10.2.3 FURTHER CONSIDERATIONS 288
10.3 EXPERIMENTAL TECHNIQUES 289
10.3.1 HIGH MAGNETIC FIELDS 289
10.3.2 CYCLOTRON RESONANCE SPECTROSCOPIC TECHNIQUES 291 10.4 CYCLOTRON
RESONANCE SPECTROSCOPY 297
10.4.1 DILUTE NITRIDE INASI_ X N X 297
10.4.2 DILUTE NITRIDE GAASI_ X N X 301
10.4.3 VALENCE-BAND DISPERSION PROBED BY CR 301
10.4.4 CARRIER DYNAMICS PROBED BY CR 303
REFERENCES 304
11 USING HIGH MAGNETIC FIELDS TO STUDY THE ELECTRONIC PROPERTIES O F
SEMICONDUCTOR MATERIALS AND NANOSTRUCTURES 309
A. PATANE AND L. EAVES 11.1 INTRODUCTION 309
11.2 LORENTZ FORCE AND CLASSICAL HALL EFFECT 310
11.3 LANDAU LEVEL QUANTIZATION 312
11.4 MAGNETORESISTANCE, SHUBNIKOV-DE HAAS AND QUANTUM HALL EFFECTS 314
11.4.1 CLASSICAL POSITIVE MAGNETORESISTANCE 315
11.4.2 SHUBNIKOV-DE HAAS AND QUANTUM HALL EFFECTS 316
11.4.3 MAGNETOPHONON RESONANCE 319
11.4.4 POSITIVE LINEAR MAGNETORESISTANCE 320
11.4.5 NEGATIVE MAGNETORESISTANCE 322
11.5 MAGNETO-TUNNELING SPECTROSCOPY 322
11.5.1 PROBING BAND STRUCTURES 323
11.5.2 PROBING AND MANIPULATING LOW-DIMENSIONAL SYSTEMS ... 325 11.6
CONCLUSION 328
REFERENCES 329
12 PHOTOCONDUCTIVITY AND TRANSIENT SPECTROSCOPY 333
AY§E EROL AND M. ETIN ARIKAN 12.1 INTRODUCTION 333
12.2 PHOTOCONDUCTIVITY 335
12.2.1 PHOTOCONDUCTIVITY: GENERAL CONCEPTS 335
12.2.2 PHOTOCONDUCTIVITY: SPECTRAL RESPONSE 339
12.2.3 PHOTOCONDUCTIVITY DECAY 340
12.3 PHOTOCONDUCTIVITY MEASUREMENT TECHNIQUES 341
12.3.1 STEADY-STATE (DC) PHOTOCONDUCTIVITY 341
12.3.2 MODULATED (AC) PHOTOCONDUCTIVITY 342
12.3.3 PULSED PHOTOCONDUCTIVITY 344
12.4 EXPERIMENTAL SETUPS FOR PHOTOCONDUCTIVITY MEASUREMENTS 344 12.4.1
SPECTRAL PHOTOCONDUCTIVITY: EXPERIMENTAL SETUP 344 12.4.2 TRANSIENT
PHOTOCONDUCTIVITY: EXPERIMENTAL SETUP 347
IMAGE 7
CONTENTS X V
12.5 TRANSIENT SPECTROSCOPY 348
12.5.1 GENERATION-RECOMBINATION RATE 350
12.5.2 PHOTO-INDUCED TRANSIENT SPECTROSCOPY 353
12.5.3 DEEP-LEVEL TRANSIENT SPECTROSCOPY 357
12.5.4 PITS VERSUS DLTS 363
REFERENCES 363
INDEX 367
|
| any_adam_object | 1 |
| author2 | Patanè, Amalia |
| author2_role | edt |
| author2_variant | a p ap |
| author_facet | Patanè, Amalia |
| building | Verbundindex |
| bvnumber | BV040132455 |
| classification_rvk | UP 2800 UP 9000 UQ 1100 |
| ctrlnum | (OCoLC)794220613 (DE-599)BVBBV040132455 |
| dewey-full | 541.377072 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 541 - Physical chemistry |
| dewey-raw | 541.377072 |
| dewey-search | 541.377072 |
| dewey-sort | 3541.377072 |
| dewey-tens | 540 - Chemistry and allied sciences |
| discipline | Chemie / Pharmazie Physik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01798nam a2200445 cb4500</leader><controlfield tag="001">BV040132455</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20120827 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">120514s2012 ad|| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783642233500</subfield><subfield code="9">978-3-642-23350-0</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)794220613</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV040132455</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-11</subfield><subfield code="a">DE-703</subfield><subfield code="a">DE-20</subfield><subfield code="a">DE-19</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">541.377072</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 2800</subfield><subfield code="0">(DE-625)146366:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 9000</subfield><subfield code="0">(DE-625)146451:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UQ 1100</subfield><subfield code="0">(DE-625)146473:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Semiconductor research</subfield><subfield code="b">experimental techniques</subfield><subfield code="c">Amalia Patanè ...(Eds.)</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin [u.a.]