Luminescence spectroscopy of semiconductors:
Gespeichert in:
Hauptverfasser: | , |
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Format: | Buch |
Sprache: | English |
Veröffentlicht: |
Oxford
Oxford Univ. Press
2012
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Ausgabe: | 1. publ. |
Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis |
Beschreibung: | Literaturangaben |
Beschreibung: | XIV, 542 S. Ill., zahlr. graph. Darst. 25 cm |
ISBN: | 9780199588336 0199588333 |
Internformat
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100 | 1 | |a Pelant, Ivan |e Verfasser |4 aut | |
245 | 1 | 0 | |a Luminescence spectroscopy of semiconductors |c Ivan Pelant ; Jan Valenta |
250 | |a 1. publ. | ||
264 | 1 | |a Oxford |b Oxford Univ. Press |c 2012 | |
300 | |a XIV, 542 S. |b Ill., zahlr. graph. Darst. |c 25 cm | ||
336 | |b txt |2 rdacontent | ||
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653 | |a Luminescence spectroscopy. | ||
653 | |a Semiconductors--Optical properties. | ||
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Datensatz im Suchindex
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adam_text | Titel: Luminescence spectroscopy of semiconductors
Autor: Pelant, Ivan
Jahr: 2012
Contents
1 Introduction l
References 7
2 Experimental techniques of luminescence
spectroscopy 9
2.1 Emission and excitation spectra 9
2.2 Types of photodetectors 15
2.3 Monochromators and spectrographs 31
2.3.1 Dispersion and resolving power 33
2.3.2 Throughput of monochromators and spectrographs 40
2.4 Signal detection methods in luminescence spectroscopy 44
2.4.1 Phase-synchronous detection 44
2.4.2 Photon counting 48
2.5 Signal-to-noise ratio in a scanning monochromator 53
2.6 Fourier luminescence spectroscopy 57
2.7 Spectral corrections 58
2.8 Influence of slit opening on the shape of emission spectra 63
2.9 Time-resolved luminescence measurements 67
2.9.1 Direct imaging of the luminescence response 68
2.9.2 Phase-shift method 70
2.9.3 Time-correlated photon counting 72
2.9.4 Boxcar Integrator 73
2.9.5 Streak camera 76
2.10 Problems 78
References 80
3 Kinetic description of luminescence processes 82
3.1 Radiative and non-radiative recombination. Luminescence
quantum yield 82
3.2 Monomolecular process 85
3.3 Bimolecular process 87
3.4 Stretched exponential 89
3.5 Multiple processes present simultaneously 91
3.6 Problems 96
References 96
Contents
4 Phonons and their participation in optical
phenomena 98
4.1 Lattice vibrations—phonons 98
4.2 Electron-phonon and exciton-phonon interactions 103
4.3 Lattice vibrations associated with point defects 110
4.4 A localized optical centre in a solid matrix—the
configurational coordinate model 112
4.5 The shape ofabsorption and emission spectra ofa localized centre 116
4.6 Thermal quenching of luminescence 120
4.7 Problems 121
References 122
5 Channels of radiative recombination in
semiconductors 123
5.1 Overview of luminescence processes in crystalline semiconductors 123
5.2 Recombination of free electron-hole pairs 124
5.2.1 Direct bandgap 125
5.2.2 Indirect bandgap 128
5.3 Recombination of a free electron with a neutral acceptor (e-A°) and
of a free hole with a neutral donor (h-D ) 132
5.4 Recombination of donor-acceptor pairs (D°-A°) 135
5.5 Luminescence excited by two-photon absorption 139
5.6 Luminescence from transition metal and rare earth ion impurities 144
5.7 Problems 146
References 147
6 Non-radiative recombination 148
6.1 Transformation of the excitation energy into heat 149
6.1.1 Multiphonon recombination 149
6.1.2 Auger and bimolecular recombination 153
6.2 Creation of lattice defects 157
6.3 Photochemical changes 158
6.4 Problems 159
References 160
7 Luminescence of excitons 161
7.1 Concept of the Wannier exciton 162
7.1.1 Absorption spectrum of the Wannier exciton 165
7.1.2 Direct bandgap: resonant luminescence of free
exciton-polaritons 168
7.1.3 Direct bandgap: luminescence of free excitons with emission of
optical phonons 171
7.1.4 Luminescence of free excitons in indirect-bandgap
semiconductors 177
7.2 Bound excitons 180
Contents xi
7.2.1 Excitons bound to shallow impurities 182
7.2.2 Quantitative luminescence analysis of shallow impurities
in Silicon 190
7.2.3 Excitons bound to isoelectronic impurities 194
7.2.4 Self-trapped excitons 199
7.3 Problems 201
References 202
8 Highly excited semiconductors 205
8.1 Experimental considerations 206
8.2 Excitonic molecule or biexciton 207
8.2.1 Identification of the EM emission line 208
8.2.2 Determination of biexciton parameters 216
8.3 Collisions of free excitons 218
8.4 Electron-hole liquid (EHL) 220
8.4.1 Luminescence determination of EHL parameters 223
8.4.2 Identification of the EHL emission band 226
8.4.3 Coexistence of excitonic molecules with electron-hole
liquid 228
8.5 Electron-hole plasma (EHP) 230
8.5.1 Mott transition 230
8.5.2 Luminescence of EHP 232
8.6 Bose-Einstein condensation of excitons 234
8.6.1 Properties of the Bose-Einstein distribution 234
8.6.2 Luminescence experiment: Bose-Einstein condensation
yes or no? 236
8.7 Problems 239
References 240
9 Luminescence of disordered semiconductors 242
9.1 Densities of states in bands 242
9.2 Temperature dependence of luminescence 244
9.3 Distribution of luminescence lifetimes 248
9.4 Spectral shape of the emission band 250
9.5 Some other properties of luminescence of disordered
semiconductors 255
9.5.1 Correlation effects 255
9.5.2 Non-radiative recombination 256
9.5.3 Luminescence of impurities and defects 258
9.5.4 Luminescence fatigue 260
9.6 Problems 261
References 262
10 Stimulated emission 263
10.1 Spontaneous versus stimulated emission. Optical gain 263
10.2 Optical gain in semiconductors 267
Contents
10.3 Spectral shape of the optical gain 271
10.4 Stimulated emission in an indirect-bandgap
semiconductor 278
10.5 Participation of excitons in stimulated emission 282
10.6 Experimental techniques for measuring the optical
gain 287
10.6.1 Variable stripe length (VSL) technique 287
10.6.2 Pump and probe (P P) method 295
10.7 Problems 299
References 300
11 Electroluminescence 302
11.1 Historical notes 302
11.2 High-field electroluminescence 304
11.2.1 Experimental considerations 304
11.2.2 Mechanisms of high-field electroluminescence 308
11.2.3 Intensity, spectral and temporal characteristics 316
11.3 Injection electroluminescence 321
11.3.1 Electrical properties of a p-n junction 322
11.3.2 Intensity, spectral and temporal characteristics of LEDs 327
11.4 Electroluminescence of a p-n junction biased in the reverse
direction 333
11.5 Problems 336
References 337
12 Electronic structure and luminescence of
low-dimensional semiconductors 339
12.1 Basic types of low-dimensional semiconductors 340
12.1.1 Semiconductor heterostructures 340
12.1.2 Basic types of quantum-well heterostructures 342
12.2 Density of states in low-dimensional semiconductors 344
12.3 Quantum wells (layers)—two-dimensional semiconductors 347
12.3.1 Single quantum well with infinite barriers 347
12.3.2 Quantum well with finite barriers 351
12.3.3 Excitons in a quantum well 353
12.3.4 Optical transitions in a quantum well 355
12.3.5 Luminescence of quantum wells 357
12.4 Quantum wires 359
12.5 Quantum dots—nanocrystals 363
12.5.1 Quantum dot with spherically Symmetrie potential 363
12.5.2 Types of quantum dots aecording to the strength of the quantum
confinement effect 365
12.5.3 Luminescence of quantum dots 368
12.6 Exciton-phonon interaction. Phonon bottleneck 371
12.7 Some special phenomena 374
12.8 Problems 378
References 379
Contents
XIII
13 Effects of high excitation in low-dimensional
structures 381
13.1 Excitonic molecule (biexciton) in a quantum well 382
13.2 Trions in a quantum well 384
13.3 Collisions of free excitons in a quantum well 386
13.4 Electron-hole plasma (EHP) and electron-hole liquid (EHL) in
2D structures 387
13.5 Biexcitons, EHP, and EHL in quantum wires 392
13.6 Effects of high excitation in quantum dots (nanocrystals) 395
13.7 Problems 398
References 399
14 Stimulated emission and lasing in low-dimensional
structures 400
14.1 Stimulated emission in quantum wells 400
14.1.1 Localized excitons 401
14.1.2 Radiative decay of an exciton with emission of an
LO-phonon (X-LO) 404
14.1.3 Stimulated emission in electron-hole plasma (EHP) 405
14.2 Stimulated emission in quantum wires 408
14.3 Stimulated emission in nanocrystals 410
14.3.1 Nanocrystals dispersed in a matrix 410
14.3.2 Heterostructures with ordered quantum dots 416
14.4 Random lasing 418
14.5 Problems 420
References 421
15 Silicon nanophotonics 423
15.1 Silicon nanocrystals 424
15.2 Optical gain in Silicon nanocrystals 426
15.3 Active planar waveguides made of Silicon nanocrystals 428
15.4 Electroluminescence of Silicon nanocrystals 431