</subfield><subfield code="b">Springer</subfield><subfield code="c">2012</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XIX, 372 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Springer series in materials science</subfield><subfield code="v">150</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterphysik</subfield><subfield code="0">(DE-588)4113829-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Physikalische Eigenschaft</subfield><subfield code="0">(DE-588)4134738-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiterphysik</subfield><subfield code="0">(DE-588)4113829-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Physikalische Eigenschaft</subfield><subfield code="0">(DE-588)4134738-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Patanè, Amalia</subfield><subfield code="4">edt</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Online-Ausgabe</subfield><subfield code="z">978-3-642-23351-7</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Springer series in materials science</subfield><subfield code="v">150</subfield><subfield code="w">(DE-604)BV000683335</subfield><subfield code="9">150</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024989584&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-024989584</subfield></datafield></record></collection> |
| id | DE-604.BV040132455 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T00:17:37Z |
| institution | BVB |
| isbn | 9783642233500 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-024989584 |
| oclc_num | 794220613 |
| open_access_boolean | |
| owner | DE-11 DE-703 DE-20 DE-19 DE-BY-UBM DE-83 |
| owner_facet | DE-11 DE-703 DE-20 DE-19 DE-BY-UBM DE-83 |
| physical | XIX, 372 S. Ill., graph. Darst. |
| publishDate | 2012 |
| publishDateSearch | 2012 |
| publishDateSort | 2012 |
| publisher | Springer |
| record_format | marc |
| series | Springer series in materials science |
| series2 | Springer series in materials science |
| spelling | Semiconductor research experimental techniques Amalia Patanè ...(Eds.) Berlin [u.a.] Springer 2012 XIX, 372 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in materials science 150 Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Physikalische Eigenschaft (DE-588)4134738-9 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 s DE-604 Halbleiter (DE-588)4022993-2 s Physikalische Eigenschaft (DE-588)4134738-9 s Patanè, Amalia edt Erscheint auch als Online-Ausgabe 978-3-642-23351-7 Springer series in materials science 150 (DE-604)BV000683335 150 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024989584&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Semiconductor research experimental techniques Springer series in materials science Halbleiterphysik (DE-588)4113829-6 gnd Physikalische Eigenschaft (DE-588)4134738-9 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4113829-6 (DE-588)4134738-9 (DE-588)4022993-2 |
| title | Semiconductor research experimental techniques |
| title_auth | Semiconductor research experimental techniques |
| title_exact_search | Semiconductor research experimental techniques |
| title_full | Semiconductor research experimental techniques Amalia Patanè ...(Eds.) |
| title_fullStr | Semiconductor research experimental techniques Amalia Patanè ...(Eds.) |
| title_full_unstemmed | Semiconductor research experimental techniques Amalia Patanè ...(Eds.) |
| title_short | Semiconductor research |
| title_sort | semiconductor research experimental techniques |
| title_sub | experimental techniques |
| topic | Halbleiterphysik (DE-588)4113829-6 gnd Physikalische Eigenschaft (DE-588)4134738-9 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Halbleiterphysik Physikalische Eigenschaft Halbleiter |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024989584&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV000683335 |
| work_keys_str_mv | AT pataneamalia semiconductorresearchexperimentaltechniques |