15.5 Silicon nanocrystals combined with Er3+ ions 434
15.6 Biological applications of Silicon nanocrystals 437
15.7 Problems 438
References 439
16 Photonic structures 441
16.1 Photonic crystals 441
16.1.1 Spontaneous emission 443
16.1.2 Stimulated emission 446
16.2 Microresonators 447
16.3 Microcavities 449
16.4 Single photon sources 451
Contents
16.5 Problems 453
References 454
17 Spectroscopy of single semiconductor
nanocrystals 455
17.1 Basic principles 456
17.2 Experimental techniques 457
17.2.1 Wide-field micro-spectroscopy 458
17.2.2 Scanning techniques 460
17.3 Preparation of samples 465
17.3.1 Electron-and ion-beam lithography 465
17.3.2 Colloidal dispersions 466
17.4 Experimental Observation of luminescence from individual
nanocrystals 467
17.4.1 Hidden fine structure of luminescence spectra 467
17.4.2 Changes in spectra: jumps, shifts, blinking 469
17.4.3 Stark effect 470
17.4.4 Luminescence polarization 472
17.4.5 Luminescence intermittency—blinking 47S
17.5 Nanocrystals as sources of non-classical photon flux 485
17.5.1 Measuring photon statistics 485
17.5.2 Experimental manifestation of non-classical light emitted by a
Single nanocrystal 487
17.6 Problems 490
References 491
Appendices 493
A Convolution 493
B Emission spectrum of free excitons including phonon broadening 495
C Luminescence of an excitonic molecule 497
D Kinetic model of exciton condensation 502
E Bose-Einstein condensation 503
F Emission band due to strong electron-phonon interaction 505
G Fitting the optical gain spectral shape in the model of k-relaxation 507
H Reabsorption of luminescence in semiconductors 511
I Oscillator strength 513
J Fitting with a double exponential (Kocka s summation) 514
K Absolute quantum yield of luminescent materials 515
L Basic description of statistics of light from classical and
non-classical sources 521
M Behaviour of multi-component spectral mixtures: the isostilbic
point 526
Subject index 530
Material index 538
|
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id | DE-604.BV039933690 |
illustrated | Illustrated |
indexdate | 2024-07-10T00:14:28Z |
institution | BVB |
isbn | 9780199588336 0199588333 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-024791895 |
oclc_num | 785835407 |
open_access_boolean | |
owner | DE-11 DE-19 DE-BY-UBM DE-526 DE-83 DE-20 DE-703 |
owner_facet | DE-11 DE-19 DE-BY-UBM DE-526 DE-83 DE-20 DE-703 |
physical | XIV, 542 S. Ill., zahlr. graph. Darst. 25 cm |
publishDate | 2012 |
publishDateSearch | 2012 |
publishDateSort | 2012 |
publisher | Oxford Univ. Press |
record_format | marc |
spelling | Pelant, Ivan Verfasser aut Luminescence spectroscopy of semiconductors Ivan Pelant ; Jan Valenta 1. publ. Oxford Oxford Univ. Press 2012 XIV, 542 S. Ill., zahlr. graph. Darst. 25 cm txt rdacontent n rdamedia nc rdacarrier Literaturangaben Lumineszenzspektroskopie (DE-588)4168304-3 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Luminescence spectroscopy. Semiconductors--Optical properties. Halbleiter (DE-588)4022993-2 s Lumineszenzspektroskopie (DE-588)4168304-3 s DE-604 Valenta, Jan Verfasser aut HBZ Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024791895&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
spellingShingle | Pelant, Ivan Valenta, Jan Luminescence spectroscopy of semiconductors Lumineszenzspektroskopie (DE-588)4168304-3 gnd Halbleiter (DE-588)4022993-2 gnd |
subject_GND | (DE-588)4168304-3 (DE-588)4022993-2 |
title | Luminescence spectroscopy of semiconductors |
title_auth | Luminescence spectroscopy of semiconductors |
title_exact_search | Luminescence spectroscopy of semiconductors |
title_full | Luminescence spectroscopy of semiconductors Ivan Pelant ; Jan Valenta |
title_fullStr | Luminescence spectroscopy of semiconductors Ivan Pelant ; Jan Valenta |
title_full_unstemmed | Luminescence spectroscopy of semiconductors Ivan Pelant ; Jan Valenta |
title_short | Luminescence spectroscopy of semiconductors |
title_sort | luminescence spectroscopy of semiconductors |
topic | Lumineszenzspektroskopie (DE-588)4168304-3 gnd Halbleiter (DE-588)4022993-2 gnd |
topic_facet | Lumineszenzspektroskopie Halbleiter |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024791895&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
work_keys_str_mv | AT pelantivan luminescencespectroscopyofsemiconductors AT valentajan luminescencespectroscopyofsemiconductors |